This paper is mainly dedicated to understand the phenomena governing the formation of two-dimensional electron gas (2DEG) confined in the quantum well which hold the role of the channel in the high electron density transistors (HEMT) based on AlGaN / GaN heterojunction. The theory takes into account: the crystal structure, the spontaneous and piezoelectric polarization concept, the formation mechanism of two-dimensional electron gas at the AlGaN / GaN interface, the approximate resolution of the Poisson and Schrödinger equations to determine the density of Two-dimensional electron gas after the analytical formula of the current-voltage characteristic is established. Our study is also concerned with the dependence of the twodimensional electron gas density on the following technological parameters: Aluminum molare fraction, AlGaN layer thickness and AlGaN layer doping, In order to control the influence of these parameters on the device performance. Finally, the current-voltage characteristic which reflects the variation of the drain-source current as a function of the modulation of the gate voltage has been discussed.
Research Inventy : International Journal of Engineering and Science is publis...researchinventy
This document summarizes research on characterizing the electrical properties of AlGaN/GaN modulation-doped field-effect transistors (MODFETs). Key findings include:
- A threshold voltage of -3.87V, maximum saturation current of 122.748 mA, and transconductance values were achieved.
- Dependence of two-dimensional electron gas density at the interface on Al mole fraction and AlGaN barrier layer thickness was presented.
- A novel method for studying AlGaN/GaN interface properties by solving the Schrodinger and Poisson equations self-consistently using finite difference methods was developed. This allows calculating electron distributions, energy band structures, and other characteristics of
An analytical model for the current voltage characteristics of GaN-capped AlG...IJECEIAES
We present an analytical model for the I-V characteristics of AlGaN/GaN and AlInN/GaN high electron mobility transistors (HEMT). Our study focuses on the influence of a GaN capping layer, and of thermal and self-heating effects. Spontaneous and piezoelectric polarizations at Al(Ga,In)N/GaN and GaN/Al(Ga,In)N interfaces have been incorporated in the analysis. Our model permits to fit several published data. Our results indicate that the GaN cap layer reduces the sheet density of the twodimensional electron gas (2DEG), leading to a decrease of the drain current, and that n + -doped GaN cap layer provides a higher sheet density than undoped one. In n + GaN/AlInN/GaN HEMTs, the sheet carrier concentration is higher than in n + GaN/AlGaN/GaN HEMTs, due to the higher spontaneous polarization charge and conduction band discontinuity at the substrate/barrier layer interface.
ANALYSIS OF SMALL-SIGNAL PARAMETERS OF 2-D MODFET WITH POLARIZATION EFFECTS F...VLSICS Design
An improved analytical two dimensional (2-D) model for AlGaN/GaN modulation doped field effect
transistor (MODFET) has been developed. The model is based on the solution of 2-D Poisson’s equation.
The model includes the spontaneous and piezoelectric polarization effects. The effects of field dependent
mobility, velocity saturation and parasitic resistances are included in the current voltage characteristics of
the developed two dimensional electron gas (2-DEG) model. The small-signal microwave parameters have
been evaluated to determine the output characteristics, device transconductance and cut-off frequency for
50 nm gate length. The peak transconductance of 165mS/mm and a cut-off frequency of 120 GHz have been
obtained. The results so obtained are in close agreement with experimental data, thereby proving the
validity of the model.
IRJET- Impact of Buffer Mole Fraction on Algan/ Gan HEMT with Different G...IRJET Journal
This document summarizes research on the impact of buffer mole fraction on AlGaN/GaN HEMTs. Increasing the Al mole fraction in the AlGaN buffer results in higher polarization charges at the interface, which leads to increased 2DEG density and higher drain current. Simulation results show that at different gate voltages, an Al mole fraction of 0.30 produces the highest drain and source currents. The increased electron confinement and reduced short channel effects with higher mole fractions improve device output resistance and performance.
Effect of mesh grid structure in reducing hot carrier effect of nmos device s...ijcsa
This paper presents the critical effect of mesh grid that should be considered during process and device
simulation using modern TCAD tools in order to develop and optimize their accurate electrical
characteristics. Here, the computational modelling process of developing the NMOS device structure is
performed in Athena and Atlas. The effect of Mesh grid on net doping profile, n++, and LDD sheet
resistance that could link to unwanted “Hot Carrier Effect” were investigated by varying the device grid
resolution in both directions. It is found that y-grid give more profound effect in the doping concentration,
the junction depth formation and the value of threshold voltage during simulation. Optimized mesh grid is
obtained and tested for more accurate and faster simulation. Process parameter (such as oxide thicknesses
and Sheet resistance) as well as Device Parameter (such as linear gain “beta” and SPICE level 3 mobility
roll-off parameter “ Theta”) are extracted and investigated for further different applications.
This document summarizes a research paper that analyzes the movement of metallic particles in gas insulated busduct systems due to electric fields. It presents analytical, finite difference, and finite element methods to model the electric fields and calculate particle trajectories. Simulation results show that aluminum and copper particle movement increases with higher voltages. The maximum radial movement is 10.75mm at 220kV and 35.66mm at 600kV using different field calculation methods.
Double layer energy storage in graphene a studytshankar20134
This document summarizes research on using graphene for energy storage in electrochemical double layer capacitors (EDLCs). Graphene has potential as an EDLC electrode material due to its high surface area and electrical conductivity. Studies have found specific capacitances of graphene electrodes ranging from tens of F/g to over 1000 F/g depending on preparation methods and electrolytes. However, graphene sheets tend to restack reducing surface area availability. Methods to prevent restacking like adding metal oxides or curving graphene sheets have improved capacitance. Research is optimizing graphene properties and composites to enhance energy and power densities for applications requiring high power such as filtering alternating current.
Optimization of electric energy density in epoxy aluminium nanocompositeiaemedu
This document summarizes research on optimizing the electric energy density of epoxy-aluminum nanocomposites. It models the nanocomposite as a three-phase material and evaluates how aluminum particle size and filler loading affect permittivity, breakdown strength, and energy density. Numerical results show permittivity increases drastically near the percolation threshold. As filler volume increases, breakdown strength decreases but energy density notably increases. The optimal filler size and concentration for maximum energy density are evaluated, with inter-particle distance controlling breakdown strength significantly impacting energy storage capacity.
Research Inventy : International Journal of Engineering and Science is publis...researchinventy
This document summarizes research on characterizing the electrical properties of AlGaN/GaN modulation-doped field-effect transistors (MODFETs). Key findings include:
- A threshold voltage of -3.87V, maximum saturation current of 122.748 mA, and transconductance values were achieved.
- Dependence of two-dimensional electron gas density at the interface on Al mole fraction and AlGaN barrier layer thickness was presented.
- A novel method for studying AlGaN/GaN interface properties by solving the Schrodinger and Poisson equations self-consistently using finite difference methods was developed. This allows calculating electron distributions, energy band structures, and other characteristics of
An analytical model for the current voltage characteristics of GaN-capped AlG...IJECEIAES
We present an analytical model for the I-V characteristics of AlGaN/GaN and AlInN/GaN high electron mobility transistors (HEMT). Our study focuses on the influence of a GaN capping layer, and of thermal and self-heating effects. Spontaneous and piezoelectric polarizations at Al(Ga,In)N/GaN and GaN/Al(Ga,In)N interfaces have been incorporated in the analysis. Our model permits to fit several published data. Our results indicate that the GaN cap layer reduces the sheet density of the twodimensional electron gas (2DEG), leading to a decrease of the drain current, and that n + -doped GaN cap layer provides a higher sheet density than undoped one. In n + GaN/AlInN/GaN HEMTs, the sheet carrier concentration is higher than in n + GaN/AlGaN/GaN HEMTs, due to the higher spontaneous polarization charge and conduction band discontinuity at the substrate/barrier layer interface.
ANALYSIS OF SMALL-SIGNAL PARAMETERS OF 2-D MODFET WITH POLARIZATION EFFECTS F...VLSICS Design
An improved analytical two dimensional (2-D) model for AlGaN/GaN modulation doped field effect
transistor (MODFET) has been developed. The model is based on the solution of 2-D Poisson’s equation.
The model includes the spontaneous and piezoelectric polarization effects. The effects of field dependent
mobility, velocity saturation and parasitic resistances are included in the current voltage characteristics of
the developed two dimensional electron gas (2-DEG) model. The small-signal microwave parameters have
been evaluated to determine the output characteristics, device transconductance and cut-off frequency for
50 nm gate length. The peak transconductance of 165mS/mm and a cut-off frequency of 120 GHz have been
obtained. The results so obtained are in close agreement with experimental data, thereby proving the
validity of the model.
IRJET- Impact of Buffer Mole Fraction on Algan/ Gan HEMT with Different G...IRJET Journal
This document summarizes research on the impact of buffer mole fraction on AlGaN/GaN HEMTs. Increasing the Al mole fraction in the AlGaN buffer results in higher polarization charges at the interface, which leads to increased 2DEG density and higher drain current. Simulation results show that at different gate voltages, an Al mole fraction of 0.30 produces the highest drain and source currents. The increased electron confinement and reduced short channel effects with higher mole fractions improve device output resistance and performance.
Effect of mesh grid structure in reducing hot carrier effect of nmos device s...ijcsa
This paper presents the critical effect of mesh grid that should be considered during process and device
simulation using modern TCAD tools in order to develop and optimize their accurate electrical
characteristics. Here, the computational modelling process of developing the NMOS device structure is
performed in Athena and Atlas. The effect of Mesh grid on net doping profile, n++, and LDD sheet
resistance that could link to unwanted “Hot Carrier Effect” were investigated by varying the device grid
resolution in both directions. It is found that y-grid give more profound effect in the doping concentration,
the junction depth formation and the value of threshold voltage during simulation. Optimized mesh grid is
obtained and tested for more accurate and faster simulation. Process parameter (such as oxide thicknesses
and Sheet resistance) as well as Device Parameter (such as linear gain “beta” and SPICE level 3 mobility
roll-off parameter “ Theta”) are extracted and investigated for further different applications.
This document summarizes a research paper that analyzes the movement of metallic particles in gas insulated busduct systems due to electric fields. It presents analytical, finite difference, and finite element methods to model the electric fields and calculate particle trajectories. Simulation results show that aluminum and copper particle movement increases with higher voltages. The maximum radial movement is 10.75mm at 220kV and 35.66mm at 600kV using different field calculation methods.
Double layer energy storage in graphene a studytshankar20134
This document summarizes research on using graphene for energy storage in electrochemical double layer capacitors (EDLCs). Graphene has potential as an EDLC electrode material due to its high surface area and electrical conductivity. Studies have found specific capacitances of graphene electrodes ranging from tens of F/g to over 1000 F/g depending on preparation methods and electrolytes. However, graphene sheets tend to restack reducing surface area availability. Methods to prevent restacking like adding metal oxides or curving graphene sheets have improved capacitance. Research is optimizing graphene properties and composites to enhance energy and power densities for applications requiring high power such as filtering alternating current.
Optimization of electric energy density in epoxy aluminium nanocompositeiaemedu
This document summarizes research on optimizing the electric energy density of epoxy-aluminum nanocomposites. It models the nanocomposite as a three-phase material and evaluates how aluminum particle size and filler loading affect permittivity, breakdown strength, and energy density. Numerical results show permittivity increases drastically near the percolation threshold. As filler volume increases, breakdown strength decreases but energy density notably increases. The optimal filler size and concentration for maximum energy density are evaluated, with inter-particle distance controlling breakdown strength significantly impacting energy storage capacity.
Optimization of electric energy density in epoxy aluminiumiaemedu
This document discusses optimizing the electric energy density of epoxy-aluminum nanocomposites for use as dielectric materials. It presents a three-phase model to characterize the nanocomposite's dielectric properties as a function of aluminum particle size and volume fraction. Numerical results show that permittivity increases drastically near the percolation threshold. While breakdown strength decreases with higher volume fractions, the overall energy density is significantly higher than pure epoxy. Maximum energy density occurs at an optimal particle size and concentration balancing high permittivity and maintaining breakdown strength. Careful control of microstructure is important to avoid defects and achieve expected energy density gains.
Some Aspects of Stress Distribution and Effect of Voids Having Different Gase...IOSR Journals
1) The document analyzes the stress distribution and effect of voids with different gases in MV power cables through finite element modeling. It studies the electric field and temperature distribution within cable insulation containing voids.
2) Cylindrical voids are found to have higher electric stress than spherical or elliptical voids. Among gases, oxygen consumption during partial discharge causes greater temperature rise and faster breakdown than nitrogen.
3) The analysis examines factors like void shape, position, and size that influence stress distribution and partial discharge inception voltage. Nearer and larger voids have lower inception voltages. Oxygen consumption leads to uniform erosion and higher temperatures, making its effect greater than other gases.
Design and Simulation of a Fractal Micro-TransformerIJERA Editor
This document summarizes the design and simulation of a fractal micro-transformer. The researchers designed an air-core fractal micro-transformer using finite element modeling software. Simulation results showed improved performance parameters compared to macro transformers, including higher voltage gain. Electric displacement and magnetic energy density within the micro-transformer were determined to be 2 x 10-11 C/m2 and 100 J/m3 respectively. Losses within the air-core design were minimal at 3 W/m3. The micro-transformer was concluded to be suitable for integration in MEMS and VLSI applications due to its small size, high impedance, and isolation capabilities.
Structural, Electronic and Gamma Shielding Properties of BxAl1-xAsIJMERJOURNAL
ABSTRACT: The structural and electronic properties of BxAl1-xAs ternary alloys in the zincblende structure were systematically investigated by using the first principles calculations. The local density approximation was used for exchanged and correlation interaction. The calculated band gap bowing parameter was discovered to be mightily composition dependent of the Boron concentration. Additionally, we have calculated some gamma shielding parameters of BxAl1-xAs ternary alloys. Primarily, the values of mass attenuation coefficients (μρ) were calculated using WinXCom computer program and then these parameters were utilized to calculate the values of electron density (Nel) and effective atomic number (Zeff) in the wide energy range (1 keV - 100 GeV).
This document summarizes research investigating graphene/cerium oxide nanoparticles as an electrode material for supercapacitors. Scanning electron microscopy images showed the layered structure of graphene with cerium oxide nanoparticles dispersed across the surface. Electrochemical testing found the electrode achieved a maximum specific capacitance of 11.09 F g−1 in 3 M NaCl electrolyte. Charge/discharge cycling showed good reversibility and 37% increase in capacitance after 500 cycles. The graphene/cerium oxide composite performed better than cerium oxide alone due to graphene's conductivity and the formation of an electrical double layer at the electrode interface.
Welcome to International Journal of Engineering Research and Development (IJERD)IJERD Editor
The document summarizes research on the polarizability of donors in spherical gallium arsenide (GaAs) quantum dots (QDs) under an applied electric field. The author uses an effective mass approximation and variational method to calculate:
1) The binding energy of donors at different positions within the QD and as a function of QD size.
2) The polarizability of donors in the QD under an applied electric field. The polarizability is found to be several orders of magnitude higher than hydrogen atoms.
3) The results agree with previous theoretical studies. The binding energy increases as QD size decreases.
First principles study on structural and electronic properties of re ag (re= ...Alexander Decker
This article presents a first principles study of the structural, electronic, and mechanical properties of REAg (RE = Y, La, Pr, Er) intermetallic compounds using density functional theory. The results show that these compounds crystallize in the B2 (CsCl-type) structure and are metallic. Lattice constants, bulk moduli, and densities of states are calculated and compared to experimental values where available, showing good agreement. Electronic band structures indicate hybridization between RE d/f states and Ag s/p states near the Fermi level. Partial densities of states of the d orbitals suggest ErAg and YAg are more ductile than LaAg and PrAg due to delocalized Ag d states. Overall
This document summarizes a study on the movement of metallic particles in gas insulated busduct systems. Computer simulations were used to model the movement of aluminum and copper particles in uncoated and coated 3-phase busduct enclosures. The simulations considered forces like electrostatic force, gravity, and drag. Results showed aluminum particles moved further than copper in uncoated systems. Coated enclosures significantly reduced particle movement compared to uncoated. Particle movement increased with higher voltages but coating prevented bridging between phases.
Electronic bands structure and gap in mid-infrared detector InAs/GaSb type II...IJERA Editor
We present here theoretical study of the electronic bands structure E (d1) of InAs (d1=25 Å)/GaSb (d2=25 Å) type
II superlattice at 4.2 K performed in the envelope function formalism. We study the effect of d1 and the offset ,
between heavy holes bands edges of InAs and GaSb, on the band gap Eg (), at the center of the first Brillouin
zone, and the semiconductor-to-semimetal transition. Eg (, T) decreases from 288.7 meV at 4.2 K to 230 meV
at 300K. In the investigated temperature range, the cut-off wavelength 4.3 m ≤ c ≤ 5.4 m situates this sample
as mid-wavelength infrared detector (MWIR). Our results are in good agreement with the experimental data
realized by C. Cervera et al.
The document summarizes key information about the CdGa2S4 semiconductor. It belongs to the ordered vacancy compound family, which contains direct bandgap materials less than 4 eV that can be used in optoelectronic devices. CdGa2S4 has a defect chalcopyrite structure at ambient conditions and undergoes a phase transition to a disordered rocksalt structure above 18.8 GPa. First-principles density functional theory calculations were performed to investigate the structural stability and electronic properties of both phases under varying pressures. The results show that the defect chalcopyrite phase is more stable at lower pressures and becomes metallic above the transition pressure where the structures change.
Performance Analysis of Single Quantum Dots and Couple Quantum Dots at Interm...IOSR Journals
This document analyzes the performance of single quantum dots versus coupled quantum dots in intermediate band solar cells through simulations. It finds that increasing the distance between quantum dots reduces the overlap between their wave functions, decreasing the intermediate bandwidth. A narrower intermediate band is inversely related to cell efficiency. Specifically, simulations show that decreasing the barrier width between quantum dots from 6nm to 2nm while keeping their width at 4nm increases the intermediate bandwidth from a very thin level to 90meV, improving efficiency.
The document reports on a study of the AC and DC conductivity of three glycine family nonlinear optical (NLO) single crystals: Trisglycine Zinc Chloride (TGZC), Triglycine Acetate (TGAc), and Glycine Lithium Sulphate (GLS). The AC conductivity was measured from 50 Hz to 5 MHz and increased with temperature for all crystals. The activation energies calculated from the AC conductivity were 0.035 eV for TGZC, 0.075 eV for TGAc, and 0.10 eV for GLS. The DC conductivity also increased with temperature from 313 K to 423 K, and the activation energies calculated were 0.050 eV for TGZC, 0.060 eV
1) The paper discusses insulation coordination challenges for Gas Insulated Switchgear (GIS) substations connected to overhead lines via underground cables. Short cable lengths complicate insulation practices due to fast front transients from lightning and switching.
2) A literature review found that GIS failure rates increase with voltage level, with 61% of failures from nominal voltage and 39% from overvoltage. Only one failure was reported due to lightning.
3) The paper reports on modeling work to examine factors like cable length, tower footing resistance, and surge arrester placement that influence transient overvoltages and the effectiveness of mitigation methods. Preliminary results suggest surge arresters and low tower footing resistance are effective at controlling overvoltages.
Journal Molecular Crystals and Liquid Crystals (1994), Vol. 256, pp. 555-561.
S. A. Jeglinski, M. E. Hollier, J. F. Gold, and Z. V. Vardeny
University of Utah, Physics Department, Salt Lake City, UT 84112
Y. Ding and T. Barton
Iowa State University, Chemistry Department, Ames, IA 50011
Abstract
A diode has been fabricated with poly(phenylene acetylene) [PPA] as the electroluminescent polymer. The device exhibited an unusual symmetric (positive and negative bias) I-V characteristic and electroluminescent output. These experimental results are discussed in terms of tunneling of electrons and holes via localized states.
Temperature dependent electrical response of orange dye complex basedIAEME Publication
The document summarizes research on temperature-dependent electrical properties of Orange-Dye complex based Schottky diodes. Schottky diodes were fabricated from Orange-Dye and Vinyl-Ehtynyl-Trimehyl-Piperiodole complex deposited via spin coating. Current-voltage measurements showed the diodes followed the space charge limited current model. Analysis of this data determined how parameters like mobility, trap density, and threshold voltage varied with temperature, improving at higher temperatures. The study provided insight into charge transport within the organic semiconductor complex.
Deterioration of short channel effectsijistjournal
This document presents an analytical model for surface potential and electric field in a novel dual halo triple material surrounding gate (DH-TMSG) MOSFET structure. The DH-TMSG incorporates symmetrical dual halo regions near the source and drain, and a triple material gate. The analytical model uses a parabolic approximation method and boundary conditions to derive expressions for surface potential. Simulation results show that the DH-TMSG design significantly reduces short channel effects by producing peaks and steps in the surface potential and electric field profiles through the channel. This improves carrier transport and device performance compared to other multi-gate structures.
This document summarizes the theoretical characterization of coplanar waveguides using conformal mapping. It describes the structure of coplanar waveguides and presents an analysis using conformal mapping to transform the geometry into a parallel plate capacitor. Formulas are derived for the characteristic impedance and effective dielectric constant. The analysis is applied to coplanar waveguides with different dielectric materials and substrate thicknesses. The results show that characteristic impedance decreases with increasing normalized strip width and dielectric permittivity.
Numerical investigation of the performance of AlGaN/GaN/BGaN double-gate dou...IJECEIAES
In this work, we examine the direct-current (DC) behavior and the radio frequency (RF) performance of both single-gate simple-channel (SGSC), single-gate double-channel (SGDC) and double-gate double-channel (DGDC) AlGaN/GaN/BGaN high electron mobility transistor (HEMT) with BGaN back-barriers consist of 250 nm gate length. Using technology computer aided design (TCAD) Silvaco, our isothermal simulation results reveal that the proposed structure of double-gate double-channel HEMT with BGaN back-barriers (DGDCBB HEMT) increases electron concentration and consequently the saturation drain current, breakdown voltage, the transconductance. On the other hand, decreases the gate leakage current compared to a conventional HEMT and to a double-channel HEMT back-barriers. Furthermore, the proposed double-gate double-channel backbarrier HEMT device shows good cutoff frequency (94 GHz) and a maximum oscillation frequency (170 GHz). These results suggest that double-gate double channel HEMT back-barriers could be useful for high frequency and high-power microwave applications.
This document provides a review of High Electron Mobility Transistors (HEMTs). It discusses the motivation for developing HEMTs due to limitations of silicon MOSFETs and III-V MESFETs. The basic working principles of HEMTs are presented using the AlGaAs/GaAs material system, including the formation of a two-dimensional electron gas (2DEG) at the heterojunction interface which provides high electron mobility. Early developments of HEMTs in the 1980s by researchers at institutions including Fujitsu, Bell Labs, and the University of Illinois are summarized. More recent developments involving GaN HEMTs and MOSHEMT structures are also reviewed.
This document summarizes the results of a Monte Carlo simulation comparing electron transport properties in GaSb and GaAs semiconductors at high electric fields. The simulation includes nonparabolic band structures, acoustic and polar optical phonon scattering, and ionized impurity scattering. It finds that GaAs has a higher peak electron drift velocity of around 2.2x105 m/s compared to 1.2x105 m/s for GaSb. Both materials show velocity saturation at high fields due to increased intervalley scattering. Temperature is also found to decrease peak velocity and increase the critical field for velocity overshoot.
International Journal of Engineering Research and Applications (IJERA) is an open access online peer reviewed international journal that publishes research and review articles in the fields of Computer Science, Neural Networks, Electrical Engineering, Software Engineering, Information Technology, Mechanical Engineering, Chemical Engineering, Plastic Engineering, Food Technology, Textile Engineering, Nano Technology & science, Power Electronics, Electronics & Communication Engineering, Computational mathematics, Image processing, Civil Engineering, Structural Engineering, Environmental Engineering, VLSI Testing & Low Power VLSI Design etc.
Optimization of electric energy density in epoxy aluminiumiaemedu
This document discusses optimizing the electric energy density of epoxy-aluminum nanocomposites for use as dielectric materials. It presents a three-phase model to characterize the nanocomposite's dielectric properties as a function of aluminum particle size and volume fraction. Numerical results show that permittivity increases drastically near the percolation threshold. While breakdown strength decreases with higher volume fractions, the overall energy density is significantly higher than pure epoxy. Maximum energy density occurs at an optimal particle size and concentration balancing high permittivity and maintaining breakdown strength. Careful control of microstructure is important to avoid defects and achieve expected energy density gains.
Some Aspects of Stress Distribution and Effect of Voids Having Different Gase...IOSR Journals
1) The document analyzes the stress distribution and effect of voids with different gases in MV power cables through finite element modeling. It studies the electric field and temperature distribution within cable insulation containing voids.
2) Cylindrical voids are found to have higher electric stress than spherical or elliptical voids. Among gases, oxygen consumption during partial discharge causes greater temperature rise and faster breakdown than nitrogen.
3) The analysis examines factors like void shape, position, and size that influence stress distribution and partial discharge inception voltage. Nearer and larger voids have lower inception voltages. Oxygen consumption leads to uniform erosion and higher temperatures, making its effect greater than other gases.
Design and Simulation of a Fractal Micro-TransformerIJERA Editor
This document summarizes the design and simulation of a fractal micro-transformer. The researchers designed an air-core fractal micro-transformer using finite element modeling software. Simulation results showed improved performance parameters compared to macro transformers, including higher voltage gain. Electric displacement and magnetic energy density within the micro-transformer were determined to be 2 x 10-11 C/m2 and 100 J/m3 respectively. Losses within the air-core design were minimal at 3 W/m3. The micro-transformer was concluded to be suitable for integration in MEMS and VLSI applications due to its small size, high impedance, and isolation capabilities.
Structural, Electronic and Gamma Shielding Properties of BxAl1-xAsIJMERJOURNAL
ABSTRACT: The structural and electronic properties of BxAl1-xAs ternary alloys in the zincblende structure were systematically investigated by using the first principles calculations. The local density approximation was used for exchanged and correlation interaction. The calculated band gap bowing parameter was discovered to be mightily composition dependent of the Boron concentration. Additionally, we have calculated some gamma shielding parameters of BxAl1-xAs ternary alloys. Primarily, the values of mass attenuation coefficients (μρ) were calculated using WinXCom computer program and then these parameters were utilized to calculate the values of electron density (Nel) and effective atomic number (Zeff) in the wide energy range (1 keV - 100 GeV).
This document summarizes research investigating graphene/cerium oxide nanoparticles as an electrode material for supercapacitors. Scanning electron microscopy images showed the layered structure of graphene with cerium oxide nanoparticles dispersed across the surface. Electrochemical testing found the electrode achieved a maximum specific capacitance of 11.09 F g−1 in 3 M NaCl electrolyte. Charge/discharge cycling showed good reversibility and 37% increase in capacitance after 500 cycles. The graphene/cerium oxide composite performed better than cerium oxide alone due to graphene's conductivity and the formation of an electrical double layer at the electrode interface.
Welcome to International Journal of Engineering Research and Development (IJERD)IJERD Editor
The document summarizes research on the polarizability of donors in spherical gallium arsenide (GaAs) quantum dots (QDs) under an applied electric field. The author uses an effective mass approximation and variational method to calculate:
1) The binding energy of donors at different positions within the QD and as a function of QD size.
2) The polarizability of donors in the QD under an applied electric field. The polarizability is found to be several orders of magnitude higher than hydrogen atoms.
3) The results agree with previous theoretical studies. The binding energy increases as QD size decreases.
First principles study on structural and electronic properties of re ag (re= ...Alexander Decker
This article presents a first principles study of the structural, electronic, and mechanical properties of REAg (RE = Y, La, Pr, Er) intermetallic compounds using density functional theory. The results show that these compounds crystallize in the B2 (CsCl-type) structure and are metallic. Lattice constants, bulk moduli, and densities of states are calculated and compared to experimental values where available, showing good agreement. Electronic band structures indicate hybridization between RE d/f states and Ag s/p states near the Fermi level. Partial densities of states of the d orbitals suggest ErAg and YAg are more ductile than LaAg and PrAg due to delocalized Ag d states. Overall
This document summarizes a study on the movement of metallic particles in gas insulated busduct systems. Computer simulations were used to model the movement of aluminum and copper particles in uncoated and coated 3-phase busduct enclosures. The simulations considered forces like electrostatic force, gravity, and drag. Results showed aluminum particles moved further than copper in uncoated systems. Coated enclosures significantly reduced particle movement compared to uncoated. Particle movement increased with higher voltages but coating prevented bridging between phases.
Electronic bands structure and gap in mid-infrared detector InAs/GaSb type II...IJERA Editor
We present here theoretical study of the electronic bands structure E (d1) of InAs (d1=25 Å)/GaSb (d2=25 Å) type
II superlattice at 4.2 K performed in the envelope function formalism. We study the effect of d1 and the offset ,
between heavy holes bands edges of InAs and GaSb, on the band gap Eg (), at the center of the first Brillouin
zone, and the semiconductor-to-semimetal transition. Eg (, T) decreases from 288.7 meV at 4.2 K to 230 meV
at 300K. In the investigated temperature range, the cut-off wavelength 4.3 m ≤ c ≤ 5.4 m situates this sample
as mid-wavelength infrared detector (MWIR). Our results are in good agreement with the experimental data
realized by C. Cervera et al.
The document summarizes key information about the CdGa2S4 semiconductor. It belongs to the ordered vacancy compound family, which contains direct bandgap materials less than 4 eV that can be used in optoelectronic devices. CdGa2S4 has a defect chalcopyrite structure at ambient conditions and undergoes a phase transition to a disordered rocksalt structure above 18.8 GPa. First-principles density functional theory calculations were performed to investigate the structural stability and electronic properties of both phases under varying pressures. The results show that the defect chalcopyrite phase is more stable at lower pressures and becomes metallic above the transition pressure where the structures change.
Performance Analysis of Single Quantum Dots and Couple Quantum Dots at Interm...IOSR Journals
This document analyzes the performance of single quantum dots versus coupled quantum dots in intermediate band solar cells through simulations. It finds that increasing the distance between quantum dots reduces the overlap between their wave functions, decreasing the intermediate bandwidth. A narrower intermediate band is inversely related to cell efficiency. Specifically, simulations show that decreasing the barrier width between quantum dots from 6nm to 2nm while keeping their width at 4nm increases the intermediate bandwidth from a very thin level to 90meV, improving efficiency.
The document reports on a study of the AC and DC conductivity of three glycine family nonlinear optical (NLO) single crystals: Trisglycine Zinc Chloride (TGZC), Triglycine Acetate (TGAc), and Glycine Lithium Sulphate (GLS). The AC conductivity was measured from 50 Hz to 5 MHz and increased with temperature for all crystals. The activation energies calculated from the AC conductivity were 0.035 eV for TGZC, 0.075 eV for TGAc, and 0.10 eV for GLS. The DC conductivity also increased with temperature from 313 K to 423 K, and the activation energies calculated were 0.050 eV for TGZC, 0.060 eV
1) The paper discusses insulation coordination challenges for Gas Insulated Switchgear (GIS) substations connected to overhead lines via underground cables. Short cable lengths complicate insulation practices due to fast front transients from lightning and switching.
2) A literature review found that GIS failure rates increase with voltage level, with 61% of failures from nominal voltage and 39% from overvoltage. Only one failure was reported due to lightning.
3) The paper reports on modeling work to examine factors like cable length, tower footing resistance, and surge arrester placement that influence transient overvoltages and the effectiveness of mitigation methods. Preliminary results suggest surge arresters and low tower footing resistance are effective at controlling overvoltages.
Journal Molecular Crystals and Liquid Crystals (1994), Vol. 256, pp. 555-561.
S. A. Jeglinski, M. E. Hollier, J. F. Gold, and Z. V. Vardeny
University of Utah, Physics Department, Salt Lake City, UT 84112
Y. Ding and T. Barton
Iowa State University, Chemistry Department, Ames, IA 50011
Abstract
A diode has been fabricated with poly(phenylene acetylene) [PPA] as the electroluminescent polymer. The device exhibited an unusual symmetric (positive and negative bias) I-V characteristic and electroluminescent output. These experimental results are discussed in terms of tunneling of electrons and holes via localized states.
Temperature dependent electrical response of orange dye complex basedIAEME Publication
The document summarizes research on temperature-dependent electrical properties of Orange-Dye complex based Schottky diodes. Schottky diodes were fabricated from Orange-Dye and Vinyl-Ehtynyl-Trimehyl-Piperiodole complex deposited via spin coating. Current-voltage measurements showed the diodes followed the space charge limited current model. Analysis of this data determined how parameters like mobility, trap density, and threshold voltage varied with temperature, improving at higher temperatures. The study provided insight into charge transport within the organic semiconductor complex.
Deterioration of short channel effectsijistjournal
This document presents an analytical model for surface potential and electric field in a novel dual halo triple material surrounding gate (DH-TMSG) MOSFET structure. The DH-TMSG incorporates symmetrical dual halo regions near the source and drain, and a triple material gate. The analytical model uses a parabolic approximation method and boundary conditions to derive expressions for surface potential. Simulation results show that the DH-TMSG design significantly reduces short channel effects by producing peaks and steps in the surface potential and electric field profiles through the channel. This improves carrier transport and device performance compared to other multi-gate structures.
This document summarizes the theoretical characterization of coplanar waveguides using conformal mapping. It describes the structure of coplanar waveguides and presents an analysis using conformal mapping to transform the geometry into a parallel plate capacitor. Formulas are derived for the characteristic impedance and effective dielectric constant. The analysis is applied to coplanar waveguides with different dielectric materials and substrate thicknesses. The results show that characteristic impedance decreases with increasing normalized strip width and dielectric permittivity.
Numerical investigation of the performance of AlGaN/GaN/BGaN double-gate dou...IJECEIAES
In this work, we examine the direct-current (DC) behavior and the radio frequency (RF) performance of both single-gate simple-channel (SGSC), single-gate double-channel (SGDC) and double-gate double-channel (DGDC) AlGaN/GaN/BGaN high electron mobility transistor (HEMT) with BGaN back-barriers consist of 250 nm gate length. Using technology computer aided design (TCAD) Silvaco, our isothermal simulation results reveal that the proposed structure of double-gate double-channel HEMT with BGaN back-barriers (DGDCBB HEMT) increases electron concentration and consequently the saturation drain current, breakdown voltage, the transconductance. On the other hand, decreases the gate leakage current compared to a conventional HEMT and to a double-channel HEMT back-barriers. Furthermore, the proposed double-gate double-channel backbarrier HEMT device shows good cutoff frequency (94 GHz) and a maximum oscillation frequency (170 GHz). These results suggest that double-gate double channel HEMT back-barriers could be useful for high frequency and high-power microwave applications.
This document provides a review of High Electron Mobility Transistors (HEMTs). It discusses the motivation for developing HEMTs due to limitations of silicon MOSFETs and III-V MESFETs. The basic working principles of HEMTs are presented using the AlGaAs/GaAs material system, including the formation of a two-dimensional electron gas (2DEG) at the heterojunction interface which provides high electron mobility. Early developments of HEMTs in the 1980s by researchers at institutions including Fujitsu, Bell Labs, and the University of Illinois are summarized. More recent developments involving GaN HEMTs and MOSHEMT structures are also reviewed.
This document summarizes the results of a Monte Carlo simulation comparing electron transport properties in GaSb and GaAs semiconductors at high electric fields. The simulation includes nonparabolic band structures, acoustic and polar optical phonon scattering, and ionized impurity scattering. It finds that GaAs has a higher peak electron drift velocity of around 2.2x105 m/s compared to 1.2x105 m/s for GaSb. Both materials show velocity saturation at high fields due to increased intervalley scattering. Temperature is also found to decrease peak velocity and increase the critical field for velocity overshoot.
International Journal of Engineering Research and Applications (IJERA) is an open access online peer reviewed international journal that publishes research and review articles in the fields of Computer Science, Neural Networks, Electrical Engineering, Software Engineering, Information Technology, Mechanical Engineering, Chemical Engineering, Plastic Engineering, Food Technology, Textile Engineering, Nano Technology & science, Power Electronics, Electronics & Communication Engineering, Computational mathematics, Image processing, Civil Engineering, Structural Engineering, Environmental Engineering, VLSI Testing & Low Power VLSI Design etc.
The document discusses the history and operation of high electron mobility transistors (HEMTs). Key points include:
1) HEMTs were first developed in 1979 and commercialized in the 1980s-1990s, using materials like AlGaAs/GaAs and AlGaN/GaN.
2) HEMTs form a 2D electron gas at the heterojunction between two semiconductor materials with different bandgap energies, allowing for high electron mobility and low noise.
3) The AlGaN/GaN HEMT has advantages like higher speed, frequency, and power efficiency compared to other transistors, making it useful for applications like wireless communications and power switching.
10.1016-j.mssp.2015.01.037-Electrochemical investigation of graphene_nanoporo...Mahdi Robat Sarpoushi
This study investigated the effect of mixing graphene nanosheets and nanoporous carbon black on the surface morphology and electrochemical performance of electrodes prepared for supercapacitors. Electrodes containing 80% nanoporous carbon black, 10% graphene nanosheets, and 10% PTFE binder showed the highest specific capacitance of 10.22 F/g. The addition of nanoporous carbon black increased the proportion of outer charge stored on the electrode relative to the total charge stored, indicating higher current response and voltage reversal at the end potentials. Scanning electron microscopy images showed that adding nanoporous carbon black particles arranged the graphene nanosheets in different directions, increasing the specific surface area and changing diffusion characteristics to improve capacitance and reversibility
ANALYSIS OF SMALL-SIGNAL PARAMETERS OF 2-D MODFET WITH POLARIZATION EFFECTS F...VLSICS Design
An improved analytical two dimensional (2-D) model for AlGaN/GaN modulation doped field effect transistor (MODFET) has been developed. The model is based on the solution of 2-D Poisson’s equation. The model includes the spontaneous and piezoelectric polarization effects. The effects of field dependent mobility, velocity saturation and parasitic resistances are included in the current voltage characteristics of the developed two dimensional electron gas (2-DEG) model. The small-signal microwave parameters have been evaluated to determine the output characteristics, device transconductance and cut-off frequency for 50 nm gate length. The peak transconductance of 165mS/mm and a cut-off frequency of 120 GHz have been obtained. The results so obtained are in close agreement with experimental data, thereby proving the validity of the model.
International Journal of Engineering Research and Applications (IJERA) is an open access online peer reviewed international journal that publishes research and review articles in the fields of Computer Science, Neural Networks, Electrical Engineering, Software Engineering, Information Technology, Mechanical Engineering, Chemical Engineering, Plastic Engineering, Food Technology, Textile Engineering, Nano Technology & science, Power Electronics, Electronics & Communication Engineering, Computational mathematics, Image processing, Civil Engineering, Structural Engineering, Environmental Engineering, VLSI Testing & Low Power VLSI Design etc.
Characterization and modeling the effect of temperature on power HBTs InGaP/G...IJECEIAES
The variation and stability of HBT’s parameters at different temperatures are important for utilizing these devices in high-power integrated circuits. The temperature dependence of the DC current gain of bipolar transistors, as a key device parameter, has been extensively investigated. A major issue of the power HBT’s is that the current gain is decreased with junction temperature due to self-heating effect.Hence, how to stabilize the DC current gain and RF performances is important issue to develop the power HBTs. This work describes the DC and high-frequency temperature dependence of InGaP/GaAs HBT’s. The substrate temperature (T) was varied from 25 to 150°C. The static and dynamic performances of the HBT are degraded at high temperature, due to the reduced of carrier mobility with increasing temperature. The current gain (β) decreases at high temperatures; from 140 to 127 at 25 to 150°C, while the decreases in the peak F t and F max are observed from about 110 GHz to 68 GHz and from 165 GHz to 53 GHz respectively in the temperature range of 25 to 150°C.
International Journal of Computational Engineering Research (IJCER) is dedicated to protecting personal information and will make every reasonable effort to handle collected information appropriately. All information collected, as well as related requests, will be handled as carefully and efficiently as possible in accordance with IJCER standards for integrity and objectivity.
The document describes a simulation study comparing the RF and analog performance of different AlGaN/GaN MOSHEMT device structures. Single gate MOSHEMTs using SiO2, Al2O3, and HfO2 dielectrics were designed and simulated. Double gate and dielectric pocket double gate MOSHEMT structures were also simulated to improve performance. Simulation results showed the HfO2 dielectric pocket double gate MOSHEMT achieved the best performance with high drain current and transconductance, as well as high cutoff frequency over 1.95 THz, indicating suitability for analog and millimeter-wave applications.
Al gan gan field effect transistors with c-doped gan buffer layer as an elect...Kal Tar
1. The authors grew AlGaN/GaN field effect transistor structures on carbon-doped GaN buffer layers using molecular beam epitaxy.
2. These structures demonstrated excellent device characteristics, including a high product of sheet carrier density and mobility (nsl) up to 2 × 1016 V−1s−1 and an on/off current ratio of 107.
3. Inter-device isolation measurements showed isolation currents in the low picoampere range, indicating the carbon-doped GaN buffer layer effectively suppressed parallel conduction paths.
Simulation of AlGaN/Si and InN/Si ELECTRIC –DEVICESijrap
In this work, efficient solar-blind metal-semiconductor photodetectors grown on Si (111) by
molecular beam epitaxy are reported. Growth details are described,the comparison enters the
properties electric of InN/Si and AlGaN/Si photodectors with 0.2 μm of AlGaN and InN layers.
Modeling and simulation were performed by using ATLAS-TCAD simulator. Energy band
diagram, doping profile, conduction current density,I-V caracteristic , internal potential and
electric field were performed.
Simulation of AlGaN/Si and InN/Si ELECTRIC –DEVICESijrap
In this work, efficient solar-blind metal-semiconductor photodetectors grown on Si (111) by
molecular beam epitaxy are reported. Growth details are described,the comparison enters the
properties electric of InN/Si and AlGaN/Si photodectors with 0.2 µm of AlGaN and InN layers.
Modeling and simulation were performed by using ATLAS-TCAD simulator. Energy band
diagram, doping profile, conduction current density,I-V caracteristic , internal potential and
electric field were performed
1.Guo2018_Effect of tensile strain on the band structure and carrier transpor...NguynHongLinh14
The document discusses the effect of tensile strain on the electronic properties of germanium monosulphide (GeS) monolayer through first-principles calculations. It finds that:
1) The band gap of GeS monolayer can be tuned from 1.96 to 2.72 eV through uniaxial and biaxial tensile strain up to 10%.
2) Applying tensile strain of 3.5% and 9% in the zigzag direction triggers transitions from indirect to direct band gap and then direct to indirect band gap, but this does not occur for strain in the armchair or biaxial directions.
3) The carrier mobility of GeS mon
Numerical simulation model of multijunction solar cellAlexander Decker
This document presents a simulation model of multi-junction solar cells. The model simulates the performance characteristics of dual-junction solar cells with InGaP/GaAs and triple-junction solar cells with InGaP/GaAs/Ge. The model accounts for the solar cells and tunnel junctions that connect the cells. Simulation results show the multi-junction cells have higher open-circuit voltages than individual cells due to current matching, though overall current is reduced. The model agrees with experimental data and can be used to analyze effects of material properties on cell performance.
Simulation Of Algan/Si And Inn/Si Electric - Devicesijrap
In this work, efficient solar-blind metal-semiconductor photodetectors grown on Si (111) by
molecular beam epitaxy are reported. Growth details are described,the comparison enters the
properties electric of InN/Si and AlGaN/Si photodectors with 0.2 µm of AlGaN and InN layers.
Modeling and simulation were performed by using ATLAS-TCAD simulator. Energy band
diagram, doping profile, conduction current density,I-V caracteristic , internal potential and
electric field were performed.
Design and performance analysis of front and back Pi 6 nm gate with high K d...IJECEIAES
Advanced high electron mobility transistor (HEMT) with dual front gate, back gate with silicon nitride/aluminum oxide (Si3N4/Al2O3) as passivation layer, has been designed. The dependency on DC characteristics and radio frequency characteristics due to GaN cap layers, multi gate (FG and BG), and high K dielectric material is established. Further compared single gate (SG) passivated HEMT, double gate (DG) passivated HEMT, double gate triple (DGT) tooth passivated HEMT, high K dielectric front Pi gate (FG) and back Pi gate (BG) HEMT. It is observed that there is an increased drain current (Ion) of 5.92 (A/mm), low leakage current (Ioff) 5.54E-13 (A) of transconductance (Gm) of 3.71 (S/mm), drain conductance (Gd) of 1.769 (S/mm), Cutoff frequency (fT) of 743 GHz maximum oscillation frequency (Fmax) 765 GHz, minimum threshold voltage (𝑉𝑡ℎ) of -4.5 V, on resistance (Ron) of 0.40 (Ohms) at 𝑉𝑔𝑠 = 0 V. These outstanding characteristics and transistor structure of proposed HEMT and materials involved to apply for upcoming generation high-speed GHz frequency applications.
Comprehensive identification of sensitive and stable ISFET sensing layer high...IJECEIAES
The ISFET sensing membrane is in direct contact with the electrolyte solution, determining the starting sensitivity of these devices. A SiO2 gate dielectric shows a low response sensitivity and poor stability. This paper proposes a comprehensive identification of different high-k materials which can be used for this purpose, rather than SiO2. The Gouy-Chapman and Gouy-Chapman-Stern models were combined with the Site-binding model, based on surface potential sensitivity, to achieve the work objectives. Five materials, namely Al2O3, Ta2O5, Hfo2, Zro2 and SN2O3, which are commonly considered for micro-electronic applications, were compared. This study has identified that Ta2O5 have a high surface potential response at around 59mV/pH, and also exhibits high stability in different electrolyte concentrations. The models used have been validated with real experimental data, which achieved excellent agreement. The insights gained from this study may be of assistance to determine the suitability of different materials before progressing to expensive real ISFET fabrication.
Numerical simulation of electromagnetic radiation using high-order discontinu...IJECEIAES
In this paper, we propose the simulation of 2-dimensional electromagnetic wave radiation using high-order discontinuous Galerkin time domain method to solve Maxwell's equations. The domains are discretized into unstructured straight-sided triangle elements that allow enhanced flexibility when dealing with complex geometries. The electric and magnetic fields are expanded into a high-order polynomial spectral approximation over each triangle element. The field conservation between the elements is enforced using central difference flux calculation at element interfaces. Perfectly matched layer (PML) boundary condition is used to absorb the waves that leave the domain. The comparison of numerical calculations is performed by the graphical displays and numerical data of radiation phenomenon and presented particularly with the results of the FDTD method. Finally, our simulations show that the proposed method can handle simulation of electromagnetic radiation with complex geometries easily.
Similar to Analytic Estimation of Two-Dimensional Electron Gas Density and Current-Voltage Characteristic in AlGaN/GaN HEMT’s (20)
Redefining brain tumor segmentation: a cutting-edge convolutional neural netw...IJECEIAES
Medical image analysis has witnessed significant advancements with deep learning techniques. In the domain of brain tumor segmentation, the ability to
precisely delineate tumor boundaries from magnetic resonance imaging (MRI)
scans holds profound implications for diagnosis. This study presents an ensemble convolutional neural network (CNN) with transfer learning, integrating
the state-of-the-art Deeplabv3+ architecture with the ResNet18 backbone. The
model is rigorously trained and evaluated, exhibiting remarkable performance
metrics, including an impressive global accuracy of 99.286%, a high-class accuracy of 82.191%, a mean intersection over union (IoU) of 79.900%, a weighted
IoU of 98.620%, and a Boundary F1 (BF) score of 83.303%. Notably, a detailed comparative analysis with existing methods showcases the superiority of
our proposed model. These findings underscore the model’s competence in precise brain tumor localization, underscoring its potential to revolutionize medical
image analysis and enhance healthcare outcomes. This research paves the way
for future exploration and optimization of advanced CNN models in medical
imaging, emphasizing addressing false positives and resource efficiency.
Embedded machine learning-based road conditions and driving behavior monitoringIJECEIAES
Car accident rates have increased in recent years, resulting in losses in human lives, properties, and other financial costs. An embedded machine learning-based system is developed to address this critical issue. The system can monitor road conditions, detect driving patterns, and identify aggressive driving behaviors. The system is based on neural networks trained on a comprehensive dataset of driving events, driving styles, and road conditions. The system effectively detects potential risks and helps mitigate the frequency and impact of accidents. The primary goal is to ensure the safety of drivers and vehicles. Collecting data involved gathering information on three key road events: normal street and normal drive, speed bumps, circular yellow speed bumps, and three aggressive driving actions: sudden start, sudden stop, and sudden entry. The gathered data is processed and analyzed using a machine learning system designed for limited power and memory devices. The developed system resulted in 91.9% accuracy, 93.6% precision, and 92% recall. The achieved inference time on an Arduino Nano 33 BLE Sense with a 32-bit CPU running at 64 MHz is 34 ms and requires 2.6 kB peak RAM and 139.9 kB program flash memory, making it suitable for resource-constrained embedded systems.
Advanced control scheme of doubly fed induction generator for wind turbine us...IJECEIAES
This paper describes a speed control device for generating electrical energy on an electricity network based on the doubly fed induction generator (DFIG) used for wind power conversion systems. At first, a double-fed induction generator model was constructed. A control law is formulated to govern the flow of energy between the stator of a DFIG and the energy network using three types of controllers: proportional integral (PI), sliding mode controller (SMC) and second order sliding mode controller (SOSMC). Their different results in terms of power reference tracking, reaction to unexpected speed fluctuations, sensitivity to perturbations, and resilience against machine parameter alterations are compared. MATLAB/Simulink was used to conduct the simulations for the preceding study. Multiple simulations have shown very satisfying results, and the investigations demonstrate the efficacy and power-enhancing capabilities of the suggested control system.
Neural network optimizer of proportional-integral-differential controller par...IJECEIAES
Wide application of proportional-integral-differential (PID)-regulator in industry requires constant improvement of methods of its parameters adjustment. The paper deals with the issues of optimization of PID-regulator parameters with the use of neural network technology methods. A methodology for choosing the architecture (structure) of neural network optimizer is proposed, which consists in determining the number of layers, the number of neurons in each layer, as well as the form and type of activation function. Algorithms of neural network training based on the application of the method of minimizing the mismatch between the regulated value and the target value are developed. The method of back propagation of gradients is proposed to select the optimal training rate of neurons of the neural network. The neural network optimizer, which is a superstructure of the linear PID controller, allows increasing the regulation accuracy from 0.23 to 0.09, thus reducing the power consumption from 65% to 53%. The results of the conducted experiments allow us to conclude that the created neural superstructure may well become a prototype of an automatic voltage regulator (AVR)-type industrial controller for tuning the parameters of the PID controller.
An improved modulation technique suitable for a three level flying capacitor ...IJECEIAES
This research paper introduces an innovative modulation technique for controlling a 3-level flying capacitor multilevel inverter (FCMLI), aiming to streamline the modulation process in contrast to conventional methods. The proposed
simplified modulation technique paves the way for more straightforward and
efficient control of multilevel inverters, enabling their widespread adoption and
integration into modern power electronic systems. Through the amalgamation of
sinusoidal pulse width modulation (SPWM) with a high-frequency square wave
pulse, this controlling technique attains energy equilibrium across the coupling
capacitor. The modulation scheme incorporates a simplified switching pattern
and a decreased count of voltage references, thereby simplifying the control
algorithm.
A review on features and methods of potential fishing zoneIJECEIAES
This review focuses on the importance of identifying potential fishing zones in seawater for sustainable fishing practices. It explores features like sea surface temperature (SST) and sea surface height (SSH), along with classification methods such as classifiers. The features like SST, SSH, and different classifiers used to classify the data, have been figured out in this review study. This study underscores the importance of examining potential fishing zones using advanced analytical techniques. It thoroughly explores the methodologies employed by researchers, covering both past and current approaches. The examination centers on data characteristics and the application of classification algorithms for classification of potential fishing zones. Furthermore, the prediction of potential fishing zones relies significantly on the effectiveness of classification algorithms. Previous research has assessed the performance of models like support vector machines, naïve Bayes, and artificial neural networks (ANN). In the previous result, the results of support vector machine (SVM) were 97.6% more accurate than naive Bayes's 94.2% to classify test data for fisheries classification. By considering the recent works in this area, several recommendations for future works are presented to further improve the performance of the potential fishing zone models, which is important to the fisheries community.
Electrical signal interference minimization using appropriate core material f...IJECEIAES
As demand for smaller, quicker, and more powerful devices rises, Moore's law is strictly followed. The industry has worked hard to make little devices that boost productivity. The goal is to optimize device density. Scientists are reducing connection delays to improve circuit performance. This helped them understand three-dimensional integrated circuit (3D IC) concepts, which stack active devices and create vertical connections to diminish latency and lower interconnects. Electrical involvement is a big worry with 3D integrates circuits. Researchers have developed and tested through silicon via (TSV) and substrates to decrease electrical wave involvement. This study illustrates a novel noise coupling reduction method using several electrical involvement models. A 22% drop in electrical involvement from wave-carrying to victim TSVs introduces this new paradigm and improves system performance even at higher THz frequencies.
Electric vehicle and photovoltaic advanced roles in enhancing the financial p...IJECEIAES
Climate change's impact on the planet forced the United Nations and governments to promote green energies and electric transportation. The deployments of photovoltaic (PV) and electric vehicle (EV) systems gained stronger momentum due to their numerous advantages over fossil fuel types. The advantages go beyond sustainability to reach financial support and stability. The work in this paper introduces the hybrid system between PV and EV to support industrial and commercial plants. This paper covers the theoretical framework of the proposed hybrid system including the required equation to complete the cost analysis when PV and EV are present. In addition, the proposed design diagram which sets the priorities and requirements of the system is presented. The proposed approach allows setup to advance their power stability, especially during power outages. The presented information supports researchers and plant owners to complete the necessary analysis while promoting the deployment of clean energy. The result of a case study that represents a dairy milk farmer supports the theoretical works and highlights its advanced benefits to existing plants. The short return on investment of the proposed approach supports the paper's novelty approach for the sustainable electrical system. In addition, the proposed system allows for an isolated power setup without the need for a transmission line which enhances the safety of the electrical network
Bibliometric analysis highlighting the role of women in addressing climate ch...IJECEIAES
Fossil fuel consumption increased quickly, contributing to climate change
that is evident in unusual flooding and draughts, and global warming. Over
the past ten years, women's involvement in society has grown dramatically,
and they succeeded in playing a noticeable role in reducing climate change.
A bibliometric analysis of data from the last ten years has been carried out to
examine the role of women in addressing the climate change. The analysis's
findings discussed the relevant to the sustainable development goals (SDGs),
particularly SDG 7 and SDG 13. The results considered contributions made
by women in the various sectors while taking geographic dispersion into
account. The bibliometric analysis delves into topics including women's
leadership in environmental groups, their involvement in policymaking, their
contributions to sustainable development projects, and the influence of
gender diversity on attempts to mitigate climate change. This study's results
highlight how women have influenced policies and actions related to climate
change, point out areas of research deficiency and recommendations on how
to increase role of the women in addressing the climate change and
achieving sustainability. To achieve more successful results, this initiative
aims to highlight the significance of gender equality and encourage
inclusivity in climate change decision-making processes.
Voltage and frequency control of microgrid in presence of micro-turbine inter...IJECEIAES
The active and reactive load changes have a significant impact on voltage
and frequency. In this paper, in order to stabilize the microgrid (MG) against
load variations in islanding mode, the active and reactive power of all
distributed generators (DGs), including energy storage (battery), diesel
generator, and micro-turbine, are controlled. The micro-turbine generator is
connected to MG through a three-phase to three-phase matrix converter, and
the droop control method is applied for controlling the voltage and
frequency of MG. In addition, a method is introduced for voltage and
frequency control of micro-turbines in the transition state from gridconnected mode to islanding mode. A novel switching strategy of the matrix
converter is used for converting the high-frequency output voltage of the
micro-turbine to the grid-side frequency of the utility system. Moreover,
using the switching strategy, the low-order harmonics in the output current
and voltage are not produced, and consequently, the size of the output filter
would be reduced. In fact, the suggested control strategy is load-independent
and has no frequency conversion restrictions. The proposed approach for
voltage and frequency regulation demonstrates exceptional performance and
favorable response across various load alteration scenarios. The suggested
strategy is examined in several scenarios in the MG test systems, and the
simulation results are addressed.
Enhancing battery system identification: nonlinear autoregressive modeling fo...IJECEIAES
Precisely characterizing Li-ion batteries is essential for optimizing their
performance, enhancing safety, and prolonging their lifespan across various
applications, such as electric vehicles and renewable energy systems. This
article introduces an innovative nonlinear methodology for system
identification of a Li-ion battery, employing a nonlinear autoregressive with
exogenous inputs (NARX) model. The proposed approach integrates the
benefits of nonlinear modeling with the adaptability of the NARX structure,
facilitating a more comprehensive representation of the intricate
electrochemical processes within the battery. Experimental data collected
from a Li-ion battery operating under diverse scenarios are employed to
validate the effectiveness of the proposed methodology. The identified
NARX model exhibits superior accuracy in predicting the battery's behavior
compared to traditional linear models. This study underscores the
importance of accounting for nonlinearities in battery modeling, providing
insights into the intricate relationships between state-of-charge, voltage, and
current under dynamic conditions.
Smart grid deployment: from a bibliometric analysis to a surveyIJECEIAES
Smart grids are one of the last decades' innovations in electrical energy.
They bring relevant advantages compared to the traditional grid and
significant interest from the research community. Assessing the field's
evolution is essential to propose guidelines for facing new and future smart
grid challenges. In addition, knowing the main technologies involved in the
deployment of smart grids (SGs) is important to highlight possible
shortcomings that can be mitigated by developing new tools. This paper
contributes to the research trends mentioned above by focusing on two
objectives. First, a bibliometric analysis is presented to give an overview of
the current research level about smart grid deployment. Second, a survey of
the main technological approaches used for smart grid implementation and
their contributions are highlighted. To that effect, we searched the Web of
Science (WoS), and the Scopus databases. We obtained 5,663 documents
from WoS and 7,215 from Scopus on smart grid implementation or
deployment. With the extraction limitation in the Scopus database, 5,872 of
the 7,215 documents were extracted using a multi-step process. These two
datasets have been analyzed using a bibliometric tool called bibliometrix.
The main outputs are presented with some recommendations for future
research.
Use of analytical hierarchy process for selecting and prioritizing islanding ...IJECEIAES
One of the problems that are associated to power systems is islanding
condition, which must be rapidly and properly detected to prevent any
negative consequences on the system's protection, stability, and security.
This paper offers a thorough overview of several islanding detection
strategies, which are divided into two categories: classic approaches,
including local and remote approaches, and modern techniques, including
techniques based on signal processing and computational intelligence.
Additionally, each approach is compared and assessed based on several
factors, including implementation costs, non-detected zones, declining
power quality, and response times using the analytical hierarchy process
(AHP). The multi-criteria decision-making analysis shows that the overall
weight of passive methods (24.7%), active methods (7.8%), hybrid methods
(5.6%), remote methods (14.5%), signal processing-based methods (26.6%),
and computational intelligent-based methods (20.8%) based on the
comparison of all criteria together. Thus, it can be seen from the total weight
that hybrid approaches are the least suitable to be chosen, while signal
processing-based methods are the most appropriate islanding detection
method to be selected and implemented in power system with respect to the
aforementioned factors. Using Expert Choice software, the proposed
hierarchy model is studied and examined.
Enhancing of single-stage grid-connected photovoltaic system using fuzzy logi...IJECEIAES
The power generated by photovoltaic (PV) systems is influenced by
environmental factors. This variability hampers the control and utilization of
solar cells' peak output. In this study, a single-stage grid-connected PV
system is designed to enhance power quality. Our approach employs fuzzy
logic in the direct power control (DPC) of a three-phase voltage source
inverter (VSI), enabling seamless integration of the PV connected to the
grid. Additionally, a fuzzy logic-based maximum power point tracking
(MPPT) controller is adopted, which outperforms traditional methods like
incremental conductance (INC) in enhancing solar cell efficiency and
minimizing the response time. Moreover, the inverter's real-time active and
reactive power is directly managed to achieve a unity power factor (UPF).
The system's performance is assessed through MATLAB/Simulink
implementation, showing marked improvement over conventional methods,
particularly in steady-state and varying weather conditions. For solar
irradiances of 500 and 1,000 W/m2
, the results show that the proposed
method reduces the total harmonic distortion (THD) of the injected current
to the grid by approximately 46% and 38% compared to conventional
methods, respectively. Furthermore, we compare the simulation results with
IEEE standards to evaluate the system's grid compatibility.
Enhancing photovoltaic system maximum power point tracking with fuzzy logic-b...IJECEIAES
Photovoltaic systems have emerged as a promising energy resource that
caters to the future needs of society, owing to their renewable, inexhaustible,
and cost-free nature. The power output of these systems relies on solar cell
radiation and temperature. In order to mitigate the dependence on
atmospheric conditions and enhance power tracking, a conventional
approach has been improved by integrating various methods. To optimize
the generation of electricity from solar systems, the maximum power point
tracking (MPPT) technique is employed. To overcome limitations such as
steady-state voltage oscillations and improve transient response, two
traditional MPPT methods, namely fuzzy logic controller (FLC) and perturb
and observe (P&O), have been modified. This research paper aims to
simulate and validate the step size of the proposed modified P&O and FLC
techniques within the MPPT algorithm using MATLAB/Simulink for
efficient power tracking in photovoltaic systems.
Adaptive synchronous sliding control for a robot manipulator based on neural ...IJECEIAES
Robot manipulators have become important equipment in production lines, medical fields, and transportation. Improving the quality of trajectory tracking for
robot hands is always an attractive topic in the research community. This is a
challenging problem because robot manipulators are complex nonlinear systems
and are often subject to fluctuations in loads and external disturbances. This
article proposes an adaptive synchronous sliding control scheme to improve trajectory tracking performance for a robot manipulator. The proposed controller
ensures that the positions of the joints track the desired trajectory, synchronize
the errors, and significantly reduces chattering. First, the synchronous tracking
errors and synchronous sliding surfaces are presented. Second, the synchronous
tracking error dynamics are determined. Third, a robust adaptive control law is
designed,the unknown components of the model are estimated online by the neural network, and the parameters of the switching elements are selected by fuzzy
logic. The built algorithm ensures that the tracking and approximation errors
are ultimately uniformly bounded (UUB). Finally, the effectiveness of the constructed algorithm is demonstrated through simulation and experimental results.
Simulation and experimental results show that the proposed controller is effective with small synchronous tracking errors, and the chattering phenomenon is
significantly reduced.
Remote field-programmable gate array laboratory for signal acquisition and de...IJECEIAES
A remote laboratory utilizing field-programmable gate array (FPGA) technologies enhances students’ learning experience anywhere and anytime in embedded system design. Existing remote laboratories prioritize hardware access and visual feedback for observing board behavior after programming, neglecting comprehensive debugging tools to resolve errors that require internal signal acquisition. This paper proposes a novel remote embeddedsystem design approach targeting FPGA technologies that are fully interactive via a web-based platform. Our solution provides FPGA board access and debugging capabilities beyond the visual feedback provided by existing remote laboratories. We implemented a lab module that allows users to seamlessly incorporate into their FPGA design. The module minimizes hardware resource utilization while enabling the acquisition of a large number of data samples from the signal during the experiments by adaptively compressing the signal prior to data transmission. The results demonstrate an average compression ratio of 2.90 across three benchmark signals, indicating efficient signal acquisition and effective debugging and analysis. This method allows users to acquire more data samples than conventional methods. The proposed lab allows students to remotely test and debug their designs, bridging the gap between theory and practice in embedded system design.
Detecting and resolving feature envy through automated machine learning and m...IJECEIAES
Efficiently identifying and resolving code smells enhances software project quality. This paper presents a novel solution, utilizing automated machine learning (AutoML) techniques, to detect code smells and apply move method refactoring. By evaluating code metrics before and after refactoring, we assessed its impact on coupling, complexity, and cohesion. Key contributions of this research include a unique dataset for code smell classification and the development of models using AutoGluon for optimal performance. Furthermore, the study identifies the top 20 influential features in classifying feature envy, a well-known code smell, stemming from excessive reliance on external classes. We also explored how move method refactoring addresses feature envy, revealing reduced coupling and complexity, and improved cohesion, ultimately enhancing code quality. In summary, this research offers an empirical, data-driven approach, integrating AutoML and move method refactoring to optimize software project quality. Insights gained shed light on the benefits of refactoring on code quality and the significance of specific features in detecting feature envy. Future research can expand to explore additional refactoring techniques and a broader range of code metrics, advancing software engineering practices and standards.
Smart monitoring technique for solar cell systems using internet of things ba...IJECEIAES
Rapidly and remotely monitoring and receiving the solar cell systems status parameters, solar irradiance, temperature, and humidity, are critical issues in enhancement their efficiency. Hence, in the present article an improved smart prototype of internet of things (IoT) technique based on embedded system through NodeMCU ESP8266 (ESP-12E) was carried out experimentally. Three different regions at Egypt; Luxor, Cairo, and El-Beheira cities were chosen to study their solar irradiance profile, temperature, and humidity by the proposed IoT system. The monitoring data of solar irradiance, temperature, and humidity were live visualized directly by Ubidots through hypertext transfer protocol (HTTP) protocol. The measured solar power radiation in Luxor, Cairo, and El-Beheira ranged between 216-1000, 245-958, and 187-692 W/m 2 respectively during the solar day. The accuracy and rapidity of obtaining monitoring results using the proposed IoT system made it a strong candidate for application in monitoring solar cell systems. On the other hand, the obtained solar power radiation results of the three considered regions strongly candidate Luxor and Cairo as suitable places to build up a solar cells system station rather than El-Beheira.
An efficient security framework for intrusion detection and prevention in int...IJECEIAES
Over the past few years, the internet of things (IoT) has advanced to connect billions of smart devices to improve quality of life. However, anomalies or malicious intrusions pose several security loopholes, leading to performance degradation and threat to data security in IoT operations. Thereby, IoT security systems must keep an eye on and restrict unwanted events from occurring in the IoT network. Recently, various technical solutions based on machine learning (ML) models have been derived towards identifying and restricting unwanted events in IoT. However, most ML-based approaches are prone to miss-classification due to inappropriate feature selection. Additionally, most ML approaches applied to intrusion detection and prevention consider supervised learning, which requires a large amount of labeled data to be trained. Consequently, such complex datasets are impossible to source in a large network like IoT. To address this problem, this proposed study introduces an efficient learning mechanism to strengthen the IoT security aspects. The proposed algorithm incorporates supervised and unsupervised approaches to improve the learning models for intrusion detection and mitigation. Compared with the related works, the experimental outcome shows that the model performs well in a benchmark dataset. It accomplishes an improved detection accuracy of approximately 99.21%.
Determination of Equivalent Circuit parameters and performance characteristic...pvpriya2
Includes the testing of induction motor to draw the circle diagram of induction motor with step wise procedure and calculation for the same. Also explains the working and application of Induction generator
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In the world with high technology and fast
forward mindset recruiters are walking/showing interest
towards E-Recruitment. Present most of the HRs of
many companies are choosing E-Recruitment as the best
choice for recruitment. E-Recruitment is being done
through many online platforms like Linkedin, Naukri,
Instagram , Facebook etc. Now with high technology E-
Recruitment has gone through next level by using
Artificial Intelligence too.
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Generative AI Use cases applications solutions and implementation.pdfmahaffeycheryld
Generative AI solutions encompass a range of capabilities from content creation to complex problem-solving across industries. Implementing generative AI involves identifying specific business needs, developing tailored AI models using techniques like GANs and VAEs, and integrating these models into existing workflows. Data quality and continuous model refinement are crucial for effective implementation. Businesses must also consider ethical implications and ensure transparency in AI decision-making. Generative AI's implementation aims to enhance efficiency, creativity, and innovation by leveraging autonomous generation and sophisticated learning algorithms to meet diverse business challenges.
https://www.leewayhertz.com/generative-ai-use-cases-and-applications/
Road construction is not as easy as it seems to be, it includes various steps and it starts with its designing and
structure including the traffic volume consideration. Then base layer is done by bulldozers and levelers and after
base surface coating has to be done. For giving road a smooth surface with flexibility, Asphalt concrete is used.
Asphalt requires an aggregate sub base material layer, and then a base layer to be put into first place. Asphalt road
construction is formulated to support the heavy traffic load and climatic conditions. It is 100% recyclable and
saving non renewable natural resources.
With the advancement of technology, Asphalt technology gives assurance about the good drainage system and with
skid resistance it can be used where safety is necessary such as outsidethe schools.
The largest use of Asphalt is for making asphalt concrete for road surfaces. It is widely used in airports around the
world due to the sturdiness and ability to be repaired quickly, it is widely used for runways dedicated to aircraft
landing and taking off. Asphalt is normally stored and transported at 150’C or 300’F temperature
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Open Channel Flow: This topic focuses on fluid flow with a free surface, such as in rivers, canals, and drainage ditches. Key concepts include the classification of flow types (steady vs. unsteady, uniform vs. non-uniform), hydraulic radius, flow resistance, Manning's equation, critical flow conditions, and energy and momentum principles. It also covers flow measurement techniques, gradually varied flow analysis, and the design of open channels. Understanding these principles is vital for effective water resource management and engineering applications.
Blood finder application project report (1).pdfKamal Acharya
Blood Finder is an emergency time app where a user can search for the blood banks as
well as the registered blood donors around Mumbai. This application also provide an
opportunity for the user of this application to become a registered donor for this user have
to enroll for the donor request from the application itself. If the admin wish to make user
a registered donor, with some of the formalities with the organization it can be done.
Specialization of this application is that the user will not have to register on sign-in for
searching the blood banks and blood donors it can be just done by installing the
application to the mobile.
The purpose of making this application is to save the user’s time for searching blood of
needed blood group during the time of the emergency.
This is an android application developed in Java and XML with the connectivity of
SQLite database. This application will provide most of basic functionality required for an
emergency time application. All the details of Blood banks and Blood donors are stored
in the database i.e. SQLite.
This application allowed the user to get all the information regarding blood banks and
blood donors such as Name, Number, Address, Blood Group, rather than searching it on
the different websites and wasting the precious time. This application is effective and
user friendly.
2. Int J Elec & Comp Eng ISSN: 2088-8708
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nonlinear dependence, but have used many fitting parameters that are of little physical importance [10], [11]
or use iterative techniques that are unsuitable for circuit simulation [12], [13]. Therefore, to provide a better
physical understanding of the device operation, an analytical approach to model the 2-DEG density of
AlGaN / GaN HEMTs is highly desirable.
This work is mainly devoted to formally present all the features necessary for understanding high
electron density transistors based on AlGaN / GaN heterojunction, The crystal structure of GaN and the
concepts of spontaneous and piezoelectric polarizations, The mechanism of the formation of the 2DEG at the
AlGaN / GaN interface then solving Poisson and Schrödinger equations to determine the 2DEG density and
finally deduce the current ids.
2. RESEARCH METHOD
2.1. Spontaneous and Piezoelectric Polarization
The III-V materials crystallographic arrangement studied in this work will be Wurtzite, as seen this
crystalline form is the most stable phase and it provides remarkable physical properties [14]. The
combination of both gallium and nitrogen elements of different electronegativities causes a charge transfer of
the element with a high electronegativity to the element having a low electronegativity. This phenomenon is
the cause of the spontaneous polarization, which is the first characteristic of the gallium nitride. The
spontaneous polarization field of ternary compounds can be calculated by applying Vergard’s law [15].
BCPACPmBCPCBAP spspspmmsp 1
(1)
The GaN is often developed on sapphire, SiC or silicon. The lattice mismatch between GaN and the
substrate imposes a strain (expansion or compression) in the base plane of GaN layers. The deformation of
the lattice GaN entrains a charge barycenter displacement, hence a change in the spontaneous polarization.
This effect is the second characteristic of the gallium nitride called: piezoelectric polarization, which
strengthens or weakens the spontaneous polarization. The piezoelectric polarization field is given by [16]:
)(
)()(
)(
)0(
)()0(
2)(
33
1333
31
mC
mCme
me
a
maa
mPpzAlGaN
(2)
Table 1. Physical parameters of InN, AlN and GaN
InN AlN GaN
a0 (Å) 3.585 3.110 3.189
e31 (C/m2
) -0.57 -0.50 -0.35
e33 (C/m2
) 0.97 1.79 1.27
c13 (GPa) 92 108 106
c33 (GPa) 224 373 398
Psp (C/m2
) -0.042 -0.09 -0.034
Table 1 shows the values for relevant physical parameters of AlN and GaN [17-19]. To calculate the
effects of polarization in AlmGa1-mN alloy we need the lattice constant, piezoelectric constants and elastic
constants of AlmGa1-mN which can be calculated by analogously applying Vergard’s law. To amount of the
polarization induced charge density is given by:
spGaNAlGaNpzsp PPP
(3)
2.2. Calculating the Electronic Density at the Interface
We are particularly interested by the heterojunction AlGaN / GaN, basic element of the barrier layer
and the channel of the transistor studied. The principle of the heterojunction based on contacting of two
semiconductor materials with different bandgap, such as one has a large bandgap, the other has a low
bandgap. Depending on the model of Anderson which is supported on the approximation of Schokley [8],
bringing into contact of these materials, in the case of thermodynamic equilibrium, causes the alignment of
the Fermi level and the transfer of electrons of the wide bandgap material to the low bandgap material. An
electric field is generated at the interface and a band of curvature appears in its vicinity. A potential well is
3. ISSN: 2088-8708
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956
created at low bandgap semiconductor side; hence an accumulation of electrons forms at the interface. In a
HEMT structure, the electrons accumulated in the potential will form a two-dimensional electron gas.
Understanding the physical phenomena governing the operation of the HEMT and the formation of a 2DEG
requires solving the Schrödinger’s equation. With the first two quantum states occupied, the total 2DEG
density in the accumulation layer is given by [20]:
kT
EE
kT
EE
kT
m
En FFe
Fs
10
2
*
exp1exp1ln
(4)
Where EF is the Fermi level, E1 and E2 are quantum state occupied. We establish a first equation of 2DEG
density noted ns (EF) that binds the electrons density at the interface AlGaN/GaN, to the Fermi level. A
second relation of the type ns (Vgs, EF) can be established by integrating the Poisson equation. We obtain
th
F
gsFgss V
q
E
V
qd
EVn
),(
(5)
With ε is GaN dielectric constant. Hence the equation governing the evolution of the threshold voltage
dd
qN
q
E
q
V Dcb
th
2
2 (6)
Where φb is the Schottky barrier height, ΔEc is the conduction band discontinuity between AlGaN and GaN,
ND AlGaN layer doping and d is AlGaN layer thickness. Solving the system of Equations (4) and (5) allows
the evolution of carrier concentration ns in the well as a function of Vgs. We can obtain approximate solutions
in three specific bias ranges: weak inversion, moderate inversion and strong inversion.
2.3. Weak Inversion
For low electrons densities at the interface: the Fermi level is located beyond the first energy sub-
band. Exhibitors appearing in Equation (4) are negative and limited development type ln (1 + ε) = ε of this
equation allows giving:
kT
E
kT
E
kT
E
kT
m
n Fe
s
10
2
*
expexpexp
(7)
For this electric polarization regime, E0 and E1 are less than KT so that
kT
E
kT
m
n Fe
s exp2 2
*
(8)
As well the Fermi energy EF is bonded to the electron density by the relation
kTm
n
kTE
e
s
F *
2
2
ln
(9)
By postponing this expression in the Equation (4) and supposing that the density is weak compared to the
density of states associated with the both first sub-bands, we get:
kT
mVVq
kT
m
n
thgse
s
)(
exp2 2
*
(10)
4. Int J Elec & Comp Eng ISSN: 2088-8708
Analytic Estimation of Two-Dimensional Electron Gas Density and …. (Babaya Asmae)
957
Note that in weak inversion regime, the potential well is quite large and not too deep, it results that the
quantization of electronic states is low and that the structure has an offset relative to a two-dimensional
electron gas.
2.4. Moderate Inversion
In this regime, the Fermi level is at the bottom of the potential well, just a few kT above the
conduction band. The structure then operates near to the threshold. As well we can rewrite the equation:
kT
E
n
kT
E
nn F
s
F
ss 100
(11)
By combining the two equations Equation (4) and Equation (11), we find that:
kTmdnq
m
qdn
mVVkTmq
E
s
s
thgs
F
)(
)(
)()(
0
2
0
(12)
Finally, we get the relation linking ns to Vgs in moderate inversion regime:
kTmdnq
m
qdn
mVVkTmq
nn
s
s
thgs
ss
)(
)(
)()(
exp
0
2
0
0
(13)
With ns0 as the equilibrium sheet carrier density at EF=0.
2.5. Strong Inversion
The electron density in the channel becomes sufficiently important, that the Fermi level goes above
the bottom of the second sub-band E1. The exponentials terms in Equation (4) then become much higher than
1 and we can write approximated as:
102
*
2 EEE
m
n F
e
s
(14)
Hence the expression of EF can be deduced
s
e
F n
m
EE
E *
2
10
2
(15)
Explicit the terms of E0 and E1 is obtained
s
e
sF n
m
nE *
2
3
2
10
2
(16)
By postponing this expression in the Equation (5), we get
thgss
e
s VV
d
m
n
dq
m
dmq
m
n
2
)(
2
)(
2
)(
1 3
2
2
10
*2
2
(17)
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958
In strong inversion regime, the linear term is dominant in ns, so that the electron density follows an
approximately linear law, therefore is given by
thgs
e
e
s VV
mmdq
mmq
n
2*2
*
)(2
)(2
(18)
The HEMT AlGaN/GaN mainly operate in the strong inversion region, the current in this region actually
determines the performance of AlGaN / GaN HEMT for high power applications.
2.6. Current-voltage Characteristic
The drain-source current ids can be obtained from the relation between the current intensity and the
electric charge accumulated in the electron gas [19]:
)(xvwqni sds
(19)
Where w is the gate width, v(x) is the velocity of the electrons in the channel at the abscissa x. The gate
voltage replaced by the effective gate voltage (Vgs-V(x)) at the position x, the electron gas density in the
channel can be expressed as:
thgs
e
e
s VxVV
mmdq
mmq
n
)(
)(2
)(2
2*2
*
(20)
With
csat
c
ExEv
ExE
E
xE
xE
xv
)(,
)(,
)(
1
)(
1
0
(21)
and
dx
xdV
xE
)(
)(
(22)
Using the Equations (19), (20), (21) and (22), we obtain
dx
xdV
VxVV
mmdq
mmq
wq
dx
xdV
E
i thgs
e
e
ds
)(
)(
)(2
)(2)(1
1 2*2
*
1
(23)
The integration of equation along the channel length with the following boundary conditions V(x)x =0 =IdsRs
and V(x) x=Lg=Vds-ids(Rs+Rd)allows reaching the relation ids (Vds)
1
31
2
22
2
4
dsi
(24)
Where
6. Int J Elec & Comp Eng ISSN: 2088-8708
Analytic Estimation of Two-Dimensional Electron Gas Density and …. (Babaya Asmae)
959
))(
2
(
)(2
)(4q
))()2)(((
)(2
)(4q
E
2R
-)R2R(R
)(2
)(2q
=
2
2*2
*
0
2
3
2*2
*
0
2
1
2
1
s
ds
2
d2*2
*
0
2
1
Thgsds
ds
e
e
dsdsdsThgs
e
eds
g
d
e
e
VVV
V
xmdq
mxw
RRVRRVV
xmdq
mxw
E
V
L
R
xmdq
mxw
(25)
3. RESULTS AND ANALYSIS
We calculate the characteristics of AlGaN/GaN HEMT for Lg = 200nm and Wg = 1µm, the value of
the aluminum molar fraction is chosen in the range of [0.2; 0.3], which allows to have a piezoelectric
polarization beneficial for the accumulation of the two-dimensonal electron gas in the quantum well. The
theory mentioned above shows that the density of electrons transferred to the potential well depends on the
Aluminum molar fraction content, the AlGaN layer thikness and AlGaN layer doping. Figure 1 shows the
variations of the 2DEG density as a function of the gate voltage for different values of aluminum molar
fraction. The 2DEG density increases with the aluminum content. This result can be explained by the theory
discussed above. Thus increasing the conduction band discontinuity of AlGaN / GaN heterojunction, makes it
possible to improve the confinement of 2DEG in the quantum well as well as the presence of strong
piezoelectric and spontaneous polarizations at the interface, Which are directly dependent on the aluminum
molar fraction. On the other hand the threshold voltage increases in absolute value with the aluminum molar
fraction.
Figure 1. Variations of the 2-DEG density as function of the gate voltage for different values of aluminum
molar fraction
Figure 2 and Figure 3 show the influence of the AlGaN layer thickness on the calculated 2DEG
density as a function of the voltage applied to the gate, for two structures Al0.2Ga0.8N/ GaN and Al0.26Ga0.74N/
GaN. The variation of the AlGaN layer thickness from 20 nm to 26 nm is associated with an increase in the
2DEG density for the both structure. An increase in the absolute value of the threshold voltage of the HEMT
transistor is also observed. That shows more the AlGaN layer thickness is high, higher the threshold voltage
to be applied to deplete the 2DEG must be raised in reverse polarization. The values of the 2DEG density are
attributed to the presence of the charges induced by the total polarization at the interface of the AlGaN / GaN
heterojunction, as the theory indique. The slope of the plot ns (Vgs) allows us to find the gate capacitance
value of the structure, which is related to the thickness of the AlGaN layer; the latter is growing more
capacities decreases, this is demonstrated for d=20nm the slope is 2.6*1012
cm-2
V-1
, while that for d=26nm the
slope is 1.99*1012
cm-2
V-1
for the firt structure; the same is observed for the second structure, we obtain
2.59*1012
cm-2
V-1
and 1.98*1012
cm-2
V-1
for 20nm and 26nm respectively. It is also observed that the gate
capacitance is more sensitive to the variation in the AlGaN layer thickness than to the variation in the
7. ISSN: 2088-8708
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aluminum molar fraction. This shows that high values of AlGaN layer thickness are favorable to achieve
significant 2DEG density and to obtain low gate capacitance values.
Figure 2. Variations of the 2DEG density for
different values of the AlGaN layer thikness and for
m=0.2
Figure 3. Variations of the 2DEG density for different
values of the AlGaN layer thikness and for m=0.26
The dependency of two-dimensional electron gaz to AlGaN layer doping for m=0.26 is giving by
Figure 4. As the thickness and doping of AlGaN layer increase, the 2DEG density also increases. The
sensitivity of 2DEG to the thickness of the AlGaN layer is greater with a high doping concentration. Also, the
AlGaN layer doping has a larger impact on the 2DEG density at large values of layer thiknes; For AlGaN
layer thickness varie from 10nm to 20nm, we notice that 2DEG slitghly increase with AlGaN layer doping,
thus we observe that 2DEG became more influenced by doping when AlGaN layer thickness are over than
20nm. This result can be explain that the AlGaN layer doping widens the bandgap of the AlGaN
semiconductor, which influences the conduction band discontinuity of AlGaN / GaN heterojunction, that
implies an increase in the 2DEG confinement in the quantum well. Therefore, it is evident that obtaining high
densities of 2DEG requires either a high doping or a higher AlGaN layer thickness.
Figure 4. Variations of the 2DEG density for different values of the AlGaN layer doping
8. Int J Elec & Comp Eng ISSN: 2088-8708
Analytic Estimation of Two-Dimensional Electron Gas Density and …. (Babaya Asmae)
961
The correctness of the current-voltage model depends on the accuracy of the model for the 2DEG
concentration as a function of gate voltage, since it directly affects the electric field in the AlGaN layer.
Figure 5 shows the current-voltage characteristic as a function of the drain-source voltage for different gate-
source voltage values ranging from -8V to 0V. These characteristics correspond to an ideal HEMT structure.
High currents are attributed to very high 2DEG density, resulting from large conduction band discontinuity
and strong polarization effects. The saturation current increases with the gate voltage.
Figure 5. Current-voltage characteristic Ids-Vds for AlGaN/GaN HEMT for different values of Gate voltage
4. CONCLUSION
In this paper, we have analytically estimated the 2DEG density in AlGaN/GaN HEMT, the most
important parameter in characterizing and evaluating the performance of AlGaN/GaN HEMT. First, the
phenomena responsible for formalizing the two-dimensional electron gas have been presented. Also, the
expression of the 2DEG density at the AlGaN / GaN interface and the expression of the current-voltage
characteristic have been established. Second, In order to have a favorable confinement of 2DEG in the
quantum well, the dependency of 2DEG on the Aluminum content, doping and the thickness of the AlGaN
layer has been discussed. The characteristic current-voltage has been presented. High currents are attributed
to very high 2DEG density.
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