This document summarizes the key parameters of an Insulated Gate Bipolar Transistor (IGBT) device model from Mitsubishi. It includes: 1. The model parameters for the IGBT, such as voltage and current values, temperature coefficients, and capacitances. 2. Graphs comparing the simulation results using the model to measurements of the actual device's transfer and saturation characteristics. 3. The simulation circuits used to test the model and validate that it accurately represents the real IGBT's behavior.

1. Device Modeling Report
COMPONENTS: Insulated Gate Bipolar Transistor (IGBT)
PART NUMBER: CM600HA-5F
MANUFACTURER: MITSUBISHI
Simplorer Model
Bee Technologies Inc.
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2. IGBT MODEL PARAMETERS
Name Value Default Model description
TYPE_IGBT 2 2 -2:pIGBT -1:pMOSFET 1:nMOSFET 2:nIGBT
TYPE_FWD 2 2 0:no 1:static 2:dynamic including Irr
TYPE_THERM 2 0 0:isotherm 1,2:dynamic 3:dynamic_heat_pin +10:therm2
TYPE_DYN 0 12 0:stat 1:dyn +10:ext_sync +20:gate_driven
VP 4.43 5 FET Pinch-off Voltage @ref.temperature
K 85 10 FET Transfer Constant @ref.temperature
KLM 0 0 FET Channel Length Modulation Factor
A_FET 831.916882m 400m FET Saturation Factor
M_FET 1.294352379 1.2 FET Saturation Exponent
N_FET 2.3 1.7 Exponent of FET Transfer Characteristic of FET
BN 15 15 BJT Current Gain @ref.temperature
M_BJT 3.3 2 BJT Ideality Factor
ISAT_BJT 131.869869u 1n BJT Saturation Current @ref.temperature
RB_BJT 1m 0 BJT Bulk Resistance
RP_BJT 1T 1E+18 BJT Base Shunt
M_FWD 1.82 2 FWD Ideality Factor
ISAT_FWD 2u 1n FWD Saturation Current @ref.temperature
RB_FWD 1.02m 100u FWD Bulk Resistance
CIN0 165n 100n off switch input capacitance [F]
CIN1 275n 100n on switch input capacitance [F]
CR0 5.5n 5n on switch input capacitance [F]
CR1 26n 5n on switch feedback capacitance [F]
CBE 0 0 const. base emitter capacity [F]
CDS 0 0 const. drain source capacity [F]
COUT 5.6n 10n const. output capacity [F]
TAUBE 0 0 minority lifetime of IGBT base [s]
TAUFD 200n 150n minority lifetime of Diode [s]
TAUTAIL 0 100n tail current duration [s]
DETATAIL 10 10 tail current amplitude [0..100]
LC 10n 10n Collector Connector Inductance
RC 46.6032674u 100u Collector Connector Resistance
LG 0 0 Gate Connector Inductance
RG 0 200m Gate Connector Resistance
LAUX 0 0 Internal Emitter Inductance
RAUX 0 0 Internal Emitter Resistance
LE 10n 10n Emitter Connector Inductance
RE 46.6032674u 0 Emitter Connector Resistance
TEMPAMB 0 THETA Ambient Temperature
TEMPJNCTO 0 THETA Junction Temperature at Simulation Start
TNOM 25 125 Reference Temperature
VNOM 100 3k Nominal Collector-Emitter Voltage
INOM 600 3k Nominal Collector Current
SNOM_ON 30Meg 30Meg Nominal On Switch Gate Voltage Slope @VP
SNOM_OFF 30Meg 30Meg Nominal Off Switch Gate Voltage Slope @VP
VGAP 1.11 1.11 Band Gap Voltage
TC_VP 0 -200m Temperature Coefficient of VP0
TC_K 0 -140m Temperature Coefficient of K0
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3. TC_NFET 0 -800u Temperature Coefficient of N_FET
TC_AFET 0 -4 Temperature Coefficient of A_FET
TC_MFET 0 5m Temperature Coefficient of M_FET
TC_ISAT_BJT 0 -20 Temperature Coefficient of ISAT_BJT
TC_M_BJT 0 300u Temperature Coefficient of M_BJT
TC_M_FWD 0 3m Temperature Coefficient of M_FWD
TC_ISAT_FWD 0 -20 Temperature Coefficient of ISAT_FWD
TC_RB_FWD 0 2m Temperature Coefficient of RB_FWD
TC_CIN0 0 0 TC of CIN0
CC0_CIN0 1 1 CC0 of CIN0
CC_CIN0 0 0 CC of CIN0
VC0_CIN0 1 1 VC0 of CIN0
VC_CIN0 0 0 VC of CIN0
TC_CIN1 0 0 TC of CIN1
CC0_CIN1 1 1 CC0 of CIN1
CC_CIN1 0 0 CC of CIN1
VC0_CIN1 1 1 VC0 of CIN1
VC_CIN1 0 0 VC of CIN1
TC_TR0 0 0 TC of CR0
CC0_CR0 1 1 CC0 of CR0
CC_CR0 0 0 CC of CR0
VC0_CR0 1 1 VC0 of CR0
VC_CR0 0 0 VC of CR0
SC_CR0 0 0 SC of CR0
TC_CR1 0 0 TC of CR1
CC0_CR1 1 1 CC0 of CR1
CC_CR1 0 0 CC of CR1
VC0_CR1 1 1 VC0 of CR1
VC_CR1 0 0 VC of CR1
SC_CR1 0 0 SC of CR1
TC_TAUFD 0 0 TC of TAUFD
CC0_TAUFD 1 1 CC0 of TAUFD
CC_TAUFD 0 0 CC of TAUFD
VC0_TAUFD 1 1 VC0 of TAUFD
VC_TAUFD 0 0 VC of TAUFD
SC_TAUFD 0 0 SC of TAUFD
VBREAK_CE 500 1T Output Voltage Breakdown
VBREAK_GE 50 1T Input Voltage Breakdown
IBREAK 2.5k 1Meg Output Current Breakdown
TEMPBREAK 300 500 Temperature Breakdown
RFAULT_CE 100m 1T Remaining Breakdown Output Resistance
RFAULT_GE 1 1T Remaining Breakdown Input Resistance
CTHT1 100m 100m 1. thermal transistor capacity
RTHT1 4m 4m 1. thermal transistor resistance
CTHT2 1 1 2. thermal transistor capacity
RTHT2 2m 2m 2. thermal transistor resistance
CTHT3 10 10 3. thermal transistor capacity
RTHT3 5m 5m 3. thermal transistor resistance
CTHT4 100 100 4. thermal transistor capacity
RTHT4 1m 1m 4. thermal transistor resistance
CTHD1 100m 100m 1. thermal diode capacity
RTHD1 4m 4m 1. thermal diode resistance
CTHD2 1 1 2. thermal diode capacity
RTHD2 2m 2m 2. thermal diode resistance
CTHD3 10 10 3. thermal diode capacity
RTHD3 500u 500u 3. thermal diode resistance
CTHD4 100 100 4. thermal diode capacity
RTHD4 100u 100u 4. thermal diode resistance
CTHDT 1k 1k common thermal capacity
RTHDT 10u 10u common thermal resistance
DAMPING 1 1 damping constant
SYNC 0 0 Synchronisation Value
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4. Transfer Characteristics
Circuit Simulation result
Evaluation circuit
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5. Comparison Graph
Circuit Simulation Result
1200.0
Measurement
Simulation
1000.0
COLLECTOR CURRENT, IC (A)
800.0
600.0
400.0
200.0
0.0
0.00 2.00 4.00 6.00 8.00 10.00
GATE EMITTER VOLTAGE, VGE (V)
Simulation Result
Test condition : VCE = 10 V
VGE (V)
IC (A) Error (%)
Measurement Simulation
4.8 4.5 4.54 0.89
80 4.75 4.82 1.47
240 5 5.063 1.26
480 5.25 5.29 0.76
830 5.5 5.519 0.35
1200 5.75 5.707 -0.75
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6. Saturation Characteristics
Circuit Simulation result
Evaluation circuit
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7. Comparison Graph
Circuit Simulation Result
2.000
Measurment
Simulation
COLLECTOR-EMITTOR SATURATION
1.500
VOLTAGE, VCE(sat) (V)
1.000
0.500
0.000
0 200 400 600 800 1000 1200
COLLECTOR CURRENT, IC (A)
Simulation Result
Test condition : VGE = 15 V
VCE(sat) (V)
Ic(A) Error (%)
Measurement Simulation
100 0.900 0.88 -2.22
200 1.000 1.03 3.00
500 1.120 1.15 2.68
1000 1.300 1.27 -2.31
1200 1.370 1.32 -3.65
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8. Output Characteristics
Circuit Simulation result
Evaluation circuit
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9. Fall Time Characteristics
Circuit Simulation result
Evaluation circuit
IC=600A, VCC=100V
Measurement Simulation Error(%)
VGE=10V, RG=4.2Ω
Td(off) [ns] 1000 1008 0.80
Tf [ns] 500 499.7 -0.06
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10. Forward Current Characteristic
Circuit Simulation Result
VF
IF
Evaluation Circuit
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11. Comparison Graph
Circuit Simulation Result
10000
Measurement
Simulation
EMITTER CURRENT, IF (A)
1000
100
10
0.6 0.8 1 1.2 1.4 1.6 1.8
EMITTER-COLLECTOR VOLTAGE, VEC (V)
Simulation Result
VEC(V)
IDR(A) %Error
Measurement Simulation
10 0.73 0.74 1.37
20 0.78 0.775 -0.64
50 0.86 0.85 -1.16
100 0.945 0.935 -1.06
200 1.075 1.06 -1.40
500 1.32 1.3 -1.52
1000 1.62 1.63 0.62
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12. Diode Reverse Recovery Characteristics
Circuit Simulation result
Qrr
650.00
500.00
400.00
FWD1.I [A]
300.00
200.00
FWD...
100.00
0
-100.00
-250.00
2.9000m 2.9015m 2.9025m 2.9035m 2.9050m
t
Evaluation circuit
IE=600A,
Measurement Simulation %Error
diE/dt=-1200A/us
Qrr [uC] 9.5 9.331 -1.78
All Rights Reserved Copyright (C) Bee Technologies Inc. 2011