The document presents a detailed modeling report for the TLP521-2 photocoupler, manufactured by Toshiba, including various electrical characteristics and modeling parameters for devices like diodes and bipolar junction transistors. It contains simulation results, evaluation circuits, and comparison tables for input device characteristics, current transfer ratios, and switching times. The content also includes measurement vs. simulation data for different operating conditions and associated percentage errors.

1. Device Modeling Report
COMPONENTS : PHOTOCOUPLER
PART NUMBER : TLP521-2
MANUFACTURER : TOSHIBA
REMARK : SAMPLE A
Bee Technologies Inc.
All Rights Reserved Copyright (c) Bee Technologies Inc. 2005

2. DIODE MODEL
Pspice model
Model description
Parameter
IS Saturation Current
N Emission Coefficient
RS Series Resistance
IKF High-injection Knee Current
CJO Zero-bias Junction Capacitance
M Junction Grading Coefficient
VJ Junction Potential
ISR Recombination Current Saturation Value
BV Reverse Breakdown Voltage(a positive value)
IBV Reverse Breakdown Current(a positive value)
TT Transit Time
BIPOLAR JUNCTION TRANSISTOR MODEL
Pspice model
Model description
parameter
NR Reverse Emission Coefficient
RB Base Resistance
RC Series Collector Resistance
CJE Zero-bias Emitter-Base Junction Capacitance
CJC Zero-bias Collector-Base Junction Capacitance
TF Forward Transit Time
TR Reverse Transit Time
VOLTAGE CONTROLLED VOLTAGE SOURCE MODEL(VCVS)
E<Name><(+)Node><(－)Node>VALUE={Expression}
E<Name><(+)Node><(－)Node>TABLE={Expression}
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3. VOLTAGE CONTROLLED CURRENT SOURCE MODEL(VCCS)
E<Name><(+)Node><(－)Node>VALUE={Expression}
CURRENT CONTROLLED MODEL(W)
Pspice model
Model description
parameter
IOFF Controlling current to Off state
ION Controlling current to On state
ROFF Off Resistance
RON On Resistance
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4. Input Device Forward Current Characteristics
Measurement
Simulation
Input Device Junction Capacitance Characteristics
Measurement
Simulation
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5. Input Device Reverse Recovery Characteristics
Measurement
trj=120n(s)
trb=288n(s)
Conditions:Ifwd=Irev=0.04(A),Rl=50
Example
Relation between trj and trb
All Rights Reserved Copyright (c) Bee Technologies Inc. 2005

6. LED IV Curve Characteristics
Evaluation Circuit
U1
1 8
2 7
3 6
4 5
TLP521_2 V1
I1
1.6Vdc
0mAdc
0 0
Simulation result
Simulation
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7. Comparison Table
Vfwd(V)
Ifwd(A) % Error
Measurement Simulation
0.0001 0.92 0.927116 0.773
0.0002 0.96 0.961572 0.164
0.0005 1.01 1.0076 -0.238
0.001 1.05 1.0427 -0.695
0.002 1.09 1.0785 -1.055
0.005 1.125 1.1283 0.293
0.01 1.165 1.1697 0.403
0.02 1.21 1.2182 0.678
0.05 1.31 1.3060 -0.305
All Rights Reserved Copyright (c) Bee Technologies Inc. 2005

8. Transistor Saturation Characteristics
Evaluation Circuit
U1
1 8
2 7
3 6
4 5
TLP521_2
I1
I2
8mAdc
2.4mAdc
0 0
Simulation result
Simulation
Comparison Table
Measurement Simulation % Error
Vce (sat) 0.4 V 0.398485 V -0.379
All Rights Reserved Copyright (c) Bee Technologies Inc. 2005

9. CTR(Current Transfer Ratio) Characteristics
Evaluation Circuit
V2 U1 V3
1 8
0Vdc 0Vdc
2 7
3 6
4 5
V1
TLP521_2
I1 5Vdc
5mAdc
0 0
Simulation result
Simulation
All Rights Reserved Copyright (c) Bee Technologies Inc. 2005

10. Rise Curve Table
CTR(%)
If(mA) % Error
Measurement Simulation
0.5 95 95.875 0.921
1 160 154.340 -3.538
3 250 246.570 -1.372
5 300 289.174 -3.609
8 330 328.211 -0.542
10 350 350.044 0.013
Fall Curve Table
CTR(%)
If(mA) % Error
Measurement Simulation
10 350 350.044 0.013
20 280 268.431 -4.132
30 230 220.757 -4.019
40 190 186.974 -1.593
50 160 160.801 0.501
60 140 139.438 -0.401
All Rights Reserved Copyright (c) Bee Technologies Inc. 2005

11. Switching Time Characteristics
Evaluation Circuit
V2 U1
1 8
0Vdc
2 7
3 6 R1
1.9k
4 5
I1 = 0
TLP521_2
I2 = 16m I1
TD = 10u
TR = 10n
TF = 10n V1
PW = 20u 5Vdc
PER = 500u
0 0
Simulation result
Simulation
Comparison Table
VCC=5V,IF=16mA,RL=1.9k Measurement Simulation % Error
Ts (us) 15 14.966 -0.227
Toff (us) 25 24.920 -0.320
All Rights Reserved Copyright (c) Bee Technologies Inc. 2005