The document provides a detailed modeling report of the Toshiba power MOSFET (TPC8114) and related body diode characteristics, including various electrical parameters, PSpice models, and simulation results. It includes analyses of Vgs-Id characteristics, gate charge, capacitance, switching time, output characteristics, and reverse recovery properties, alongside measurement comparisons to highlight simulation accuracy. Additionally, it incorporates ESD protection diode analysis with zener voltage characteristics, all deemed crucial for understanding device performance.

1. Device Modeling Report
COMPONENTS: Power MOSFET (Standard)
PART NUMBER: TPC8114
MANUFACTURER: TOSHIBA
Body Diode (Standard) / ESD Protection Diode
Bee Technologies Inc.
All Rights Reserved Copyright (c) Bee Technologies Inc. 2005

2. MOSFET MODEL
Pspice model
Model description
parameter
LEVEL
L Channel Length
W Channel Width
KP Transconductance
RS Source Ohmic Resistance
RD Ohmic Drain Resistance
VTO Zero-bias Threshold Voltage
RDS Drain-Source Shunt Resistance
TOX Gate Oxide Thickness
CGSO Zero-bias Gate-Source Capacitance
CGDO Zero-bias Gate-Drain Capacitance
CBD Zero-bias Bulk-Drain Junction Capacitance
MJ Bulk Junction Grading Coefficient
PB Bulk Junction Potential
FC Bulk Junction Forward-bias Capacitance Coefficient
RG Gate Ohmic Resistance
IS Bulk Junction Saturation Current
N Bulk Junction Emission Coefficient
RB Bulk Series Resistance
PHI Surface Inversion Potential
GAMMA Body-effect Parameter
DELTA Width effect on Threshold Voltage
ETA Static Feedback on Threshold Voltage
THETA Modility Modulation
KAPPA Saturation Field Factor
VMAX Maximum Drift Velocity of Carriers
XJ Metallurgical Junction Depth
UO Surface Mobility
All Rights Reserved Copyright (c) Bee Technologies Inc. 2005

3. Body Diode Model
Pspice model
Model description
parameter
IS Saturation Current
N Emission Coefficient
RS Series Resistance
IKF High-injection Knee Current
CJO Zero-bias Junction Capacitance
M Junction Grading Coefficient
VJ Junction Potential
ISR Recombination Current Saturation Value
BV Reverse Breakdown Voltage(a positive value)
IBV Reverse Breakdown Current(a positive value)
TT Transit Time
Circuit Configuration
TPC8114
All Rights Reserved Copyright (c) Bee Technologies Inc. 2005

4. Vgs-Id Characteristic
Circuit Simulation result
Evaluation circuit
V3
U7
0V dc
TP C8 114
V2
-5V dc
V1
-10
0
All Rights Reserved Copyright (c) Bee Technologies Inc. 2005

5. Comparison Graph
Circuit Simulation Result
Simulation Result
VGS(V)
ID(A) Error (%)
Measurement Simulation
-2.50 -2.00 -1.95 -2.50
-10.00 -2.20 -2.14 -2.73
-25.00 -2.40 -2.37 -1.25
-45.00 -2.60 -2.58 -0.77
All Rights Reserved Copyright (c) Bee Technologies Inc. 2005

6. Id-Rds(on) Characteristic
Circuit Simulation result
Evaluation circuit
V3
U7
0V dc
TP C8 114
V2
-5V dc
V1
-10
0
Simulation Result
ID=-9, VGS=-10V Measurement Simulation Error (%)
R DS (on) 3.1 m 3.1 m 0
All Rights Reserved Copyright (c) Bee Technologies Inc. 2005

7. Gate Charge Characteristic
Circuit Simulation result
-20V
-10V
0V
0 20n 40n 60n 80n 100n 120n 140n 160n 180n 200n 220n
V(W1:2)
Time*10ms
Evaluation circuit
V2
0Vdc
U7
TPC8114_S
D1
ION = 0uA
IOFF = 10mA I2
I1 = 0 W Dbreak
I1 - -18Adc
I2 = 10m +
TD = 0
TR = 10n W1
TF = 10n V1
PW = 600u -24Vdc
PER = 1000u
0
Simulation Result
VDD=-24V,ID=-18A Measurement Simulation Error (%)
,VGS=-10V
Qgs 10 nC 9.86 nC - 1.4
Qgd 60 nC 59.659 nC - 0.568
All Rights Reserved Copyright (c) Bee Technologies Inc. 2005

8. Capacitance Characteristic
Measurement
Simulation
Simulation Result
Cbd(pF)
VDS(V) Error(%)
Measurement Simulation
0.1 300.0 297.0 - 1.0
0.2 200.0 204.0 2.0
0.5 100.0 101.0 1.0
1.0 50.0 48.0 - 4.0
All Rights Reserved Copyright (c) Bee Technologies Inc. 2005

9. Switching Time Characteristic
Circuit Simulation result
-15V
VDS = -15V VGS = 0/-10V
-10V
-5V
0V
4.75us 4.85us 4.95us 5.05us 5.15us 5.25us
V(2) V(3)/1.5
Time
Evaluation circuit
V3
0Vdc L1
50nH
RL
U7 16.5
R1 L2 TPC8114_S
2
V1 = 0
V1 4.7 30nH VDD
V2 = -20
TD = 5u R2
TR = 6n -15
TF = 7n 4.7
PW = 10u
PER = 1000u
0 0 0 0
Simulation Result
ID=-9A, VDD=-15V
Measurement Simulation Error(%)
VGS=0/-10V
ton 36.00 ns 35.90 ns -0.29
All Rights Reserved Copyright (c) Bee Technologies Inc. 2005

10. Output Characteristic
Circuit Simulation result
-3V
-2.6V
-2.4V
-2.2V
VGS=-2.0V
Evaluation circuit
V3
U7
0V dc
TP C8 114
V2
-5V dc
V1
-10
0
All Rights Reserved Copyright (c) Bee Technologies Inc. 2005

11. Forward Current Characteristic
Circuit Simulation Result
Evaluation Circuit
R1
0.01m
D1
V1
0Vdc
D8114
0
All Rights Reserved Copyright (c) Bee Technologies Inc. 2005

12. Comparison Graph
Circuit Simulation Result
Simulation Result
Vfwd(V) Vfwd(V)
Ifwd(A) %Error
Measurement Simulation
0.010 0.514 0.515 0.195
0.020 0.534 0.533 -0.187
0.050 0.558 0.557 -0.179
0.100 0.576 0.576 0.000
0.200 0.598 0.596 -0.334
0.500 0.630 0.624 -0.952
1.000 0.648 0.651 0.463
2.000 0.682 0.686 0.587
5.000 0.766 0.763 -0.392
All Rights Reserved Copyright (c) Bee Technologies Inc. 2005

13. Forward Current Characteristic Reference
All Rights Reserved Copyright (c) Bee Technologies Inc. 2005

14. Reverse Recovery Characteristic
Circuit Simulation Result
400mA
300mA
200mA
100mA
-0mA
-100mA
-200mA
-300mA
-400mA
14.8us 15.0us 15.2us 15.4us 15.6us 15.8us
I(R1)
Time
Evaluation Circuit
R1 U7
50
V1 = {-9.43} V1
V2 = {10.6}
TD = 0
TR = 10n TPC8114
TF = 10n
PW = 15u
PER = 100u
0
0
Compare Measurement vs. Simulation
Measurement Simulation Error(%)
trr=trj+trb 272.00 ns 272.14 ns 0.05
All Rights Reserved Copyright (c) Bee Technologies Inc. 2005

15. Reverse Recovery Characteristic Reference
Trj=22(ns)
Trb=250(ns)
Conditions:Ifwd=lrev=0.2(A),Rl=50
Example
Relation between trj and trb
All Rights Reserved Copyright (c) Bee Technologies Inc. 2005

16. ESD PROTECTION DIODE SPICE MODEL
Zener Voltage Characteristic
Circuit Simulation Result
Evaluation Circuit
R1
0.01m
V1 DZ8114
0Vdc U2
0
All Rights Reserved Copyright (c) Bee Technologies Inc. 2005

17. Zener Voltage Characteristic Reference
All Rights Reserved Copyright (c) Bee Technologies Inc. 2005