Nanoelectronics refers to using nanotechnology in electronic components to develop nanomachines by scientific methods at the atomic scale. The goal is to reduce the size, risk, and surface area of materials and molecules. Moore's Law predicted that the number of transistors on integrated circuits would double every two years. The semiconductor roadmap assesses requirements to continue Moore's Law by advancing integrated circuit performance and removing roadblocks. Nanolithography techniques like optical lithography, x-ray lithography, and immersion lithography are used in the top-down approach to fabricate leading-edge semiconductors and NEMS through multiple lithographic cycles. The bottom-up approach involves molecular components self-assembling into larger structures from

1. Approaches of Nanoelectronics
Presented by
Aravinth
II-MSc Nanoscience and Technology
Alagappa University, Karaikudi

2. Nanoelectronics
• Nanoelectronics refer to the use of nanotechnology in electronic
components
• Make use of scientific methods at atomic scale for developing the
Nanomachines
• Main target is reduce the size, risk factor and surface area of the
materials and molecules

3. Moore predicted that this trend would continue for
the foreseeable future.
Moore’s Law

5. Semiconductor Road Map
• The International Road Map Technology of
Semiconductors (IRTS) is an assessment of the
semiconductor industry’s technology requirement.
• IRTS is advance performance of integrated circuits
and remove roadblocks to the continuation of Moore’s
Law.

6. The “Top-Down” Approach
• A Top-Down approach is
essentially the breaking down of
a system to gain insight into its
compositional sub-systems.
• Each sub-systems is then refined
in yet greater detail, sometimes
in many additional sub-system
levels, until the entire
specification is reduced to base
elements.
• The invention of transistor in
1947. The first transistor was a
bipolar device consisting of two
sharp metal wires.
size year
100µm 1960
1µm 1980
130nm 2001
90nm 2003
60nm 2005
45nm 2007
32nm 2010
16nm 2017
10nm 2018
7nm 2019

7. • In the bottom-up approach, molecular components
arrange themselves into more complex assemblies
atom-by-atom, molecule-by-molecule,
Cluster-by-cluster from the bottom
• These clusters come together to form self
assembled monolayers on the surface of substrate
• Fabrication is much less expensive
Bottom-Up Approach

8. Nanolithography
Nanolithography is used during the fabrication of leading –edge semiconductor
integrated circuits (nanocircuitry) or nanoelectromechanical system (NEMS)
Nanolithography is that branch of Nanotechnology, which deals with the study
And applications of fabrication of nanoscale structures like semiconductor circuits.
There are many types of lithography;
• Optical Lithography
• X-ray Lithography
• Magneto Lithography
• Extreme Ultraviolet Lithography
• Immersion Lithography

9. Optical Lithography
(or)
Photolithography or UV lithography
• It is most commonly used nanolithography.
• Selectively remove the parts of a thin films or the bulk of a substrate.
• It uses light to transfer a geometric pattern from a photo
mask to a light sensitive chemical photo resist on the substrate
• A modern CMOS will go through the photolithographic
cycle up to 50 times.
X-Ray lithography

10. Magneto Lithography
• ML based on applying a magnetic field on
the substrate using paramagnetic
metal masks named "magnetic mask".
• The second component of the process
is ferromagnetic nanoparticles
• It advantage is producing multilayer with
high accuracy of alignment and with the
same efficiency for all layers.

11. Extreme ultraviolet lithography
Extreme ultraviolet lithography is a next-generation
lithography technology using a range of extreme
ultraviolet (EUV) wavelengths
EUV is currently being developed for high volume use by
2020.
EUV multilayer and absorber (purple) constituting mask
pattern for imaging a line.
EUV radiation (red) reflected from the mask pattern is
absorbed in the resist (yellow) and substrate (brown),
producing photoelectrons and secondary electrons (blue).
These electrons increase the extent of chemical reactions in
the resist. A secondary electron pattern that is random in
nature is superimposed on the optical image. The
unwanted secondary electron exposure results in loss of
resolution, observable line edge roughness and linewidth
variation. Image formation mechanism in EUV lithography

12. Immersion lithography
Immersion lithography is a photolithography resolution enhancement technique
for manufacturing integrated circuits (ICs) that replaces the usual air gap
between the final lens and the wafer surface with a liquid medium that has a
refractive index greater than one.

13. Innovative nanoelectronic devices:
There are numerous devolvement in the field of nanoelectronics, just to list few:
Carbon nanotube devices (CNT devices)
The first application of CNT’s are wiring of microelectronic circuits and its
uses as field emitters for high resolution flat banal displays and other
is carbon nanotube transistors.
Nanowires:
Semiconductor nanowires are used in electronic devices including field emitting transistors,
sensors, detectors and light emitting diodes.
Advantages of nanoelectronics:
• Compact
• Less energy consumption
• More efficient
• Enhanced device, better security and many more
Application of Nanoelectronics:
• Wearable, flexible electronics
• Optoelectronics
• Bioelectronics
• Energy storage devices
• Nano structured sensors

14. Reference:
wikipedia.org/
newatlas.com
nanowerk.com
academia.edu
nano.gov
spiedigitallibrary.org