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Branson/IPC 3000 Software Key Features
Branson/IPC 3000 Specifications*
 Wafer Size: Sample to 200mm Capability. Multiple wafer size without
hardware change
 Throughput: High Throughput. Up to 75 WPH. Process Dependent .
 Temperature: No heating function. N2 plasma can heat the substrate up
to 170 C.
 Gas Lines: Up to 5 gas lines with MFCs. Popular MFC Range: 2 SLM O2
and 1 SLM N2 .
 Asher Rate: 0-0.1u/min. positive PR; >0.2u/min. negative PR
 Uniformity: 25%. Clear all photoresist without uniformity requirement
 Particulate: <0.05 /cm2 (0.03um or greater)
 Damage: Low damage with Faraday Cage if necessary.
 Selectivity: >1000:1
 MTBF/MTTA/MTTR: 450 Hours/100 Hours/3.5 Hours or Better. 95%
uptime

Company Introduction and Main Products
ALLLWIN21 CORP.
Introduction
Equipment Key Features
Allwin21 Corp. is the exclusive licensed manufacturer of AG
Associates Heatpulse 610 Rapid Thermal Process tool. We are
manufacturing the new AccuThermo AW Series Atmospheric and Vacuum
Rapid Thermal Processors. Compared with traditional RTP systems,
Allwin21’s AccuThermo AW RTPs have innovative software and more
advanced real time temperature control technologies to achieve the BEST
rapid thermal processing performance (repeatability, uniformity, and stability)
with decades of research directly applicable to ours.
We focus on extending product lifecycle, providing solutions, and engineering
enhancements to many production proven semiconductor process equipment
most directly related to III-V processing. These semiconductor equipment
ha e een used in production and D since the 0 s hey ha e pro en
processes and research. Allwin21 Corp. can customize these systems with
All in2 s compara le inte rated process control system ith PC, solid
robotic wafer transfer system, and new critical components. This is to
achieve the goal of giving our customers a production edge, with right cost,
and without having to worry about obsolete parts.
Allwin21 Corp. was formed in 2000 with a focus on professionally providing
Rapid Thermal Process, Plasma Asher Strip / Descum, Plasma Etch/RIE,
Sputter Deposition and Metal Film Metrology high-tech semiconductor
equipment, services and technical support in Semiconductor III-V, MEMS,
Biomedical, Nanotechnology, Solar, Battery & LED industries. We endeavor
to be a leader in our product lines. To achieve this, we have been providing
unique innovative and cost-effective technical solutions, high quality
equipment, and on time spare parts delivery worldwide. We have
maintained a global presence that has grown and expanded into the major
high-tech manufacturing areas of the world. We pride ourselves on
developing and continuing lasting customer relationships.
We understand that a timely responsive support and service are critical
elements in semiconductor industries. Allwin21’s experienced engineer team
is the best guarantee for high quality service and support. We provide
on-site installation, training, maintenance, system optimization, retrofits,
and/or customized upgrades
Allwin21 Overview
What sets us apart from the competition…
1) Exclusive licensed manufacturer of Heatpulse 610 of AG Associates.
2) Advanced Allwin21 Real Time PC Control Technology.
3) Focus on Production-Proven process technology.
4) Integrated 3-axis solid robotic wafer transfer technology.
5) Experienced local engineer support.
6) Products made in U.S.A
Plasma Asher, Plasma Descum, Dry Clean,
Semiconductor Equipment, Used
Semiconductor Equipment, Semiconductor
Process Equipment, atri 0 , atri 20 ,
atri 303, atri 403, atri 0 , atri
04, atri 02, atri 0 , atri 0
Plasma Asher, Plasma Descum, Dry Clean,
Semiconductor Equipment, Used
Semiconductor Equipment, Semiconductor
Process Equipment, Branson/IPC 2000,
Branson/IPC 3000, Branson/IPC 4000,
Barrel Asher, Barrel Etch, Barrel Etcher
Plasma Asher, Plasma Descum, Dry Clean,
Semiconductor Equipment, Used
Semiconductor Equipment, Semiconductor
Process Equipment, asonics Aura 000,
asonics Aura 2000, asonics Aura 3000,
asonics 3 0, asonics Aura 30 0
Plasma Etcher, Please Etchin , Dry
Etchin , Dry Clean, Semiconductor
Equipment, Used Semiconductor
Equipment, Semiconductor Process
Equipment, e al 0 e, e al 03e, e al
0 e , e al
Plasma Etcher, Please Etchin , Dry
Etchin , Dry Clean, Semiconductor
Equipment, Used Semiconductor
Equipment, Semiconductor Process
Equipment, asonics AE 200 , icro a e
Etcher, icro a e Plasma Etcher,
icro a e Etch
apid hermal Process, apid hermal
Processin , apid hermal Anneal, apid
hermal Annealin , apid hermal
idation, apid hermal itride, A,
P, , ,, Semiconductor
Equipment, Used Semiconductor
Equipment, Semiconductor Process
Equipment, A 2 0, A 3 0, A 4 0,
A 0, A 0I, A Associates,
eatpulse 2 0, eatpulse 4 0, inipulse
3 0, eatpulse 0, eatpulse 0I, A
eatpulse 4 0, A eatpulse 0, A
eatpulse 2 0, A inipulse 3 0,
eatpulse 4 00, eatpulse 4 0 ,
eatpulse 0 , eatpulse 00,
Atmospheric apid hermal Process,
acuum apid hermal Process, urnace,
en, hermal urnace, hermal Process,
hermal Processin
1) Rapid Thermal Process
• AccuThermo AW 610M
• AccuThermo AW 820M
• AccuThermo AW 820V
• AccuThermo AW820R
2) Sputter Deposition
• AccuSputter AW 4450
3) Plasma Asher Descum
• AW-105R
• AW-1008
• AW-B3000
4) Plasma Etch/RIE
• AW-901eR
• AW-903eR
• AW-2001R
5) Upgraded Kit for:
• Heatpulse 210,310,410,610
• Matrix X0X
• Tegal 90Xe
• Gasonics Aura 1000/2000LL/3000/3010
• Gasonics AE 2001/2000LL
• Gasonics L3510/L3500
• Perkin-Elmer 24XX,4XXX Sputter
• MRC 6XX, 9XX Sputer
• TES 6XX,9XX Sputter
• Branson/IPC 3000/2000/4000
• Lam AutoEtch 490/590/69
• Lam Rainbow 4XXX Series
6) Sheet Resistance Measurement
• AWgage-150
• AWgage-200
Tel.: 408-778-7788 E-mail: sales@allwin21.com Website: www.allwin21.com
All specification and information here are subject to change without notice and can not be used for purchase and facility plan. Address:220 Cochrane Circle, Morgan Hill,CA95037, U.S.A.
Metal Film Metrology
ALLLWIN21 CORP.
AWgage-150/200
Introduction
AWgage-150/200 measure sheet resistance in ohms per square or milliohms per square. If specific resistivity is known, the thickness of the
deposited film layer can be computed from the sheet resistance. The choice of measurement data is easily get in the software. AWgage-150 can
accommodate 150mm (6") wafers as well as the standard 2", 3",4", 5" wafers without any hardware change. AWgage-200 can accommodate 200mm
(8") wafers as well as the standard 5" , 6" wafers without any hardware change.
AWgage-150/200 Key Features
30 years proven Eddy Sheet Resistance Measurement technology.
Non-contact Sheet Resistance Measurement.
1mΩ/square to 19,990Ω/square sheet resistance measurement range.
100Å to 270kÅ Metal Film Thickness range.
Touch Screen Monitor GUI and PC w/ Advanced Allwin21 software.
Wafer carriage travel programmed with internal encoder step motor ,
without encoder disk.
Consistent wafer-to-wafer process cycle repeatability.
Small footprint and energy efficient.
Made in U.S.A.
AWgage-150/200 Specifications
• Perform odd number of site tests: 1 to 9 points
• Highly Conductive or Metal Sheet Resistance
1 to 1,999 mΩ/square
1 to 1,999 Ω/square
Or 10 to 19,990 Ω/square
• Highly Conductive or Metal Film Thickness
Minimum: 100 Ångström
Maximum: Proportional to resistivity. Maximum for a
resistivity of 2.7 µΩ-cm is 270 k Å (27 µm)
• Sheet Resistance Repeatability
Total repeatability is the standard deviation (σ) percent of
mean value(X),1 count.
Range s/X (±%)
1 to 100 mΩ/sq; Ω/sq 1
100 to 500 ΩW/sq; Ω/sq 2
500 to 1000 mΩ/sq; Ω/sq 4
1000 to 1,999 mΩ/sq; Ω/sq 6
1,999 to 5,000 Ω/sq Consult Factory
5000 to 10,000 Ω/sq Consult Factory
10,000 to 15,000 Ω/sq Consult Factory
Introduction
AWgage-150/200 Configuration
 Main Frame
 Wafer Carriage (2”-6” or 5”-8 )
 Measurement Head
 RF Tank Circuit board
 Pentium® class computer board
 Main control board
 Motor control board.
 Two USB Ports
 Two Extra DB9 Ports
 15–inch touch screen GUI
 Allwin21 Corp proprietary
software package.
 Mouse & keyboard .
 USB Flash Drive with AW
Software backup.
 CE Certification (Optional)
Tel.: 408-778-7788 E-mail: sales@allwin21.com Website: www.allwin21.com
All specification and information here are subject to change without notice and can not be used for purchase and facility plan. All used equipment trademarks belong to the OEM. Address:220 Cochrane Circle, Morgan Hill,CA95037
RFQ for Fast Free Quotation
Sheet Resistance Measurement
ALLLWIN21 CORP.
AWgage-150/200 Software Key Features
The AWgage-150/200 system is controlled by menu commands from the
control software. This software allows a great deal of flexibility and control
of the Allwin21 system. The AWgage-150/200 control software features the
following:
• Automated calibration of all subsystems from within the control
software. This allows faster and easier calibration, leading to enhanced
process results. The AWgage allows calibration of the ohm and
milliohm measurements within the software for maximum performance
and accuracy. This provides a much easier and faster method to
calibrate the instrument than by adjusting pots on the back of the
traditional Sheet Resistance Measurement Instrument.
• The SOFTWARE can compensate for where the flat is on the carriage
to locate the test points.
• It features a recipe editor to create and edit recipes to fully automate
the processing of wafers on the Allwin21 system.
• Validation of the recipe so improper points will be revealed.
• Storage of multiple recipes, process data and calibration files so that
process and calibration results can be maintained and compared over
time.
• Passwords provide security for the system, recipe editing, diagnostics,
calibration and setup functions.
• Simple and easy to use menu screens which allow an automatic cycle
to be easily defined and executed.
• Troubleshooting features which allow engineers and service personnel
to activate individual subassemblies and functions.
AWgage-150 Facilities Requirements
• Instrument needs to be on a hard/solid surface.
• The room temperature should be close to 23° C for the greatest
measurement accuracy.
• Avoid environments with high concentrations of particulates, especially
abrasives such as glass and silicon dust.
• Power : 50/60Hz, Single Phase, 110/220VAC, 2 Amps
• Weight and Dimensions: 44 LBs ; 11 inch (W) X 18 inch (D) X 22 inch (H)
AWgage-150/200 Measurement Processes
• Turn on the power to the AWgage. Allow 30 minutes for
warming up.
• Select an existing recipe or create a new recipe.
• When The carriage is in the loading position, place the wafer on
the carriage between the four locator blocks. The wafer will be
centered over the circular platform that rotates the wafer.
• Manual Mode: Press the MAN/AUTO button, so the LED is off.
Momentarily press the START/STANDBY button. The carriage
will move the wafer under the measurement head to the first point
in the measurement sequence. For multi-point
measurements--press START/STANDBY once for each point in
the measurement sequence. The wafer will be advanced to the
next point. When the measurement sequence is complete the
carriage will move to the right until the wafer is out from under the
measurement head in the loading/unloading position. The wafer
can be removed from the carriage after it has reached this
position.
• Automatic Mode: Press the MAN/AUTO button on the
AWgage control panel until the LED comes on. Press the
START/STANDBY button. The entire measurement sequence
will be performed without further operator intervention. When the
sequence is complete, the wafer will be moved to the unloading
position.
• PC Screen Mode: Press the “Start Test” button at the Process
Screens (for Engineer or Production) to test the wafer that is on
the wafer carriage, using the selected recipe. The entire
measurement sequence will be performed without further
operator intervention. When the sequence is complete, the wafer
will be moved to the unloading position.
• All data measurements are recorded in the computer for later
retrieval, inspection and, if desired, a print-out of the measured
points can be printed on an external printer.
Recipe Editor Start Test Testing Data
Tel.: 408-778-7788 E-mail: sales@allwin21.com Website: www.allwin21.com
All specification and information here are subject to change without notice and can not be used for purchase and facility plan. All used equipment trademarks belong to the OEM. Address:220 Cochrane Circle, Morgan Hill,CA95037
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Allwin21 Product Brochures-AWgage Metrology-2024.5.pdf

  • 1. Branson/IPC 3000 Software Key Features Branson/IPC 3000 Specifications*  Wafer Size: Sample to 200mm Capability. Multiple wafer size without hardware change  Throughput: High Throughput. Up to 75 WPH. Process Dependent .  Temperature: No heating function. N2 plasma can heat the substrate up to 170 C.  Gas Lines: Up to 5 gas lines with MFCs. Popular MFC Range: 2 SLM O2 and 1 SLM N2 .  Asher Rate: 0-0.1u/min. positive PR; >0.2u/min. negative PR  Uniformity: 25%. Clear all photoresist without uniformity requirement  Particulate: <0.05 /cm2 (0.03um or greater)  Damage: Low damage with Faraday Cage if necessary.  Selectivity: >1000:1  MTBF/MTTA/MTTR: 450 Hours/100 Hours/3.5 Hours or Better. 95% uptime  Company Introduction and Main Products ALLLWIN21 CORP. Introduction Equipment Key Features Allwin21 Corp. is the exclusive licensed manufacturer of AG Associates Heatpulse 610 Rapid Thermal Process tool. We are manufacturing the new AccuThermo AW Series Atmospheric and Vacuum Rapid Thermal Processors. Compared with traditional RTP systems, Allwin21’s AccuThermo AW RTPs have innovative software and more advanced real time temperature control technologies to achieve the BEST rapid thermal processing performance (repeatability, uniformity, and stability) with decades of research directly applicable to ours. We focus on extending product lifecycle, providing solutions, and engineering enhancements to many production proven semiconductor process equipment most directly related to III-V processing. These semiconductor equipment ha e een used in production and D since the 0 s hey ha e pro en processes and research. Allwin21 Corp. can customize these systems with All in2 s compara le inte rated process control system ith PC, solid robotic wafer transfer system, and new critical components. This is to achieve the goal of giving our customers a production edge, with right cost, and without having to worry about obsolete parts. Allwin21 Corp. was formed in 2000 with a focus on professionally providing Rapid Thermal Process, Plasma Asher Strip / Descum, Plasma Etch/RIE, Sputter Deposition and Metal Film Metrology high-tech semiconductor equipment, services and technical support in Semiconductor III-V, MEMS, Biomedical, Nanotechnology, Solar, Battery & LED industries. We endeavor to be a leader in our product lines. To achieve this, we have been providing unique innovative and cost-effective technical solutions, high quality equipment, and on time spare parts delivery worldwide. We have maintained a global presence that has grown and expanded into the major high-tech manufacturing areas of the world. We pride ourselves on developing and continuing lasting customer relationships. We understand that a timely responsive support and service are critical elements in semiconductor industries. Allwin21’s experienced engineer team is the best guarantee for high quality service and support. We provide on-site installation, training, maintenance, system optimization, retrofits, and/or customized upgrades Allwin21 Overview What sets us apart from the competition… 1) Exclusive licensed manufacturer of Heatpulse 610 of AG Associates. 2) Advanced Allwin21 Real Time PC Control Technology. 3) Focus on Production-Proven process technology. 4) Integrated 3-axis solid robotic wafer transfer technology. 5) Experienced local engineer support. 6) Products made in U.S.A Plasma Asher, Plasma Descum, Dry Clean, Semiconductor Equipment, Used Semiconductor Equipment, Semiconductor Process Equipment, atri 0 , atri 20 , atri 303, atri 403, atri 0 , atri 04, atri 02, atri 0 , atri 0 Plasma Asher, Plasma Descum, Dry Clean, Semiconductor Equipment, Used Semiconductor Equipment, Semiconductor Process Equipment, Branson/IPC 2000, Branson/IPC 3000, Branson/IPC 4000, Barrel Asher, Barrel Etch, Barrel Etcher Plasma Asher, Plasma Descum, Dry Clean, Semiconductor Equipment, Used Semiconductor Equipment, Semiconductor Process Equipment, asonics Aura 000, asonics Aura 2000, asonics Aura 3000, asonics 3 0, asonics Aura 30 0 Plasma Etcher, Please Etchin , Dry Etchin , Dry Clean, Semiconductor Equipment, Used Semiconductor Equipment, Semiconductor Process Equipment, e al 0 e, e al 03e, e al 0 e , e al Plasma Etcher, Please Etchin , Dry Etchin , Dry Clean, Semiconductor Equipment, Used Semiconductor Equipment, Semiconductor Process Equipment, asonics AE 200 , icro a e Etcher, icro a e Plasma Etcher, icro a e Etch apid hermal Process, apid hermal Processin , apid hermal Anneal, apid hermal Annealin , apid hermal idation, apid hermal itride, A, P, , ,, Semiconductor Equipment, Used Semiconductor Equipment, Semiconductor Process Equipment, A 2 0, A 3 0, A 4 0, A 0, A 0I, A Associates, eatpulse 2 0, eatpulse 4 0, inipulse 3 0, eatpulse 0, eatpulse 0I, A eatpulse 4 0, A eatpulse 0, A eatpulse 2 0, A inipulse 3 0, eatpulse 4 00, eatpulse 4 0 , eatpulse 0 , eatpulse 00, Atmospheric apid hermal Process, acuum apid hermal Process, urnace, en, hermal urnace, hermal Process, hermal Processin 1) Rapid Thermal Process • AccuThermo AW 610M • AccuThermo AW 820M • AccuThermo AW 820V • AccuThermo AW820R 2) Sputter Deposition • AccuSputter AW 4450 3) Plasma Asher Descum • AW-105R • AW-1008 • AW-B3000 4) Plasma Etch/RIE • AW-901eR • AW-903eR • AW-2001R 5) Upgraded Kit for: • Heatpulse 210,310,410,610 • Matrix X0X • Tegal 90Xe • Gasonics Aura 1000/2000LL/3000/3010 • Gasonics AE 2001/2000LL • Gasonics L3510/L3500 • Perkin-Elmer 24XX,4XXX Sputter • MRC 6XX, 9XX Sputer • TES 6XX,9XX Sputter • Branson/IPC 3000/2000/4000 • Lam AutoEtch 490/590/69 • Lam Rainbow 4XXX Series 6) Sheet Resistance Measurement • AWgage-150 • AWgage-200 Tel.: 408-778-7788 E-mail: sales@allwin21.com Website: www.allwin21.com All specification and information here are subject to change without notice and can not be used for purchase and facility plan. Address:220 Cochrane Circle, Morgan Hill,CA95037, U.S.A.
  • 2. Metal Film Metrology ALLLWIN21 CORP. AWgage-150/200 Introduction AWgage-150/200 measure sheet resistance in ohms per square or milliohms per square. If specific resistivity is known, the thickness of the deposited film layer can be computed from the sheet resistance. The choice of measurement data is easily get in the software. AWgage-150 can accommodate 150mm (6") wafers as well as the standard 2", 3",4", 5" wafers without any hardware change. AWgage-200 can accommodate 200mm (8") wafers as well as the standard 5" , 6" wafers without any hardware change. AWgage-150/200 Key Features 30 years proven Eddy Sheet Resistance Measurement technology. Non-contact Sheet Resistance Measurement. 1mΩ/square to 19,990Ω/square sheet resistance measurement range. 100Å to 270kÅ Metal Film Thickness range. Touch Screen Monitor GUI and PC w/ Advanced Allwin21 software. Wafer carriage travel programmed with internal encoder step motor , without encoder disk. Consistent wafer-to-wafer process cycle repeatability. Small footprint and energy efficient. Made in U.S.A. AWgage-150/200 Specifications • Perform odd number of site tests: 1 to 9 points • Highly Conductive or Metal Sheet Resistance 1 to 1,999 mΩ/square 1 to 1,999 Ω/square Or 10 to 19,990 Ω/square • Highly Conductive or Metal Film Thickness Minimum: 100 Ångström Maximum: Proportional to resistivity. Maximum for a resistivity of 2.7 µΩ-cm is 270 k Å (27 µm) • Sheet Resistance Repeatability Total repeatability is the standard deviation (σ) percent of mean value(X),1 count. Range s/X (±%) 1 to 100 mΩ/sq; Ω/sq 1 100 to 500 ΩW/sq; Ω/sq 2 500 to 1000 mΩ/sq; Ω/sq 4 1000 to 1,999 mΩ/sq; Ω/sq 6 1,999 to 5,000 Ω/sq Consult Factory 5000 to 10,000 Ω/sq Consult Factory 10,000 to 15,000 Ω/sq Consult Factory Introduction AWgage-150/200 Configuration  Main Frame  Wafer Carriage (2”-6” or 5”-8 )  Measurement Head  RF Tank Circuit board  Pentium® class computer board  Main control board  Motor control board.  Two USB Ports  Two Extra DB9 Ports  15–inch touch screen GUI  Allwin21 Corp proprietary software package.  Mouse & keyboard .  USB Flash Drive with AW Software backup.  CE Certification (Optional) Tel.: 408-778-7788 E-mail: sales@allwin21.com Website: www.allwin21.com All specification and information here are subject to change without notice and can not be used for purchase and facility plan. All used equipment trademarks belong to the OEM. Address:220 Cochrane Circle, Morgan Hill,CA95037 RFQ for Fast Free Quotation
  • 3. Sheet Resistance Measurement ALLLWIN21 CORP. AWgage-150/200 Software Key Features The AWgage-150/200 system is controlled by menu commands from the control software. This software allows a great deal of flexibility and control of the Allwin21 system. The AWgage-150/200 control software features the following: • Automated calibration of all subsystems from within the control software. This allows faster and easier calibration, leading to enhanced process results. The AWgage allows calibration of the ohm and milliohm measurements within the software for maximum performance and accuracy. This provides a much easier and faster method to calibrate the instrument than by adjusting pots on the back of the traditional Sheet Resistance Measurement Instrument. • The SOFTWARE can compensate for where the flat is on the carriage to locate the test points. • It features a recipe editor to create and edit recipes to fully automate the processing of wafers on the Allwin21 system. • Validation of the recipe so improper points will be revealed. • Storage of multiple recipes, process data and calibration files so that process and calibration results can be maintained and compared over time. • Passwords provide security for the system, recipe editing, diagnostics, calibration and setup functions. • Simple and easy to use menu screens which allow an automatic cycle to be easily defined and executed. • Troubleshooting features which allow engineers and service personnel to activate individual subassemblies and functions. AWgage-150 Facilities Requirements • Instrument needs to be on a hard/solid surface. • The room temperature should be close to 23° C for the greatest measurement accuracy. • Avoid environments with high concentrations of particulates, especially abrasives such as glass and silicon dust. • Power : 50/60Hz, Single Phase, 110/220VAC, 2 Amps • Weight and Dimensions: 44 LBs ; 11 inch (W) X 18 inch (D) X 22 inch (H) AWgage-150/200 Measurement Processes • Turn on the power to the AWgage. Allow 30 minutes for warming up. • Select an existing recipe or create a new recipe. • When The carriage is in the loading position, place the wafer on the carriage between the four locator blocks. The wafer will be centered over the circular platform that rotates the wafer. • Manual Mode: Press the MAN/AUTO button, so the LED is off. Momentarily press the START/STANDBY button. The carriage will move the wafer under the measurement head to the first point in the measurement sequence. For multi-point measurements--press START/STANDBY once for each point in the measurement sequence. The wafer will be advanced to the next point. When the measurement sequence is complete the carriage will move to the right until the wafer is out from under the measurement head in the loading/unloading position. The wafer can be removed from the carriage after it has reached this position. • Automatic Mode: Press the MAN/AUTO button on the AWgage control panel until the LED comes on. Press the START/STANDBY button. The entire measurement sequence will be performed without further operator intervention. When the sequence is complete, the wafer will be moved to the unloading position. • PC Screen Mode: Press the “Start Test” button at the Process Screens (for Engineer or Production) to test the wafer that is on the wafer carriage, using the selected recipe. The entire measurement sequence will be performed without further operator intervention. When the sequence is complete, the wafer will be moved to the unloading position. • All data measurements are recorded in the computer for later retrieval, inspection and, if desired, a print-out of the measured points can be printed on an external printer. Recipe Editor Start Test Testing Data Tel.: 408-778-7788 E-mail: sales@allwin21.com Website: www.allwin21.com All specification and information here are subject to change without notice and can not be used for purchase and facility plan. All used equipment trademarks belong to the OEM. Address:220 Cochrane Circle, Morgan Hill,CA95037 M a t r i x 1 0 5 , M a t r i x 2 0 5 , M a t r i x 3 0 3 , M a t r i x 4 0 3 , M a t r i x 1 0 6 , M a t r i x 1 0 4 , M a t r i x 1 0 2 , M a t r i x 1 0 1 , M a t r i x 1 0 , S y s t e m O n e S t r i p p e r , M o d e l 1 0 5 , S y s t e m O n e E t c h e r , m o d e l 3 0 3 , m o d e l 4 0 3 , M a t r i x 1 1 0 7 , B r a n s o n / I P C 2 0 0 0 , B r a n s o n / I P C 3 0 0 0 , B r a n s o n / I P C 4 0 0 0 , B a r r e l A s h e r , B a r r e l E t c h , B a r r e l E t c h e r , G a s o n i c s A u r a 1 0 0 0 , G a s o n i c s A u r a 2 0 0 0 , G a s o n i c s A u r a 3 0 0 0 , G a s o n i c s L 3 5 1 0 , G a s o n i c s A u r a 3 0 1 0 , P l a s m a E t c h e r , P l a s m a E t c h i n g , D r y E t c h i n g , D r y C l e a n , G a s o n i c s A E 2 0 0 1 , G a s o n i c s A E 2 0 0 0 L L , P l a s m a A s h e r E q u i p m e n t , p l a s m a D e s c u m e q u i p m e n t , D r y a s h e r e q u i p m e n t , D r y c l e a n e q u i p m e n t , d r y d e s c u m e q u i p m e n t , s e m i c o n d u c t o r p r o c e s s e q u i p m e n t , s e m i c o n d u c t o r e q u i p m e n t , u s e d s e m i c o n d u c t o r e q u i p m e n t , f r o n t e n d e q u i p m e n t , 等 离 子 去 胶 机 , 自 动 去 胶 机 , 手 动 去 胶 机 , 干 法 去 胶 机 , 湿 法 去 胶 机 , 等 離 子 去 膠 機 , 自 動 去 膠 機 , 手 動 去 膠 機 , 乾 式 去 膠 機 , 濕 式 去 膠 機 , 半 导 体 设 备 , 半 导 体 旧 设 备 , 半 导 体 中 古 设 备 , 半 导 体 前 道 工 艺 设 备 , 半 导 体 后 道 工 艺 设 备 , 半 导 体 前 道 设 备 , 半 导 体 后 道 设 备 , 半 導 體 設 備 , 半 導 體 舊 設 備 , 半 導 體 中 古 設 備 , 半 導 體 前 道 製 程 設 備 , 半 導 體 後 道 製 程 設 備 , 半 導 體 前 道 設 備 , 半 導 體 後 道 設 備 A G 2 1 0 , A G 3 1 0 , A G 4 1 0 , A G 6 1 0 , A G 6 1 0 I , A G A s s o c i a t e s , H e a t p u l s e 2 1 0 , H e a t p u l s e 4 1 0 , M i n i p u l s e 3 1 0 , H e a t p u l s e 6 1 0 , H e a t p u l s e 6 1 0 I , A G H e a t p u l s e 4 1 0 , A G H e a t p u l s e 6 1 0 , A G H e a t p u l s e 2 1 0 , A G M i n i p u l s e 3 1 0 , 4 1 0 0 , 4 1 0 0 S 4 1 0 8 , 8 1 0 8 , A t m o s p h e r i c R a p i d T h e r m a l P r o c e s s , V a c u u m R a p i d T h e r m a l P r o c e s s , F u r n a c e , O v e n , T h e r m a l F u r n a c e , T h e r m a l P r o c e s s , T h e r m a l P r o c e s s i n g , J I P E L E C , a g 2 1 4 6 , J e t C l i p , J e t S t a r , A S T S H S 2 0 0 0 , A S T S T E A G 2 8 0 0 , s s i n t e g r a t i o n , R a p i d T h e r m a l O x i d e , J e t F i r s t , M a t t s o n , a n n e a l s y s , h e a t p u l s e , a g 2 1 4 6 , K o y o T h e r m o S y s t e m s , A S T S T E A G - M A T T S O N 2 8 0 0 , S T E A G - M A T T S O N 2 9 0 0 , S T E A G - M A T T S O N 3 0 0 0 , h e a t p u l s e , S o l a r i s , E c l i p s e , m o d u l a r p r o , R L A - 1 0 0 0 , A G H e a t p u l s e , r a p i d t h e r m a l p r o c e s s o r , S t e a g A S T S H S 2 0 0 0 , S o l a r i s 7 5 , S o l a r i s 7 5 , S T E A G E l e c t r o n i c S y s t e m s , e n g - s o l , A n n e a l s y s , R L A - 3 0 0 0 , E n g i n e e r i n g S o l u t i o n s , S o l a r i s 1 5 0 , R a p i d T h e r m a l A n n e a l e r , A S - M a s t e r , m o d u l a r p r o , R T O , M o d u l a r P r o c e s s T e c h n o l o g y , S o l a r i s 1 5 0 , A S - O n e , A S - M i c r o , A D D A X , J e t F i r s t , J e t L i g h t , J e t S t a r , M P T - 6 0 0 S , M P T - 8 0 0 S , M P T - 6 0 0 X P , M P T - 8 0 0 X P , M P T - 3 0 0 0 , J i p e l e c J e t f i r s t 1 5 0 , J i p e l e c J e t f i r s t 2 0 0 , J E T F I R S T 1 0 0 , A n n e a l S y s A S - O n e , R T P - 3 0 0 0 , U L V A C , U l v a c T e c h n o l o g y M I L A 3 0 0 0 , R a p i d T h e r m a l A n n e a l i n g , U L V A C R T A - 2 0 0 0 , U L V A C R T A - 4 0 0 0 , U L V A C R T A - 6 0 0 0 , U L V A C R T A - 8 0 0 0 , U L V A C R T A - 1 2 0 0 0 , E a s y T u b e ® 3 0 0 0 E X T , C V D E q u i p m e n t C o r p o r a t i o n , D r . 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3 0 0 0 , 8 i n c h , L o w - C o s t M i n i B a t c h , V F - 1 0 0 0 , S m a l l P r o d u c t i o n a n d R & D , V F S - 4 0 0 0 , L a r g e B o r e V e r t i c a l F u r n a c e , K o y o T h e r m o S y s t e m s C o . , L t d . , M o d e l 2 0 0 S e r i e s H o r i z o n t a l F u r n a c e s f o r M a s s P r o d u c t i o n a n d E x p e r i m e n t s , M o d e l 2 0 6 A H o r i z o n t a l F u r n a c e f o r P V P r o d u c t i o n , M o d e l 2 0 6 A H o r i z o n t a l F u r n a c e f o r P V , P r o d u c t i o n , R L A - 3 1 0 0 L a m p A n n e a l i n g S y s t e m f o r R a p i d T h e r m a l P r o c e s s i n g , R L A - 1 2 0 0 L a m p A n n e a l i n g S y s t e m f o r R a p i d T h e r m a l P r o c e s s i n g , R L A - 1 2 0 0 L a m p A n n e a l i n g S y s t e m f o r R a p i d T h e r m a l P r o c e s s i n g , S O 2 - 1 2 - F H e a t e d - a i r C i r c u l a t i n g T y p e C l e a n O v e n f o r 3 0 0 - m m W a f e r s , C L H S e r i e s H i g h - T e m p e r a t u r e C l e a n O v e n s , C L H S e r i e s H i g h - T e m p e r a t u r e C l e a n O v e n s , V F S - 4 0 0 0 L a r g e B o r e V e r t i c a l F u r n a c e , V F - 5 3 0 0 H L P A c t i v a t i o n A n n e a l i n g F u r n a c e , V F - 5 3 0 0 H V e r t i c a l F u r n a c e f o r G a t e I n s u l a t i n g F i l m F o r m a t i o n , V F - 5 3 0 0 H V e r t i c a l F u r n a c e f o r G a t e I n s u l a t i n g F i l m F o r m a t i o n , R L A - 4 1 0 6 - V L a m p A n n e a l i n g S y s t e m f o r C o n t a c t A n n e a l i n g , R L A - 4 1 0 6 - V L a m p A n n e a l i n g S y s t e m f o r C o n t a c t A n n e a l i n g , V F - 3 0 0 0 H L P A c t i v a t i o n A n n e a l i n g F u r n a c e , V F - 3 0 0 0 H L P A c t i v a t i o n A n n e a l i n g F u r n a c e , V F - 3 0 0 0 H V e r t i c a l F u r n a c e f o r G a t e I n s u l a t i n g F i l m F o r m a t i o n , V F - 3 0 0 0 H V e r t i c a l F u r n a c e f o r G a t e I n s u l a t i n g F i l m F o r m a t i o n , R L A - 3 1 0 0 - V L a m p A n n e a l i n g S y s t e m f o r C o n t a c t A n n e a l i n g , R L A - 3 1 0 0 - V L a m p A n n e a l i n g S y s t e m f o r C o n t a c t A n n e a l i n g , R a p i d t e m p e r a t u r e r i s e a n n e a l i n g f u r n a c e R T P _ T a b l e , R T P _ T a b l e t y p e r a p i d t e m p e r a t u r e r i s e a n n e a l i n g f u r n a c e , R a p i d t e m p e r a t u r e r i s e a n n e a l i n g f u r n a c e R T P _ S A , R T P , s e m i - a u t o m a t i c r a p i d t e m p e r a t u r e r i s e a n n e a l i n g f u r n a c e , R a p i d t e m p e r a t u r e r i s e a n n e a l i n g f u r n a c e , R T P _ A u t o , a u t o m a t i c r a p i d t e m p e r a t u r e r i s e a n n e a l i n g f u r n a c e , R T P 6 0 0 V , R T P 6 0 0 Z , R T P 5 0 0 Z , R T P 5 0 0 V , R T P 5 0 0 S V , 快 速 退 火 炉 , 北 京 东 之 星 应 用 物 理 研 究 所 , 快 速 升 溫 退 火 爐 , e s t a r l a b s , G l o v e b o x + P V D , 2 D m a t e r i a l C V D , L P C V D & F u r n a c e , V a c u u m S i n t e r i n g F u r n a c e , R T P , P l a s m a D o p i n g ( P D S ) , A S H E R , W e t b e n c h , C r y s t a l S i s o l a r c e l l , R a p i d T h e r m a l P r o c e s s , M o d u l a r P r o c e s s T e c h n o l o g y , R a p i d T h e r m a l P r o c e s s i n g , R a p i d T h e r m a l A n n e a l , R a p i d T h e r m a l A n n e a l i n g , R a p i d T h e r m a l O x i d a t i o n , R a p i d T h e r m a l N i t r i d e , R T A , R T P , R T O , R T N , 快 速 退 火 炉 , 速 升 溫 退 火 爐 , 保 护 气 氛 快 速 退 火 炉 , 保 護 氣 氛 快 速 退 火 爐 , 快 速 退 火 爐 , 红 外 灯 加 热 , 红 外 灯 快 速 退 火 , 卤 素 灯 加 热 , 高 温 计 , 红 外 高 温 计 , 紅 外 線 燈 加 熱 , 紅 外 線 燈 快 速 退 火 , 鹵 素 燈 加 熱 , 高 溫 計 , 紅 外 線 高 溫 計 , 半 导 体 设 备 , 半 导 体 旧 设 备 , 半 导 体 中 古 设 备 , 半 导 体 前 道 工 艺 设 备 , 半 导 体 后 道 工 艺 设 备 , 半 导 体 前 道 设 备 , 半 导 体 后 道 设 备 , 半 導 體 設 備 , 半 導 體 舊 設 備 , 半 導 體 中 古 設 備 , 半 導 體 前 道 製 程 設 備 , 半 導 體 後 道 製 程 設 備 , 半 導 體 前 道 設 備 , 半 導 體 後 道 設 備 T e g a l 9 0 1 e , T e g a l 9 0 3 e , T e g a l 9 0 1 e T T W , T e g a l 9 1 5 , T e g a l 7 0 1 , T e g a l 7 0 3 , T e g a l 8 0 1 , T e g a l 8 0 3 , T e g a l 9 8 1 e , T e g a l 9 0 3 e , T e g a l 9 1 5 , T e g a l 9 6 5 , T e g a l 4 0 5 , T e g a l 4 0 1 , L a m A u t o E t c h 4 9 0 , L a m A u t o E t c h 5 9 0 , L a m A u t o E t c h 6 9 0 , L a m A u t o E t c h 7 9 0 , L a m R a i n b o w 4 4 0 0 , L a m R a i n b o w 4 4 2 0 , L a m R a i n b o w 4 4 2 8 , L a m R a i n b o w 4 5 0 0 , L a m R a i n b o w 4 5 2 0 , L a m R a i n b o w 4 5 2 8 , L a m R a i n b o w 4 6 0 0 , L a m R a i n b o w 4 6 2 0 , L a m R a i n b o w 4 6 2 8 , L a m R a i n b o w 4 7 0 0 , L a m R a i n b o w 4 7 2 0 , L a m R a i n b o w 4 7 2 8 , G a s o n i c s A E 2 0 0 1 , M i c r o w a v e E t c h e r , M i c r o w a v e P l a s m a E t c h e r , M i c r o w a v e E t c h , D o w n s t r e a m P l a s m a E t c h , P l a s m a E t c h e r , P l a s m a E t c h i n g , D r y E t c h i n g , D r y C l e a n , s e m i c o n d u c t o r p r o c e s s e q u i p m e n t , s e m i c o n d u c t o r e q u i p m e n t , u s e d s e m i c o n d u c t o r e q u i p m e n t , f r o n t e n d e q u i p m e n t , 等 离 子 刻 蚀 , 深 刻 蚀 , 各 向 同 性 , 各 向 异 性 , 等 离 子 清 洗 , 溅 射 台 , 蒸 发 台 , 磁 控 溅 射 台 , 直 流 电 源 溅 射 , 高 频 溅 射 , 自 动 刻 蚀 机 , 手 动 刻 蚀 机 , 干 法 刻 蚀 机 , 湿 法 刻 蚀 机 , 半 导 体 量 测 仪 器 , 半 导 体 量 测 设 备 , 等 離 子 蝕 刻 , 深 刻 蝕 , 各 向 同 性 , 各 向 異 性 , 等 離 子 清 洗 , 濺 射 台 , 蒸 發 台 , 磁 控 濺 射 台 , 直 流 電 源 濺 射 , 高 頻 濺 射 , 自 動 蝕 刻 機 , 手 動 蝕 刻 機 , 乾 法 蝕 刻 機 , 濕 蝕 刻 機 , Q u o r u m T e c h n o l o g i e s , M i n i Q S , T h e Q P l u s S e r i e s , M i n i Q S E n t r y - L e v e l C o a t e r , Q 1 5 0 V P l u s f o r u l t r a - f i n e c o a t i n g s i n h i g h v a c u u m a p p l i c a t i o n s , Q 1 5 0 R P l u s – R o t a r y P u m p e d C o a t e r , Q 1 5 0 T P l u s – T u r b o m o l e c u l a r p u m p e d c o a t e r , Q 1 5 0 G B T u r b o - P u m p e d S p u t t e r C o a t e r / C a r b o n C o a t e r f o r G l o v e B o x , Q 3 0 0 T T P l u s – t r i p l e t a r g e t s p u t t e r c o a t e r f o r s p e c i m e n s u p t o 2 0 0 m m d i a m e t e r , Q 3 0 0 T D P l u s – d u a l t a r g e t s e q u e n t i a l s p u t t e r i n g f o r s p e c i m e n s u p t o 1 5 0 m m d i a m e t e r , G l o Q u b e ® P l u s G l o w D i s c h a r g e S y s t e m f o r T E M G r i d s a n d s u r f a c e m o d i f i c a t i o n , M i n i Q G D S i n g l e C h a m b e r G l o w D i s c h a r g e S y s t e m S w i t z e r l a n d , E P F L , E S I 3 5 1 1 D o w n s t r e a m P l a s m a A s h e r , P l a s m a E t c h , I n c , P E - A v e n g e r , P E - 2 5 , P E - 5 0 , P E - 5 0 X L , P E - 7 5 , P E - 7 5 X L , P E - 2 5 V e n u s , P E - 5 0 V e n u s , P E - 5 0 X L V e n u s , P E - 7 5 V e n u s , P E - 7 5 X L V e n u s , P E - 1 0 0 , P E - 2 0 0 , H i g h V o l u m e P l a s m a S y s t e m s B T - 1 , B T - T u m b l e r , T T - 1 , P E - 2 0 0 0 R , P E - 5 0 0 0 , M K - I I , M a g n a P I E S c i e n t i f i c L L C , T a b l e t o p P l a s m a C l e a n e r , E t c h e r a n d A s h e r T e r g e o T e r g e o - P l u s T e r g e o - P r o T e r g e o - E M T E M / S E M p l a s m a c l e a n e r D o w n s t r e a m P l a s m a C l e a n e r s E M - K L E E N S e m i - K L E E N Q u a r t z S e m i - K L E E N S a p p h i r e S E M I - K L E E N U H V T E M S p e c i m e n H o l d e r S t o r a g e T E M C U B E G a s M i x e r s I o n S o u r c e U V P r e p P l a s m a P r e p I I I P l a s m a C l e a n e r f o r T E M H o l d e r s P l a s m a P r e p I I I P l a s m a P r e p X P l a s m a P r e p R I E P l a s m a P r e p J r . S P I P l a s m a P r e p I I R e p l a c e m e n t P a r t s P l a s m a P r e p I I I R e p l a c e m e n t P a r t s K a m m r a t h & W e i s s C r i t i c a l P o i n t D r y e r P l a s m a C l e a n e r s , E t c h e r s a n d A s h e r s B a c k s c a t t e r D e t e c t o r s C o a t e r s I o n M i l l A c c e s s o r i e s L i q u i d N i t r o g e n D e w a r s S t e r e o M i c r o s c o p e s S c i e n t e c h B a l a n c e s C e n t r i f u g e D i g i t a l C a m e r a s B e n c h m a r k P r o d u c t s D r y B a t h s H o t P l a t e s / S t i r r e r s M i x e r s S h a k e r s S t e r i l i z e r s U l t r a s o n i c C l e a n e r s P l a s m a E t c h e r , P l a s m a E t c h i n g , D r y E t c h i n g , D r y C l e a n K E M P l a s m a A s h e r S y s t e m . L a m b d a 3 0 0 0 I I E n v i r o , E N V I R O - 1 X a E N V I R O - 1 X a , 2 C E N V I R O - O p t i m a , L u m i n o u s N A , N A - 8 0 0 0 N A - 1 3 0 0 N A - 1 5 0 0 , M u l t i f i l m , N E - 5 5 0 E X a N E - 9 5 0 E X , A P I O S N E - 5 7 0 0 D e e p , O x i d e E t c h i n g , N L D - 5 7 0 E X a R I S E S y s t e m , R I S E S e r i e s , C l u s t e r S y s t e m s , S M E S e r i e s u G m n i S e r i e s , S R H S e r i e s U L D i S S e r i e s , S M V - 5 0 0 F R o l l - c o a t e r , S P W S e r i e s I n - l i n e S y s t e m s , S I V S e r i e s S D H - 4 5 5 0 L R & D , C S - 2 0 0 , 3 0 0 m m , E N T R O N - E X E N T R O N - E X 2 , E v a p o r a t i o n R o l l C o a t e r , E W S e r i e s R & D / P i l o t P r o d u c t i o n , E i - 5 I n - l i n e S y s t e m s , E i - H s e r i e s , S i P r o c e s s i n g , I M X - 3 5 0 0 S O P H I - 2 0 0 / 2 6 0 , S i C , I H - 8 6 0 , B r a z i n g F u r n a c e , F B S e r i e s F H H n s e r i e s , V a c u u m S i n t e r i n g , F S C S e r i e s V a c u u m , I n d u c t i o n M e l t i n g , F M I S e r i e s , V a c u u m H e a t T r e a t m e n t , F H B - 6 0 C F H V S e r i e s , S i n g l e - S u b s t r a t e , C C S e r i e s , C M E S e r i e s , I n - l i n e S y s t e m s , U L G L A Z E S e r i e s , L y o p h i l i z e r , D F B S e r i e s , M i c r o p o w d e r D r y , U P D - 4 0 0 D , F M S e r i e s , D F R S e r i e s , C e n t r i f u g a l T y p e , C E H - 4 0 0 B , U L V A C M g a g e 2 0 0 , M g a g e 3 0 0 , M - g a g e 2 0 0 , M - g a g e 3 0 0 , S h e e t R e s i s t a n t m e a s u r e m e n t , M e t r o l o g y , T e n c o r M - G a g e 3 0 0 , T e n c o r M - G a g e 2 0 0 , s h e e t r e s i s t a n c e , s h e e t r e s i s t a n c e M e a s u r e m e n t , S e m i c o n d u c t o r E q u i p m e n t , S e m i c o n d u c t o r m e t r o l o g y E q u i p m e n t , K L A - T e n c o r , T e n c o r , S o n o g - a g e 2 0 0 , S o n o - g a g e 3 0 0 , S o n o g a g e 2 0 0 , S o n o g a g e 3 0 0 , P e r k i n - E l m e r 4 4 0 0 , P e r k i n - E l m e r 4 4 1 0 , P e r k i n - E l m e r 4 4 5 0 , P e r k i n - E l m e r 4 4 8 0 , P e r k i n - E l m e r 2 4 0 0 , P e r k i n E l m e r 4 4 0 0 , P e r k i n E l m e r 4 4 1 0 , P e r k i n E l m e r 4 4 5 0 , P e r k i n E l m e r 4 4 8 0 , P e r k i n E l m e r 2 4 0 0 , S p u t t e r , M a g n e t r o n S p u t t e r , D i o d e S p u t t e r , D C S p u t t e r , R F S p u t t e r , D C M a g n e t r o n S p u t t e r , R F M a g n e t r o n S p u t t e r , C o - s p u t t e r , R e a c t i v e S p u t t e r , M R C , M R C 6 0 3 , M R C 9 0 3 , M R C 6 0 2 , M R C 9 0 2 , M R C 6 0 4 , M R C 9 0 4 , M R C 9 2 4 , P l a s m a E t c h , D r y C l e a n , B i a s F u n c t i o n , C a t h o d e , L o a d l o c k , D e g a s , S e m i c o n d u c t o r E q u i p m e n t , U s e d S e m i c o n d u c t o r E q u i p m e n t , S e m i c o n d u c t o r P r o c e s s E q u i p m e n t , , T h i n F i l m , M e t a l T h i n F i l m , T h i n F i l m D e p o s i t i o n , P V D , P h y s i c a l V a p o r D e p o s i t i o n , P V D C o a t i n g E q u i p m e n t , A p p l i e d M a t e r i a l s U L V A C O p t o r u n B u h l e r L e y b o l d O p t i c s S h i n c r o n V o n A r d e n n e E v a t e c V e e c o I n s t r u m e n t s H a n i l V a c u u m B O B S T S a t i s l o h I H I H a u z e r T e c h n o H o n g d a V a c u u m P l a t i t L u n g P i n e V a c u u m B e i j i n g P o w e r T e c h S K Y T e c h n o l o g y I m p a c t C o a t i n g s H C V A C D e n t o n V a c u u m Z H E N H U A M u s t a n g V a c u u m S y s t e m s K Y Z K , I H I H A U Z E R T E C H N O C O A T I N G B . V . , K o r v u s T e c h n o l o g y L t d , I n t l v a c T h i n F i l m , A j a i n t e r n a t i o n a l s p u t t e r i n g s y s t e m , K D F E l e c t r o n i c & V a c u u m S e r v i c e s I n c , N E X D E P P H Y S I C A L V A P O R D E P O S I T I O N , M a g n e t r o n S p u t t e r i n g , E - B e a m E v a p o r a t i o n , T h e r m a l E v a p o r a t i o n , I o n B e a m P r o c e s s i n g , A n g s t r o m E n g i n e e r i n g I n c , A M O D P H Y S I C A L V A P O R D E P O S I T I O N , E V O V A C P H Y S I C A L V A P O R D E P O S I T I O N , P l a s m a & I o n B e a m P r o c e s s i n g , N E B U L A C L U S T E R I N T E G R A T E D V A C U U M S Y S T E M , B O X C O A T E R P V D , L I N E A R S P U T T E R P V D , A J A S p u t t e r i n g A l t e r n a t i v e , T h i n - F i l m P h y s i c a l V a p o r D e p o s i t i o n E q u i p m e n t , P r o c e s s M a t e r i a l s , S p u t t e r i n g T a r g e t s , B a c k i n g P l a t e s , B o n d i n g , P V D a n d S p u t t e r i n g , K D F I n - L i n e S o l u t i o n s , K D F S p u t t e r i n g T e c h n o l o g y , S p u t t e r i n g P r o d u c t s , 6 0 0 i S e r i e s S p u t t e r i n g S y s t e m , 7 4 4 i S p u t t e r i n g S y s t e m , 8 4 4 i S p u t t e r i n g S y s t e m , 9 0 0 i S e r i e s S p u t t e r i n g S y s t e m , 9 7 4 i S e r i e s S p u t t e r i n g S y s t e m , O p u s R o b o t i c C 2 C L o a d i n g S y s t e m , P r e - O w n e d P r o d u c t s , C i C l u s t e r T o o l , O r i o n S e r i e s , A J A ’ s S t i l e t t o - O ( H V ) , A 3 0 0 - X P - O ( U H V ) , O R I O N 8 - Ⅱ C L U S T E R F L A N G E , O R I O N 8 - Ⅲ C L U S T E R F L A N G E , O R I O N 8 - Ⅱ T C L U S T E R F L A N G E , C U S T O M O R I O N C L U S T E R F L A N G E , A T C F l a g s h i p S e r i e s S p u t t e r i n g S y s t e m s , B a t c h S e r i e s S p u t t e r i n g S y s t e m s , A T C - B S e r i e s B a t c h C o a t i n g S y s t e m s , A T C - E ( E - B e a m E v a p o r a t i o n ) , A T C - T ( T h e r m a l E v a p o r a t i o n ) S y s t e m s , A T C - E U H V S e r i e s , A T C - 2 0 3 6 H V S e r i e s , A T C - T S e r i e s , O r i o n I o n M i l l i n g S y s t e m s I M S , 2 0 3 6 I o n M i l l i n g S y s t e m s I M S , H y b r i d C o a t i n g S y s t e m s , A T C - 2 2 0 0 - H Y U H V H y b r i d D e p o s i t i o n S y s t e m , A T C 1 8 0 0 - H Y , A T C - 2 0 3 6 , A T C 2 2 0 0 - H Y , M u l t i - C h a m b e r C o a t i n g S y s t e m s , A T C - M C M u l t i - C h a m b e r M a g n e t r o n S p u t t e r i n g S y s t e m , D u a l O R I O N U H V w i t h C o m m o n L o a d - L o c k , A T C - M C - H Y M u l t i - C h a m b e r H y b r i d D e p o s i t i o n T o o l , U H V T r a n s f e r T u b e , G l o v e b o x I n t e r f a c e , D u a l A T C / O r i o n S e r i e s U H V S p u t t e r i n g S y s t e m , A T C U H V D u a l S p u t t e r i n g & E l e c t r o n B e a m E v a p o r a t i o n C h a m b e r , S u b s t r a t e H o l d e r s , S p u t t e r i n g S o u r c e s , P o w e r S u p p l i e s , M a t e r i a l s , S u b s t r a t e H o l d e r s c o o l i n g , T i l t i n g , H e a t i n g , O x i d e s , B o r i d e s , N i t r i d e s , S e l e n i d e s , F l u o r i d e s , S i l i c i d e s , S u l f i d e s , C a r b i d e s , A l l o y s , P u r e M e t a l s , N o n - M e t a l s , H i P I M S G e n e r a t o r s , D C X P P u l s e d D C , A p p l i e d M a t e r i a l s I n c . B ü h l e r G r o u p L e y b o l d G m b H S a t i s l o h A G V e e c o I n s t r u m e n t s I n c . O e r l i k o n B a l z e r s U L V A C I n c . H a u z e r T e c h n o C o a t i n g B . V . M u s t a n g V a c u u m S y s t e m s A n g s t r o m E n g i n e e r i n g I n c . P V D P r o d u c t s I n c . D e n t o n V a c u u m L L C A J A I n t e r n a t i o n a l I n c . S e m i c o r e E q u i p m e n t I n c . A d v a n c e d E n e r g y I n d u s t r i e s I n c . G e n e r a t o r s , D C X S - 4 D C G e n e r a t o r s , R F G e n e r a t o r s , M a t c h i n g N e t w o r k s , N A N O C H R O M E T H I N F I L M D E P O S I T I O N , N A N O Q U E S T I O N B E A M E T C H , N A N O Q U E S T I O N B E A M S P U T T E R D E P O S I T I O N , I C A R U S I N D I U M D E P O S I T I O N , E L E C T R A U V S P U T T E R I N G , A E G I S D I A M O N D L I K E C A R B O N , M I D A S T M F I B E R M E T A L I Z A T I O N , T V A C S P A C E S I M U L A T I O N , N A N O Q U E S T P I C O , N A N O Q U E S T I , N A N O Q U E S T I I , N A N O Q U E S T I I I / I V , N A N O Q U E S T I I B S D , N A N O Q U E S T I I B S D C O M B O , N A N O Q U E S T I I I B S D , N A N O Q U E S T I I I I B S D , N A N O C H R O M E I V I B S D , H a u z e r b a t c h c o a t i n g s y s t e m s , S i n g u l u s , s i n g u l a r , p e c v d , P l a s m a E n h a n c e d C h e m i c a l V a p o r D e p o s i t i o n , S e m i c o n d u c t o r E q u i p m e n t , U s e d S e m i c o n d u c t o r E q u i p m e n t , S e m i c o n d u c t o r P r o c e s s E q u i p m e n t F u r n a c e , M R L , M R L 4 S t a c k , S e m i c o n d u c t o r E q u i p m e n t , U s e d S e m i c o n d u c t o r E q u i p m e n t , S e m i c o n d u c t o r P r o c e s s E q u i p m e n t E a t o n R e l i a n c e 8 5 0 , S O L A R I S 1 0 0 , S O L A R I S 2 0 0 , S O L A R I S 1 5 0 , S O L A R I S 1 5 0 U V , s u r f a c e s c i e n c e i n t e g r a t i o n , s s i - r t p , e c m - u s a , J i p e l e c J e t L i g h t , J i p e l e c J e t F i r s t 1 0 0 , J i p e l e c J e t F i r s t 2 0 0 , J i p e l e c J e t F i r s t 3 0 0 , J i p e l e c J e t S t a r , A n n e a l s y s A S - M i c r o , A n n e a l s y s A S - 1 5 0 , A n n e a l s y s A S - 1 0 0 , A n n e a l s y s A S - O n e , A n n e a l s y s A S - M a s t e r , A n n e a l s y s A S - P r e m i u m , A n n e a l s y s Z e n i t h - 1 0 0 , u n i t e m p , V a c u u m S o l d e r S y s t e m , V S S - 4 5 0 - 3 0 0 , R T P - 1 0 0 , R T P - 1 0 0 - E P , R T P - 1 0 0 - H V , R T P - 1 0 0 - H V - E P , R T P - 1 5 0 , R T P - 1 5 0 - E P , R T P - 1 5 0 - H V , R T P - 2 0 0 , V P O - 3 0 0 , V P O - 3 0 0 - H V , h o t p l a t e H P - 2 2 0 , h o t p l a t e , V S S - 4 5 0 - 3 0 0 , R S O - 2 0 0 , R S O - 3 0 0 , R S S - 2 1 0 - S , R S S - 1 6 0 - S , R S S - 1 1 0 - S , U L V A C , R e a l R T P - 1 0 0 , R e a l R T P - 1 5 0 , R e a l R T P - M i n i , S J H i g h T e c h n o l o g y C o m p a n y , U L T E C H , M a t t s o n , H e l i o s X P , H e l i o s C 2 0 0 , M i l l i o s , A s p e n I I I , A s p e n I I , A l p i n e , P l a s m a A s h e r , D e s c u m , C l e a n , N o v y k a , S e l e c t i v e E t c h S y s t e m s , S u r f a c e T r e a t m e n t S y s t e m s , I n t e r f a c e T r e a t m e n t S y s t e m s , p a r a d i g m E , i n d u c t i v e l y c o u p l e d p l a s m a , I C P , S U P R E M A , p l a s m a d r y s t r i p , D r y S t r i p , P l a s m a E T C H , P l a s m a E T C H , S u r f a c e T r e a t m e n t , U l t r a - S e l e c t i v e M a t e r i a l s R e m o v a l , R a p i d T h e r m a l P r o c e s s i n g , M i l l i s e c o n d A n n e a l , S t e a g - A S T R T A , S t e a g , M a t t s o n - S t e a g , S T E A G 1 0 0 C S , S T E A G E l e c t r o n i c S y s t e m s , r a p i d t h e r m a l p r o c e s s i n g , c l e a n p r o c e s s , C V D , p o s t - C M P - c l e a n i n g , A S T 3 0 0 0 , S T E A M p u l s e , h i g h - t e m p e r a t u r e t h i n a n d t h i c k o x i d e s , p o s t - d i e l e c t r i c d e p o s i t i o n a n n e a l s , s e l e c t i v e o x i d a t i o n , l o w - t e m p e r a t u r e c o p p e r a n n e a l s , P o s e i d o n D o u b l e T a n k T o o l , D T T , r i t i c a l c l e a n i n g , p r e - g a t e o x i d a t i o n , p r e - e p i , p r e - f u r n a c e , R T P , S T E A G A S T E l e k t r o n i k , S T E A G / M A T T S O N / A S T 1 0 0 , S T E A G / M A T T S O N / A S T 2 8 0 0 , S T E A G / M A T T S O N / A S T 2 8 0 0 E , , S T E A G / M A T T S O N / A S T 2 9 0 0 , S p a r e P a r t s , S T E A G / M A T T S O N / A S T 3 0 0 0 , S T E A G / M A T T S O N / A S T 3 0 0 0 p l u s , S T E A G / M A T T S O N / A S T A t o m s , S T E A G / M A T T S O N / A S T H e l i o s , S T E A G / M A T T S O N / A S T H e l i o s 6 0 0 0 , S T E A G / M A T T S O N / A S T S H S 1 0 M A , S T E A G / M A T T S O N / A S T S H S 1 0 M A , S T E A G / M A T T S O N / A S T S H S 2 0 0 0 , S T E A G / M A T T S O N / A S T S H S 2 8 0 0 , S T E A G / M A T T S O N / A S T , S T E A G / M A T T S O N / A S T S H S 2 8 0 0 E , S T E A G / M A T T S O N / A S T S H S 3 0 0 0 , A S T S t e a g M a t t s o n S H S 1 0 0 0 V A C , R T P , R a p i d T h e r m a l P r o c e s s o r , J T E K T T h e r m o S y s t e m s , C r y s t e c T e c h n o l o g y , R T P / R T A s y s t e m R L A 1 2 0 0 , R T P / R T A s y s t e m R L A 3 1 0 0 , R T P / R T A s y s t e m R L A 3 3 0 0 , U n i t y 2 9 0 0 , 0 . 1 8 - m i c r o n t h e r m a l p r o c e s s i n g s y s t e m , Z h e n g z h o u K J T e c h n o l o g y , H i g h V a c u u m R T P - R a p i d A n n e a l i n g F u r n a c e , R T P i n f r a r e d t u b e h e a t i n g t u b e f u r n a c e , R T P r a p i d a n n e a l i n g f u r n a c e , C u s t o m R T P t u b e f u r n a c e , 1 2 0 0 ℃ R T P A n n e a l i n g T u b e F u r n a c e w i t h S l i d e - a b l e Q u a r t z T u b e , T o u c h s c r e e n R T P r a p i d a n n e a l i n g f u r n a c e , 9 0 0 ℃ T w o Z o n e I R - H e a t i n g R T P T u b e F u r n a c e , 9 0 0 ℃ R T P t u b e f u r n a c e w i t h m u l t i - c h a n n e l p r o t o n f l o w m e t e r c o n t r o l s y s t e m , 1 2 0 0 ℃ C r u c i b l e M o v a b l e T u b e F u r n a c e , C o m p a c t A t m o s p h e r e C o n t r o l l e d R T P F u r n a c e w i t h 4 " I D Q u a r t z T u b e u p t o 1 1 0 0º C , 9 0 0 ℃ M a x S l i d e a b l e R T P T u b e F u r n a c e , M A T T S O N A S T S t e a g 2 8 0 0 , M A T T S O N A S T S t e a g 2 9 0 0 , M A T T S O N A S T S t e a g 3 0 0 0 , S t e a g R T P S y s t e m s , S t e a g H e a t p u l s e 6 1 0 , A p p l i e d M a t e r i a l s , C e n t u r a D P N H D , P r o d u c e r P y r a A n n e a l , V a n t a g e A s t r a D S A , V a n t a g e R a d O x R T P , V a n t a g e R a d i a n c e P l u s R T P , S t e a m o x i d a t i o n , A p p l i e d M a t e r i a l s C e n t u r a R T P , P r o d u c e r P y r a A n n e a l , r a d i c a l o x i d a t i o n , m i l l i s e c o n d a n n e a l i n g , m o d e l - b a s e d c o n t r o l l e r , V a n t a g e V u l c a n R T P , S E M A T E C H M e t h o d o l o g i e s , 0 . 2 5 m T e c h n o l o g y T h e r m a l A p p l i c a t i o n s , f i r s t n a n o , E a s y T u b e 2 0 0 0 , E a s y T u b e 3 0 0 0 , E a s y T u b e 3 0 0 0 E X T , E a s y T u b e 1 0 1 , E a s y T u b e 6 0 0 0 , E a s y T u b e 6 3 0 8 , A p p l i e d M a t e r i a l s V a n t a g e R a d i a n c e P l u s , A M A T V a n t a g e R a d i a n c e P l u s , V a n t a g e R a d i a n c e P l u s , 0 . 2 5 p m T E C H N O L O G Y , L a m p - b a s e d , L a s e r - b a s e d , H e a t e r - b a s e d , i r r a d i a t e t h e s u r f a c e o f t h e m a t e r i a l , V e e c o , M a t t s o n T e c h n o l o g y , S c r e e n H o l d i n g s , A n n e a l S y s , A p p l i e d M a t e r i a l s , K o k u s a i E l e c t r i c , J T E K T T h e r m o S y s t e m s , T o k y o E l e c t r o n , C e n t r o t h e r m , H i t a c h i K o k u s a i E l e c t r i c , M o d u l a r P r o c e s s T e c h n o l o g y , S h a n k a r M u t h u k r i s h n a n , B e y o n d t h e 1 0 0 n m n o d e , s i n g l e - w a f e r R T P , s i n g l e - w a f e r r a p i d t h e r m a l P r o c e s s i n g , s u b - 1 0 0 n m d e v i c e d e s i g n n o d e , u l t r a - s h a l l o w j u n c t i o n a c t i v a t i o n a n d a n n e a l , U S J , s i l i c i d e c o n t a c t f o r m a t i o n , t h e r m a l o x i d a t i o n S T I f o r m a t i o n , s p i k e a n n e a l , s p i k e a n n e a l i n g , w i t h i n - w a f e r u n i f o r m i t y , w a f e r - t o - w a f e r p r o c e s s u n i f o r m i t y , n i c k e l s i l i c i d e f o r m a t i o n , r a d i c a l - b a s e d o x i d a t i o n p r o c e s s , r a p i d t h e r m a l p r o c e s s i n g s p i k e a n n e a l , 3 0 0 m m R T P s p i k e a n n e a l p r o c e s s , r a m p - u p m e t h o d o l o g i e s , r a m p d o w n m e t h o d o l o g i e s , R a p i d t h e r m a l a n n e a l i n g a p p a r a t u s , R T A f u r n a c e , D a i - i c h i K i d e n , D a i - i c h i K i d e n R S A , C o m b u s t i o n f u r n a c e , H i g h v a c u u m h e a t i n g s y s t e m , V e r t i c a l h i g h t e m p e r a t u r e h e a t i n g s y s t e m , I n d u c t i o n h e a t i n g s y s t e m ( e l e v a t i n g ) , U l t r a h i g h t e m p e r a t u r e h e a t i n g s y s t e m , C r e a T e c F i s c h e r , G r o w t h S y s t e m s , M i n i M B E S y s t e m , L T - S T M / A F M , E v a p o r a t o r s , C e n t r o t h e r m , c e n t r o t h e r m c . H O R I C O O 3 0 0 , h o r i z o n t a l b a t c h - t y p e s y s t e m , c e n t r o t h e r m c . H O R I C O O 2 0 0 , f i e l d - p r o v e n , u l t r a - v e r s a t i l e t u b e f u r n a c e s y s t e m , c e n t r o t h e r m c . V E R T I C O O , b a t c h - t y p e w a f e r p r o c e s s i n g , s e m i c o n d u c t o r d e v i c e f a b r i c a t i o n , a t m o s p h e r i c p r o c e s s e s , L P C V D p r o c e s s e s , c e n t r o t h e r m c . A C T I V A T O R , h i g h - t e m p e r a t u r e a n n e a l i n g , h i g h - v o l u m e S i C d e v i c e m a n u f a c t u r i n g , e l e c t r i c a l a c t i v a t i o n , p o s t i m p l a n t a t i o n a n n e a l i n g , S i C M O S F E T , d i o d e m a n u f a c t u r i n g , C o s t - e f f i c i e n t d o p a n t a c t i v a t i o n , A n n e a l i n g o f A l N s e e d l a y e r s , A n n e a l i n g o f A l N e p i t a x i a l l a y e r s , c e n t r o t h e r m c . O X I D A T O R , h i g h - t e m p e r a t u r e o x i d a t i o n f u r n a c e , R a p i d T h e r m a l P r o c e s s i n g s y s t e m f o r s i l i c o n a n d c o m p o u n d s e m i c o n d u c t o r s , c . R A P I D 2 0 0 , f u l l y a u t o m a t i c l o a d i n g s y s t e m , c e n t r o t h e r m P E C V D , c . P L A S M A , c . D I F F , c e n t r o t h e r m h i g h l y v e r s a t i l e d i f f u s i o n , w i d e b a n d g a p , c . C R Y S C O O H T A , A P S y s t e m s , A P S y s t e m s K o r e a , K O R O N A R T P - 1 2 M P , K O R O N A R T P - 1 2 L P O , K O R O N A R T P - 1 2 L R / L P R R , S e e b e c k C o e f f i c i e n t / E l e c t r i c R e s i s t a n c e M e a s u r e m e n t S y s t e m Z E M - 3 s e r i e s , M i n i L a m p A n n e a l e r M I L A - 5 0 5 0 , A t m o s p h e r i c T h e r m o e l e c t r i c M o d u l e E v a l u a t i o n S y s t e m F - P E M , K L A - T e n c o r , T e n c o r M g a g e 3 0 0 , S o n o g a g e 2 0 0 , T e n c o r M - g a g e 2 0 0 , S h e e t R e s i s t a n c e M e a s u r e m e n t S y s t e m RFQ for Fast Free Quotation