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Proven Qualified Dry Etcher
40 Years
AW-901eR AW-903eR Plasma Etcher RIE
All specification and information here are subject to change without notice and cannot be used for purchase and facility plan. All legacy equipment trademarks belong to O.E.M.. © 2021 Allwin21 Corp. All Rights Reserved.
Proven Qualified Dry Etcher
Giant Fabs/Labs
AW-901eR AW-903eR Plasma Etcher RIE
Proven Qualified Dry Etcher
Production
AW-901eR AW-903eR Plasma Etcher RIE
All specification and information here are subject to change without notice and cannot be used for purchase and facility plan. All legacy equipment trademarks belong to O.E.M.. © 2021 Allwin21 Corp. All Rights Reserved.
Originated From
The Dominant
Plasma Etcher
of 3-6” Single Wafer in 80’s,90’s
Proven Qualified Dry Etcher
AW-901eR AW-903eR Plasma Etcher RIE
Proven Qualified Dry Etcher
AW-901eR AW-903eR Plasma Etcher RIE
Advanced Technologies
3-axis Integrated
Solid Robotic
Wafer Transfer
AW-901eR AW-903eR Plasma Etcher RIE
For Desktop
/Stand Alone
For TTW
Advanced Technologies
Industrial Grade
Computer
with Large Hard Disk
Driver
AW-901eR AW-903eR Plasma Etcher RIE
Advanced Technologies
Touch Screen
GUI
AW-901eR AW-903eR Plasma Etcher RIE
Advanced Technologies
Fixed Cassette
Station with Sensors
(Optional)
AW-901eR AW-903eR Plasma Etcher RIE
Advanced Technologies
Center Aligner Function
AW-901eR AW-903eR Plasma Etcher RIE
For TTWFor Desktop/Stand Alone
Advanced Technologies
Modern Components
AW-901eR AW-903eR Plasma Etcher RIE
AW-901eR AW-903eR Plasma Etcher RIE
Advanced Technologies
Allwin21 Software
Recipe Edit Factory Set Up
Advanced Technologies
AW-901eR AW-903eR Plasma Etcher RIE
Allwin21 Software
Process Monitor WTM
AW-901eR AW-903eR Plasma Etcher RIE
Advanced Technologies
Allwin21 Software
Board Test Pressure Calibration
Substrate Capability:
• 3”,4”,4.125”,5”,6”
• Round
Configurations and Typical Processes
AW-901eR AW-903eR Plasma Etcher RIE
RF Power and RF Matching:
• 13.56 MHz
• Air Cooling
• 300W/600W/1000W
Configurations and Typical Processes
AW-901eR AW-903eR Plasma Etcher RIE
Configurations and Typical Processes
AW-901eR AW-903eR Plasma Etcher RIE
Model AW-901eR AW-903eR
Pressure Range (mTorr) 0-1000 0-5000
Material Etcher Poly/Nitride Oxide
Pressure Control UPC 225 sccm 2000 sccm
Pins Length (inches) 1.79 2.125
Water Recirculator 1 2
Wafer Ring Aluminum • Ceramic (99.5% Alumina)
• Castillated
RF Cable to Chuck Different Length (26.25”) Different Length (16”)
Electrode Gap (mm) 38 6
Lower Electrode Not Anodized, Not Flat Aligned Anodized, Flat Aligned
Configurations and Typical Processes
AW-901eR AW-903eR Plasma Etcher RIE
Model AW-901eR AW-903eR
MFCs • 50 sccm O2
• 60 sccm Argon
• 25 sccm CFCL3
• 100 sccm SF6
• 15 sccm N2
• 50 sccm CHF3
• 15 sccm SF6
• 200 sccm Helium
Upper
Electrode
• Gas inlet and outlet holes are
contained in 1 piece
• 221 inlet holes(0.031 dia.)
• 60 outlet holes(0.062 dia.)
• Coolant flows around outside
diameter
• Not anodized
• Gas inlet and outlet holes are
contained in separate pieces
• 593 inlet holes(0.008 to 0.016dia.)
• 60 outlet holes (0.130 dia.)
• Coolant flows around outside and
through showerhead
• Showerhead is anodized (exhaust ring
is not)
GEM/SEC II Function:
• Optional
Configurations and Typical Processes
AW-901eR AW-903eR Plasma Etcher RIE
EOP Function:
• Optional
Configurations and Typical Processes
AW-901eR AW-903eR Plasma Etcher RIE
Small Footprint
Configurations and Typical Processes
AW-901eR AW-903eR Plasma Etcher RIE
Desktop Stand Alone Through The Wall(TTW)
44”X44”X26”
(WXDXH)
44”X44”X51”
(WXDXH)
48”X34”X61”
(WXDXH)
Configurations and Typical Processes
AW-901eR AW-903eR Plasma Etcher RIE
Material Etched Polysilicon Nitride Oxide, SOG, PECVD Nitride
Equipment Model AW-901eR AW-903eR
Typical Etchant Gases SF6, O2 , CHClF2 SF6,O2 CHF3, SF6, Helium
Typical Process Pressure (mTorr) 200-450 250-350 1600-3000
Typical RF Power (Watts) 100-250 200-300 400-600
Typical Temperature (°C): 30 30 23
Let’s All win in the 21st Century
Email: sales@allwin21.com
AW-901eR AW-903eR Plasma Etcher RIE

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Aw 90xer plasma etcher rie

  • 1. Proven Qualified Dry Etcher 40 Years AW-901eR AW-903eR Plasma Etcher RIE All specification and information here are subject to change without notice and cannot be used for purchase and facility plan. All legacy equipment trademarks belong to O.E.M.. © 2021 Allwin21 Corp. All Rights Reserved.
  • 2. Proven Qualified Dry Etcher Giant Fabs/Labs AW-901eR AW-903eR Plasma Etcher RIE
  • 3. Proven Qualified Dry Etcher Production AW-901eR AW-903eR Plasma Etcher RIE All specification and information here are subject to change without notice and cannot be used for purchase and facility plan. All legacy equipment trademarks belong to O.E.M.. © 2021 Allwin21 Corp. All Rights Reserved.
  • 4. Originated From The Dominant Plasma Etcher of 3-6” Single Wafer in 80’s,90’s Proven Qualified Dry Etcher AW-901eR AW-903eR Plasma Etcher RIE
  • 5. Proven Qualified Dry Etcher AW-901eR AW-903eR Plasma Etcher RIE
  • 6. Advanced Technologies 3-axis Integrated Solid Robotic Wafer Transfer AW-901eR AW-903eR Plasma Etcher RIE For Desktop /Stand Alone For TTW
  • 7. Advanced Technologies Industrial Grade Computer with Large Hard Disk Driver AW-901eR AW-903eR Plasma Etcher RIE
  • 9. Advanced Technologies Fixed Cassette Station with Sensors (Optional) AW-901eR AW-903eR Plasma Etcher RIE
  • 10. Advanced Technologies Center Aligner Function AW-901eR AW-903eR Plasma Etcher RIE For TTWFor Desktop/Stand Alone
  • 12. AW-901eR AW-903eR Plasma Etcher RIE Advanced Technologies Allwin21 Software Recipe Edit Factory Set Up
  • 13. Advanced Technologies AW-901eR AW-903eR Plasma Etcher RIE Allwin21 Software Process Monitor WTM
  • 14. AW-901eR AW-903eR Plasma Etcher RIE Advanced Technologies Allwin21 Software Board Test Pressure Calibration
  • 15. Substrate Capability: • 3”,4”,4.125”,5”,6” • Round Configurations and Typical Processes AW-901eR AW-903eR Plasma Etcher RIE
  • 16. RF Power and RF Matching: • 13.56 MHz • Air Cooling • 300W/600W/1000W Configurations and Typical Processes AW-901eR AW-903eR Plasma Etcher RIE
  • 17. Configurations and Typical Processes AW-901eR AW-903eR Plasma Etcher RIE Model AW-901eR AW-903eR Pressure Range (mTorr) 0-1000 0-5000 Material Etcher Poly/Nitride Oxide Pressure Control UPC 225 sccm 2000 sccm Pins Length (inches) 1.79 2.125 Water Recirculator 1 2 Wafer Ring Aluminum • Ceramic (99.5% Alumina) • Castillated RF Cable to Chuck Different Length (26.25”) Different Length (16”) Electrode Gap (mm) 38 6 Lower Electrode Not Anodized, Not Flat Aligned Anodized, Flat Aligned
  • 18. Configurations and Typical Processes AW-901eR AW-903eR Plasma Etcher RIE Model AW-901eR AW-903eR MFCs • 50 sccm O2 • 60 sccm Argon • 25 sccm CFCL3 • 100 sccm SF6 • 15 sccm N2 • 50 sccm CHF3 • 15 sccm SF6 • 200 sccm Helium Upper Electrode • Gas inlet and outlet holes are contained in 1 piece • 221 inlet holes(0.031 dia.) • 60 outlet holes(0.062 dia.) • Coolant flows around outside diameter • Not anodized • Gas inlet and outlet holes are contained in separate pieces • 593 inlet holes(0.008 to 0.016dia.) • 60 outlet holes (0.130 dia.) • Coolant flows around outside and through showerhead • Showerhead is anodized (exhaust ring is not)
  • 19. GEM/SEC II Function: • Optional Configurations and Typical Processes AW-901eR AW-903eR Plasma Etcher RIE
  • 20. EOP Function: • Optional Configurations and Typical Processes AW-901eR AW-903eR Plasma Etcher RIE
  • 21. Small Footprint Configurations and Typical Processes AW-901eR AW-903eR Plasma Etcher RIE Desktop Stand Alone Through The Wall(TTW) 44”X44”X26” (WXDXH) 44”X44”X51” (WXDXH) 48”X34”X61” (WXDXH)
  • 22. Configurations and Typical Processes AW-901eR AW-903eR Plasma Etcher RIE Material Etched Polysilicon Nitride Oxide, SOG, PECVD Nitride Equipment Model AW-901eR AW-903eR Typical Etchant Gases SF6, O2 , CHClF2 SF6,O2 CHF3, SF6, Helium Typical Process Pressure (mTorr) 200-450 250-350 1600-3000 Typical RF Power (Watts) 100-250 200-300 400-600 Typical Temperature (°C): 30 30 23
  • 23. Let’s All win in the 21st Century Email: sales@allwin21.com AW-901eR AW-903eR Plasma Etcher RIE