The document discusses 3D integrated circuit (3D-IC) technology and its potential applications for future particle detectors. It provides a brief history of electronics miniaturization leading to the development of 3D-IC. 3D-IC technology can significantly improve integration density, interconnect performance and cost by stacking active layers vertically. Fermilab has been exploring 3D-IC since 2006 through an international consortium and multi-project wafer runs, developing circuits like vertically integrated pixel readout chips for particle tracking.
This document discusses 3D integrated circuits (3D ICs). It begins by introducing 3D ICs and how they allow for higher levels of miniaturization and integration by stacking separately built circuit layers. It then discusses why 3D ICs are needed due to limited space in traditional 2D chip designs. Key benefits of 3D ICs include reduced wire lengths, increased number of nearest neighbors for transistors, and heterogeneous integration. However, 3D ICs also present challenges related to thermal issues, reliability, and design complexity that must be addressed. The document surveys applications and advances in 3D ICs.
The document discusses 3D integrated circuits (ICs) as an alternative to increasing chip area in 2D ICs. It provides motivation for 3D ICs by explaining how interconnect delays are becoming the dominant factor limiting performance as technologies scale. Summarizing key points:
1. Interconnect delays are increasing faster than gate delays as technologies scale, limiting performance gains from device scaling alone.
2. 3D chip stacking can help address this by reducing wire lengths and capacitances through short vertical interconnects between layers.
3. 3D ICs also enable heterogeneous integration of different technologies like digital, analog and RF on a single chip through separate layers.
This document discusses 3D integrated circuits and provides the following information:
1. 3D integrated circuits aim to address issues with interconnect delays by stacking silicon layers and using short vertical interconnects between layers. This can improve chip performance and reduce area.
2. Rent's rule is used to estimate wire length distributions and chip area for 2D and 3D circuits. For 3D circuits, blocks are placed on separate layers connected by short interlayer interconnects.
3. Estimates show that a two-active-layer 3D circuit can minimize chip area with fixed interconnect delay or increase performance by increasing chip area. The number of silicon and metal layers also impact performance.
This document summarizes a technical seminar on 3D IC technology. It defines 3D ICs as having two or more layers of electronic components integrated vertically and horizontally. 3D ICs offer performance benefits like reduced timing/delays and energy usage due to shorter interconnects compared to conventional 2D chip designs. However, 3D ICs also present challenges like increased costs, handling issues during manufacturing, heat dissipation, complex design/testing, and lack of standards.
3D Integrated Circuits and their economic feasibilityJeffrey Funk
The document discusses 3D integrated circuits (3D ICs) and provides an agenda for a presentation on the topic. The agenda includes an introduction to 3D ICs, advantages of 3D ICs such as reduced timing delay and chip area, challenges in developing 3D IC technology including design tools and manufacturing processes, and business opportunities for 3D ICs in applications like autonomous vehicles, wearables, and smart home devices. Speakers are listed to discuss various aspects of 3D ICs.
3D IC technology stacks multiple silicon layers vertically using through-silicon vias to connect the layers. This reduces interconnect length and delay. Motivations for 3D ICs include alleviating increasing interconnect delay issues at smaller process nodes. Fabrication approaches include wafer bonding and epitaxial growth. Performance benefits include reduced timing delay and energy due to shorter interconnects. Challenges include thermal issues due to increased power density, EMI, and reliability concerns between layers. 3D ICs impact circuit design and architecture such as critical path layout, buffer insertion, and mixed-signal separation.
3D IC technology stacks multiple layers of active electronic components on top of one another to address challenges from increasing interconnect delays and power consumption in traditional 2D chip designs. By stacking components, 3D ICs can reduce chip footprint and cost while shortening interconnect lengths to decrease RC delays and power usage. However, 3D designs also introduce new challenges related to thermal management and design complexity that still require ongoing research and development.
This document discusses 3D integrated circuits (3D ICs). It begins by introducing 3D ICs and how they allow for higher levels of miniaturization and integration by stacking separately built circuit layers. It then discusses why 3D ICs are needed due to limited space in traditional 2D chip designs. Key benefits of 3D ICs include reduced wire lengths, increased number of nearest neighbors for transistors, and heterogeneous integration. However, 3D ICs also present challenges related to thermal issues, reliability, and design complexity that must be addressed. The document surveys applications and advances in 3D ICs.
The document discusses 3D integrated circuits (ICs) as an alternative to increasing chip area in 2D ICs. It provides motivation for 3D ICs by explaining how interconnect delays are becoming the dominant factor limiting performance as technologies scale. Summarizing key points:
1. Interconnect delays are increasing faster than gate delays as technologies scale, limiting performance gains from device scaling alone.
2. 3D chip stacking can help address this by reducing wire lengths and capacitances through short vertical interconnects between layers.
3. 3D ICs also enable heterogeneous integration of different technologies like digital, analog and RF on a single chip through separate layers.
This document discusses 3D integrated circuits and provides the following information:
1. 3D integrated circuits aim to address issues with interconnect delays by stacking silicon layers and using short vertical interconnects between layers. This can improve chip performance and reduce area.
2. Rent's rule is used to estimate wire length distributions and chip area for 2D and 3D circuits. For 3D circuits, blocks are placed on separate layers connected by short interlayer interconnects.
3. Estimates show that a two-active-layer 3D circuit can minimize chip area with fixed interconnect delay or increase performance by increasing chip area. The number of silicon and metal layers also impact performance.
This document summarizes a technical seminar on 3D IC technology. It defines 3D ICs as having two or more layers of electronic components integrated vertically and horizontally. 3D ICs offer performance benefits like reduced timing/delays and energy usage due to shorter interconnects compared to conventional 2D chip designs. However, 3D ICs also present challenges like increased costs, handling issues during manufacturing, heat dissipation, complex design/testing, and lack of standards.
3D Integrated Circuits and their economic feasibilityJeffrey Funk
The document discusses 3D integrated circuits (3D ICs) and provides an agenda for a presentation on the topic. The agenda includes an introduction to 3D ICs, advantages of 3D ICs such as reduced timing delay and chip area, challenges in developing 3D IC technology including design tools and manufacturing processes, and business opportunities for 3D ICs in applications like autonomous vehicles, wearables, and smart home devices. Speakers are listed to discuss various aspects of 3D ICs.
3D IC technology stacks multiple silicon layers vertically using through-silicon vias to connect the layers. This reduces interconnect length and delay. Motivations for 3D ICs include alleviating increasing interconnect delay issues at smaller process nodes. Fabrication approaches include wafer bonding and epitaxial growth. Performance benefits include reduced timing delay and energy due to shorter interconnects. Challenges include thermal issues due to increased power density, EMI, and reliability concerns between layers. 3D ICs impact circuit design and architecture such as critical path layout, buffer insertion, and mixed-signal separation.
3D IC technology stacks multiple layers of active electronic components on top of one another to address challenges from increasing interconnect delays and power consumption in traditional 2D chip designs. By stacking components, 3D ICs can reduce chip footprint and cost while shortening interconnect lengths to decrease RC delays and power usage. However, 3D designs also introduce new challenges related to thermal management and design complexity that still require ongoing research and development.
The 3D IC technology involves stacking two or more layers of active electronic components vertically and horizontally on a single circuit. This document discusses the concept of integrated microchannel cooling for 3D ICs. It describes the fabrication process, theoretical analysis, experimental characterization, benefits, and challenges of this technology. Microchannel cooling allows for improved thermal resistance over air cooling methods. The 3D IC technology enables shorter interconnect lengths and reduced switching energy.
3D packaging stacks separate chips in a single package to save space without integrating the chips. Monolithic 3D ICs build components in layers on a single wafer then dice it, avoiding alignment and bonding issues. Multi-wafer 3D ICs build components on separate wafers, which must be aligned, bonded, and thinned with vertical connections added through silicon vias. 3D ICs promise benefits like reduced cost from improved yield, lower power from shorter wires, and new design possibilities from added connectivity, but challenges include heat dissipation, design complexity, and testing of independent dies.
The document presents information on 3D integrated circuits (3D ICs). It discusses the idea for 3D ICs to reduce delays and power consumption compared to 2D chips. It describes 3D IC architecture as stacking layers of active components vertically and horizontally. The manufacturing technologies for 3D ICs include monolithic, wafer on wafer, die on wafer, and die on die approaches. Advantages of 3D ICs include reduced wiring, capacitances, power dissipation, and improved performance. Concerns include thermal and reliability issues. Research is ongoing to introduce cheaper 3D ICs for applications like memory.
3D IC technology stacks multiple silicon layers vertically using through-silicon vias to connect the layers. This reduces wire lengths and interconnect delays which are becoming a dominant factor in chip performance. Challenges include thermal issues due to increased power density, electromagnetic interference, and reliability concerns between layers. Design tools are needed to take advantage of 3D architectures for applications like placing critical logic on separate layers to reduce delays.
3D integrated circuits can alleviate problems associated with increasing chip complexity by integrating multiple layers of active components vertically. This reduces interconnect length and delays, lowers power dissipation, and facilitates heterogeneous integration. 3D ICs can be constructed using different techniques like monolithic, wafer-on-wafer, die-on-wafer, and die-on-die approaches. The technology offers advantages like improved performance, reduced chip area and costs, and better noise isolation of digital and analog circuits. While thermal and reliability issues require attention, 3D ICs are expected to replace conventional chips in applications like mobile devices due to their reduced size, cost and power consumption.
3D IC Presented by Tripti Kumari, School of Engineering, CUSATthevijayps
A 3D Integrated Circuit is a chip that has active electronic components stacked on one or more layers that are integrated both vertically and horizontally forming a single circuit.
In the 3-D design architecture, an entire chip is divided into a number of blocks, and each block is placed on a separate layer of Si that are stacked on top of each other.
In a generic 3D IC structure, each die is stacked on top of another and communicated by Through-Silicon Vias (TSVs).
Architectural issues
Traditional shared buses do not scale well – bandwidth saturation
Chip IO is pad limited
Physical issues
On-chip Interconnects become increasingly slower w.r.t. logic
IOs are increasingly expensive
Consequences
Performance losses
Power/Energy cost
Design closure issues or infeasibility
Reduced wire length
Total wire length
Larger circuits produce more improvement
Lower power per transistor
Decreased interconnect delay
Higher transistor packing densities
Smaller chip areas
There are four ways to build a 3D IC:
Monolithic
Wafer-on-Wafer
Die-on-Wafer
Die On Die
At runtime, thermal variations will introduce additional time-varying clock skew, further increasing design uncertainty
2 - Thermal Issues In 3-D ICs
Due to reduction in chip size of a 3D implementation, 3D circuits exhibit a sharp increase in power density
Analysis of Thermal problems in 3D is necessary to evaluate thermal robustness of different 3D technology and design options.
3 - Reliability Issues In 3-D ICs
Electro thermal and Thermo-mechanical effects between various active layers can influence electro-migration and chip performance
Die yield issues may arise due to mismatches between die yields of different layers, which affect net yield of 3D chips.
TSV check on reset
Control use dedicated Vias in order to establish which vias are corrupted.
If 1, 2 and 3 TSVs are OK, the control set the enable signal set_to and set_from: broken path are skipped!
Pads routing shift as show in the figure
Need to define The handling protocol during the TSVs check
3D IC design is a relief to interconnect driven IC design.
Still many manufacturing and technological difficulties
Physical Design needs to consider the multiple layers of Silicon available.
Optimization of both temperature and wirelength
Placement and routing algorithms need to be modified
[1] J. Davis, et al., "Interconnect limits on gigascale integration (GSI) in the 21st century," Proceedings of the IEEE , vol.89, no.3, pp.305-324, Mar 2001.
[2] Banerjee, K.; Souri, S.J.; Kapur, P.; Saraswat, K.C.; , "3-D ICs: a novel chip design for improving deep- submicrometer interconnect performance and systems-on-chip integration," Proceedings of the IEEE , vol.89, no.5, pp.602-633, May 2001.
3D integrated circuits stack active electronic components in multiple layers within a single circuit to reduce wasted space and improve interconnectivity between components. This allows both homogenous and heterogeneous chips to be accommodated. The substrate is divided into tiers with similar components stacked together to ease interconnections. Fabrication methods include beam recrystallization, processed wafer bonding, and solid phase crystallization. Routing in 3D considers multiple layers and placement of inter-wafer vias to reduce delays. MAGIC layout editing software provides bonding commands to treat layered designs as single entities. 3D ICs provide significant improvements over conventional 2D designs.
This document discusses three-dimensional integrated circuits (3D ICs) and their advantages over traditional 2D circuits. It introduces through-silicon vias (TSVs), which allow vertical electrical connections between silicon layers and enable the stacking of multiple silicon dies. The manufacturing process for 3D ICs is described, including via drilling, filling, polishing to form TSVs. Key advantages of 3D ICs are reduced footprint, shorter interconnect lengths, and lower power compared to 2D circuits. Challenges in developing 3D ICs include yield, heat dissipation, design complexity, and testing. Some notable early 3D chip examples are mentioned.
3D IC technology stacks multiple layers of active silicon circuits to reduce interconnect length and delay. Shorter global interconnects in 3D ICs are expected to reduce both switching energy and cycle time compared to conventional 2D designs. 3D fabrication involves bonding or epitaxial growth of multiple processed silicon wafers. EDA tools are needed to automate the placement, routing, and design of circuits across multiple layers to fully leverage 3D integration.
3D ICs can alleviate problems caused by long interconnects in traditional 2D chips by stacking layers and using short vertical interconnects between layers. This approach improves chip performance and density. However, 3D ICs also introduce thermal and reliability challenges due to heat dissipation issues and stresses between layers that must be addressed. Rent's rule can be used to estimate performance improvements from 3D architectures by analyzing reductions in total interconnect length.
3D IC technology stacks multiple silicon layers vertically using through-silicon vias to connect the layers. This reduces interconnect length and delay. Motivations for 3D ICs include alleviating increasing interconnect delay issues and increasing the number of "nearest neighbors" for each transistor. Fabrication approaches include wafer bonding and epitaxial growth. Performance benefits include reduced timing delay and energy due to shorter interconnects. Design tools are needed to enable 3D IC design.
1) 3D IC designs stack multiple silicon dies on top of each other using through-silicon vias (TSVs) to connect the dies. This overcomes limitations of conventional 2D designs like Moore's law.
2) Key advantages of 3D IC include higher density, performance and lower power consumption from shorter interconnects. It also enables heterogeneous integration and improves reliability.
3) Challenges include developing 3D transistor architectures, managing variability and thermal issues across stacked dies, and ensuring design and manufacturing tools are ready to support 3D IC. Major applications are seen in memory, imaging sensors and processors.
3D IC technology stacks multiple silicon layers vertically using through-silicon vias to connect the layers. This reduces wire lengths and interconnect delays which are becoming a dominant factor in chip performance. Challenges include thermal issues due to increased power density, electromagnetic interference, and reliability concerns from stresses between layers. Design tools are needed to fully utilize 3D ICs and optimize critical paths, mixed-signal partitioning, and physical design across multiple layers.
This document discusses processor architecture design using 3D integration technologies. It begins with an overview of the challenges facing 2D designs, such as increasing interconnect delay and power consumption. It then introduces 3D integration techniques like monolithic assembly and through-silicon vias that can reduce wire lengths and improve performance. The document outlines several 3D design approaches to reduce power, latency, and improve memory bandwidth. It also notes advantages like reduced form factors but challenges involving thermal management and complexity.
This document summarizes research on 3D network-on-chip architectures. It begins by introducing the benefits of 3D integrated circuits for reducing wire lengths and improving performance. It then surveys several existing 3D NoC architectures:
1) Symmetric NoC which treats intra-layer and inter-layer hops identically, incurring high overhead.
2) NoC-Bus Hybrid which uses a bus for single-hop vertical links to reduce hops.
3) Ciliated 3D Mesh which restricts switches to layers and adds cores per switch, lowering bandwidth.
4) True 3D NoC Router which embeds vertical links directly in crossbars for seamless routing.
The
This document discusses transistors, Moore's Law, and the future of computing technology. It provides background on transistors and Moore's Law, which predicted transistors would double every two years. To continue advancing, researchers developed tri-gate transistors which improve performance and efficiency by wrapping the gate on three sides of a vertical silicon fin. The document explores how tri-gate transistors help sustain Moore's Law and examines if alternatives like graphene may be needed as physical limits are reached. It concludes that continued innovation will be necessary to further progress computing power.
Microelectronics has had a huge economic impact by enabling the information age. Progress in microelectronics spurs innovations in downstream industries like computing, telecommunications, and entertainment. While these industries existed before microelectronics, today's information society would not be possible without advances in microelectronics. Microelectronics is the enabling technology behind information technology.
Microelectronics involves the study and manufacturing of very small electronic components on a single semiconductor substrate known as a chip. The key components are integrated circuits (ICs) which contain both active components like transistors and diodes, and passive components like resistors, capacitors, and inductors. There are several fabrication processes used to manufacture ICs, including deposition, photolithography, etching, and doping. ICs provide advantages over discrete components like reduced size, cost, and power consumption.
Optical computing uses light instead of electricity to perform computations much faster than traditional electronic computers. It offers several advantages like speed, easy manipulation of light, and inherent parallelism. Research is developing optical computers using electro-optical hybrids or completely optical architectures. Key components being developed include vertical cavity surface emitting lasers, smart pixel arrays, and wavelength division multiplexing to improve bandwidth. While optical computing promises great speedups, challenges remain in developing robust, low-power optical materials and components to build practical consumer devices. Continued research aims to overcome these challenges and fully realize the potential of optical computing.
The document discusses frameworks for optimizing network-on-chip (NoC) based multi-core computing systems during both design-time and run-time. It presents algorithms and heuristics to optimize metrics like power, energy, temperature and performance during design-time for 2D and 3D NoC layouts. Additionally, it proposes run-time frameworks to adapt operating systems based on circuit characteristics of multi-core systems in order to simultaneously manage constraints imposed by dark silicon, process variations, soft errors and reliability over the system's lifetime. The frameworks aim to efficiently produce feasible and optimized design solutions that provide better overall optimality while considering multiple relevant optimization metrics for modern chip design.
The document provides an overview of the history and evolution of semiconductors and integrated circuits from 1947 to present. It discusses key inventions and milestones such as the transistor in 1947, the integrated circuit in 1961, and Moore's Law predicting transistor doubling every two years. It also covers different chip design approaches including full custom, standard cell, gate arrays, and FPGAs, along with their relative costs, performance, and design complexities.
The document discusses the evolution of computer architectures from early technological achievements like the transistor and integrated circuit. It describes increasing transistor densities following Moore's Law. Future technologies will focus on increasing core counts while decreasing cycle times and voltages. Performance will come from parallelism rather than clock speed increases due to heat limitations. The document outlines challenges in scaling to exascale systems by 2018.
The 3D IC technology involves stacking two or more layers of active electronic components vertically and horizontally on a single circuit. This document discusses the concept of integrated microchannel cooling for 3D ICs. It describes the fabrication process, theoretical analysis, experimental characterization, benefits, and challenges of this technology. Microchannel cooling allows for improved thermal resistance over air cooling methods. The 3D IC technology enables shorter interconnect lengths and reduced switching energy.
3D packaging stacks separate chips in a single package to save space without integrating the chips. Monolithic 3D ICs build components in layers on a single wafer then dice it, avoiding alignment and bonding issues. Multi-wafer 3D ICs build components on separate wafers, which must be aligned, bonded, and thinned with vertical connections added through silicon vias. 3D ICs promise benefits like reduced cost from improved yield, lower power from shorter wires, and new design possibilities from added connectivity, but challenges include heat dissipation, design complexity, and testing of independent dies.
The document presents information on 3D integrated circuits (3D ICs). It discusses the idea for 3D ICs to reduce delays and power consumption compared to 2D chips. It describes 3D IC architecture as stacking layers of active components vertically and horizontally. The manufacturing technologies for 3D ICs include monolithic, wafer on wafer, die on wafer, and die on die approaches. Advantages of 3D ICs include reduced wiring, capacitances, power dissipation, and improved performance. Concerns include thermal and reliability issues. Research is ongoing to introduce cheaper 3D ICs for applications like memory.
3D IC technology stacks multiple silicon layers vertically using through-silicon vias to connect the layers. This reduces wire lengths and interconnect delays which are becoming a dominant factor in chip performance. Challenges include thermal issues due to increased power density, electromagnetic interference, and reliability concerns between layers. Design tools are needed to take advantage of 3D architectures for applications like placing critical logic on separate layers to reduce delays.
3D integrated circuits can alleviate problems associated with increasing chip complexity by integrating multiple layers of active components vertically. This reduces interconnect length and delays, lowers power dissipation, and facilitates heterogeneous integration. 3D ICs can be constructed using different techniques like monolithic, wafer-on-wafer, die-on-wafer, and die-on-die approaches. The technology offers advantages like improved performance, reduced chip area and costs, and better noise isolation of digital and analog circuits. While thermal and reliability issues require attention, 3D ICs are expected to replace conventional chips in applications like mobile devices due to their reduced size, cost and power consumption.
3D IC Presented by Tripti Kumari, School of Engineering, CUSATthevijayps
A 3D Integrated Circuit is a chip that has active electronic components stacked on one or more layers that are integrated both vertically and horizontally forming a single circuit.
In the 3-D design architecture, an entire chip is divided into a number of blocks, and each block is placed on a separate layer of Si that are stacked on top of each other.
In a generic 3D IC structure, each die is stacked on top of another and communicated by Through-Silicon Vias (TSVs).
Architectural issues
Traditional shared buses do not scale well – bandwidth saturation
Chip IO is pad limited
Physical issues
On-chip Interconnects become increasingly slower w.r.t. logic
IOs are increasingly expensive
Consequences
Performance losses
Power/Energy cost
Design closure issues or infeasibility
Reduced wire length
Total wire length
Larger circuits produce more improvement
Lower power per transistor
Decreased interconnect delay
Higher transistor packing densities
Smaller chip areas
There are four ways to build a 3D IC:
Monolithic
Wafer-on-Wafer
Die-on-Wafer
Die On Die
At runtime, thermal variations will introduce additional time-varying clock skew, further increasing design uncertainty
2 - Thermal Issues In 3-D ICs
Due to reduction in chip size of a 3D implementation, 3D circuits exhibit a sharp increase in power density
Analysis of Thermal problems in 3D is necessary to evaluate thermal robustness of different 3D technology and design options.
3 - Reliability Issues In 3-D ICs
Electro thermal and Thermo-mechanical effects between various active layers can influence electro-migration and chip performance
Die yield issues may arise due to mismatches between die yields of different layers, which affect net yield of 3D chips.
TSV check on reset
Control use dedicated Vias in order to establish which vias are corrupted.
If 1, 2 and 3 TSVs are OK, the control set the enable signal set_to and set_from: broken path are skipped!
Pads routing shift as show in the figure
Need to define The handling protocol during the TSVs check
3D IC design is a relief to interconnect driven IC design.
Still many manufacturing and technological difficulties
Physical Design needs to consider the multiple layers of Silicon available.
Optimization of both temperature and wirelength
Placement and routing algorithms need to be modified
[1] J. Davis, et al., "Interconnect limits on gigascale integration (GSI) in the 21st century," Proceedings of the IEEE , vol.89, no.3, pp.305-324, Mar 2001.
[2] Banerjee, K.; Souri, S.J.; Kapur, P.; Saraswat, K.C.; , "3-D ICs: a novel chip design for improving deep- submicrometer interconnect performance and systems-on-chip integration," Proceedings of the IEEE , vol.89, no.5, pp.602-633, May 2001.
3D integrated circuits stack active electronic components in multiple layers within a single circuit to reduce wasted space and improve interconnectivity between components. This allows both homogenous and heterogeneous chips to be accommodated. The substrate is divided into tiers with similar components stacked together to ease interconnections. Fabrication methods include beam recrystallization, processed wafer bonding, and solid phase crystallization. Routing in 3D considers multiple layers and placement of inter-wafer vias to reduce delays. MAGIC layout editing software provides bonding commands to treat layered designs as single entities. 3D ICs provide significant improvements over conventional 2D designs.
This document discusses three-dimensional integrated circuits (3D ICs) and their advantages over traditional 2D circuits. It introduces through-silicon vias (TSVs), which allow vertical electrical connections between silicon layers and enable the stacking of multiple silicon dies. The manufacturing process for 3D ICs is described, including via drilling, filling, polishing to form TSVs. Key advantages of 3D ICs are reduced footprint, shorter interconnect lengths, and lower power compared to 2D circuits. Challenges in developing 3D ICs include yield, heat dissipation, design complexity, and testing. Some notable early 3D chip examples are mentioned.
3D IC technology stacks multiple layers of active silicon circuits to reduce interconnect length and delay. Shorter global interconnects in 3D ICs are expected to reduce both switching energy and cycle time compared to conventional 2D designs. 3D fabrication involves bonding or epitaxial growth of multiple processed silicon wafers. EDA tools are needed to automate the placement, routing, and design of circuits across multiple layers to fully leverage 3D integration.
3D ICs can alleviate problems caused by long interconnects in traditional 2D chips by stacking layers and using short vertical interconnects between layers. This approach improves chip performance and density. However, 3D ICs also introduce thermal and reliability challenges due to heat dissipation issues and stresses between layers that must be addressed. Rent's rule can be used to estimate performance improvements from 3D architectures by analyzing reductions in total interconnect length.
3D IC technology stacks multiple silicon layers vertically using through-silicon vias to connect the layers. This reduces interconnect length and delay. Motivations for 3D ICs include alleviating increasing interconnect delay issues and increasing the number of "nearest neighbors" for each transistor. Fabrication approaches include wafer bonding and epitaxial growth. Performance benefits include reduced timing delay and energy due to shorter interconnects. Design tools are needed to enable 3D IC design.
1) 3D IC designs stack multiple silicon dies on top of each other using through-silicon vias (TSVs) to connect the dies. This overcomes limitations of conventional 2D designs like Moore's law.
2) Key advantages of 3D IC include higher density, performance and lower power consumption from shorter interconnects. It also enables heterogeneous integration and improves reliability.
3) Challenges include developing 3D transistor architectures, managing variability and thermal issues across stacked dies, and ensuring design and manufacturing tools are ready to support 3D IC. Major applications are seen in memory, imaging sensors and processors.
3D IC technology stacks multiple silicon layers vertically using through-silicon vias to connect the layers. This reduces wire lengths and interconnect delays which are becoming a dominant factor in chip performance. Challenges include thermal issues due to increased power density, electromagnetic interference, and reliability concerns from stresses between layers. Design tools are needed to fully utilize 3D ICs and optimize critical paths, mixed-signal partitioning, and physical design across multiple layers.
This document discusses processor architecture design using 3D integration technologies. It begins with an overview of the challenges facing 2D designs, such as increasing interconnect delay and power consumption. It then introduces 3D integration techniques like monolithic assembly and through-silicon vias that can reduce wire lengths and improve performance. The document outlines several 3D design approaches to reduce power, latency, and improve memory bandwidth. It also notes advantages like reduced form factors but challenges involving thermal management and complexity.
This document summarizes research on 3D network-on-chip architectures. It begins by introducing the benefits of 3D integrated circuits for reducing wire lengths and improving performance. It then surveys several existing 3D NoC architectures:
1) Symmetric NoC which treats intra-layer and inter-layer hops identically, incurring high overhead.
2) NoC-Bus Hybrid which uses a bus for single-hop vertical links to reduce hops.
3) Ciliated 3D Mesh which restricts switches to layers and adds cores per switch, lowering bandwidth.
4) True 3D NoC Router which embeds vertical links directly in crossbars for seamless routing.
The
This document discusses transistors, Moore's Law, and the future of computing technology. It provides background on transistors and Moore's Law, which predicted transistors would double every two years. To continue advancing, researchers developed tri-gate transistors which improve performance and efficiency by wrapping the gate on three sides of a vertical silicon fin. The document explores how tri-gate transistors help sustain Moore's Law and examines if alternatives like graphene may be needed as physical limits are reached. It concludes that continued innovation will be necessary to further progress computing power.
Microelectronics has had a huge economic impact by enabling the information age. Progress in microelectronics spurs innovations in downstream industries like computing, telecommunications, and entertainment. While these industries existed before microelectronics, today's information society would not be possible without advances in microelectronics. Microelectronics is the enabling technology behind information technology.
Microelectronics involves the study and manufacturing of very small electronic components on a single semiconductor substrate known as a chip. The key components are integrated circuits (ICs) which contain both active components like transistors and diodes, and passive components like resistors, capacitors, and inductors. There are several fabrication processes used to manufacture ICs, including deposition, photolithography, etching, and doping. ICs provide advantages over discrete components like reduced size, cost, and power consumption.
Optical computing uses light instead of electricity to perform computations much faster than traditional electronic computers. It offers several advantages like speed, easy manipulation of light, and inherent parallelism. Research is developing optical computers using electro-optical hybrids or completely optical architectures. Key components being developed include vertical cavity surface emitting lasers, smart pixel arrays, and wavelength division multiplexing to improve bandwidth. While optical computing promises great speedups, challenges remain in developing robust, low-power optical materials and components to build practical consumer devices. Continued research aims to overcome these challenges and fully realize the potential of optical computing.
The document discusses frameworks for optimizing network-on-chip (NoC) based multi-core computing systems during both design-time and run-time. It presents algorithms and heuristics to optimize metrics like power, energy, temperature and performance during design-time for 2D and 3D NoC layouts. Additionally, it proposes run-time frameworks to adapt operating systems based on circuit characteristics of multi-core systems in order to simultaneously manage constraints imposed by dark silicon, process variations, soft errors and reliability over the system's lifetime. The frameworks aim to efficiently produce feasible and optimized design solutions that provide better overall optimality while considering multiple relevant optimization metrics for modern chip design.
The document provides an overview of the history and evolution of semiconductors and integrated circuits from 1947 to present. It discusses key inventions and milestones such as the transistor in 1947, the integrated circuit in 1961, and Moore's Law predicting transistor doubling every two years. It also covers different chip design approaches including full custom, standard cell, gate arrays, and FPGAs, along with their relative costs, performance, and design complexities.
The document discusses the evolution of computer architectures from early technological achievements like the transistor and integrated circuit. It describes increasing transistor densities following Moore's Law. Future technologies will focus on increasing core counts while decreasing cycle times and voltages. Performance will come from parallelism rather than clock speed increases due to heat limitations. The document outlines challenges in scaling to exascale systems by 2018.
The document discusses the history and development of VLSI (Very Large Scale Integration) technology and Moore's Law over time. It describes how transistors have gotten smaller through scaling, allowing more to fit on chips. This doubling of transistors every couple years is known as Moore's Law. 3D VLSI is presented as a potential solution to continue following Moore's Law by building chips in three dimensions rather than just two. Key challenges of 3D integration are also outlined.
VLSI stands for Very Large Scale Integration and refers to integrated circuits with over 100,000 transistors. The document discusses the history and progression of integration levels from SSI to VLSI to ULSI. It also describes the photolithography process used to etch circuit designs onto silicon wafers at the microscopic level needed for modern integrated circuits.
This document discusses integrated circuit technology. It begins with an overview of the IC market breakdown by sector. It then discusses advantages of ICs such as smaller size, higher speed, lower power consumption compared to discrete components. The document provides a history of important IC inventions from 1904 to the present. It also discusses transistor scaling that has allowed achieving more complex ICs through reduced dimensions over time. Finally, it covers different IC design styles such as full custom, standard cell, gate array, and FPGA and their tradeoffs in terms of performance, cost, area, and time-to-market.
This document provides information about integrated circuit (IC) technology. It discusses the advantages of ICs over discrete components such as smaller size, higher speed, and lower power consumption. It outlines the early developments in IC technology from 1949 onwards. The document also discusses transistor scaling and how Moore's Law has allowed the semiconductor industry to achieve more complex ICs. Different IC circuit technologies such as BJT, CMOS, BiCMOS, SOI, and GaAs are briefly described. The scaling challenges at smaller technology nodes such as increased variability and static power are also mentioned.
Chip design and fabrication prospects are increasing in India. The latest trends include:
1) FPGA use is growing and new low-cost FPGAs are enabling more system design.
2) Automotive applications like infotainment and autonomous driving require advanced chip designs.
3) Biometric security, neural networks, and system-on-chip designs are emerging areas.
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Segmentation of Overlapped and Touching Human Chromosome imagesIOSR Journals
This document describes the design and analysis of a 4-bit Johnson counter using 16nm FinFET technology. It first discusses the advantages of FinFET over conventional CMOS for reducing short channel effects at small scales. It then presents the structure and manufacturing process of FinFET. A single-edge triggered D flip-flop using 9 FinFET transistors is proposed for use in the Johnson counter. The 4-bit Johnson counter is implemented by connecting 4 of these D flip-flops in a ring configuration. Simulation results show the waveforms of the D flip-flop and Johnson counter operating at 500MHz with 0.85V power supply. Compared to a conventional flip-flop-based counter, the proposed FinFET Johnson
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Experiences in Application Specific Supercomputer Design - Reasons, Challenge...Heiko Joerg Schick
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This document discusses challenges and opportunities for end nodes with multigigabit networking. It covers increasing bandwidth capabilities through technologies like DWDM and 10GbE. It also examines hardware challenges for processor, memory, and I/O buses. Software challenges discussed include zero-copy networking, ULNI/OS bypass, and network path pipelining. The document also summarizes network protocols like AQM, ECN, MPLS and their roles in high-speed networking.
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1. 3D-IC technology for future detectors, FNAL, 02/17/2009
3D-IC technology for future
detectors
Grzegorz Deptuch
on behalf of the FERMILAB ASIC design group
Raymond Yarema
Grzegorz Deptuch, Jim Hoff, Farah Khalid, Marcel Trimpl, Alpana Shenai,
Tom Zimmerman
OUTLINE:
1) History and introduction
2) Why 3D-IC?
3) Key components for 3D-IC technology
4) 3D IC at 1
3D-Fermilab
5) Roadmaps and summary
3. 3D-IC technology for future detectors, FNAL, 02/17/2009
History and introduction
First electronic components allowing performing nonlinear
funnctions were vacuum tubes
Construction of vacuum
tubes was complex,
their cost was high, but
above all they were
bulky (not good
candidates for
miniaturization)D
They are still loved by
f r hi hest
3
audiphiles for highest
fidelity in sound But 3D-IC belongs to
solid state transistors
4. 3D-IC technology for future detectors, FNAL, 02/17/2009
History and introduction First integrated circuit
(T I t t Texas Instruments 1958)
First transistor Very soon we have two
(Bell Labs 1947)
and more transistors 2D integration technology
rulesin electronics of
our days
Intel Xeon 6 core
4
microprocessor
More and more components, more and 1.9x109 transistors
more functions, growing complexity
5. 3D-IC technology for future detectors, FNAL, 02/17/2009
History and introduction
2”, 4”, 6”, 8” planar wafers
X-section of NMOS transistor seen
in Scanning Resistance Microsope
5 Example of a planar process flow
6. 3D-IC technology for future detectors, FNAL, 02/17/2009
History and introduction
View of the same simple SRAM cell in 90nm, 65nm and 45nm process node
6
Interconnectivity is THE ISSUE!!!
Backplane of PDP-8I machine wire-wrapped
recent
processes allow
up to 10 interconnection metal layers
7. 3D-IC technology for future detectors, FNAL, 02/17/2009
Why 3D-IC?
BEFORE AFTER: 3D IC Intel Photo used as proxy
rendering of 3D IC
Only memory directly
compatible with logic process
(virtually no choice!)
3D 14× Single Die~ 430 mm2 2D IC “All or Nothing”
Wafer Cost ~ $6 000
14 increase in memory density
4× Logic Cost Reduction
29× → 100× memory cost reduction
(choice!)
6,000
Low yield ~ 15%, ~ 10 parts per wafer 128MB not 9MB
memory costs ~ $44/MB memory costs ~ $1.50/MB → $0.44/MB
Operation Energy
32-bit ALU operation 5 pJ
32-bit register read 10 pJ
Read 32 bits from 8K RAM 50 pJ
Calculations using a 130nm
process operating at a core
7
p
Move 32 bits across 10mm chip 100 pJ
Move 32 bits off chip 1300 to 1900 pJ
voltage of 1.2V
(Source: Bill Dally, Stanford)
From Bob Patti Tezzaron
8. 3D-IC technology for future detectors, FNAL, 02/17/2009
Why 3D-IC?
improvements to achieve using 3D-IC :
reduced interconnect delays (R, L, C), higher clock rates,
reduced interconnect capacitance ( I/O pads ), lower power dissipation,
higher integration density, may go heterogeneous
high bandwidth μ-processors
merging different process technologies, mixed materials, system integration,
advanced focal planes
8
Optimal repartition of functions
9. 3D-IC technology for future detectors, FNAL, 02/17/2009
Why 3D-IC?
3D
Real estate analogy
How much time, effort and energy
(gas) is needed to communicate with
your neigbors in 2D assembly?
2D
9
10. 3D-IC technology for future detectors, FNAL, 02/17/2009
Key components of 3D-IC technology
3D-IC definition
A chip in three-dimensional integrated circuit (3D-IC) technology is
composed of two or more layers of active electronic components,
integrated both vertically and horizontally
3D-IC methods
Agressive wafer thinning, through wafer/chip connectivity, back-side
metalization and patterning, oxide or metal bonding (W-W, C-W, C-C)
Fermilab position in 3D-IC
Fermilab began exploring the technologies for 3D circuits in 2006.
Fermilab is leading an Int’’l Consortium (15 members) on 3D-IC for
scientific applications, mainly HEP
h //3di f l
http://3dic.fnal.gov
Importance of 3D-IC in detectors
N t l ‘‘t i t / 2’’ b t 3D IC th d l d t l t f
10
Not only more transistors/μm2’’, but 3D-methods lead to replacement of
typical bump bonds and open new frontiers for detectors architectures
11. 3D-IC technology for future detectors, FNAL, 02/17/2009
Key components of 3D-IC technology
THROUGH SILICON VIAS (TSV)
proxy picture 11
12. 3D-IC technology for future detectors, FNAL, 02/17/2009
3D-IC at Fermilab
Via Last
3D Features:
VIA VIA-LAST process ( i vias dd added d t
to
wafers after bonding and thinning) ––
excludes large area for local
interconnect in TSV locations
Readily based on Silicon-on-
Insulator process where presence of
natural oxides acts as etch stoppers
and bonding surfaces
potential use of heteregenous
wafers
Submissions:
Two generations of Vertically Integrated
Pixel (VIP) readout chips with features
12
for ILC detector vertex (run 3DM2 and
3DM3, 2006 and 2008 respectively)
13. 3D-IC technology for future detectors, FNAL, 02/17/2009
3D 3D-IC at Fermilab
top view edge view
~700 μm
Metal fill cut
while dicing ~7 μm ~7 μm ~7 μm
VIP1 chip
MIT-LL 0.18μm process
13
14. 3D-IC technology for future detectors, FNAL, 02/17/2009
3D-IC at Fermilab
Features: Via First
VIA-FIRST process (vias are part of the
wafer processing inserted before or
right after forming transistors) ––
metal interconnect lines are not excluded
over TSV locations (TSVs 1.3 μm diameter,
3.8 μm rec. spacing and 6 μm depth),
8”” wafers, large ~26×31 mm2 reticule,
W 6th metal used as a bond interface for
face-face Cu-Cu thermo-compression
bonding
Submissions:
3 fully functional prototypes from
Fermilab together with 9 other
subreticules from participating
14
p p g
institutions submitted on a Fermi
MPW run in 2009; currently ‘‘in fab’’
0.13 μm bulk CMOS by Chartered with
Tezzaron 3D via-first technology
11
15. 3D-IC technology for future detectors, FNAL, 02/17/2009
3D-IC at Fermilab
• Access to the first commercially available 3D-IC process through Tezzaron
excited creation of a consortium centered on Fermilab in late 2008. The
consortium groups international laboratories and universities with interest in
High Energy Physics for the development of 3D integrated circuits.
Consortium presently comprised of 15 members from 5 countries
– University at
Bergamo
– University at Pavia
– University of Bonn
– AGH University of
– University at Perugia S i T h l
– INFN Bologna
– INFN at Pisa
Science Technology,
Poland
– Fermilab, Batavia
– INFN at Rome
– CPPM, Marseilles
– IPHC, Strasbourg
• Others contributing to first
MPW
BNL Brookhaven
– IRFU Saclay
– LAL, Orsay
– LPNHE – BNL, – LBNL, Berkeley
15
LPNHE, Paris
– CMP, Grenoble http://3dic.fnal.gov
16. 3D-IC technology for future detectors, FNAL, 02/17/2009
3D-IC at Fermilab
• 3D chip has two tiers
• One set of masks used for both
top and bottom tiers to reduce
3D mask cost.
– Identical wafers bonded face to
face by Tezzaron.
– Backside metallization by
Tezzaron.
• Frame divided into 12
subreticules among consortium
members
• More than 25 two-tier designs
(circuits and test devices)
– CMS strips, ATLAS pixels
TXL TYL TYR TXR
AL BL BR AR
TX1 TY1 TY2 TX2
A1 B1 B2 A2
C1 D1 D2 C2
DL DR CR
– ILC pixels
– B factory pixels
– X-ray imaging
T t i it
E1 F1 F2 F2
G1 H1 H2 G2
J1 K1 K2 J2
TX1 TY1 TY2 TX2
A1 B1 B2 A2
C1 D1 D2 C2
E1 F1 F2 F2
G1 H1 H2 G2
J1 K1 K2 J2
CL EL FL FR ER
– Test circuits GL HL HR GR
• Radiation
• Cryogenic operation
• Via and bonding reliability
Frame layout
IL JL JR IR
Max frame layout area including
internal saw streets: x=25.760 mm
y= 30.260 mm.
16
• SEU tolerance Wafer Map
17. 3D-IC technology for future detectors, FNAL, 02/17/2009
3D-IC at Fermilab
Test chips:
TX, TY
2.0 x 6.3 mm
– frame organization:
• Top and bottom tiers
fabricated on the same
frame; vertical symmetry
about the the
3D center of frame for flipping one
wafer over another and
obtaining matching of
circuits in 3D assembly,
• All designs initially
submitted by mid-May
2009
Fermilab designs
• H = VICTR; short pixel
readout chips realizing pt
cut for implementation of
L1 trigger embedded in
t k f CMS@Subreticules: – A, B, C, D, E,
F, G, H, I, J
5.5 x 6.3 mm
tracker for CMS @ SLHC
• I = VIP2b; time stamping
pixel readout chip for
Full frame
vertex detector @ ILC
• J = VIPIC; 0.13 μm
Chartered
very high frame
rate with sparsification
pixel readout chip for X-ray
Photon Correlation
Spectroscopy @ light
source
H H*
I J J* I*
Top tiers Bottom Tiers 17
18. 3D-IC technology for future detectors, FNAL, 02/17/2009
3D-IC at Fermilab
VICTR FNAL/CPPM/LBNL
Vertically Integrated CMS Tracker
– How it works:
• Design employing the FEI4
3D ATLAS pixel front-end
• Top tier looks for hits from
long φ strips and bottom
tier looks for coincidence
1 mm
between φφ strips and
shorter z strips connected
to bottom tier.
• Designed for 80 μm pitch
sensors
• Serial readout of all top
and bottom strips along
with coincidence
information
•• Downloadable hit patterns
• Fast OR outputs
• Circuit to be thinned to 24
microns and connections
made to both the top and
bottom of the chip
18
Processes signals from 2 closely spaced parallel
silicon strip sensor planes (φ and Z planes).
19. 3D-IC technology for future detectors, FNAL, 02/17/2009
3D-IC at Fermilab
VIP2B – How it works:
• Adapted from earlier MITLL designs in
FDSOI technology
• 192 × 192 array of 24 μm2 pixels
Vertically Integrated Pixel
VIP Functional
block diagram
3D • 8 bit digital time stamp (Δt=3.9 μs)
• Readout between ILC bunch trains of
sparsified data
• Sparsification based on token passing
scheme
• Single stage signal integrating front-end
with 2 S/H circuits for analog signal output
with CDS
• Analog information available for improved
resolution
• Separate test input for every pixel cell
• Serial output bus
• Polarity switch for collection of e- or h+
signals are accumulated
and time stamped using
l b l G d t
19
global Grey code counter
20. 3D-IC technology for future detectors, FNAL, 02/17/2009
3D-IC at Fermilab VIPIC Common effort of:
cur_sel3..0
FNAL/BNL and
UST-AGH Poland
Vertically Integrated Photon Imaging Chip
0
64
1
65
2
66
3
67
4
68
5
69
191
126
192
127
outp15
alizer
– How it works:
• X-ray Photon
Correlation
Group S t (15
outn15
seria
Spectroscopy XPCS)
is a technique that is
used at X-ray light
sources to generate
speckle patterns for
Group
1
the study of the
dynamics in various
equilibrium and non-equilibrium
processes
• chip outp0
64
zer
0
1
65
2
66
3
67
4
68
5
69
62
126
63
127
The is divided in
16 group of 256 pixels
read out in parallel but
through separate
LVDS serial ports
D t ifi ti i
192
outn0
128
seriali
129
191
130
190
131
189
132
188
133
187
190
254
191
255
LVDS
DRV
Group
0
• Data sparsification is
performed in each
group
al_Clk
estart
Top view - bump bonding pads on the back of the digital tier 20
21. 3D-IC technology for future detectors, FNAL, 02/17/2009
3D-IC at Fermilab
Full separation of analog and digital achieved by dividing
functionalities between tiers
1400 transistors / pixel 280 transistors / pixel
80μm
Digital part of pixel Analog part of pixel
Po e s pplies t ansfe ed bet een tie s 80μm
21
Power supplies transferred between tiers; 25 connections
between tiers for signals in each pixel
22. 3D-IC technology for future detectors, FNAL, 02/17/2009
3D-IC at Fermilab
22
• detector/ROIC bonding; with Ziptronix low mass DBI bonding
• Conventional bumps or CuSn are expensive and not low mass fine pitch
23. 3D-IC technology for future detectors, FNAL, 02/17/2009
3D-IC at Fermilab
Less aggressive mounting option
fanout/routing on the detector; pads created on the detector, wire bonding to
the pads on the detector to mount in the system
23
DBI bonding with Ziptronix (a form of oxide bonding)
24. 3D-IC technology for future detectors, FNAL, 02/17/2009
3D-IC at Fermilab
ROIC to Sensor
uses Direct
bond ROIC (400 um)
interconnect
Sensor with wire bond fanout
(300 um)
Circuit board Circuit board
X-rays
Option 1 - Less Aggressive Mounting
24
25. 3D-IC technology for future detectors, FNAL, 02/17/2009
3D-IC at Fermilab
aggressive mounting option –– essence of 3D-IC
Ultimate goal is:
fi t 4 id b tt bl d t t t
first 4-side buttable detector system
low density array of I/O pads available on the side of the readout chip -
opposite to the detector; one side of the readout chip connected to the detector
using bonding technique second side used to mount the device
25
DBI or similar technique, on the support PCB with bump or stud bonding technique
26. 3D-IC technology for future detectors, FNAL, 02/17/2009
3D-IC at Fermilab
X
3D X-rays
Sensor to PCB Sensor (300 um)
uses bump bonds
ROIC is 25 um thick
after thinning
Circuit board
Option 2 - More Aggressive Mounting
for four side buttable sensor arrays
26
28. 3D-IC technology for future detectors, FNAL, 02/17/2009
High-density I/O roadmap 3D‐IC chips must be fabricated
at wafger foundries, the role of
packaging houses will be
minimized
We are here now
Transistor scaling era is
ending; growing in 3rd
dimension is the
future, first 3D
packaging, then 3D
integrated d
circuits
28
Source: Knickerbocker,IBM Journal of Research and Development. Vol. 52 No. 6 2008
29. 3D-IC technology for future detectors, FNAL, 02/17/2009
Summary
3D-IC offers new approaches to old problems in detector development.
New high density circuit bonding techniques, wafer thinning, and
sub sub-m μm size TSVs provide new opportunities for the detector designer
designer.
Fermilab has been working with two different vendors for 3D chip
fabrication. MIT LL is a via last SOI process using oxide wafer bonding. Tezzaron
i i fi i C C f b di
is a via first CMOS process using Cu-Cu wafer bonding.
Recently a new (third) 3D-IC technique has been explored with a new pixel chip
submission to the OKI-SOI run within the SOIPIX collaboration that is based in
KEK, Japan. The new bonding is based on ZyCube.
Chips are still in fab, except the first device, VIP1, that was fabricated in 2007; The
prototype was tested and despite poor yield actual functionality was demonstrated
The 3D-IC seems to be the avenue for future development in
μelectronics industry we hope to be able to maintain our RD program
Packaging industry is under revolution because of the transistor
29
g g y
scaling era is ending and 3D-IC era with TSVs is beginning.
30. 3D-IC technology for future detectors, FNAL, 02/17/2009
Backup1:
3D bonding technology to replace bump
bonds in hybrid pixel assemblies.
FUSION BONDING
7 um dia CuSn
pillar on 20
micron pitch
Bonding options being explored by
Fermilab:
CuSn eutectic CuSn
bond
- with RTI
- Direct bond interconnect (DBI) using ““magic
metal”” with Ziptronix. 3um pitch possible
cross
section
- CuCu fusion with Tezzaron
Excellent strength and yield obtained with
7 CuSn pillar on a 20 micron pitch
25 Pixel
Sensors
thinned
um pitch.
However 10 um of CuSn covering 75% of
bond area would represents Xo=0.075. To25o sensors
bonded
to BTEV
ROIC
to 100 um
after
chip to
wafer
high for some HEP applications.
CuCu fusion and DBI offer the lowest
30
mass bond required by many HEP wafer
bonding
experiments.
31. 3D-IC technology for future detectors, FNAL, 02/17/2009
Backup2:
1) Bonding between Die/Wafers
Fermilab
experience
Electrical and mechanical bonds
) g
a) Adhesive bond
b) Oxide bond (SiO2 to SiO2)
Polymer
(BCB)
SiO2
c) CuSn Eutectic
2
bond
Cu Sn
Cu3Sn
( i b d)
(MIT LL)
(RTI)
d) Cu thermocompression
eutectic bond)
Cu
Cu
bond
(Tezzaron)
e) DBI (Direct Bond Interconnect)
Metal
For (a) and (b) electrical connections between layers are
Oxide
bond
Metal bond
(Ziptronix)
b), formed after bonding. For (c), (d), and (e), the electrical
and mechanical bonds are formed at the same time.
31
32. 3D-IC technology for future detectors, FNAL, 02/17/2009
Backup3
VIP1 designed in 3 tier MIT-LL 0.18 μm SOI process
Pixel Layout
g μ p
no sensor
VIP1 / VIP2a
Pixel block diagram
VIP1 found to be functional.
Architecture proven but:
VIP1 Yield was low.
VIP2a designed to improve yield
VIP1
Test
R lt through: increased sizes of FD SoI
transistors, improved power distribution,
wider traces and redundant vias among
other things at expense of larger, 30
um, pixel size
Result
32
VIP2a is in fabrication
Focus has shifted from working in FD
SOI to bulk CMOS processes