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THREE-DIMENSIONAL
INTEGRATED CIRCUIT
ARQAM FAZAL MIRZA
ROLL NO.:-1140434009
EC-3, BBD UNIVERSITY
1
CONTENTS
 INTRODUCTION
 WHAT IS TSV?
 MAKING OF TSV
 MANUFACTURING OF 3D-IC
 3D VS 2D CIRCUIT
 WHY 3D OVER 2D-CIRCUIT?
 CHALLENGES
 NOTABLE 3D CHIPS
 CONCLUSION
 REFERENCES
2
INTRODUCTION
 3D-IC is a circuit formed by the stacking silicon wafers/dies
and interconnecting them vertically with the help of TSVs so
they behave as a single device to achieve performance
improvements at reduced power .
Fig. 1
3
INTRODUCTION
 3D-ICs offer significant improvements over 2D circuits as it
reduces both the footprint and interconnect length without
shrinking the resistors
Fig.2
4
WHAT IS TSV?
 Through-silicon via, in electronic engineering, is a vertical
electrical connection passing completely through a silicon
wafer/die.
 It allows to establish an electrical connection from the active
side to the backside of the die/wafer.
Fig.3
5
WHAT IS TSV?
 TSVs are a high performance interconnect techniques used as
an alternative to wire-bond and flip chips to create 3D
packages and 3D integrated circuits because the density of vias
is substantially higher, and because the length of connections
in shorter.
Fig.4 6
MAKING OF TSV
In order to make a TSV, the following processes are done :-
• Via Drilling
• Via Filling
• Chemical and mechanical polishing
• TSV revealing
7
MAKING OF TSV
8
Fig.5
MANUFACTURING OF 3D-IC
• A 3D-IC can be manufactured in the same manner as a normal
2D-Circuit
• Multiple 2D-Circuits are formed in order to form a 3D-IC
• Then these multiple circuits are joined together using the TSV
technology
Fig.6
9
MANUFACTURING OF 3D-IC
• Only one power supply is needed for one 3D-IC
• Different power supplies for different layers are not required
Fig.7
10
3D VS 2D CIRCUIT
2D 3D DIFFEREN
CE (%)
• Footprint
(in sq.mm)
2.54 1.31 -48.4
• Wirelength
(in mm)
3.41 3.19 -6.4
• Power (in
mW)
172.9 164.0 -5.1
11
WHY 3D-IC OVER 2D-IC?
• FOOTPRINT
• COST
• SHORTER INTERCONNECT
• POWER
12
CHALLENGES
• YIELD
• HEAT
• DESIGN COMPLEXITY
• TESTING
13
NOTABLE 3D-CHIPS
• Tezzeron Semiconductors built a 3D chip in 2004. The first
chip was a simple memory register, but the most notable being
an 8051 processor/memory stack.
• INTEL presented a 3D version of Pentium 4 processor named
as Pentium 4 Remix in 2004.
• Samsung announced in December, 2008 that it has started the
mass production of 8GB memory using 3D technology.
14
CONCLUSION
• 3D technology is a technology which will bring a revolution in
the industry.
• In an era where smaller devices are preferred over large
devices, a 3D-technology can help multiple circuits fit into a
space where only one 2D-Circuit can fit.
• Imagine how great it will be when a 64 or 128 GB of memory
can be installed in a device which occupies a space less than a
8 GB memory.
15
REFERENCES
• “ELECTRONIC DESIGN AUTOMATION FOR IC
IMPLEMENTATION CIRCUIT DESIGN, AND PROCESS
TECHNOLOGY” BY- LUCIANO LAVANGO (CRC PRESS)
• “TSV(THROUGH SILICON VIA)” BY- ALKITA ELPIDA
MEMORY ISSUED ON 08/11/2008
• “DEVELOPMENT OF CHIP STACKING TECHNOLOGY
USING THROUGH ELECTRODES” VOL.74#3 BY-OKI
TECHNICAL REVIEW NOV.,2007 ISSUE
16
QUERIES??
17
THANK YOU
18

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Three dimensional integrated circuit

  • 1. THREE-DIMENSIONAL INTEGRATED CIRCUIT ARQAM FAZAL MIRZA ROLL NO.:-1140434009 EC-3, BBD UNIVERSITY 1
  • 2. CONTENTS  INTRODUCTION  WHAT IS TSV?  MAKING OF TSV  MANUFACTURING OF 3D-IC  3D VS 2D CIRCUIT  WHY 3D OVER 2D-CIRCUIT?  CHALLENGES  NOTABLE 3D CHIPS  CONCLUSION  REFERENCES 2
  • 3. INTRODUCTION  3D-IC is a circuit formed by the stacking silicon wafers/dies and interconnecting them vertically with the help of TSVs so they behave as a single device to achieve performance improvements at reduced power . Fig. 1 3
  • 4. INTRODUCTION  3D-ICs offer significant improvements over 2D circuits as it reduces both the footprint and interconnect length without shrinking the resistors Fig.2 4
  • 5. WHAT IS TSV?  Through-silicon via, in electronic engineering, is a vertical electrical connection passing completely through a silicon wafer/die.  It allows to establish an electrical connection from the active side to the backside of the die/wafer. Fig.3 5
  • 6. WHAT IS TSV?  TSVs are a high performance interconnect techniques used as an alternative to wire-bond and flip chips to create 3D packages and 3D integrated circuits because the density of vias is substantially higher, and because the length of connections in shorter. Fig.4 6
  • 7. MAKING OF TSV In order to make a TSV, the following processes are done :- • Via Drilling • Via Filling • Chemical and mechanical polishing • TSV revealing 7
  • 9. MANUFACTURING OF 3D-IC • A 3D-IC can be manufactured in the same manner as a normal 2D-Circuit • Multiple 2D-Circuits are formed in order to form a 3D-IC • Then these multiple circuits are joined together using the TSV technology Fig.6 9
  • 10. MANUFACTURING OF 3D-IC • Only one power supply is needed for one 3D-IC • Different power supplies for different layers are not required Fig.7 10
  • 11. 3D VS 2D CIRCUIT 2D 3D DIFFEREN CE (%) • Footprint (in sq.mm) 2.54 1.31 -48.4 • Wirelength (in mm) 3.41 3.19 -6.4 • Power (in mW) 172.9 164.0 -5.1 11
  • 12. WHY 3D-IC OVER 2D-IC? • FOOTPRINT • COST • SHORTER INTERCONNECT • POWER 12
  • 13. CHALLENGES • YIELD • HEAT • DESIGN COMPLEXITY • TESTING 13
  • 14. NOTABLE 3D-CHIPS • Tezzeron Semiconductors built a 3D chip in 2004. The first chip was a simple memory register, but the most notable being an 8051 processor/memory stack. • INTEL presented a 3D version of Pentium 4 processor named as Pentium 4 Remix in 2004. • Samsung announced in December, 2008 that it has started the mass production of 8GB memory using 3D technology. 14
  • 15. CONCLUSION • 3D technology is a technology which will bring a revolution in the industry. • In an era where smaller devices are preferred over large devices, a 3D-technology can help multiple circuits fit into a space where only one 2D-Circuit can fit. • Imagine how great it will be when a 64 or 128 GB of memory can be installed in a device which occupies a space less than a 8 GB memory. 15
  • 16. REFERENCES • “ELECTRONIC DESIGN AUTOMATION FOR IC IMPLEMENTATION CIRCUIT DESIGN, AND PROCESS TECHNOLOGY” BY- LUCIANO LAVANGO (CRC PRESS) • “TSV(THROUGH SILICON VIA)” BY- ALKITA ELPIDA MEMORY ISSUED ON 08/11/2008 • “DEVELOPMENT OF CHIP STACKING TECHNOLOGY USING THROUGH ELECTRODES” VOL.74#3 BY-OKI TECHNICAL REVIEW NOV.,2007 ISSUE 16