Rf technology 5-8-2011-final-revised

RF MCM Technology and Future
Microelectronics Capabilities
By Tom Terlizzi
Vice President
Aeroflex Plainview
May 10, 2011 Arlington, Va

2
Purpose
• Discuss how to navigate in the Military RF Multi Chip Module
(MCM) arena using commercial technology.
• Discuss how to develop a successful strategy to
support typical Military Product Life Cycles
in conflict with Moore’s Law.
• Discuss the Future of Microelectronics Technology

3
Outline
• What’s Moore’s Law & What does it mean?
• Background-COTS (Commercial Off The Shelf) :
A Double Edged Sword?
• What’s RF and Where is it?
• Design and Development of a Microprocessor MCM
• Design and Development of a GaN RF MCM
•
• Where are we going in the future?
• Summary/ Conclusions

4
MooreMoore’s Law’s Law
• Moore's Law predicts a doubling of transistor density ~ 18
months. (Originally every year, then every two years)
• Microprocessor becomes a System on Chip (SOC)
Number of
Transistors

5
0%
5%
10%
15%
20%
25%
30%
35%
40%
1955 1965 1975 1985 1995 1999 2005 2010 2015
Percentage of Semiconductor Production Designated for Military Use By $ ValuePercentage of Semiconductor Production Designated for Military Use By $ Value
Source “Revolution in Miniature”
Braun & MacDonald
(*2005 Estimate 0.3% ICE Walt Lahti
** 2010 Estimate 0.3% + T.Terlizzi
Background: COTS: A Double Edged Sword?Background: COTS: A Double Edged Sword?
2010 $304 Billion
Semiconductor
Sales
~$1 Billion
“Military” Sales

6

8
The B52 will be ~90 Years Old here

9
It Used to Be That The PilotsIt Used to Be That The Pilots
Were Older Than The PlanesWere Older Than The Planes

Now The Planes Are Older Than The Parents
And Grandparents Of The Pilots
6

11
• GOAL: Take advantage of technological advances in the
commercial and industrial component environment.
• Reduce costs at both the component and system level.
• Gain access to, “Cutting Edge Technology!”
• Reduce component and system lead times.
• REALITY: Accelerated exposure to component
obsolescence for major OEM’s and a new acronym
DMS (Diminished Manufacturing Sources).
• COTS products Life Cycles prove to be incompatible with military
program Life Cycles and funding requirements; obsolescence
increases.

12
Overview RFOverview RF
• Radio Frequency
• Radar
•Radio Detection
And Ranging
• Electronic Surveillance
• Communications
• Countermeasures
• Jamming

14
Design and Development of 64 Bit MIPS MCMDesign and Development of 64 Bit MIPS MCM
1. Microprocessor MCM Block Diagram
2. Qualification of Key Components
3. Conservative-Robust HTCC Package Technology
4. Electrical Analysis
5. Thermal Analysis
6. Mechanical Analysis
7. Technology Insertion

15
Block Diagram of a 64 Bit MIPS MCMBlock Diagram of a 64 Bit MIPS MCM

16
Qualification of Key ComponentsQualification of Key Components
• All memories and microprocessors had “commercial”
qualification data for operating life (1000 hours) at 1250
C but
endpoints were typical over the 00
to 700
C temperature range
• Tests were done using a microprocessor only over full military
temperature range (-550
C to 1250
C) in HTCC package.
• Qualification for vibration and shock was done at the system
level

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Mechanically HTCC is SuperiorMechanically HTCC is Superior
• High Thermal conductivity ( 16 w/mK vs 2 w/mK)
• Higher Flexural strength
• High dielectric strength
• Cu-Ag Braze – Well established, robust braze
• Ceramic does not react during brazing process
• Vendor controls tape manufacturing process
• Wide variety of tape thickness are available

18
Package Material Selection Depends on Several FactorsPackage Material Selection Depends on Several Factors11
“Optimal”
Manufacturable
Package Design
Well-defined
Application
Accurate
Material Data
over
frequency
Well-understood
Process
variations
Tradeoffs
Price
Delivery
Performance
Manufacturing
Design Guidelines
Good Simulation
tools
Measurement
validation
“What is the best material to use?”
SMT RF packages
LTCC MCM package
1-Slide courtesy Roy Webb - Kyocera San Diego1-Slide courtesy Roy Webb - Kyocera San Diego

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ElectricalElectrical
• Our MCM 66 Mhz clock rate with an estimated 3.0 nanoseconds.
• The system pulse rise time is 3.0 nanoseconds, the required
bandwidth is 116.6 MHz.
• To reproduce the rise time with minimal distortion (<2%) would
require passing the 5th harmonic or 5 x 116.6 MHz or 583.3 MHz
• The resistance of a circuit with an 8 mil line width which is two
inches long can be calculated as follows:
R = ρ x l/w
where:
ρ = conductor sheet resistivity
l = length of conductor
w = width of conductor
• If the sheet resistivity (ρ) is .015 ohms/□, then R = 3.75 ohms.
Solving for the maximum capacitance results in CMAX = 72.6 pf
or 36.3 pf / inch or 14.28 pf / cm.
“COTS Approach to Military Microprocessor MCMs” T.Terlizzi –
Military, Aerospace, Space
and Homeland Security:
Packaging Issues and Applications IMAPS 2003

20
Electrical AnalysisElectrical Analysis

21
Thermal AnalysisThermal Analysis

22

23

24
Mechanical AnalysisMechanical Analysis

25
Thin Film Interposer -Thin Film Interposer - “Picture Frame”“Picture Frame”
1 mil Aluminum
wire Bonds from
R4400
Microprocessor
die to the thin
film interposer
1 mil Gold
wires from
the thin film
interposer to
the cofired
ceramic
package- two
tier bonding
shelf
Thin film
on
ceramic
“picture
frame”
R4400
Die

26
MIPS uP MCM MILESTONESMIPS uP MCM MILESTONES
1608-XX & 1638-XX
4430SC-F10 & 4431SC-F10
5271/5272SC-F10
Same Footprint
•1992 1608 Initial Delivery
•1993: Introduced (256K of L2 cache)
•1994: 1st obsolescence; uP die
•1995: 2nd obsolescence; memory die
•1996: Introduced (1M of L2 Cache)
•1997: 3rd obsolescence; uP die
Introduced window frame
•1998: LRIP Production Orders
EOL of R4400 uP (die banking)
•1999: R4430 production; Prototype of
RM5271 base part (2M of L2 Cache )
•2000/2001:Continued 4430SC production
•EMD Phase of RM5271 part
•2002/2010 Continued R4400 & 5271 production
•2012 EOL 5272SC
280 Lead CQFP (F10)

27
ACT-5271SC-F10-M21C
Cache
TAG RAM
2 MB SC: (Sync Burst
Cache RAM), 4ea
CPU Cycle
FIFO: 2 FPGA
PLL CLK Driver MIPS uP: RM5271
Control CPLD
Configuration
Serial PROM:
FPGA
5271/5272 64 bit MIPs Microprocessor MCM5271/5272 64 bit MIPs Microprocessor MCM
http://www.aeroflex.com/ams/pagesproduct
/datasheets/AssySvcsPlainview.pdf

28
MIPS uP Standard ProductsMIPS uP Standard Products MILESTONESMILESTONES
208 Lead CQFP
(F17 or F24)
5260PC 5270PC
7000SC 7000ASC
7965A 668 Mhz Pipeline Clock
(100Mhz System Clock) Same Footprint-change core voltage
•1997: Announce MIPS Roadmap based
on QED RM52XX & RM7000 family
•1997: Ship 5260PC-F17 Prototype parts
•1998: Ship 5270PC-F24 Mil-Temp parts
LRIP for Mil-Screened 5260PC-F17
•1998: Ship 7000PC-F24 Mil-Temp parts
•1999: Design wins for 7000SC-F17
• 2000/2002: Production Phase 5260PC-F17
7000SC-F172001
•Die Bank 5260PC
•2003 7000ASC 1st Design Win
•2005 7965A 1st Design Win
•2011 Production Phase 7965A
•2012 EOL 7000SC –Maturity 7000ASC

29
Aeroflex Circuit Technology
Real Time evaluation
of new processors
High-Rel performance
feedback
Derivative design input
Utilization of advanced
processor technology
Early access to future
processor information
• MIPS MCM Architecture
• High-Performance / High-
Reliability Screening
• ( MIL-883)
• High-end Integrated L2
& L3 Cache MCM Designs
• Integrated Products
w/Configurable Peripherals
PMC-SIERRA
• MIPS Architecture
• High-end CPU Design
• Core & Derivative Designs
• Die Source
• Technical Support
• MIPS Processor Sales
Competencies The MIPS Architecture
A Partnership for Success
• High Density Flash / SRAM /
SDRAM / EEPROM MCMs
• Market & Infrastructure
Development
• Sales / Service / Technical
Support For MIL/Aero market
Support Partners
MIPS
• MIPS Hardware / Software Design
• MIPS RISC Microprocessor
Development Board Designer &
Supplier
• Technical Support / Training

30
““Spinoff Products” STAR VIISpinoff Products” STAR VII
Single Board Computer (Single Board Computer (TOP SIDE)TOP SIDE)
ACT7000SC with
cavity down

31
Design and Development ofDesign and Development of
GaN Wide Band Amplifier for Space ApplicationsGaN Wide Band Amplifier for Space Applications
1. Amplifier Block Diagram
2. Qualification of Key Components
3. Conservative-Robust Package Technology
4. Electrical Analysis
5. Thermal Analysis
6. Mechanical Analysis

32
Block Diagram & Outline DrawingBlock Diagram & Outline Drawing

33
Broadband GaN Amplifier PA020180-3922Broadband GaN Amplifier PA020180-3922
• 2GHz to18GHz 8 Watts
• Psat 39 dBm
• 23 dB & 35dB typical Gain
• Compact size
• 2.7” x 1.6” x 0.42”

34
Aeroflex in SpaceAeroflex in Space
• Aeroflex Plainview, Inc is a MIL-PRF-38534 Class “K”
qualified manufacturer, as well ISO-9001-2000 certified
with AS9100-2004, Rev B performing all manufacturing,
screening and element evaluation in accordance with the
Mil-Performance requirements on standard and custom
products.
• Aeroflex has manufactured and delivered thousands of
Class “K” Level Space Application Multi-Chip Modules
(MCMs), Hybrids, ASICs and MMICs to major commercial
and military satellite OEMs such as Boeing Satellite
Systems (BSS), Northrop Grumman Aerospace Systems
(NGAS), Space Systems/ Loral (SS/L), Honeywell and
Lockheed Martin Space Systems Division (LMSSD)
• Aeroflex has >25 years expertise in designing, testing and
screening of Radiation Hardened RF components.

35
Space Level Class S Cree GaN Die screening & QualificationSpace Level Class S Cree GaN Die screening & Qualification
MIL-PRF-38534E APPENDIX C
1/ MIL-PRF-38534 methods
Final electricalXX
10 (0) wires
or
20 (1) wires
D2011Wire bond evaluationXX5
240 hours
minimum at
+125 ºC,
biased
1015Burn -inX
Post burn -in electricalX
1000 hours
minimum at
+125 ºC,
biased
1005Steady -state lifeX
Interim electricalX
100 %Element electricalXX1
100 %A2010
2072 1/
2073 1/
Element visualXX2
2018
2077 1/
1010
2010
2072 1/
2073 1/
Method
MIL-STD-883
C
A
ConditionHK
5 (0) die per waferSEMX6
10 (0)Temperature cyclingX4
10 (0)Internal visualXX3
Quantity
(accept number)
TestClassSubgroup
Final electricalXX
10 (0) wires
or
20 (1) wires
D2011Wire bond evaluationXX5
240 hours
minimum at
+125 ºC,
biased
1015Burn -inX
Post burn -in electricalX
1000 hours
minimum at
+125 ºC,
biased
1005Steady -state lifeX
Interim electricalX
100 %Element electricalXX1
100 %A2010
2072 1/
2073 1/
Element visualXX2
2018
2077 1/
1010
2010
2072 1/
2073 1/
Method
MIL-STD-883
C
A
ConditionHK
5 (0) die per waferSEMX6
10 (0)Temperature cyclingX4
10 (0)Internal visualXX3
Quantity
(accept number)
TestClassSubgroup

36
Cree GaN die Space Qualification ProcessCree GaN die Space Qualification Process
Wafer Fabrication in done in a certified clean room (Sub Group 1)Wafer Fabrication in done in a certified clean room (Sub Group 1)
Fabricated wafers are 100% DC testedFabricated wafers are 100% DC tested
CreeCree’s internal procedures for ESD and wafer handling are strictly followed. The tested’s internal procedures for ESD and wafer handling are strictly followed. The tested
wafer is diced (Sub Group 1)wafer is diced (Sub Group 1)
Each die is visually inspected 100% to ensure conformance toEach die is visually inspected 100% to ensure conformance to
the applicable die related requirements of MIL-STD-883the applicable die related requirements of MIL-STD-883
Method 2010 condition A=Class K: Internal visual forMethod 2010 condition A=Class K: Internal visual for
Multichip Modules (MCM) (Sub Group 2)Multichip Modules (MCM) (Sub Group 2)
Test FixtureTest Fixture
Assembly:Assembly:
(sub Group 3 and 4)(sub Group 3 and 4)
Wire bondWire bond
evaluationevaluation
(Sub Group 5)(Sub Group 5)
SEM (Scanning Electron Microscopy)SEM (Scanning Electron Microscopy)
A SEM inspection is performed to provide aA SEM inspection is performed to provide a
means of judging the quality of the devicemeans of judging the quality of the device
metallization. The test is made in accordancemetallization. The test is made in accordance
with MIL-STD-883 method 2018 or 2077with MIL-STD-883 method 2018 or 2077
(Sub Group 6)(Sub Group 6)

37
Cree Quality and ReliabilityCree Quality and Reliability

38
Cree Quality and ReliabilityCree Quality and Reliability

39
GaN Radiation Testing (Yale University)GaN Radiation Testing (Yale University)

40
GaN Radiation Testing SetupGaN Radiation Testing Setup

41
GaN Radiation Testing ResultsGaN Radiation Testing Results
Nitronex25015
Serial # 1
0
0.02
0.04
0.06
0.08
0.1
0.12
-2.5 -2.3 -2.1 -1.9 -1.7 -1.5 -1.3 VGSVolts
IDAmps
4.2 Mrad
0 rad
17.4 Mrad
200 Mrads of Protons had no effect – switching 20 V 0.1 Amp
Parts still activated after 7 months

42

43

44
NASA Radiation Testing GaN on SiCNASA Radiation Testing GaN on SiC

45
NASA Radiation Testing ResultsNASA Radiation Testing Results

46
NASA Radiation Testing ResultsNASA Radiation Testing Results

49
MechanicalMechanical
• Aluminum Housing with soldered hermetic “feed thru”
• Laser welding for a hermetic enclosure
• GaN die soldered to a Silvar carrier; Carrier mechanically
screwed to the Aluminum housing.
• Thin film alumina ceramic microstrip
• SMT components on PWB for biasing

50
ARX designs & Assembly
Military & Hi-Rel RF
products for use in
high-performance
demanding environments
ARX Military RF Products
Volume provides
architectural
viability
Design Military & Hi-Rel
Products that leverage off
high volume commercial
markets
ensuring a viable
source of supply
Design
Software
& Models
Hardware
Hermetic
Package
Suppliers
Military
Applications
SatelliteAvionics Systems
The Customer
Advanced MCM
Technology
Performance
drives features
Smart Munitions
High-performance
processors
ARX
Technology
Driver
ARX
Technology
Driver
Partner
Resources
RF
Fabs

51
Where are we going?Where are we going?
• New RF Integrated Circuit Technologies will lead to
• more integration
• smaller, lightweight, more reliable components
• Digital and Analog RF functions are merging
• Generation of New Advanced Semiconductor Materials
• Improvement in Silicon RF power amplifiers
• Improvements in GaAs technology
• 3-D Packaging – TSV “Thru Silicon Via”
• COB Chip on Board
• RF MEMs switches and oscillators
• RF friendly Plastic Packaging
• Low temperature ALD (Atomic Layer Deposition)

52
Cell Phone TechnologyCell Phone Technology
Motorola Atrix 4G Teardown
http://www.ifixit.com/Teardown/Mot
orola-Atrix-4G-Teardown/4964/1

53
Integration using SiGe and GaNIntegration using SiGe and GaN
““Components for Interoperability of High Power RFComponents for Interoperability of High Power RF
and Microwave Systems” Dr. W Chappell Purdue-Darpa-Army CERDECand Microwave Systems” Dr. W Chappell Purdue-Darpa-Army CERDEC

54
Commercial GPS ReceiverCommercial GPS Receiver

55
International Technology Roadmap forInternational Technology Roadmap for
Semiconductors (ITRS)Semiconductors (ITRS)
Year
Parameter
2003 2004 2005 2008 2011 2014
Technology(nm) 120 110 100 70 50 35
# of Transistors 95.2M 145M 190M 539M 1,523M 4,308M
Clock Frequency 1,724 MHz 1,857 MHz 2,000 MHz 2,500 MHz 3,000 MHz 3,600 MHz
Chip Area (mm2
) 372 372 408 468 536 615
Wiring Levels 8 8 8-9 9 9-10 10
Pitch(L/I/G)(nm) 330/420/690 295/375/620 265/340/560 185/240/390 130/165/275 95/115/190
A/R (L/I/G) 1.6/2.2/2.8 1.6/2.3/2.8 1.7/2.4/2.8 1.9/2.5/2.9 2.1/2.7/3.0 2.3/2.9/3.1
Dielectric Const. 2.2-2.7 2.2-2.7 1.6-2.2 1.5 <1.5 <1.5
This data is from the ITRS Roadmap on interconnects
http://www.itrs.net/

56
Systems on Chip (SOC)Systems on Chip (SOC)

57
““More than Moore”More than Moore”
• “Moore than Moore’s” Law scales non digital functions like RF
communications, Passive Components, Sensors,
Actuators to migrate to SOC, SOP, and SIP

58
DefinitionsDefinitions
http://www.chipscalereview.com/issues/0104/article.php?type=feature&article=f8

59
System on Package (SOP)System on Package (SOP)
“Going Vertical from More than More
to even Mo(o)re” Dr. M Swaminathan
Ga. Tech.

60
Aeroflex Chip on Board (COB)Aeroflex Chip on Board (COB)
DC-DC Plug-and-Play Low-Voltage Power
Supply, Non-RadHard +28V Input. Output: +5V,
+3.3V, +2.5V, 70W – ACT8616
http://www.aeroflex.com/ams/pagesproduct
/datasheets/AssySvcsPlainview.pdf

61
Advantages of GaN Semiconductor MaterialAdvantages of GaN Semiconductor Material
• GaN is the most promising semiconductor material for
microwave power devices for space applications
• Higher power density – demonstrated 10W/mm @ X-band
• High added power efficiency – 60% @ X- band
• Broadband response - Measured response from 1-20GHz
• High Breakdown voltage (3.4eV) – 5X GaAs
(for space applications - better derating criteria)
• Higher operating junction temperature (up to 275ºC) with
2.2M hours operating life is 225ºC
• Bias Voltage of up to 50V (+28V)
• Excellent Radiation Tolerance

62
Advantages of GaN SemiconductorAdvantages of GaN Semiconductor
MaterialMaterial

63
3-D Packaging3-D Packaging
1950’s
Project Tinker Toy
Micro Module
1960’s
Cord Wood Modules
TSV

64
SummarySummary
• COTS is here to stay…The definition continues to change
• The markets for semiconductor devices are driven
exclusively by commercial and consumer industries
New product are being designed to perform in commercial or
industrial temperature ranges only
• The military will no longer have dedicated component
sources…Military spending accounts for only 0.3% of total US
semiconductor sales in 2010-2015 time period
• Component obsolescence presents a serious challenge
to both Component Manufacturers and OEM’s
• Component obsolescence issues will only increase
• i.e. counterfeit parts

65
ConclusionsConclusions
• COTS is here to stay...
• “Military RF MCM,” suppliers can develop a successful
strategy to support typical military Product Life Cycles.
• Component suppliers must be flexibleflexible and able to adapt:
the market is constantly changing…
New IC sources and new semiconductor technology
Die Shrinks
Evolving Packaging Technology
“Alphabet Soup” of new fabless companies
With “A Proactive Approach” to develop ROBUST
technology a RF MCM Suppliers can be successful in the
COTS world

66
YOU’RE NOT
GETTING OLDER
YOU’RE GETTING
BETTER

67
“You’re not getting older,
you’re getting better”

Rf technology 5-8-2011-final-revised

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