The document presents a detailed device modeling report for a MOSFET (2SK4064LS) manufactured by Sanyo, incorporating various electrical parameters and characteristics. It includes simulation results comparing measurement and modeling data for transconductance, gate charge, capacitance, switching time, and output characteristics alongside associated errors. The report emphasizes the accuracy of the simulations across different operational conditions and characteristics.

1. Device Modeling Report
COMPONENTS: MOSFET (Professional Model)
PART NUMBER: 2SK4064LS
MANUFACTURER: SANYO
REMARK: Body Diode (Professional Model)
Bee Technologies Inc.
All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
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2. MOSFET MODEL
PSpice model
Model description
parameter
LEVEL
L Channel Length
W Channel Width
KP Transconductance
RS Source Ohmic Resistance
RD Ohmic Drain Resistance
VTO Zero-bias Threshold Voltage
RDS Drain-Source Shunt Resistance
TOX Gate Oxide Thickness
CGSO Zero-bias Gate-Source Capacitance
CGDO Zero-bias Gate-Drain Capacitance
CBD Zero-bias Bulk-Drain Junction Capacitance
MJ Bulk Junction Grading Coefficient
PB Bulk Junction Potential
FC Bulk Junction Forward-bias Capacitance Coefficient
RG Gate Ohmic Resistance
IS Bulk Junction Saturation Current
N Bulk Junction Emission Coefficient
RB Bulk Series Resistance
PHI Surface Inversion Potential
GAMMA Body-effect Parameter
DELTA Width effect on Threshold Voltage
ETA Static Feedback on Threshold Voltage
THETA Mobility Modulation
KAPPA Saturation Field Factor
VMAX Maximum Drift Velocity of Carriers
XJ Metallurgical Junction Depth
UO Surface Mobility
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3. Transconductance Characteristic
Circuit Simulation Result
Comparison table
gfs (s)
Id(A) Error (%)
Measurement Simulation
1 3.750 3.933 4.88
2 5.300 5.473 3.26
5 8.200 8.388 2.29
10 11.250 11.465 1.91
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4. Vgs-Id Characteristic
Circuit Simulation result
25A
20A
15A
10A
5A
0A
0V 2V 4V 6V 8V 10V 12V 14V
I(V3)
V_V1
Evaluation circuit
V3
0Vdc
V2
U1
2SK4064LS
20
V1
0Vdc
0
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5. Comparison Graph
Circuit Simulation Result
Simulation Result
VGS(V)
ID(A) Error (%)
Measurement Simulation
1 5.400 5.316 -1.556
2 5.600 5.528 -1.286
5 6.000 5.959 -0.683
10 6.525 6.462 -0.966
20 7.250 7.202 -0.662
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6. Rds(on) Characteristic
Circuit Simulation result
6.0A
4.0A
2.0A
0A
0V 1.0V 2.0V 2.7V
I(V3)
V_VDS
Evaluation circuit
V3
0Vdc
VDS
U1
2SK4064LS 0Vdc
V1
15
0
Simulation Result
ID = 6A, VGS = 15V Measurement Simulation Error (%)
R DS (on)  0.450 0.450 0.067
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7. Gate Charge Characteristic
Circuit Simulation result
10V
8V
6V
4V
2V
0V
0 10n 20n 30n 40n
V(W1:3)
Time*1mA
Evaluation circuit
I2
U1 D2
2SK4064LS Dbreak 12
PER = 1000u W1
PW = 600u +
TF = 5n VDD
TR = 5n -
TD = 0 I1 W
I2 = 1m IOFF = 1mA 200
I1 = 0 ION = 0uA
0
Simulation Result
VDD=200V, ID=12A,
Measurement Simulation Error (%)
VGS=10V
Qgs nC 14.000 14.039 0.279
Qgd nC 12.500 12.596 0.768
Qg nC 37.000 37.042 0.114
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8. Capacitance Characteristic
Measurement
Simulation
Simulation Result
Cbd (pF)
VDS (V) Error (%)
Measurement Simulation
5 460.00 458.000 -0.43
10 321.00 326.000 1.56
20 230.00 231.000 0.43
30 191.00 188.000 -1.57
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9. Switching Time Characteristic
Circuit Simulation result
12V 240V
1 2
10V 200V
8V 160V
6V 120V
4V 80V
2V 40V
>>
0V 0V
0.5us 1.0us 1.5us
1 V(U1:G) 2 V(U1:D)
Time
Evaluation circuit
L2 RL
50nH 29
R1 L1 U1
TK14A55D
VDD
V1 = 0 30nH 205Vdc
V2 = 20 V2 50
TD = 1u
TR = 5n R2
TF = 5n 50
PW = 10u
PER = 20u
0
Simulation Result
ID=6A, VDD=200V
Measurement Simulation Error(%)
VGS=0/10V
td(on) ns 52.000 52.133 0.256
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10. Output Characteristic
Circuit Simulation result
35A
10 8
30A
9
55
25A
20A
7
55
15A
10A
6
5A
VGS=5V
0A
0V 5V 10V 15V 20V 25V 30V
I(V3)
V_V2
Evaluation circuit
V3
0Vdc
U1 V2
2SK4064LS
V1 30
0
0
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11. Output Characteristics Reference
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12. BODY DIODE SPICE MODEL
Forward Current Characteristic
Circuit Simulation Result
100A
10A
1.0A
100mA
10mA
0V 0.4V 0.8V 1.2V 1.6V
I(Vsense)
V_VSD
Evaluation Circuit
Vsense
0Vdc
VSD U1
2SK4064LS
0
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13. Comparison Graph
Circuit Simulation Result
Simulation Result
VSD(V)
IDR(A) %Error
Measurement Simulation
0.01 0.555 0.553 -0.36
0.02 0.574 0.573 -0.17
0.05 0.598 0.599 0.17
0.10 0.618 0.620 0.32
0.20 0.640 0.641 0.16
0.50 0.674 0.672 -0.30
1.00 0.700 0.698 -0.29
2.00 0.730 0.732 0.27
5.00 0.800 0.797 -0.38
10.00 0.880 0.882 0.23
20.00 1.030 1.029 -0.10
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14. Reverse Recovery Characteristics
Circuit Simulation Result
400mA
300mA
200mA
100mA
-0mA
-100mA
-200mA
-300mA
-400mA
12us 16us 20us 24us 28us 32us 36us 40us 44us 48us
I(R1)
Time
Evaluation Circuit
R1
50
V1 = -9.45v V1 U1
V2 = 10.65v D2SK4064LS_P
TD = 0us
TR = 10ns
TF = 10ns
PW = 32us
PER = 50us
0
Compare Measurement vs. Simulation
Measurement Simulation Error (%)
trj us 1.040 1.047 0.67
trb us 1.440 1.443 0.21
trr us 2.480 2.490 0.40
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15. Reverse Recovery Characteristic Reference
Measurement
Trj= 1.04 (us)
Trb= 1.44 (us)
Conditions:Ifwd=lrev=0.2(A),Rl=50
Example
Relation between trj and trb
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