This document presents a detailed device modeling report for the power MOSFET model 2SK3561 from Toshiba, including its parameters, circuit simulation results, and characteristic evaluations. It includes graphs and data on transconductance, gate charge, capacitance, switching time, and other electrical properties, alongside measurement comparisons. Additionally, it includes information on the body diode and ESD protection diode characteristics.

1. Device Modeling Report
COMPONENTS: Power MOSFET (Model parameter)
PART NUMBER: 2SK3561
MANUFACTURER: TOSHIBA
Body Diode (Model parameter) / ESD Protection Diode
Bee Technologies Inc.
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006

2. MOSFET MODEL
PSpice model
Model description
parameter
LEVEL
L Channel Length
W Channel Width
KP Transconductance
RS Source Ohmic Resistance
RD Ohmic Drain Resistance
VTO Zero-bias Threshold Voltage
RDS Drain-Source Shunt Resistance
TOX Gate Oxide Thickness
CGSO Zero-bias Gate-Source Capacitance
CGDO Zero-bias Gate-Drain Capacitance
CBD Zero-bias Bulk-Drain Junction Capacitance
MJ Bulk Junction Grading Coefficient
PB Bulk Junction Potential
FC Bulk Junction Forward-bias Capacitance Coefficient
RG Gate Ohmic Resistance
IS Bulk Junction Saturation Current
N Bulk Junction Emission Coefficient
RB Bulk Series Resistance
PHI Surface Inversion Potential
GAMMA Body-effect Parameter
DELTA Width effect on Threshold Voltage
ETA Static Feedback on Threshold Voltage
THETA Mobility Modulation
KAPPA Saturation Field Factor
VMAX Maximum Drift Velocity of Carriers
XJ Metallurgical Junction Depth
UO Surface Mobility
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006

3. Transconductance Characteristic
Circuit Simulation Result
12
10
8
gfs
6
4
2
Measurement
Simulation
0
0.5 2.5 4.5 6.5 8.5
ID(A)
Comparison table
gfs
Id(A) Error(%)
Measurement Simulation
0.5 2.941 3.030 3.026
1 4.167 4.255 2.112
2 5.714 5.900 3.255
5 9.091 9.009 -0.902
8 10.811 11.127 2.923
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006

4. Vgs-Id Characteristic
Circuit Simulation result
20A
16A
12A
8A
4A
0A
0V 2V 4V 6V 8V 10V
I(V3)
V_V1
Evaluation circuit
V3
0Vdc
U1
V2
2SK3561
V1 20
5.3
0
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006

5. Comparison Graph
Circuit Simulation Result
Measurement
Simulation
6.5
ID - Drain Current - A
4.5
2.5
0.5
0 2 4 6 8 10
VGS - Gate to Source Voltage - V
Simulation Result
VGS(V)
ID(A) Error (%)
Measurement Simulation
0.5 3.85 3.9070 1.481
1 4.05 4.0475 -0.062
2 4.25 4.249 -0.024
5 4.7 4.659 -0.872
8 4.9 4.9629 1.284
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006

6. Rds(on) Characteristic
Circuit Simulation result
4.0A
3.0A
2.0A
1.0A
0A
0V 1.0V 2.0V 3.0V 4.0V 5.0V
I(V2)
V_V3
Evaluation circuit
V2
0Vdc
U1
V3
2SK3561 0Vdc
V1
10
0
Simulation Result
ID=4A, VGS=10V Measurement Simulation Error (%)
R DS (on) 0.75  0.759  1.2
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006

7. Gate Charge Characteristic
Circuit Simulation result
20V
10V
0V
0s 10ns 20ns 30ns 40ns 50ns
V(W1:3)
Time*1m
Evaluation circuit
RON = 1.0 U1
ROFF = 1e6
ION = 0
IOFF = 100u
W1
+ I2
2SK3561 D1
-
Dbreak
W 8
I1
I1 = 0
I2 = 1m V1
TD = 0
TR = 10n
TF = 10n
PW = 200u 400
PER = 500u
0
Simulation Result
VDD=400V,ID=8A Measurement Simulation Error (%)
Qgs 6.5 nC 6.5237 nC 0.365
Qgd 10 nC 10.214 nC 2.140
Qg 26.5 nC 23.947 nC -9.634
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006

8. Capacitance Characteristic
Measurement
Simulation
Simulation Result
Cbd(pF)
VDS(V) Error(%)
Measurement Simulation
0.1 1330 1335 0.376
0.2 1270 1275 0.394
0.5 1130 1120 -0.885
1 950 940 -1.053
2 700 710 1.429
5 400 410 2.500
10 255 245 -3.922
20 134 137 2.239
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006

9. Switching Time Characteristic
Circuit Simulation result
12V
8V
4V
0V
1.9us 2.0us 2.1us 2.2us
V(U1:G) V(U1:D)/20
Time
Evaluation circuit
L1 R2
50nH
U1 50
L2
V1
V1 = 0 V2 30nH
V2 = 10 200
TD = 2u R4 2SK3561
TR = 6n
TF = 7n 50
PW = 10u
PER = 30u
0
Simulation Result
ID=4 A, VDD=200V
Measurement Simulation Error(%)
VGS=0/10V
ton 45.000 ns 45.146 ns 0.324
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006

10. Output Characteristic
Circuit Simulation result
20A
16A 5.5
12A
5
8A
4.5
4A
VGS=4V
0A
0V 10V 20V 30V 40V 50V
I(Vdsense)
V_Vvariable
Evaluation circuit
Vdsense
0Vdc
U1
2SK3561
Vv ariable
Vstep
50
4
0
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006

11. BODY DIODE
Forward Current Characteristic
Circuit Simulation Result
100A
10A
1.0A
100mA
0V 0.2V 0.4V 0.6V 0.8V 1.0V 1.2V
I(R1)
V_V1
Evaluation Circuit
R1
0.01m
2SK3561
V1
0Vdc
U1
0
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006

12. Comparison Graph
Circuit Simulation Result
10
Measurement
Simulation
Drain reverse current IDR(A)
1
0.1
0 0.2 0.4 0.6 0.8 1 1.2
Source-Drain voltage VSD(V)
Simulation Result
VSD(V)
Ifwd(A) Measuremen Simulation %Error
0.1 0.64 0.64 0
0.2 0.665 0.664 -0.150
0.5 0.7 0.7 0
1 0.735 0.735 0
2 0.78 0.781 0.128
5 0.87 0.869 -0.115
10 0.97 0.971 0.103
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006

13. Reverse Recovery Characteristic
Circuit Simulation Result
400mA
200mA
0A
-200mA
-400mA
13us 16us 20us 24us
I(RL)
Time
Evaluation Circuit
RL
50
V1 = -9.33 V1 2SK3561
V2 = 10.65
TD = 0
TR = 10n
TF = 10n
PW = 15u
PER = 100u U3
0
Compare Measurement vs. Simulation
Trr(ns) Measurement Simulation Error (%)
Trj+Trb (us) 2.96 2.9648 0.162
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006

14. Reverse Recovery Characteristic Reference
Trj=1.44(us)
Trb=1.52(us)
Conditions:Ifwd=lrev=0.2(A),Rl=50
Example
Relation between trj and trb
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006

15. ESD PROTECTION DIODE
Zener Voltage Characteristic
Circuit Simulation Result
10mA
5mA
0A
0V 50V 100V
I(R1)
V_V1
Evaluation Circuit
U1
R1
0.01m
2SK3561 R2
V1
0Vdc 1G
0
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006

16. Zener Voltage Characteristic Reference
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006