SPICE MODEL of 2SK2417 (Professional+BDP Model) in SPICE PARK
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SPICE MODEL of 2SK2417 (Professional+BDP Model) in SPICE PARK. English Version is http://www.spicepark.net. Japanese Version is http://www.spicepark.com by Bee Technologies.
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SPICE MODEL of 2SK2417 (Professional+BDP Model) in SPICE PARK
- 1. Device Modeling Report COMPONENTS: Power MOSFET (Professional) PART NUMBER: 2SK2417 MANUFACTURER: TOSHIBA Body Diode (Professional) / ESD Protection Diode Bee Technologies Inc. All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
- 2. MOSFET MODEL PSpice model Model description parameter LEVEL L Channel Length W Channel Width KP Transconductance RS Source Ohmic Resistance RD Ohmic Drain Resistance VTO Zero-bias Threshold Voltage RDS Drain-Source Shunt Resistance TOX Gate Oxide Thickness CGSO Zero-bias Gate-Source Capacitance CGDO Zero-bias Gate-Drain Capacitance CBD Zero-bias Bulk-Drain Junction Capacitance MJ Bulk Junction Grading Coefficient PB Bulk Junction Potential FC Bulk Junction Forward-bias Capacitance Coefficient RG Gate Ohmic Resistance IS Bulk Junction Saturation Current N Bulk Junction Emission Coefficient RB Bulk Series Resistance PHI Surface Inversion Potential GAMMA Body-effect Parameter DELTA Width effect on Threshold Voltage ETA Static Feedback on Threshold Voltage THETA Mobility Modulation KAPPA Saturation Field Factor VMAX Maximum Drift Velocity of Carriers XJ Metallurgical Junction Depth UO Surface Mobility All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
- 3. Transconductance Characteristic Circuit Simulation Result 20 18 16 14 12 gfs 10 8 6 4 2 Measurement Simulation 0 0 1 2 3 4 5 6 7 8 9 10 ID(A) Comparison table gfs Id(A) Error(%) Measurement Simulation 0.1 1.400 1.428 2.000 0.2 1.600 1.667 4.188 0.5 2.700 2.778 2.889 1 4.000 4.000 0.000 2 5.500 5.405 -1.727 5 8.400 8.333 -0.798 10 11.300 11.236 -0.566 All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
- 4. Vgs-Id Characteristic Circuit Simulation result 12A 10A 8A 6A 4A 2A 0A 0V 1.0V 2.0V 3.0V 4.0V 5.0V 6.0V I(V3) V_V2 Evaluation circuit V3 0Vdc U23 Vv ariable 10Vdc 2SK2417 10Vdc V2 0 All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
- 5. Comparison Graph Circuit Simulation Result 10 Measurement Simulation 9 8 7 ID - Drain Current - A 6 5 4 3 2 1 0 0 1 2 3 4 5 6 VGS - Gate to Source Voltage - V Simulation Result VGS(V) ID(A) Error (%) Measurement Simulation 0.1 3.000 2.968 -1.067 0.2 3.050 3.035 -0.492 0.5 3.150 3.171 0.667 1 3.300 3.326 0.788 2 3.550 3.547 -0.085 5 4.000 3.997 -0.075 10 4.500 4.519 0.422 All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
- 6. Rds(on) Characteristic Circuit Simulation result 4.0A 3.0A 2.0A 1.0A 0A 0V 1.0V 2.0V 3.0V I(V3) V_VDS Evaluation circuit V3 0Vdc U23 VDS 10Vdc 2SK2417 0Vdc VGS 0 Simulation Result ID=3.5A, VGS=10V Measurement Simulation Error (%) R DS (on) 0.420 0.420 0 All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
- 7. Gate Charge Characteristic Circuit Simulation result 20V 15V 10V 5V 0V 0 10n 20n 30n 40n 50n V(W1:3) Time*1mS Evaluation circuit V2 0Vdc Dbreak PER = 1000u U23 PW = 600u W1 TF = 10n + 2SK2417 D1 TR = 10n I2 TD = 0 - 7.5Adc I2 = 1m W I1 IOFF = 100uA I1 = 0 ION = 0uA V1 200Vdc 0 Simulation Result VDD=200V,ID=7.5A Measurement Simulation Error (%) ,VGS=10V Qgs(nC) 13.000 13.109 0.838 Qgd(nC) 7.000 6.891 -1.557 Qg 40.000 39.783 -0.542 All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
- 8. Capacitance Characteristic Measurement Simulation Simulation Result Cbd(pF) VDS(V) Error(%) Measurement Simulation 0.1 503.000 500.000 -0.596 0.2 487.000 485.000 -0.411 0.5 460.000 460.000 0.000 1 420.000 420.000 0.000 2 351.000 350.000 -0.285 5 248.000 245.000 -1.210 10 151.000 150.000 -0.662 20 83.000 80.000 -3.614 50 39.000 40.000 2.564 All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
- 9. Switching Time Characteristic Circuit Simulation result 12V 8V 4V 0V 0.92us 1.00us 1.10us 1.20us 1.30us V(R2:1)/10 V(L1:2) Time Evaluation circuit L2 R2 50nH 28.6 R1 L1 U26 30nH V1 = 0 V1 V2 = 20 V2 15 2SK2417 100Vdc TD = 1u R3 TR = 10n TF = 10n 15 PW = 10u PER = 200u 0 Simulation Result ID=3.5 A, VDD=100V Measurement Simulation Error(%) VGS=0/10V Ton(ns) 20.000 20.529 2.645 All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
- 10. Output Characteristic Circuit Simulation result 20A 16A 5 12A 4.8 4.6 8A 4.4 4. 2 4A 4 VGS=3.8 V 0A 0V 10V 20V 30V 40V 50V I(Vdsense) V_Vvariable Evaluation circuit Vdsense 0Vdc U24 Vv ariable 10Vdc 2SK2417 10Vdc Vstep 0 All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
- 11. Forward Current Characteristic Circuit Simulation Result 30A 10A 1.0A 100mA 0V 0.2V 0.4V 0.6V 0.8V 1.0V 1.2V 1.4V 1.6V 1.8V I(R1) V_V1 Evaluation Circuit R1 0.01m 2SK2417 V1 0Vdc U23 0 All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
- 12. Comparison Graph Circuit Simulation Result 10 Measurement Simulation Drain reverse current IDR(A) 1 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 Source-Drain voltage VSD(V) Simulation Result VSD(V) IDR(A) Measuremen Simulation %Error 0.1 0.700 0.681 -2.714 0.2 0.720 0.721 0.139 0.5 0.760 0.786 3.421 1 0.850 0.853 0.353 2 0.940 0.945 0.532 5 1.150 1.135 -1.304 10 1.370 1.377 0.511 All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
- 13. Reverse Recovery Characteristic Circuit Simulation Result 400mA 300mA 200mA 100mA -0mA -100mA -200mA -300mA -400mA 1.2us 1.6us 2.0us 2.4us 2.8us 3.2us 3.6us 4.0us 4.4us 4.8us I(R1) Time Evaluation Circuit R1 50 D2417 V1 = -9.4v V1 V2 = 10.7v TD = 380n TR = 10ns TF = 13ns PW = 2us U24 PER = 100us 0 Compare Measurement vs. Simulation Measurement Simulation Error (%) Trj(ns) 484.000 484.723 0.149 Trb(ns) 280.000 283.217 1.149 Trr(ns) 764.000 767.940 0.516 All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
- 14. Reverse Recovery Characteristic Reference Trj=484(ns) Trb=28(ns) Conditions:Ifwd=lrev=0.2(A),Rl=50 Example Relation between trj and trb All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
- 15. Zener Voltage Characteristic Circuit Simulation Result 10mA 9mA 8mA 7mA 6mA 5mA 4mA 3mA 2mA 1mA 0A 0V 5V 10V 15V 20V 25V 30V 35V 40V 45V 50V I(R1) V_V1 Evaluation Circuit R1 0.01m V1 0Vdc R2 U24 2SK2417 100MEG 0 All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
- 16. Zener Voltage Characteristic Reference All Rights Reserved Copyright (c) Bee Technologies Inc. 2006