This document presents a detailed device modeling report for the MOSFET part number 2SK2201 manufactured by Toshiba. It includes various electrical characteristics and parameters such as transconductance, gate charge, and capacitance, along with measurement and simulation results comparing performance. The report also covers reverse recovery characteristics of the body diode and provides performance metrics with corresponding errors.

1. Device Modeling Report
COMPONENTS: MOSFET (Professional)
PART NUMBER: 2SK2201
MANUFACTURER: TOSHIBA
Body Diode (Professional) / ESD Protection diode
Bee Technologies Inc.
.
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006

2. MOSFET MODEL PARAMETERS
PSpice
model Model description
parameters
LEVEL
L Channel Length
W Channel Width
KP Transconductance
RS Source Ohmic Resistance
RD Ohmic Drain Resistance
VTO Zero-bias Threshold Voltage
RDS Drain-Source Shunt Resistance
TOX Gate Oxide Thickness
CGSO Zero-bias Gate-Source Capacitance
CGDO Zero-bias Gate-Drain Capacitance
CBD Zero-bias Bulk-Drain Junction Capacitance
MJ Bulk Junction Grading Coefficient
PB Bulk Junction Potential
FC Bulk Junction Forward-bias Capacitance Coefficient
RG Gate Ohmic Resistance
IS Bulk Junction Saturation Current
N Bulk Junction Emission Coefficient
RB Bulk Series Resistance
PHI Surface Inversion Potential
GAMMA Body-effect Parameter
DELTA Width effect on Threshold Voltage
ETA Static Feedback on Threshold Voltage
THETA Mobility Modulation
KAPPA Saturation Field Factor
VMAX Maximum Drift Velocity of Carriers
XJ Metallurgical Junction Depth
UO Surface Mobility
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006

3. Transconductance Characteristic
Circuit Simulation Result
10
Measurement
Simulation
TRANSCONDUCTANCE GFS(s)
1
0.1
0.1 1 10
DRIAN CURRENT ID (A)
Comparison table
Gfs(S)
Id(A) Error(%)
Measurement Simulation
0.1 0.7140 0.7407 3.75
0.2 1.0500 1.0526 0.25
0.5 1.6700 1.6447 -1.51
1 2.3800 2.3148 -2.74
2 3.3300 3.2415 -2.66
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006

4. Vgs-Id Characteristic
Circuit Simulation result
5.0A
4.0A
3.0A
2.0A
1.0A
0A
0V 1.0V 2.0V 3.0V 4.0V 5.0V
I(Vsense)
V_VGS
Evaluation circuit
Vsense
VDS
2SK2201 10Vdc
VGS
0
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006

5. Comparison Graph
Circuit Simulation Result
5
Measurement
Simulation
4
DRAIN CURRENT ID (A)
3
2
1
0
0 1 2 3 4 5
GATE-SOURCE VOLTAGE VGS (V)
Simulation Result
VGS(V)
ID(A) Error (%)
Measurement Simulation
0.1 2.0000 2.0364 1.82
0.2 2.15 2.1506 0.03
0.5 2.375 2.3780 0.13
1 2.65 2.6361 -0.52
2 3 3.0042 0.14
5 3.77 3.7453 -0.66
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006

6. Rds(on) Characteristic
Circuit Simulation result
2.0A
1.5A
1.0A
0.5A
0A
0V 0.5V 1.0V 1.5V 2.0V
I(Vsense)
V_VDS
Evaluation circuit
Vsense
2SK2201 VDS
VGS
10Vdc
0
Simulation Result
ID=2A, VGS=10V Measurement Simulation Error (%)
R DS (on) 0.28  0.28  0.0
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006

7. Gate Charge Characteristic
Circuit Simulation result
20V
16V
12V
8V
4V
0V
0 4n 8n 12n 16n 20n
V(W1:3)
Time*1mA
Evaluation circuit
Vsense
I1
D1
Dbreak 3Adc
W1 2SK2201
+
-
I2 W VD
TD = 0 ION = 0A 80Vdc
IOFF = 1mA
0
Simulation Result
VDD=80V,
Error
ID= 3A Measurement Simulation
(%)
Vg=10V
Qgs 1.2 nC 1.2105 nC 0.87
Qgd 4.8 nC 4.807 nC 0.15
Qg 13.5 nC 13.475 nC -0.19
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006

8. Capacitance Characteristic
Measurement
Simulation
Simulation Result
Cbd(pF)
VDS(V) Error(%)
Measurement Simulation
1 125 124.9700 -0.02
2 100 99.7500 -0.25
5 72 70.5000 -2.08
10 53 53.5000 0.94
20 40 40.3500 0.88
50 27 27.4000 1.48
100 20 20.5000 2.50
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006

9. Switching Time Characteristic
Circuit Simulation result
15V
14V
13V
12V
11V
10V
9V
8V
7V
6V
5V
4V
3V
2V
1V
0V
0.8us 1.0us 1.2us 1.4us 1.5us
V(L3:2) V(3)*0.2
Time
Evaluation circuit
Vsense RL
3
500
V1 = 0
R1 L3
V2 = 8 2
50 30nH
TD = 1u 2SK1825 VD
5Vdc
TR = 10n V1
R2
TF = 10n
50
PW = 10u
PER = 10m
0
Simulation Result
ID=2A,
Error
VDD= 50V, Measurement Simulation
(%)
VGS=0/10V
ton 50 ns 51.04 ns 2.08
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006

10. Output Characteristic
Circuit Simulation result
10A
8
6
10
8A
4
6A
3.5
4A
3
2A
VGS= 2.5V
0A
0V 2V 4V 6V 8V 10V
I(Vsense)
V_VDS
Evaluation circuit
Vsense
VDS
2SK2201
VGS
0
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006

11. Forward Current Characteristic
Circuit Simulation Result
10A
1.0A
100mA
0V 0.50V 1.00V 1.50V 2.00V 2.25V
I(R1)
V_V1
Evaluation Circuit
R1
0.01m
2SK2201
V1
0Vdc
0
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006

12. Comparison Graph
Circuit Simulation Result
10
Measurement
Simulation
DRAIN CURRENT ID (A)
1
0.1
0 0.5 1 1.5 2
GATE-SOURCE VOLTAGE VGS (V)
Simulation Result
VSD(V)
IDR(A) Error (%)
Measurement Simulation
0.1 0.6700 0.6679 -0.31
0.2 0.7000 0.6996 -0.06
0.5 0.7450 0.7487 0.49
1 0.8000 0.7980 -0.25
2 0.8700 0.8695 -0.06
5 1.0300 1.0386 0.83
10 1.2900 1.2878 -0.17
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006

13. Reverse Recovery Characteristic (Body Diode)
Circuit Simulation Result
400mA
300mA
200mA
100mA
-0mA
-100mA
-200mA
-300mA
-400mA
0.7us 0.9us 1.1us 1.3us 1.5us 1.7us
I(R1)
Time
Evaluation Circuit
R1 50
V1 = -9.3V
V2 = 10.8V
D2SK2201_PRO
TD = 65.3n
TR = 10ns V1
TF = 10ns
PW = 1us
PER = 50us
0
Compare Measurement vs. Simulation
Measurement Simulation Error (%)
trj 48 ns 48.068 ns 0.14
trb 70.8 ns 70.981 ns 0.26
trr 118.8 ns 119.049 ns 0.21
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006

14. Reverse Recovery Characteristic (Body Diode) Reference
Trj= 48(ns)
Trb= 70.8(ns)
Conditions:Ifwd=lrev=0.2(A),Rl=50
Example
Relation between trj and trb
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006

15. Zener Voltage Characteristic
Circuit Simulation Result
10mA
5mA
0A
0V 25V 50V
I(R1)
V_VG
Evaluation Circuit
R1
0.01m
VG
2SK2201
ROPN
100MEG
0
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006

16. Zener Voltage Characteristic Reference
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006