SPICE MODEL of 2SK2886 (Standard+BDS) in SPICE PARK. English Version is http://www.spicepark.net. Japanese Version is http://www.spicepark.com by Bee Technologies.

1. Device Modeling Report
COMPONENTS: MOSFET (Model Parameters)
PART NUMBER: 2SK2886
MANUFACTURER: TOSHIBA
REMARK: Body Diode (Model Parameters)
Bee Technologies Inc.
All Rights Reserved Copyright (C) Bee Technologies Inc. 2012
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2. Circuit Configuration
U1
2SK2886
All Rights Reserved Copyright (C) Bee Technologies Inc. 2012
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3. MOSFET MODEL
PSpice model
Model description
parameter
LEVEL
L Channel Length
W Channel Width
KP Transconductance
RS Source Ohmic Resistance
RD Ohmic Drain Resistance
VTO Zero-bias Threshold Voltage
RDS Drain-Source Shunt Resistance
TOX Gate Oxide Thickness
CGSO Zero-bias Gate-Source Capacitance
CGDO Zero-bias Gate-Drain Capacitance
CBD Zero-bias Bulk-Drain Junction Capacitance
MJ Bulk Junction Grading Coefficient
PB Bulk Junction Potential
FC Bulk Junction Forward-bias Capacitance Coefficient
RG Gate Ohmic Resistance
IS Bulk Junction Saturation Current
N Bulk Junction Emission Coefficient
RB Bulk Series Resistance
PHI Surface Inversion Potential
GAMMA Body-effect Parameter
DELTA Width effect on Threshold Voltage
ETA Static Feedback on Threshold Voltage
THETA Mobility Modulation
KAPPA Saturation Field Factor
VMAX Maximum Drift Velocity of Carriers
XJ Metallurgical Junction Depth
UO Surface Mobility
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4. Transconductance Characteristics
Circuit Simulation result
VDS=10V
Comparison table
gfs (S)
ID (A) %Error
Measurement Simulation
2 10.150 10.203 0.52
5 15.460 15.495 0.23
10 20.910 20.950 0.19
20 27.770 27.832 0.22
50 39.150 39.022 -0.33
100 48.450 48.506 0.12
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5. Vgs-Id Characteristics
Circuit Simulation result
120A
100A
80A
60A
40A
20A
0A
0V 2V 4V 6V 8V 10V 12V
I(U1:2)
V_VGS
Evaluation circuit
U1
2SK2886
V1
10V
VGS
0
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6. Comparison Graph
Circuit Simulation result
VDS=10V
Comparison table
VGS (V)
ID (A) %Error
Measurement Simulation
1 2.442 2.379 -2.58
2 2.560 2.493 -2.63
5 2.785 2.725 -2.15
10 3.091 2.998 -3.00
20 3.485 3.407 -2.25
50 4.300 4.294 -0.13
100 5.520 5.428 -1.66
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7. Rds (on) Characteristics
Circuit Simulation result
30A
25A
20A
15A
10A
5A
0A
0V 100mV 200mV 300mV 400mV
I(U1:2)
V_V1
Evaluation circuit
U1
2S K28 86
V1
VG S
10 V
0
Test condition: VGS=10(V), ID=25(A)
Parameter Unit Measurement Simulation %Error
RDS(on) mΩ 14.000 13.997 -0.02
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8. Output Characteristics
Circuit Simulation result
50A
10 4.25
8
40A
6
5 3.75
4.5
30A
3.5
20A
3
10A
VGS = 2.5V
0A
0V 4V 8V 12V 16V 20V
I(U1:2)
V_V1
Evaluation circuit
U1
2SK2886
V1
VGS
0
All Rights Reserved Copyright (C) Bee Technologies Inc. 2012
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9. Capacitance Characteristics
Simulation result
Measurement
Simulation
Comparison table
Cbd (pF)
VDS (V) %Error
Measurement Simulation
0.1 1900.000 1884.100 -0.84
0.2 1800.000 1814.000 0.78
0.5 1645.000 1616.600 -1.73
1 1450.000 1451.400 0.10
2 1200.000 1212.000 1.00
5 910.000 892.160 -1.96
10 705.000 680.700 -3.45
20 488.000 509.500 4.41
50 340.000 342.390 0.70
60 310.000 315.950 1.92
All Rights Reserved Copyright (C) Bee Technologies Inc. 2012
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10. Gate Charge Characteristics
Circuit Simulation result
20V
16V
12V
8V
4V
0V
0 20n 40n 60n 80n 100n
V(W1:3)
Time*1mA
Evaluation circuit
U1 D1
2SK2886 dmod ID
45A
I1 = 0 W1
I2 = 1m +
TF = 10n
TR = 10n -
VDD
TD = 0 IG W 40V
PER = 1 IOFF = 1mA
PW = 10m ION = 0
0
Test condition: VDD=40(V), VGS=10(V), ID=45(A)
Parameter Unit Measurement Simulation %Error
Qgs nC 11.700 11.688 -0.10
Qgd nC 23.385 23.146 -1.02
Qg nC 66.000 51.674 -21.71
All Rights Reserved Copyright (C) Bee Technologies Inc. 2012
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11. Switching Time Characteristics
Circuit Simulation result
15V
10V
5V
0V
1.6us 1.8us 2.0us 2.2us 2.4us 2.6us
V(U1:2)/2.5 V(U1:1)
Time
Evaluation circuit
L2
2 1
U1
50nH
L1 2SK2886
R1
30nH RL
V1 = 0 1 2 1.0
V2 = 20
TD = 2u V1
TR = 4n 50 R2 VDD
TF = 4n 50 25
PW = 5u
PER = 500u
0
Test condition: VDD=25(V), VGS=0/10(V), ID=25(A), RG=50, RL=1
Parameter Unit Measurement Simulation %Error
ton ns 70.000 69.314 -0.98
All Rights Reserved Copyright (C) Bee Technologies Inc. 2012
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12. Body Diode Forward Current Characteristics
Circuit Simulation result
100A
10A
1.0A
100mA
0V -0.2V -0.4V -0.6V -0.8V -1.0V -1.2V -1.4V -1.6V
I(VDS)
V_VDS
Evaluation circuit
U1
VDS 2SK2886
0
All Rights Reserved Copyright (C) Bee Technologies Inc. 2012
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13. Comparison Graph
Simulation result
Comparison table
-VDS (V)
IDR (A) %Error
Measurement Simulation
0.3 0.653 0.654 0.15
0.5 0.672 0.672 -0.01
1 0.702 0.698 -0.57
2 0.727 0.728 0.14
5 0.779 0.781 0.26
10 0.839 0.843 0.48
20 0.930 0.939 0.97
50 1.185 1.174 -0.93
100 1.530 1.516 -0.93
125 1.665 1.678 0.78
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14. Reverse Recovery Characteristics
Circuit Simulation result
400mA
300mA
200mA
100mA
-0mA
-100mA
-200mA
-300mA
-400mA
0.88us 0.96us 1.04us 1.12us 1.20us 1.28us
I(R1)
Time
Evaluation circuit
R1
50
V1 = -9 .4 V
V2 = 10.7V
TD = 0 ns V1
TR = 1 0n s
TF = 10n s
PW = 1 us U1
PE R = 10 0us 2S K28 86
0
Comparison Measurement vs. Simulation
Parameter Unit Measurement Simulation %Error
trj ns 28.800 28.914 0.40
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15. Reverse Recovery Characteristics Reference
Measurement
trj = 28.8(ns)
trb = 105(ns)
Conditions: Ifwd = lrev = 0.2(A), Rl = 50
Example
Relation between trj and trb
All Rights Reserved Copyright (C) Bee Technologies Inc. 2012
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16. ESD PROTECTION DIODE
Zener Voltage Characteristics
Circuit Simulation result
10mA
9mA
8mA
7mA
6mA
5mA
4mA
3mA
2mA
1mA
0A
0V 5V 10V 15V 20V 25V 30V 35V 40V 45V 50V
-I(VGS)
V_VGS
Evaluation circuit
U1
2SK2886
R1
1G
VGS
0
All Rights Reserved Copyright (C) Bee Technologies Inc. 2012
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17. Zener Voltage Characteristics Reference
Measurement
IZ = 1(mA)
VZ =22.9(V) at IZ=1.09mA
All Rights Reserved Copyright (C) Bee Technologies Inc. 2012
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