SPICE MODEL of 2SJ537 (Standard+BDS Model) in SPICE PARK
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SPICE MODEL of 2SJ537 (Standard+BDS) in SPICE PARK. English Version is http://www.spicepark.net. Japanese Version is http://www.spicepark.com by Bee Technologies.
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SPICE MODEL of 2SJ537 (Standard+BDS Model) in SPICE PARK
- 1. Device Modeling Report COMPONENTS: MOSFET (Model Parameter) PART NUMBER: 2SJ537 MANUFACTURER: TOSHIBA Body Diode (Standard) / ESD Protection Bee Technologies Inc. . All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
- 2. MOSFET MODEL PARAMETERS PSpice model Model description parameters LEVEL L Channel Length W Channel Width KP Transconductance RS Source Ohmic Resistance RD Ohmic Drain Resistance VTO Zero-bias Threshold Voltage RDS Drain-Source Shunt Resistance TOX Gate Oxide Thickness CGSO Zero-bias Gate-Source Capacitance CGDO Zero-bias Gate-Drain Capacitance CBD Zero-bias Bulk-Drain Junction Capacitance MJ Bulk Junction Grading Coefficient PB Bulk Junction Potential FC Bulk Junction Forward-bias Capacitance Coefficient RG Gate Ohmic Resistance IS Bulk Junction Saturation Current N Bulk Junction Emission Coefficient RB Bulk Series Resistance PHI Surface Inversion Potential GAMMA Body-effect Parameter DELTA Width effect on Threshold Voltage ETA Static Feedback on Threshold Voltage THETA Mobility Modulation KAPPA Saturation Field Factor VMAX Maximum Drift Velocity of Carriers XJ Metallurgical Junction Depth UO Surface Mobility All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
- 3. Transconductance Characteristic Circuit Simulation Result 10 Measurement Simulation 8 6 GFS(s) 4 2 0 0 1 2 3 4 5 6 DRIAN CURRENT - ID (A) Comparison table Gfs(S) Id(A) Error(%) Measurement Simulation -0.200 0.950 0.989 4.105 -0.500 1.600 1.556 -2.750 -1.000 2.250 2.180 -3.111 -2.000 3.200 3.059 -4.406 -5.000 4.800 4.746 -1.125 All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
- 4. Vgs-Id Characteristic Circuit Simulation result -10A -8A -6A -4A -2A 0A 0V -2V -4V -6V -8V -10V I(Vsense) V_VGS Evaluation circuit Vsense U3 2SJ537 VDS VGS -10Vdc 0Vdc 0 All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
- 5. Comparison Graph Circuit Simulation Result 10 Measurement Simulation 8 Drain Current - Id (A) 6 4 2 0 0 2 4 6 8 10 Gate-Source Voltage - Vgs (V) Simulation Result VGS(V) ID(A) Error (%) Measurement Simulation -0.200 -2.300 -2.316 0.687 -0.500 -2.500 -2.552 2.080 -1.000 -2.800 -2.824 0.857 -2.000 -3.200 -3.213 0.406 -5.000 -4.000 -3.996 -0.100 -10.000 -5.020 -4.900 -2.390 All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
- 6. Rds(on) Characteristic Circuit Simulation result -2.5A -2.0A -1.0A 0A 0V -100mV -200mV -300mV -400mV I(Vsense) V_VDS Evaluation circuit Vsense U3 2SJ537 VDS 0Vdc -10Vdc VGS 0 Simulation Result ID=-2.5A, VGS=-10V Measurement Simulation Error (%) R DS (on) 0.160 0.160 0.000 All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
- 7. Gate Charge Characteristic Circuit Simulation Result 20V 15V 10V 5V 0V 0 10n 20n 30n -V(W1:4) Time*1mA Evaluation Circuit U14 ION = 0uA IOFF = 1mA W - D2 I2 + I1 = 0 I1 5Adc I2 = 1m W1 Dbreak TD = 0 2SJ537 TR = 10n TF = 10n VDD PW = 600u PER = 1000u -40Vdc 0 Simulation Result VDD=-40V, ID= -5A Measurement Simulation Error (%) ,VGS=-10V Qgs 2.500 nC 2.556 nC 2.240 Qgd 5.000 nC 4.962 nC -0.760 Qg 18.000 nC 13.325 nC -25.972 All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
- 8. Capacitance Characteristic Measurement Simulation Simulation Result Cbd(pF) VDS(V) Error(%) Measurement Simulation 0.100 400.000 405.000 1.250 0.200 390.000 392.000 0.513 0.500 370.000 370.000 0.000 1.000 310.000 310.000 0.000 2.000 250.000 250.000 0.000 5.000 180.000 184.000 2.222 10.000 140.000 138.000 -1.429 20.000 112.000 110.000 -1.786 50.000 73.000 70.000 -4.110 All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
- 9. Switching Time Characteristic Circuit Simulation Result -14V -12V -10V -8V -6V -4V -2V 0V 1.923us 2.000us 2.100us 2.200us V(L3:2) V(L2:1)/2.5 Time Evaluation Circuit Vsense L2 RL 3 50nH 10 U6 R1 L3 2 VD 4.7 30nH V1 = 0 -25Vdc V2 = 20 TD = 2u 2SJ537 TF = 10n V1 R2 TR = 10n PW = 10u 4.7 PER = 10m 0 Simulation Result ID=-2.5A, VDD= -25V, Measurement Simulation Error(%) VGS=0/4V Td(on) 35.000 ns 34.869 ns -0.374 All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
- 10. Output Characteristic Circuit Simulation Result -10A -6 -8A -8 -10 -6A -4A -4V -2A VGS = - 3 V - 2.5V 0A 0V -2V -4V -6V -8V -10V I(Vsense) V_VDS Evaluation Circuit Vsense U3 VDS -10Vdc 2SJ537 VGS 0Vdc 0 All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
- 11. BODY DIODE SPICE MODEL Forward Current Characteristic Circuit Simulation Result 100A 10A 1.0A 100mA 0V 0.4V 0.8V 1.2V 1.6V I(R1) V_V1 Evaluation Circuit R1 0.01m U6 V1 0Vdc 2SJ537 0 All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
- 12. Comparison Graph Circuit Simulation Result 100 Measurement Simulation DRAIN REVERSE CURRENT IDR (A) 10 1 0.1 0 0.4 0.8 1.2 1.6 SOURCE-DRAINE VOLTAGE VSD (V) Simulation Result VSD(V) IDR(A) %Error Measurement Simulation 0.100 0.660 0.665 0.758 0.200 0.700 0.694 -0.857 0.500 0.740 0.735 -0.676 1.000 0.770 0.773 0.390 2.000 0.830 0.825 -0.602 5.000 0.930 0.939 0.968 10.000 1.100 1.099 -0.091 All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
- 13. Reverse Recovery Characteristic (Body Diode) Circuit Simulation Result 400mA 0A -400mA 0.88us 0.96us 1.04us 1.12us 1.20us 1.28us I(R1) Time Evaluation Circuit R1 50 U8 V1 = -9.3V V2 = 10.6V TD = 9n V1 TR = 10ns TF = 5.7ns PW = 1us PER = 50us 2SJ537 0 Compare Measurement vs. Simulation Measurement Simulation Error (%) trj 33.600 ns 33.939 ns 1.009 trb 24.500 ns 23.276 ns -4.996 trr 58.400 ns 57.215 ns -2.029 All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
- 14. Reverse Recovery Characteristic (Body Diode) Reference Trj= (33.6ns) Trb= (58.4ns) Conditions:Ifwd=lrev=0.2(A),Rl=50 Example Relation between trj and trb All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
- 15. ESD PROTECTION DIODE SPICE MODEL Zener Voltage Characteristic Circuit Simulation Result 10mA 9mA 8mA 7mA 6mA 5mA 4mA 3mA 2mA 1mA 0A 0V 5V 10V 15V 20V 25V 30V 35V 40V 45V 50V I(R1) V_V1 Evaluation Circuit R1 0.01m U20 2SJ537 V1 0Vdc I1 0Adc 0 All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
- 16. Zener Voltage Characteristic Reference All Rights Reserved Copyright (c) Bee Technologies Inc. 2006