SPICE MODEL of TPC8212-H (Standard+BDS) in SPICE PARK. English Version is http://www.spicepark.net. Japanese Version is http://www.spicepark.com by Bee Technologies.

1. Device Modeling Report
COMPONENTS: Power MOSFET (Model Parameter)
PART NUMBER: TPC8212-H
MANUFACTURER: TOSHIBA
Body Diode (Model Parameter) / ESD Protection Diode
Bee Technologies Inc.
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006

2. MOSFET MODEL
Pspice model
Model description
parameter
LEVEL
L Channel Length
W Channel Width
KP Transconductance
RS Source Ohmic Resistance
RD Ohmic Drain Resistance
VTO Zero-bias Threshold Voltage
RDS Drain-Source Shunt Resistance
TOX Gate Oxide Thickness
CGSO Zero-bias Gate-Source Capacitance
CGDO Zero-bias Gate-Drain Capacitance
CBD Zero-bias Bulk-Drain Junction Capacitance
MJ Bulk Junction Grading Coefficient
PB Bulk Junction Potential
FC Bulk Junction Forward-bias Capacitance Coefficient
RG Gate Ohmic Resistance
IS Bulk Junction Saturation Current
N Bulk Junction Emission Coefficient
RB Bulk Series Resistance
PHI Surface Inversion Potential
GAMMA Body-effect Parameter
DELTA Width effect on Threshold Voltage
ETA Static Feedback on Threshold Voltage
THETA Modility Modulation
KAPPA Saturation Field Factor
VMAX Maximum Drift Velocity of Carriers
XJ Metallurgical Junction Depth
UO Surface Mobility
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006

3. Transconductance Characteristic
Circuit Simulation Result
Comparison table
gfs
Id(A) Error(%)
Measurement Simulation
0.500 6.000 6.105 1.750
1.000 8.200 8.230 0.366
2.000 12.000 12.260 2.167
5.000 17.500 17.950 2.571
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006

4. Vgs-Id Characteristic
Circuit Simulation result
8.0A
6.0A
4.0A
2.0A
0A
0V 1.0V 2.0V 3.0V 4.0V 5.0V 6.0V
I(V3)
V_V2
Evaluation circuit
U17 V3
0Vdc
open open
open
open open V1
TPC8212-H
10Vdc R1
V2
0Vdc 100MEG
0
0
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006

5. Comparison Graph
Circuit Simulation Result
Simulation Result
VGS(V)
ID(A) Error (%)
Measurement Simulation
1.000 2.850 2.842 -0.281
2.000 2.950 2.945 -0.169
4.000 3.100 3.099 -0.032
6.000 3.230 3.223 -0.217
8.000 3.330 3.332 0.060
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006

6. Rds(on) Characteristic
Circuit Simulation result
4.0A
3.0A
2.0A
1.0A
0A
0V 20mV 40mV 60mV 80mV 100mV
I(V3)
V_VDS
Evaluation circuit
U17 V3
0Vdc
open
open open
open open
VGS 0Vdc VDS Ropen
10Vdc TPC8212-H
100MEG
0
0
Simulation Result
ID=3.0A, VGS=10V Measurement Simulation Error (%)
R DS (on) 16.000 m 16.032 m 0.200
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006

7. Gate Charge Characteristic
Circuit Simulation result
20V
15V
10V
5V
0V
0 6n 12n 18n 24n 30n
V(W1:3)
Time*1mS
Evaluation circuit
V2
0Vdc
open
open open
W1
open open
+ D1 I2 Ropen
TD = 0
- 100MEG
TF = 10n I1 TPC8212-H 6Adc
PW = 600u Dbreak
PER = 1000u W
I1 = 0 ION = 0uA
I2 = 1m IOFF = 100uA V1 0
TR = 10n
24Vdc
0
Simulation Result
VDD=24V,ID=6.0A Measurement Simulation Error (%)
,VGS=10V
Qgs 3.100 nC 3.120 nC 0.645
Qgd 4.100 nC 4.194 nC 2.293
Qg 16.000 nC 14.698 nC -8.138
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006

8. Capacitance Characteristic
Measurement
Simulation
Simulation Result
Cbd(nF)
VDS(V) Error(%)
Measurement Simulation
0.100 0.850 0.855 0.588
0.200 0.800 0.790 -1.250
0.500 0.710 0.705 -0.704
1.000 0.620 0.622 0.323
2.000 0.510 0.515 0.980
5.000 0.370 0.366 -1.081
10.000 0.300 0.304 1.333
20.000 0.220 0.217 -1.364
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006

9. Switching Time Characteristic
Circuit Simulation result
14
10
5
0
1.95us 2.00us 2.05us 2.10us
V(R1:1) V(L2:1)/1.5
Time
Evaluation circuit
U17 L2 R2
RG L1
50nH 5
30nH
open open open
4.7
open open
V1 = 0
V2 = 20 V2 R1
TD = 2u TPC8212-H V1 Ropen
4.7 15Vdc
TR = 6n 100MEG
TF = 7n
PW = 20u
PER = 2000u
0
0
Simulation Result
ID=3.0A, VDD=15V
Measurement Simulation Error(%)
VGS=0/10V
ton 11.000 ns 11.070 ns 0.636
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006

10. Output Characteristic
Circuit Simulation result
10A
10V 6V 3.6V
8V
8A
3.5V
6A
3.4V
4A
3.3V
2A VGS=3.1V
0A
0V 0.4V 0.8V 1.2V 1.6V 2.0V
I(Vdsense)
V_Vvariable
Evaluation circuit
Vdsense
U17
0Vdc
Vv ariable
Vstep open open
10Vdc
open
open open
10Vdc
TPC8212-H
R1
100MEG
0
0
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006

11. Forward Current Characteristic
Circuit Simulation Result
20A
10A
1.0A
0V 0.4V 0.8V 1.2V
I(R1)
V_V1
Evaluation Circuit
R1
0.01m
openopen
open
TPC8212-H
V1 Ropen
0Vdc U17
100MEG
openopen 0
0
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006

12. Comparison Graph
Circuit Simulation Result
Simulation Result
VDS (V) VDS (V)
IDR (A) Measurement Simulation %Error
1.000 0.700 0.699 -0.143
2.000 0.730 0.732 0.274
5.000 0.795 0.790 -0.629
10.000 0.850 0.854 0.471
20.000 0.960 0.959 -0.104
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006

13. Reverse Recovery Characteristic
Circuit Simulation Result
400mA
300mA
200mA
100mA
-0mA
-100mA
-200mA
-300mA
-400mA
0.92us 1.18us
I(R1)
Time
Evaluation Circuit
R1
50
openopen
open
TPC8212-H
V1 = -9.4v V1 U18 Ropen
V2 = 10.6v
TD = 0 100MEG
TR = 10ns
TF = 10ns
PW = 1us
PER = 100us openopen 0
0
Compare Measurement vs. Simulation
Measurement Simulation Error (%)
trj 10.400 ns 12.466 ns 19.865
trb 56.000 ns 73.558 ns 31.354
trr 66.400 ns 86.024 ns 29.554
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006

14. Reverse Recovery Characteristic Reference
Trj=10.4(ns)
Trb=56.0(ns)
Conditions:Ifwd=lrev=0.2(A),Rl=50
Example
Relation between trj and trb
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006

15. Zener Voltage Characteristic
Circuit Simulation Result
10mA
9mA
8mA
7mA
6mA
5mA
4mA
3mA
2mA
1mA
0A
0V 5V 10V 15V 20V 25V 30V 35V 40V 45V 50V
I(R1)
V_V1
Evaluation Circuit
R1
0.01m U17 open
open open
V1 open open
Ropen
0Vdc
open 100MEG
open
TPC8212-H 0
0
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006

16. Zener Voltage Characteristic Reference
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006