SPICE MODEL of 2SK4108 (Standard+BDS Model) in SPICE PARK
•
0 likes•260 views
SPICE MODEL of 2SK4108 (Standard+BDS) in SPICE PARK. English Version is http://www.spicepark.net. Japanese Version is http://www.spicepark.com by Bee Technologies.
Recommended
Recommended
More Related Content
What's hot
What's hot (20)
Similar to SPICE MODEL of 2SK4108 (Standard+BDS Model) in SPICE PARK
Similar to SPICE MODEL of 2SK4108 (Standard+BDS Model) in SPICE PARK (20)
More from Tsuyoshi Horigome
More from Tsuyoshi Horigome (20)
Recently uploaded
Recently uploaded (20)
SPICE MODEL of 2SK4108 (Standard+BDS Model) in SPICE PARK
- 1. Device Modeling Report COMPONENTS: Power MOSFET (Model Parameter) PART NUMBER: 2SK4108 MANUFACTURER: TOSHIBA Body Diode (Model Parameter) / ESD Protection Diode Bee Technologies Inc. All Rights Reserved Copyright (c) Bee Technologies Inc. 2007
- 2. Circuit Configuration All Rights Reserved Copyright (c) Bee Technologies Inc. 2007
- 3. MOSFET MODEL Pspice model Model description parameter LEVEL L Channel Length W Channel Width KP Transconductance RS Source Ohmic Resistance RD Ohmic Drain Resistance VTO Zero-bias Threshold Voltage RDS Drain-Source Shunt Resistance TOX Gate Oxide Thickness CGSO Zero-bias Gate-Source Capacitance CGDO Zero-bias Gate-Drain Capacitance CBD Zero-bias Bulk-Drain Junction Capacitance MJ Bulk Junction Grading Coefficient PB Bulk Junction Potential FC Bulk Junction Forward-bias Capacitance Coefficient RG Gate Ohmic Resistance IS Bulk Junction Saturation Current N Bulk Junction Emission Coefficient RB Bulk Series Resistance PHI Surface Inversion Potential GAMMA Body-effect Parameter DELTA Width effect on Threshold Voltage ETA Static Feedback on Threshold Voltage THETA Modility Modulation KAPPA Saturation Field Factor VMAX Maximum Drift Velocity of Carriers XJ Metallurgical Junction Depth UO Surface Mobility All Rights Reserved Copyright (c) Bee Technologies Inc. 2007
- 4. Transconductance Characteristic Circuit Simulation Result 6 Measurement Simulation 5 4 gfs 3 2 1 0 0 0.25 0.5 0.75 1 1.25 1.5 1.75 2 ID : Drain Current A Comparison table Id(A) gfs Error(%) Measurement Simulation 0.100 0.650 0.667 2.615 0.200 1.500 1.500 0.000 0.500 2.500 2.500 0.000 1.000 3.500 3.571 2.029 2.000 5.500 5.556 1.018 All Rights Reserved Copyright (c) Bee Technologies Inc. 2007
- 5. Vgs-Id Characteristic Circuit Simulation result 10A 1.0A 100mA 0V 2V 4V 6V 8V 10V I(V3) V_V2 Evaluation circuit V3 0Vdc U1 2SK4108 Vv ariable 10Vdc 10Vdc V2 0 All Rights Reserved Copyright (c) Bee Technologies Inc. 2007
- 6. Comparison Graph Circuit Simulation Result 10.000 Measurement Simulation ID : Drain Current A 1.000 0.100 0.0 2.0 4.0 6.0 8.0 10.0 VGS : Gate to Source Voltage V Simulation Result ID(A) VGS(V) Error (%) Measurement Simulation 0.1 3.765 3.950 4.914 0.2 3.850 4.035 4.805 0.5 4.010 4.181 4.264 1 4.200 4.353 3.643 2 4.490 4.601 2.472 5 4.990 5.095 2.104 10 5.480 5.673 3.522 All Rights Reserved Copyright (c) Bee Technologies Inc. 2007
- 7. Rds(on) Characteristic Circuit Simulation result 12A 10A 8A 6A 4A 2A 0A 0V 0.5V 1.0V 1.5V 2.0V 2.5V I(V3) V_VDS Evaluation circuit V3 0Vdc U1 2SK4108 VDS 10Vdc 0Vdc VGS 0 Simulation Result ID=10 A, VGS=10V Measurement Simulation Error (%) R DS (on) () 0.210 0.210 0.005 All Rights Reserved Copyright (c) Bee Technologies Inc. 2007
- 8. Gate Charge Characteristic Circuit Simulation result 20V 16V 12V 8V 4V 0V 0 20n 40n 60n 80n 100n 120n V(W1:3) Time*1mS Evaluation circuit V2 0Vdc PER = 1000u U1 Dbreak PW = 600u W1 2SK4108 TF = 10n + D1 TR = 10n I2 - TD = 0 20Adc I2 = 1m W I1 = 0 I1 IOFF = 0.1mA ION = 0uA V1 400Vdc 0 Simulation Result VDD=400V,ID=20A Measurement Simulation Error (%) ,VGS=10V Qgs(nc) 24.000 24.000 0.000 Qgd(nc) 26.000 26.000 0.000 Qg(nc) 69.000 67.895 -1.601 All Rights Reserved Copyright (c) Bee Technologies Inc. 2007
- 9. Capacitance Characteristic Measurement Simulation Simulation Result VDS(V) Cbd(pF) Error(%) Measurement Simulation 0.1 4400.000 4410.000 0.227 0.2 4200.000 4210.000 0.238 0.5 3700.000 3695.000 -0.135 1 3100.000 3070.000 -0.968 2 2250.000 2270.000 0.889 5 1220.000 1230.000 0.820 10 750.000 755.000 0.667 20 370.000 385.000 4.054 50 212.000 203.000 -4.245 100 153.000 147.000 -3.922 All Rights Reserved Copyright (c) Bee Technologies Inc. 2007
- 10. Switching Time Characteristic Circuit Simulation result 12V 10V 8V 6V 4V 2V 0V 1.90us 1.96us 2.02us 2.08us 2.14us 2.20us 2.26us 2.32us V(2) V(3)/20 Time Evaluation circuit 3 L2 50n L1 2 RL U1 2SK4108 20 V1 = 0 30nH V2 = 10 V2 TD = 2u R2 VDD TR = 6n 200Vdc TF = 7n 50 PW = 2u PER = 10u 0 Simulation Result ID=10A, VDD=200V Measurement Simulation Error(%) VGS=10V Ton(ns) 130.000 130.019 0.015 All Rights Reserved Copyright (c) Bee Technologies Inc. 2007
- 11. Output Characteristic Circuit Simulation result 10A 10.0V 8.0V 6.0V 8A 5.5V 6A 5.25V 4A 5.0V 2A 4.5V VGS=4.0 V 0A 0V 1.0V 2.0V 3.0V 4.0V 5.0V I(Vdsense) V_Vvariable Evaluation circuit Vdsense 0Vdc U1 2SK4108 Vv ariable 10Vdc 0Vdc Vstep 0 All Rights Reserved Copyright (c) Bee Technologies Inc. 2007
- 12. BODY DIODE SPICE MODEL563 Forward Current Characteristic Circuit Simulation Result 100A 10A 1.0A 100mA 0V 0.2V 0.4V 0.6V 0.8V 1.0V 1.2V 1.4V I(R1) V_V1 Evaluation Circuit R1 0.01m V1 0Vdc U1 2SK4108 0 All Rights Reserved Copyright (c) Bee Technologies Inc. 2007
- 13. Comparison Graph Circuit Simulation Result 100.000 Measurement Simulation Drain reverse current IDR(A) 10.000 1.000 0.100 0 0.2 0.4 0.6 0.8 1 1.2 1.4 Source: Drain voltage VSD(V) Simulation Result IDR(A) VDS(V) VDS(V) %Error Measurement Simulation 0.100 0.600 0.599 -0.167 0.200 0.620 0.622 0.323 0.500 0.655 0.656 0.153 1.000 0.690 0.686 -0.580 2.000 0.725 0.724 -0.138 5.000 0.800 0.798 -0.313 10.000 0.892 0.895 0.336 20.000 1.070 1.069 -0.093 All Rights Reserved Copyright (c) Bee Technologies Inc. 2007
- 14. Reverse Recovery Characteristic Circuit Simulation Result 400mA 200mA 0A -200mA -400mA 18us 19us 20us 21us 22us 23us 24us 25us 26us 27us I(R1) Time Evaluation Circuit R1 50 V1 = -9.4V V1 V2 = 10.6V TD = 0.3u U1 TR = 10ns 2SK4108 TF = 19ns PW = 20us PER = 100us 0 Compare Measurement vs. Simulation Measurement Simulation Error (%) Trr(us) 2.680 2.679 -0.030 All Rights Reserved Copyright (c) Bee Technologies Inc. 2007
- 15. Reverse Recovery Characteristic Reference Trj=1.68(us) Trb=1.0(us) Conditions:Ifwd=lrev=0.2(A),Rl=50 Example Relation between trj and trb All Rights Reserved Copyright (c) Bee Technologies Inc. 2007
- 16. ESD PROTECTION DIODE SPICE MODEL Zener Voltage Characteristic Circuit Simulation Result 10mA 9mA 8mA 7mA 6mA 5mA 4mA 3mA 2mA 1mA 0A 0V 10V 20V 30V 40V 50V 60V 70V 80V 90V I(R1) V_V1 Evaluation Circuit R1 0.01m V1 0Vdc U1 2SK4108 R2 100MEG 0 All Rights Reserved Copyright (c) Bee Technologies Inc. 2007
- 17. Zener Voltage Characteristic Reference All Rights Reserved Copyright (c) Bee Technologies Inc. 2007