The document is a device modeling report for the 2N3055 bipolar junction transistor from STMicroelectronics, detailing essential parameters and characteristics such as saturation current, maximum forward beta, and various voltage characteristics. It includes circuit simulation results, comparison tables for measurement and simulation data, and theoretical values for key performance metrics. The report is copyrighted by Bee Technologies Inc. in 2005.

1. Device Modeling Report
COMPONENTS:BIPOLAR JUNCTION TRANSISTOR
PART NUMBER:2N3055
MANUFACTURER: STMicroelectronics
Bee Technologies Inc.
All Rights Reserved Copyright (C) Bee Technologies Inc. 2005

2. Pspice
model Model description
parameter
IS Saturation Current
BF Ideal Maximum Forward Beta
NF Forward Current Emission Coefficient
VAF Forward Early Voltage
IKF Forward Beta Roll-off Knee Current
ISE Non-ideal Base-Emitter Diode Saturation Current
NE Non-ideal Base-Emitter Diode Emission Coefficient
BR Ideal Maximum Reverse Beta
NR Reverse Emission Coefficient
VAR Reverse Early Voltage
IKR Reverse Beta Roll-off Knee Current
ISC Non-ideal Base-Collector Diode Saturation Current
NC Non-ideal Base-Collector Diode Emission Coefficient
NK Forward Beta Roll-off Slope Exponent
RE Emitter Resistance
RB Base Resistance
RC Series Collector Resistance
CJE Zero-bias Emitter-Base Junction Capacitance
VJE Emitter-Base Junction Potential
MJE Emitter-Base Junction Grading Coefficient
CJC Zero-bias Collector-Base Junction Capacitance
VJC Collector-base Junction Potential
MJC Collector-base Junction Grading Coefficient
FC Coefficient for Onset of Forward-bias Depletion
Capacitance
TF Forward Transit Time
XTF Coefficient for TF Dependency on Vce
VTF Voltage for TF Dependency on Vce
ITF Current for TF Dependency on Ic
PTF Excess Phase at f=1/2pi*TF
TR Reverse Transit Time
EG Activation Energy
XTB Forward Beta Temperature Coefficient
XTI Temperature Coefficient for IS
All Rights Reserved Copyright (C) Bee Technologies Inc. 2005

3. Reverse
Reverse Early Voltage Characteristic
Ic
VAR
Vce
Y=aX+b
(X1,Y1)
(X2,Y2)
All Rights Reserved Copyright (C) Bee Technologies Inc. 2005

4. Reverse DC Beta Characteristic (Ie vs. hFE)
Measurement
Simulation
All Rights Reserved Copyright (C) Bee Technologies Inc. 2005

5. Forward
Forward Early Voltage Characteristic
Ic (X2,Y2)
Y=aX+b (X1,Y1)
Vce
VAF
All Rights Reserved Copyright (C) Bee Technologies Inc. 2005

6. Forward DC Beta Characteristic
Measurement
Simulation
Vbe(sat) Voltage Characteristic
Measurement
Simulation
All Rights Reserved Copyright (C) Bee Technologies Inc. 2005

7. Vce(sat) Voltage Characteristic
Measurement
Simulation
C-B Capacitance Characteristic
Measurement
Simulation
All Rights Reserved Copyright (C) Bee Technologies Inc. 2005

8. E-B Capacitance Characteristic
Measurement
Simulation
All Rights Reserved Copyright (C) Bee Technologies Inc. 2005

9. BJT Ic-hFE Characteristics
Evaluation circuit
Q1
Q2N3055
4 V1
I1
7
0
Circuit simulation result
Simulation
All Rights Reserved Copyright (C) Bee Technologies Inc. 2005

10. Comparison Table
hFE hFE
Ifwd(A) %Error
Measurement Simulation
0.1 115 112.753 1.954
0.2 120 118.577 1.186
0.5 110 110.505 -0.459
1 90 89.386 0.682
2 60 60.289 -0.482
5 28 27.206 2.836
10 12.5 12.862 -2.896
All Rights Reserved Copyright (C) Bee Technologies Inc. 2005

11. BJT Vce(sat) voltage& Vbe(sat) voltage Characteristics
Evaluation circuit
I2
4
Q1
Q2N3055
I1
0.4
0
Circuit simulation result
Vce(sat)
Comparison Table
Ic=4A,Ib=0.4A Measurement Simulation %Error
Vce(sat) (V) 1(max) 0.401945 0
All Rights Reserved Copyright (C) Bee Technologies Inc. 2005

12. BJT Output Characteristic
Circuit simulation result
All Rights Reserved Copyright (C) Bee Technologies Inc. 2005