SPICE MODEL of TPC8406-H (Professional+BDSP N&P Model) in SPICE PARK
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SPICE MODEL of TPC8406-H (Professional+BDSP N&P Model) in SPICE PARK. English Version is http://www.spicepark.net. Japanese Version is http://www.spicepark.com by Bee Technologies.
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SPICE MODEL of TPC8406-H (Professional+BDSP N&P Model) in SPICE PARK
- 1. Device Modeling Report COMPONENTS: Power MOSFET (Professional) PART NUMBER: TPC8406-H MANUFACTURER: TOSHIBA Body Diode (Special) / ESD Protection Diode Remark: Silicon N&P Channel MOS Type Bee Technologies Inc. All Rights Reserved Copyright (c) Bee Technologies Inc. 2005
- 2. MOSFET MODEL Pspice model Model description parameter LEVEL L Channel Length W Channel Width KP Transconductance RS Source Ohmic Resistance RD Ohmic Drain Resistance VTO Zero-bias Threshold Voltage RDS Drain-Source Shunt Resistance TOX Gate Oxide Thickness CGSO Zero-bias Gate-Source Capacitance CGDO Zero-bias Gate-Drain Capacitance CBD Zero-bias Bulk-Drain Junction Capacitance MJ Bulk Junction Grading Coefficient PB Bulk Junction Potential FC Bulk Junction Forward-bias Capacitance Coefficient RG Gate Ohmic Resistance IS Bulk Junction Saturation Current N Bulk Junction Emission Coefficient RB Bulk Series Resistance PHI Surface Inversion Potential GAMMA Body-effect Parameter DELTA Width effect on Threshold Voltage ETA Static Feedback on Threshold Voltage THETA Modility Modulation KAPPA Saturation Field Factor VMAX Maximum Drift Velocity of Carriers XJ Metallurgical Junction Depth UO Surface Mobility All Rights Reserved Copyright (c) Bee Technologies Inc. 2005
- 3. P-Channel Model Transconductance Characteristic Circuit Simulation Result Comparison table gfs Id(A) Error(%) Measurement Simulation -0.500 6.024 6.250 3.752 -1.000 7.692 7.813 1.563 -2.000 10.526 10.638 1.067 -5.000 15.625 15.773 0.947 All Rights Reserved Copyright (c) Bee Technologies Inc. 2005
- 4. Vgs-Id Characteristic Circuit Simulation result -25.0A -22.5A -20.0A -17.5A -15.0A -12.5A -10.0A -7.5A -5.0A -2.5A 0A 0V -0.5V -1.0V -1.5V -2.0V -2.5V -3.0V -3.5V -4.0V -4.5V I(V3) V_V1 Evaluation circuit open open open open open R1 100MEG TPC8406-H V3 0 0Vdc V1 V2 -4.5Vdc -10Vdc 0 All Rights Reserved Copyright (c) Bee Technologies Inc. 2005
- 5. Comparison Graph Circuit Simulation Result Simulation Result VGS(V) ID(A) Error (%) Measurement Simulation -1.000 -2.050 -2.030 -0.985 -2.000 -2.150 -2.141 -0.428 -5.000 -2.400 -2.372 -1.183 -10.000 -2.650 -2.649 -0.053 -20.000 -3.050 -3.071 0.679 All Rights Reserved Copyright (c) Bee Technologies Inc. 2005
- 6. Rds(on) Characteristic Circuit Simulation result -3.0A -2.0A -1.0A 0A 0V -50mV -150mV -250mV -350mV -450mV I(V3) V_V2 Evaluation circuit open open open open open R1 100MEG TPC8406-H V3 0 0Vdc V1 V2 -4.5Vdc 10Vdc 0 Simulation Result ID=-3.3A, VGS=-4.5V Measurement Simulation Error (%) R DS (on) 29.000 m 29.000 m 0.000 All Rights Reserved Copyright (c) Bee Technologies Inc. 2005
- 7. Gate Charge Characteristic Circuit Simulation result -20V -18V -16V -16V -14V -8V -12V VDD=-32V -10V -8V -6V -4V -2V 0V 0 5n 10n 15n 20n 25n 30n 35n 40n 45n 50n V(W1:2) Time*1ms Evaluation circuit open open open open V2 0Vdc open ION = 0uA IOFF = 1m TPC8406-H W D1 R1 - 100MEG I1 = 0 + I2 I1 Dbreak I2 = 1m W1 0 TD = 0 -6.5Adc TR = 10n TF = 10n PW = 600u V1 PER = 1000u -32Vdc 0 Simulation Result VDD=-32V,ID=-6.5A Measurement Simulation Error (%) ,VGS=-10V Qgs 3.200 nC 3.261 nC 1.903 Qgd 8.100 nC 7.935 nC -2.040 Qg 27.000 nC 27.065 nC 0.241 All Rights Reserved Copyright (c) Bee Technologies Inc. 2005
- 8. Capacitance Characteristic Measurement Simulation Simulation Result Cbd(pF) VSD(V) Error(%) Measurement Simulation 0.100 132.620 132.900 0.211 0.200 128.800 127.500 -1.009 0.500 121.200 120.500 -0.578 1.000 112.750 113.500 0.665 2.000 105.950 106.300 0.330 5.000 97.450 96.000 -1.488 0.100 132.620 132.900 0.211 All Rights Reserved Copyright (c) Bee Technologies Inc. 2005
- 9. Switching Time Characteristic Circuit Simulation result -12V VDD = -20V Vg = 0/-10.0V -8V -4V 0V 4.965us 4.980us 5.000us 5.020us 5.040us 5.060us V(2) V(3)/2 Time Evaluation circuit open open open open V3 R1 L2 3 2 0Vdc L1 4.7 30nH 50nH open V1 = 0 TPC8406-H V1 V2 = -20 Ropen TD = 5u R2 100MEG TR = 6n TF = 6n 4.7 RL PW = 5u 0 PER = 10u 6.1 0 0 VDD -20.15 0 0 Simulation Result ID=-3.3 A, VDD=-20V Measurement Simulation Error(%) VGS=0/-10V ton 12.000 ns 11.985 ns -0.125 All Rights Reserved Copyright (c) Bee Technologies Inc. 2005
- 10. Output Characteristic Circuit Simulation result -20A 10V -4.0 4.5V V -3.4V -18A -16A -3.2V -14A -12A -3.0V -10A -8A -2.8V -6A -4A -2.6V -2A VGS=-2.4V 0A 0V -0.2V -0.4V -0.6V -0.8V -1.0V -1.2V -1.4V -1.6V -1.8V I(V3) V_V2 Evaluation circuit open open open open open R1 100MEG TPC8406-H V3 0 0Vdc V1 V2 -4.5Vdc 10Vdc 0 All Rights Reserved Copyright (c) Bee Technologies Inc. 2005
- 11. Forward Current Characteristic Circuit Simulation Result 100A 10A 1.0A 100mA 0V 0.2V 0.4V 0.6V 0.8V 1.0V 1.2V I(R1) V_V1 Evaluation Circuit R1 0.01m U1 V1 0Vdc 0 All Rights Reserved Copyright (c) Bee Technologies Inc. 2005
- 12. Comparison Graph Circuit Simulation Result 100 Measurement Simulation Drain reverse current IDR (A) 10 1 0.1 0 0.2 0.4 0.6 0.8 1 1.2 Drain-source voltage VSD (V) Simulation Result VSD(V) IDR(A) %Error Measurement Simulation 0.1 0.6200 0.6199 -0.0161 0.2 0.6450 0.6449 -0.0155 0.5 0.6800 0.6801 0.0147 1 0.7100 0.7092 -0.1127 2 0.7450 0.7430 -0.2685 5 0.8000 0.8034 0.4250 10 0.8700 0.8716 0.1839 20 0.9800 0.9743 -0.5816 All Rights Reserved Copyright (c) Bee Technologies Inc. 2005
- 13. Reverse Recovery Characteristics (Body Diode) Circuit Simulation Result 2.0A 1.5A 1.0A 0.5A 0A -0.5A -1.0A -1.5A -2.0A 2.12us 2.14us 2.16us 2.18us 2.20us 2.22us 2.24us 2.26us 2.28us 2.30us I(R1) Time Evaluation Circuit R1 2 Vsense PARAMETERS: TF = 1.6u U1 TF = {TF} V1 VPULSE 0 Compare Measurement vs. Simulation Measurement Simulation Error (%) trr 36.8 ns 36.782 ns -0.05 All Rights Reserved Copyright (c) Bee Technologies Inc. 2005
- 14. Reverse Recovery Characteristic (Body Diode) Reference Trr=36.8ns Conditions:Ifwd=di/dt=30A/us All Rights Reserved Copyright (c) Bee Technologies Inc. 2005
- 15. Zener Voltage Characteristic Circuit Simulation Result 10mA 9mA 8mA 7mA 6mA 5mA 4mA 3mA 2mA 1mA 0A 0V 5V 10V 15V 20V 25V 30V 35V 40V 45V 50V I(R1) V_V1 Evaluation Circuit R1 0.01m U30 V1 OPEN OPEN OPEN 0Vdc R2 OPEN OPEN 1MEG OPEN 0 OPEN TPC8406-H 0 All Rights Reserved Copyright (c) Bee Technologies Inc. 2005
- 16. Zener Voltage Characteristic Reference All Rights Reserved Copyright (c) Bee Technologies Inc. 2005
- 17. N-Channel Model Transconductance Characteristic Circuit Simulation Result Comparison table gfs Id(A) Error(%) Measurement Simulation 0.500 5.556 5.814 4.643 1.000 8.333 8.000 -3.996 2.000 10.530 10.929 3.788 5.000 16.129 16.234 0.649 All Rights Reserved Copyright (c) Bee Technologies Inc. 2005
- 18. Vgs-Id Characteristic Circuit Simulation result 30.0A 27.5A 25.0A 22.5A 20.0A 17.5A 15.0A 12.5A 10.0A 7.5A 5.0A 2.5A 0A 0V 0.5V 1.0V 1.5V 2.0V 2.5V 3.0V 3.5V 4.0V 4.5V 5.0V 5.5V I(V3) V_V1 Evaluation circuit U39 open R1 100MEG open open V3 open open 0 0Vdc TPC8406-H V1 V2 10Vdc 10Vdc 0 All Rights Reserved Copyright (c) Bee Technologies Inc. 2005
- 19. Comparison Graph Circuit Simulation Result Simulation Result VGS(V) ID(A) Error (%) Measurement Simulation 1.000 2.420 2.455 1.426 2.000 2.580 2.562 -0.694 5.000 2.770 2.786 0.585 10.000 3.020 3.055 1.169 20.000 3.470 3.469 -0.032 All Rights Reserved Copyright (c) Bee Technologies Inc. 2005
- 20. Rds(on) Characteristic Circuit Simulation result 3.0A 2.5A 2.0A 1.5A 1.0A 0.5A 0A 0V 50mV 100mV 150mV 200mV 250mV 300mV 350mV 400mV 450mV I(V3) V_V2 Evaluation circuit U39 open R1 100MEG open open V3 open open 0 0Vdc TPC8406-H V1 V2 4.5Vdc 10Vdc 0 Simulation Result ID=3.3A, VGS=4.5V Measurement Simulation Error (%) R DS (on) 27.000 m 27.000 m 0.000 All Rights Reserved Copyright (c) Bee Technologies Inc. 2005
- 21. Gate Charge Characteristic Circuit Simulation result 20V 18V 16V 16V 14V 8V 12V VDD=32V 10V 8V 6V 4V 2V 0V 0 2n 4n 6n 8n 10n 12n 14n 16n 18n 20n V(W1:2) Time*1ms Evaluation circuit V2 0Vdc Dbreak open open PER = 1000u W1 open open PW = 600u + D1 TF = 10n I2 TR = 10n - TPC8406-H TD = 0 W I2 = 1m IOFF = 1m 6.5Adc I1 ION = 0uA I1 = 0 V1 32Vdc 0 Simulation Result VDD=32V,ID=6.5A Measurement Simulation Error (%) ,VGS=10V Qgs 2.100 nC 2.117 nC 0.810 Qgd 2.700 nC 2.703 nC 0.111 Qg 11.000 nC 11.036 nC 0.327 All Rights Reserved Copyright (c) Bee Technologies Inc. 2005
- 22. Capacitance Characteristic Measurement Simulation Simulation Result Cbd(pF) VDS(V) Error(%) Measurement Simulation 0.100 288.8 290.000 0.416 0.300 267.75 268.000 0.093 0.600 217.5 220.000 1.149 1.000 172.5 172.000 -0.290 3.000 122.3 121.200 -0.899 6.000 69.48 68.000 -2.130 10.000 40.59 41.490 2.217 All Rights Reserved Copyright (c) Bee Technologies Inc. 2005
- 23. Switching Time Characteristic Circuit Simulation result 12V VDD = 20V Vg = 0/10.0V 8V 4V 0V 4.965us 4.980us 5.000us 5.020us 5.040us 5.060us V(2) V(3)/2 Time Evaluation circuit V3 R1 L2 3 2 0Vdc L1 4.7 30nH open open 50nH V1 = 0 V1 open open V2 = 20 TD = 5u R2 TR = 6n TPC8406-H TF = 6n 4.7 RL PW = 5u PER = 10u 6.1 0 0 VDD 20.15 0 0 Simulation Result ID=3.3 A, VDD=20V Measurement Simulation Error(%) VGS=0/10V ton 9.000 ns 9.039 ns 0.433 All Rights Reserved Copyright (c) Bee Technologies Inc. 2005
- 24. Output Characteristic Circuit Simulation result 4.0 3.8V 20A V 10V 4.5V 18A 3.6V 16A 3.4V 14A 12A 3.2V 10A 8A 3.0V 6A 4A 2.8V 2A VGS=2.6V 0A 0V 0.2V 0.4V 0.6V 0.8V 1.0V 1.2V 1.4V 1.6V 1.8V I(V3) V_V2 Evaluation circuit open open V3 open open 0Vdc TPC8406-H V1 V2 4.5Vdc 10Vdc 0 All Rights Reserved Copyright (c) Bee Technologies Inc. 2005
- 25. Forward Current Characteristic Circuit Simulation Result 100A 10A 1.0A 100mA 0V 0.2V 0.4V 0.6V 0.8V 1.0V 1.2V I(R1) V_V1 Evaluation Circuit R1 0.01m V1 0Vdc U1 0 All Rights Reserved Copyright (c) Bee Technologies Inc. 2005
- 26. Comparison Graph Circuit Simulation Result 100 Measurement Simulation Drain reverse current IDR (A) 10 1 0.1 0 0.2 0.4 0.6 0.8 1 1.2 Drain-source voltage VSD (V) Simulation Result VSD(V) IDR(A) %Error Measurement Simulation 0.1 0.6000 0.5995 -0.08 0.2 0.6200 0.6206 0.10 0.5 0.6550 0.6548 -0.03 1 0.6900 0.6874 -0.38 2 0.7200 0.7257 0.79 5 0.7950 0.7890 -0.75 10 0.8550 0.8554 0.05 20 0.9500 0.9556 0.59 All Rights Reserved Copyright (c) Bee Technologies Inc. 2005
- 27. Reverse Recovery Characteristics (Body Diode) Circuit Simulation Result 2.0A 1.5A 1.0A 0.5A 0A -0.5A -1.0A -1.5A -2.0A 2.12us 2.14us 2.16us 2.18us 2.20us 2.22us 2.24us 2.26us 2.28us 2.30us I(R1) Time Evaluation Circuit R1 Vsense PARAMETERS: TF = 1.6u TF = {TF} V1 VPULSE 0 Compare Measurement vs. Simulation Measurement Simulation Error (%) trr 32.8 ns 31.954 ns -2.58 All Rights Reserved Copyright (c) Bee Technologies Inc. 2005
- 28. Reverse Recovery Characteristic (Body Diode) Reference Trr=32.8ns Conditions:Ifwd=di/dt=30A/us All Rights Reserved Copyright (c) Bee Technologies Inc. 2005
- 29. Zener Voltage Characteristic Circuit Simulation Result 10mA 9mA 8mA 7mA 6mA 5mA 4mA 3mA 2mA 1mA 0A 0V 5V 10V 15V 20V 25V 30V 35V 40V 45V 50V I(R1) V_V1 Evaluation Circuit R1 TPC8406-H 0.01m V1 OPEN OPEN 0Vdc OPEN OPEN OPEN U30 OPEN 0 All Rights Reserved Copyright (c) Bee Technologies Inc. 2005
- 30. Zener Voltage Characteristic Reference All Rights Reserved Copyright (c) Bee Technologies Inc. 2005