This document summarizes the modeling and simulation of a MOSFET transistor. It includes: - Details of the MOSFET component, manufacturer, and model parameters. - Simulation results and comparisons to measurement data for characteristics like transconductance, Vgs-Id, Rds(on), gate charge, capacitance, switching time and more. - Circuit diagrams used to simulate the characteristics. - The document is a device modeling report from Bee Technologies providing a detailed model of a Panasonic MOSFET.

1. Device Modeling Report
COMPONENTS: MOSFET (Professional Model)
PART NUMBER: 2SJ0536
MANUFACTURER: Panasonic
Body Diode (Professional) / ESD Protection Diode
Bee Technologies Inc.
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006

2. MOSFET MODEL
Pspice model
Model description
parameter
LEVEL
L Channel Length
W Channel Width
KP Transconductance
RS Source Ohmic Resistance
RD Ohmic Drain Resistance
VTO Zero-bias Threshold Voltage
RDS Drain-Source Shunt Resistance
TOX Gate Oxide Thickness
CGSO Zero-bias Gate-Source Capacitance
CGDO Zero-bias Gate-Drain Capacitance
CBD Zero-bias Bulk-Drain Junction Capacitance
MJ Bulk Junction Grading Coefficient
PB Bulk Junction Potential
FC Bulk Junction Forward-bias Capacitance Coefficient
RG Gate Ohmic Resistance
IS Bulk Junction Saturation Current
N Bulk Junction Emission Coefficient
RB Bulk Series Resistance
PHI Surface Inversion Potential
GAMMA Body-effect Parameter
DELTA Width effect on Threshold Voltage
ETA Static Feedback on Threshold Voltage
THETA Modility Modulation
KAPPA Saturation Field Factor
VMAX Maximum Drift Velocity of Carriers
XJ Metallurgical Junction Depth
UO Surface Mobility
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006

3. Transconductance Characteristic
Circuit Simulation Result
Comparison table
gfs (s)
Id(mA) Error(%)
Measurement Simulation
-1 0.0050 0.0051 2.000
-2 0.0074 0.0072 -2.703
-5 0.0118 0.0114 -3.390
-10 0.0167 0.0162 -2.994
-20 0.0235 0.0229 -2.553
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006

4. Vgs-Id Characteristic
Circuit Simulation result
-50mA
-25mA
0A
0V -4V -8V -12V
I(V3)
V_V1
Evaluation circuit
V3
0Vdc
U1
V2
2SJ0536
-3
V1
-6
0
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006

5. Comparison Graph
Circuit Simulation Result
Simulation Result
VGS(V)
ID(mA) Error (%)
Measurement Simulation
-10 2.9 2.848 -1.793
-20 3.35 3.373 0.687
-30 3.75 3.776 0.693
-40 4.15 4.195 1.084
-50 4.55 4.777 4.989
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006

6. Rds(on) Characteristic
Circuit Simulation result
-10mA
-5mA
0A
0V -0.5V -1.0V
I(V2)
V_V3
Evaluation circuit
V2
0Vdc
U1
2SJ0536 V3
0Vdc
V1
-5
0
Simulation Result
ID=-10mA, VGS=-5V Measurement Simulation Error (%)
R DS (on) 50  50  0
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006

7. Gate Charge Characteristic
Circuit Simulation result
-20V
-18V
-16V
-14V
-12V
-10V
-8V
-6V
-4V
-2V
0V
0 0.25n 0.50n 0.75n 1.00n 1.25n 1.50n
V(W1:4)
Time*1mA
Evaluation circuit
U1
W
-
+
I2
W1 2SJ0536
D1
I1 IOFF = 100uA Dbreak -100m
ION = 0
TD = 0 ROFF = 1e6
TF = 10n RON = 1.0
PW = 200u V1
PER = 500u
I1 = 0
I2 = 1m -24
TR = 10n
0
Simulation Result
VDD=-24V,ID=-0.1A Measurement Simulation Error (%)
Qgs 0.14 nC 0.139 nC -0.714
Qgd 0.24 nC 0.243 nC 1.250
Qg 0.62 nC 0.623 nC 0.484
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006

8. Capacitance Characteristic
Measurement
Simulation
Simulation Result
Cbd(pF)
VDS(V) Error(%)
Measurement Simulation
1 4.4335 4.4 -0.756
2 3.4358 3.47 0.995
5 2.4186 2.422 0.141
10 1.8229 1.81 -0.708
20 1.3639 1.34 -1.752
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006

9. Switching Time Characteristic
Circuit Simulation result
0V
-2.0V
-4.0V
-6.0V
9.6us 10.0us 10.4us
V(VGS,VCC) V(VOUT,VCC)
Time
Evaluation circuit
VOUT
Vsense L5 RL
3
30nH 200
U1
L4 5Vdc
VD
VGS
C1
30nH
2SJ0536
100u
R5
50
VCC
Simulation Result
RL=200, VDD=-5V
Measurement Simulation Error(%)
VGS=0V~ -5V
ton 100 ns 103.588 ns 3.588
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006

10. Output Characteristic
Circuit Simulation result
-50mA
-40mA VGS=-4 V
V
-30mA
-3.5V
-20mA
-3.0V
-10mA
-2.5V
0A
0V -2V -4V -6V -8V -10V -12V
I(V3)
V_V2
Evaluation circuit
V3
0Vdc
U2
2SJ0536
V2
V1
-12
-4
0
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006

11. Reverse Drain Current Characteristic
Circuit Simulation Result
20mA
10mA
0A
0V 2.5V 5.0V
I(R1)
V_V1
Evaluation Circuit
R1
0.01m
D0536_PRO
V1
0Vdc
U1
0
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006

12. Comparison Graph
Circuit Simulation Result
VSD(V)
Simulation Result
VSD (V)
IDR (mA) %Error
Measurement Simulation
0.01 0.569 0.545 -4.218
0.02 0.611 0.607 -0.655
0.05 0.674 0.698 3.561
0.1 0.737 0.770 4.478
0.2 0.802 0.843 4.988
0.5 0.906 0.943 4.084
1 1.008 1.0246 1.647
2 1.132 1.116 -1.413
5 1.324 1.2706 -4.033
10 1.486 1.4425 -2.927
20 1.672 1.7147 2.554
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006

13. Reverse Drain Current Characteristics Reference
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006

14. Reverse Recovery Characteristic
Circuit Simulation Result
40mA
0A
-40mA
14.6us 15.0us 15.5us
I(RL)
Time
Evaluation Circuit
RL
50
U1
V1 = -0.105 V1
V2 = 2.712
TD = 0
TR = 10n
TF = 10n D0536_PRO
PW = 15u
PER = 100u
0
Compare Measurement vs. Simulation
Measurement Simulation Error (%)
trj 44 ns 44.005 ns 0.011
trb 68 ns 68.411 ns 0.604
trr 112 ns 112.466 ns 0.416
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006

15. Reverse Recovery Characteristic Reference
Trj=44(ns)
Trb=68(ns)
Conditions:Ifwd=lrev=0.02(A),Rl=50
Example
Relation between trj and trb
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006

16. Zener Voltage Characteristic
Circuit Simulation Result
1.0mA
0.5mA
0A
0V -25V -50V
I(R1)
V_V1
Evaluation Circuit
OPEN OPEN
U2 R2
R1
1G
0.01m
2SJ0536
0
V1
0Vdc
0
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006

17. Zener Voltage Characteristic Reference
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006