This document details the device modeling report for the TPC8018-H power MOSFET from Toshiba, including key parameters and simulation results. It provides comprehensive data on charactistics such as transconductance, switching times, and reverse recovery, with associated measurement and simulation comparisons. The report outlines a variety of circuit simulations that demonstrate the performance of the device across different operational conditions.

1. Device Modeling Report
COMPONENTS: Power MOSFET (Professional)
PART NUMBER: TPC8018-H
MANUFACTURER: TOSHIBA
Body Diode (Professional) / ESD Protection Diode
Bee Technologies Inc.
All Rights Reserved Copyright (c) Bee Technologies Inc. 2005

2. MOSFET MODEL
Pspice model
Model description
parameter
LEVEL
L Channel Length
W Channel Width
KP Transconductance
RS Source Ohmic Resistance
RD Ohmic Drain Resistance
VTO Zero-bias Threshold Voltage
RDS Drain-Source Shunt Resistance
TOX Gate Oxide Thickness
CGSO Zero-bias Gate-Source Capacitance
CGDO Zero-bias Gate-Drain Capacitance
CBD Zero-bias Bulk-Drain Junction Capacitance
MJ Bulk Junction Grading Coefficient
PB Bulk Junction Potential
FC Bulk Junction Forward-bias Capacitance Coefficient
RG Gate Ohmic Resistance
IS Bulk Junction Saturation Current
N Bulk Junction Emission Coefficient
RB Bulk Series Resistance
PHI Surface Inversion Potential
GAMMA Body-effect Parameter
DELTA Width effect on Threshold Voltage
ETA Static Feedback on Threshold Voltage
THETA Modility Modulation
KAPPA Saturation Field Factor
VMAX Maximum Drift Velocity of Carriers
XJ Metallurgical Junction Depth
UO Surface Mobility
All Rights Reserved Copyright (c) Bee Technologies Inc. 2005

3. Transconductance Characteristic
Circuit Simulation Result
Comparison table
gfs
Id(A) Error(%)
Measurement Simulation
5.00 33.33 34.31 2.94
9.00 45.57 45.92 0.77
15.00 59.17 59.21 0.07
All Rights Reserved Copyright (c) Bee Technologies Inc. 2005

4. Vgs-Id Characteristic
Circuit Simulation result
50A
40A
30A
20A
10A
0A
0V 0.5V 1.5V 2.5V 3.5V 4.5V 5.5V
I(V3)
V_V1
Evaluation circuit
V3
0Vdc
U1
TPC8018-H
V1 V2
10Vdc 10Vdc
0
All Rights Reserved Copyright (c) Bee Technologies Inc. 2005

5. Comparison Graph
Circuit Simulation Result
Simulation Result
VGS(V)
ID(A) Error (%)
Measurement Simulation
1.00 2.60 2.52 -3.08
2.00 2.65 2.58 -2.64
5.00 2.75 2.69 -2.18
10.00 2.85 2.81 -1.40
20.00 3.00 2.99 -0.33
50.00 3.35 3.34 -0.15
All Rights Reserved Copyright (c) Bee Technologies Inc. 2005

6. Id-Rds(on) Characteristic
Circuit Simulation result
10A
9A
8A
7A
6A
5A
4A
3A
2A
1A
0A
0V 20mV 40mV 60mV 80mV 100mV 140mV 180mV
I(V3)
V_V2
Evaluation circuit
V3
U4
TPC8018-H 0Vdc
V1
4.5Vdc
V2
10Vdc
0
Simulation Result
ID=9.0A, VGS=4.5V Measurement Simulation Error (%)
R DS (on) 4.800 m 4.805 m 0.104
All Rights Reserved Copyright (c) Bee Technologies Inc. 2005

7. Gate Charge Characteristic
Circuit Simulation result
20V
16V
VDD=6V
12V
8V
24V 12V
4V
0V
0 8n 16n 24n 32n 40n
V(W1:3)
Time*10ms
Evaluation circuit
V2
0Vdc
PER = 1000u W1
PW = 600u + Dbreak
TF = 10n
TR = 10n
-
TD = 0 W U1 D1
I2 = 100m IOFF = 100mA TPC8018-H I2
I1 ION = 0uA
I1 = 0 18Adc
V1
24Vdc
0
Simulation Result
VDD=16V,ID=3A Measurement Simulation Error (%)
,VGS=10V
Qgs 7.30 nC 7.30 nC 0.00
Qgd 9.00 nC 9.01 nC 0.11
Qg 38.00 nC 38.03 nC 0.08
All Rights Reserved Copyright (c) Bee Technologies Inc. 2005

8. Capacitance Characteristic
Measurement
Simulation
Simulation Result
Cbd(pF)
VDS(V) Error(%)
Measurement Simulation
0.50 1850.00 1859.00 0.49
1.00 1710.00 1693.00 -0.99
2.00 1455.00 1453.00 -0.14
5.00 1085.00 1060.00 -2.30
10.00 790.00 775.00 -1.90
20.00 540.00 535.00 -0.93
All Rights Reserved Copyright (c) Bee Technologies Inc. 2005

9. Switching Time Characteristic
Circuit Simulation result
15V
VDD = 15V Vg = 0/10.0V
10V
0V
4.960us 5.000us 5.040us 5.080us
V(2) V(3)/1.5
Time
Evaluation circuit
3
V3
0Vdc
L1
50nH
RL
R1 L2 1.67
2
V1 = 0 4.7 30nH
V1 VDD
V2 = 20 R2
TD = 5u
TR = 6n 4.7 15
TF = 7n
PW = 10u U1
PER = 1000u TPC8018-H
0 0 0 0
Simulation Result
ID=9 A, VDD=15V
Measurement Simulation Error(%)
VGS=0/10V
ton 14.00 ns 13.98 ns 0.00
All Rights Reserved Copyright (c) Bee Technologies Inc. 2005

10. Output Characteristic
Circuit Simulation result
50A
3.5V 3.4V
4.5V
40A
3.3V
30A 3.2V
3.1V
20A
3.0V
10A
VGS=2.8V
0A
0V 0.5V 1.0V 1.5V 2.0V 2.5V 3.0V 3.5V 4.0V 4.5V
I(V3)
V_V2
Evaluation circuit
V3
U4
TPC8018-H 0Vdc
V1
4.5Vdc
V2
10Vdc
0
All Rights Reserved Copyright (c) Bee Technologies Inc. 2005

11. Forward Current Characteristic
Circuit Simulation Result
100A
10A
1.0A
100mA
0.2V 0.4V 0.6V 0.8V 1.0V
I(V2)
V_V3
Evaluation Circuit
R1 U4
0.01m
V2
0Vdc
V3
TPC8018-H
0Vdc
0
All Rights Reserved Copyright (c) Bee Technologies Inc. 2005

12. Comparison Graph
Circuit Simulation Result
Simulation Result
Vfwd(V) Vfwd(V)
Ifwd(A) Measurement Simulation %Error
0.100 0.600 0.598 -0.333
0.200 0.615 0.616 0.163
0.500 0.642 0.641 -0.156
1.000 0.658 0.660 0.304
2.000 0.681 0.680 -0.147
5.000 0.709 0.709 0.000
10.000 0.737 0.739 0.271
20.000 0.770 0.772 0.260
All Rights Reserved Copyright (c) Bee Technologies Inc. 2005

13. Reverse Recovery Characteristic
Circuit Simulation Result
400mA
300mA
200mA
100mA
-0mA
-100mA
-200mA
-300mA
-400mA
14.7us 14.9us 15.1us 15.3us 15.5us 15.7us
I(R1)
Time
Evaluation Circuit
U1
R1
50
D8 01 8-H_ PRO
V1 = {-9 .4 3} V1
V2 = {1 0.6 }
TD = 0
TR = 10 n
TF = 10 n
PW = 1 5u
PE R = 10 0u
0 0
Compare Measurement vs. Simulation
Measurement Simulation Error (%)
trj 18.00 ns 17.77 ns -1.278
trb 134.00 ns 134.01 ns 0.007
trr=trj+trb 152.00 ns 151.78 ns -0.145
All Rights Reserved Copyright (c) Bee Technologies Inc. 2005

14. Reverse Recovery Characteristic Reference
Trj=18.00(ns)
Trb=134.00(ns)
Conditions: Ifwd=lrev=0.2(A), Rl=50
Example
Relation between trj and trb
All Rights Reserved Copyright (c) Bee Technologies Inc. 2005

15. Zener Voltage Characteristic
Circuit Simulation Result
10mA
9mA
8mA
7mA
6mA
5mA
4mA
3mA
2mA
(25.750,1.0200m)
1mA
0A
0V 5V 10V 15V 20V 25V 30V 35V 40V 45V 50V
I(V2)
V_V3
Evaluation Circuit
R1
0.0 1m
V2
0V dc
V3
Ro pe n
0V dc
10 0M EG
0
All Rights Reserved Copyright (c) Bee Technologies Inc. 2005

16. Zener Voltage Characteristic Reference
All Rights Reserved Copyright (c) Bee Technologies Inc. 2005