SPICE MODEL of TPCF8302 (Professional+BDP Model) in SPICE PARK. English Version is http://www.spicepark.net. Japanese Version is http://www.spicepark.com by Bee Technologies.

1. Device Modeling Report
COMPONENTS: Power MOSFET (Professional)
PART NUMBER: TPCF8302
MANUFACTURER: TOSHIBA
Body Diode (Professional) / ESD Protection Diode
Bee Technologies Inc.
All Rights Reserved Copyright (c) Bee Technologies Inc. 2005

2. MOSFET MODEL
Pspice model
Model description
parameter
LEVEL
L Channel Length
W Channel Width
KP Transconductance
RS Source Ohmic Resistance
RD Ohmic Drain Resistance
VTO Zero-bias Threshold Voltage
RDS Drain-Source Shunt Resistance
TOX Gate Oxide Thickness
CGSO Zero-bias Gate-Source Capacitance
CGDO Zero-bias Gate-Drain Capacitance
CBD Zero-bias Bulk-Drain Junction Capacitance
MJ Bulk Junction Grading Coefficient
PB Bulk Junction Potential
FC Bulk Junction Forward-bias Capacitance Coefficient
RG Gate Ohmic Resistance
IS Bulk Junction Saturation Current
N Bulk Junction Emission Coefficient
RB Bulk Series Resistance
PHI Surface Inversion Potential
GAMMA Body-effect Parameter
DELTA Width effect on Threshold Voltage
ETA Static Feedback on Threshold Voltage
THETA Modility Modulation
KAPPA Saturation Field Factor
VMAX Maximum Drift Velocity of Carriers
XJ Metallurgical Junction Depth
UO Surface Mobility
All Rights Reserved Copyright (c) Bee Technologies Inc. 2005

3. Transconductance Characteristic
Circuit Simulation Result
Simulation Result
VGS(V)
ID(A) Error (%)
Measurement Simulation
-0.200 3.170 3.017 -4.826
-0.500 4.600 4.717 2.543
-1.000 6.250 6.519 4.304
-2.000 9.090 8.980 -1.210
All Rights Reserved Copyright (c) Bee Technologies Inc. 2005

4. Vgs-Id Characteristic
Circuit Simulation result
-5.0A
-4.0A
-3.0A
-2.0A
-1.0A
0A
0V -1.0V -2.0V -3.0V
I(V3)
V_V1
Evaluation circuit
OPEN OPEN
OPEN OPEN
V3
0Vdc
TPCF8302
V2
V1 -10Vdc
-2.5Vdc
0
All Rights Reserved Copyright (c) Bee Technologies Inc. 2005

5. Comparison Graph
Circuit Simulation Result
Simulation Result
VGS(V)
ID(A) Error (%)
Measurement Simulation
-0.200 -1.100 -1.105 0.427
-0.500 -1.188 -1.184 -0.320
-1.000 -1.313 -1.275 -2.895
-2.000 -1.438 -1.406 -2.191
-5.000 -1.688 -1.678 -0.575
All Rights Reserved Copyright (c) Bee Technologies Inc. 2005

6. Id-Rds(on) Characteristic
Circuit Simulation result
-2.0A
-1.5A
-1.0A
-0.5A
0A
0V -50mV -125mV -200mV -275mV -350mV -425mV
I(V3)
V_V2
Evaluation circuit
OPEN OPEN
OPEN OPEN
V3
0Vdc
TPCF8302
V2
V1 -10Vdc
-2.5Vdc
0
Simulation Result
ID=-1.5, VGS=-2.5V Measurement Simulation Error (%)
R DS (on) 68 m 68 m 0
All Rights Reserved Copyright (c) Bee Technologies Inc. 2005

7. Gate Charge Characteristic
Circuit Simulation result
-10V
-8V
VGS
VDD=-4V
-6V
VDD=-8V
-4V
VDD=-16V
-2V
0V
0 4n 8n 12n 16n
V(W1:2)
Time*10ms
Evaluation circuit
V2
0Vdc
OPEN OPEN
OPEN OPEN
D1
I2
Dbreak
ION = 0uA
IOFF = 10m -3Adc
I1 = 0 W
I1 -
I2 = 10m + V1
TD = 0 -16Vdc
TR = 10n W1
TF = 10n
PW = 600u
PER = 1000u
0
Simulation Result
VDD=-8V,ID=-3A Measurement Simulation Error (%)
,VGS=-5V
Qgs 1.30 nC 1.3 nC 0.000
Qgd 2.60 nC 2.61 nC 0.385
Qg 9.50 nC 9.52 nC 0.211
All Rights Reserved Copyright (c) Bee Technologies Inc. 2005

8. Capacitance Characteristic
Measurement
Simulation
Simulation Result
Cbd(pF)
VDS(V) Error(%)
Measurement Simulation
0.100 200.000 194.000 -3.000
0.200 120.000 117.000 -2.500
0.500 44.000 42.000 -4.545
1.000 16.000 16.000 0.000
2.000 5.000 5.200 4.000
All Rights Reserved Copyright (c) Bee Technologies Inc. 2005

9. Switching Time Characteristic
Circuit Simulation result
-12V
VDS = -10V VGS = 0/-5V
-8V
-4V
0V
4.901us 4.950us 5.000us 5.050us 5.100us 5.146us
V(2)*2 V(3)
Time
Evaluation circuit
3
V3
0Vdc
L1
30nH
OPEN OPEN
OPEN OPEN
R1 L2 RL
2
6.7
4.7 30nH
V1 = 0
V1
V2 = -10 VDD
TD = 5u R2
TR = 6n
TF = 6n 4.7
PW = 5u
PER = 10u -10.15
0 0 0 0
Simulation Result
ID=-1.5A, VDD=-10V
Measurement Simulation Error(%)
VGS=0/-5V
ton 15.000 ns 14.988 ns -0.080
All Rights Reserved Copyright (c) Bee Technologies Inc. 2005

10. Output Characteristic
Circuit Simulation result
-10A
-10V
-2.5V
-9A
-3V
-8A -2.0V
-7A
-6V
-6A
-5A
--1.8V
-4A
-3A
-1.6V
-2A
-1A
VGS=-1.4V
0A
0V -0.5V -1.5V -2.5V -3.5V -4.5V
I(V3)
V_V2
Evaluation circuit
OPEN OPEN
OPEN OPEN
V3
0Vdc
V1 V2
-2.5Vdc -10Vdc
0
All Rights Reserved Copyright (c) Bee Technologies Inc. 2005

11. Forward Current Characteristic
Circuit Simulation Result
-10A
-100mA
0V 0.1V 0.2V 0.3V 0.4V 0.5V 0.6V 0.7V 0.8V 0.9V 1.0V 1.1V
I(V2)
V_V3
Evaluation Circuit
R1
0.01m
V2
0Vdc
0Vdc
V3
0
All Rights Reserved Copyright (c) Bee Technologies Inc. 2005

12. Comparison Graph
Circuit Simulation Result
Simulation Result
Vfwd(V) Vfwd(V)
Ifwd(A) %Error
Measurement Simulation
0.100 0.570 0.568 -0.439
0.200 0.600 0.600 0.050
0.500 0.650 0.654 0.569
1.000 0.705 0.707 0.270
2.000 0.780 0.775 -0.641
5.000 0.900 0.901 0.133
All Rights Reserved Copyright (c) Bee Technologies Inc. 2005

13. Reverse Recovery Characteristic
Circuit Simulation Result
400mA
0A
-400mA
15.52us 15.56us 15.60us 15.64us 15.68us 15.72us
I(R1)
Time
Evaluation Circuit
R1
50
V1 = {-9.7} V1
V2 = {10.6}
TD = 0.576u
TR = 10n
TF = 10n
PW = 15u
PER = 100u
0 0
Compare Measurement vs. Simulation
Measurement Simulation Error(%)
trj 4.500 ns 4.539 ns 0.867
trb 19.600 ns 19.773 ns 0.883
trr 24.100 ns 24.312 ns 0.880
All Rights Reserved Copyright (c) Bee Technologies Inc. 2005

14. Reverse Recovery Characteristic Reference
Trj=4.0(ns)
Trb=19.6(ns)
Conditions:Ifwd=lrev=0.2(A),Rl=50
Example
Relation between trj and trb
All Rights Reserved Copyright (c) Bee Technologies Inc. 2005

15. Zener Voltage Characteristic
Circuit Simulation Result
-10mA
-9mA
-8mA
-7mA
-6mA
-5mA
-4mA
-3mA
-2mA
-1mA
0A
0V -2V -4V -6V -8V -10V -12V -14V -16V -18V
I(V2)
V_V3
Evaluation Circuit
OPEN OPEN
OPEN OPEN
R1
OPEN
0.01m
OPEN
V2
0Vdc
0Vdc
V3
0
All Rights Reserved Copyright (c) Bee Technologies Inc. 2005

16. Zener Voltage Characteristic Reference
All Rights Reserved Copyright (c) Bee Technologies Inc. 2005