SPICE MODEL of TPC8406-H (Professional+BDP N&P Model) in SPICE PARK. English Version is http://www.spicepark.net. Japanese Version is http://www.spicepark.com by Bee Technologies.
SPICE MODEL of TPC8406-H (Professional+BDP N&P Model) in SPICE PARK
1. Device Modeling Report
COMPONENTS: Power MOSFET (Professional)
PART NUMBER: TPC8406-H
MANUFACTURER: TOSHIBA
Body Diode (Professional) / ESD Protection Diode
Remark: Silicon N&P Channel MOS Type
Bee Technologies Inc.
All Rights Reserved Copyright (c) Bee Technologies Inc. 2005
2. MOSFET MODEL
Pspice model
Model description
parameter
LEVEL
L Channel Length
W Channel Width
KP Transconductance
RS Source Ohmic Resistance
RD Ohmic Drain Resistance
VTO Zero-bias Threshold Voltage
RDS Drain-Source Shunt Resistance
TOX Gate Oxide Thickness
CGSO Zero-bias Gate-Source Capacitance
CGDO Zero-bias Gate-Drain Capacitance
CBD Zero-bias Bulk-Drain Junction Capacitance
MJ Bulk Junction Grading Coefficient
PB Bulk Junction Potential
FC Bulk Junction Forward-bias Capacitance Coefficient
RG Gate Ohmic Resistance
IS Bulk Junction Saturation Current
N Bulk Junction Emission Coefficient
RB Bulk Series Resistance
PHI Surface Inversion Potential
GAMMA Body-effect Parameter
DELTA Width effect on Threshold Voltage
ETA Static Feedback on Threshold Voltage
THETA Modility Modulation
KAPPA Saturation Field Factor
VMAX Maximum Drift Velocity of Carriers
XJ Metallurgical Junction Depth
UO Surface Mobility
All Rights Reserved Copyright (c) Bee Technologies Inc. 2005
3. P-Channel Model
Transconductance Characteristic
Circuit Simulation Result
Comparison table
gfs
Id(A) Error(%)
Measurement Simulation
-0.500 6.024 6.250 3.752
-1.000 7.692 7.813 1.563
-2.000 10.526 10.638 1.067
-5.000 15.625 15.773 0.947
All Rights Reserved Copyright (c) Bee Technologies Inc. 2005
4. Vgs-Id Characteristic
Circuit Simulation result
-25.0A
-22.5A
-20.0A
-17.5A
-15.0A
-12.5A
-10.0A
-7.5A
-5.0A
-2.5A
0A
0V -0.5V -1.0V -1.5V -2.0V -2.5V -3.0V -3.5V -4.0V -4.5V
I(V3)
V_V1
Evaluation circuit
open open
open open
open
R1
100MEG
TPC8406-H V3
0
0Vdc
V1 V2
-4.5Vdc -10Vdc
0
All Rights Reserved Copyright (c) Bee Technologies Inc. 2005
5. Comparison Graph
Circuit Simulation Result
Simulation Result
VGS(V)
ID(A) Error (%)
Measurement Simulation
-1.000 -2.050 -2.030 -0.985
-2.000 -2.150 -2.141 -0.428
-5.000 -2.400 -2.372 -1.183
-10.000 -2.650 -2.649 -0.053
-20.000 -3.050 -3.071 0.679
All Rights Reserved Copyright (c) Bee Technologies Inc. 2005
6. Rds(on) Characteristic
Circuit Simulation result
-3.0A
-2.0A
-1.0A
0A
0V -50mV -150mV -250mV -350mV -450mV
I(V3)
V_V2
Evaluation circuit
open open
open open
open
R1
100MEG
TPC8406-H V3
0
0Vdc
V1 V2
-4.5Vdc 10Vdc
0
Simulation Result
ID=-3.3A, VGS=-4.5V Measurement Simulation Error (%)
R DS (on) 29.000 m 29.000 m 0.000
All Rights Reserved Copyright (c) Bee Technologies Inc. 2005
7. Gate Charge Characteristic
Circuit Simulation result
-20V
-18V
-16V
-16V
-14V -8V
-12V VDD=-32V
-10V
-8V
-6V
-4V
-2V
0V
0 5n 10n 15n 20n 25n 30n 35n 40n 45n 50n
V(W1:2)
Time*1ms
Evaluation circuit
open open
open open V2
0Vdc
open
ION = 0uA
IOFF = 1m TPC8406-H
W D1 R1
- 100MEG
I1 = 0 + I2
I1 Dbreak
I2 = 1m W1 0
TD = 0 -6.5Adc
TR = 10n
TF = 10n
PW = 600u V1
PER = 1000u -32Vdc
0
Simulation Result
VDD=-32V,ID=-6.5A Measurement Simulation Error (%)
,VGS=-10V
Qgs 3.200 nC 3.261 nC 1.903
Qgd 8.100 nC 7.935 nC -2.040
Qg 27.000 nC 27.065 nC 0.241
All Rights Reserved Copyright (c) Bee Technologies Inc. 2005
14. Reverse Recovery Characteristic Reference
Trj=8.8(ns)
Trb=34.0(ns)
Conditions:Ifwd=lrev=0.2(A),Rl=50
Example
Relation between trj and trb
All Rights Reserved Copyright (c) Bee Technologies Inc. 2005
15. Zener Voltage Characteristic
Circuit Simulation Result
10mA
9mA
8mA
7mA
6mA
5mA
4mA
3mA
2mA
1mA
0A
0V 5V 10V 15V 20V 25V 30V 35V 40V 45V 50V
I(R1)
V_V1
Evaluation Circuit
R1
0.01m
U30
V1 OPEN
OPEN OPEN
0Vdc R2
OPEN OPEN 1MEG
OPEN
0
OPEN
TPC8406-H
0
All Rights Reserved Copyright (c) Bee Technologies Inc. 2005
23. Switching Time Characteristic
Circuit Simulation result
12V
VDD = 20V Vg = 0/10.0V
8V
4V
0V
4.965us 4.980us 5.000us 5.020us 5.040us 5.060us
V(2) V(3)/2
Time
Evaluation circuit
V3
R1 L2 3
2 0Vdc
L1
4.7 30nH
open open 50nH
V1 = 0
V1 open open
V2 = 20
TD = 5u R2
TR = 6n TPC8406-H
TF = 6n 4.7 RL
PW = 5u
PER = 10u 6.1
0 0 VDD
20.15
0
0
Simulation Result
ID=3.3 A, VDD=20V
Measurement Simulation Error(%)
VGS=0/10V
ton 9.000 ns 9.039 ns 0.433
All Rights Reserved Copyright (c) Bee Technologies Inc. 2005
24. Output Characteristic
Circuit Simulation result
4.0 3.8V
20A
V
10V
4.5V
18A
3.6V
16A
3.4V
14A
12A
3.2V
10A
8A
3.0V
6A
4A 2.8V
2A
VGS=2.6V
0A
0V 0.2V 0.4V 0.6V 0.8V 1.0V 1.2V 1.4V 1.6V 1.8V
I(V3)
V_V2
Evaluation circuit
open open
V3
open open
0Vdc
TPC8406-H
V1 V2
4.5Vdc 10Vdc
0
All Rights Reserved Copyright (c) Bee Technologies Inc. 2005
25. Forward Current Characteristic
Circuit Simulation Result
30A
10A
1.0A
100mA
0V -0.2V -0.4V -0.6V -0.8V -1.0V -1.2V
I(V2)
V_V3
Evaluation Circuit
R1
0Vdc
0.01m OPEN
OPEN
V2
V3
U30
TPC8406-H
0Vdc
OPEN
OPEN
0
All Rights Reserved Copyright (c) Bee Technologies Inc. 2005
28. Reverse Recovery Characteristic Reference
Trj=7.2(ns)
Trb=32.0(ns)
Conditions:Ifwd=lrev=0.2(A),Rl=50
Example
Relation between trj and trb
All Rights Reserved Copyright (c) Bee Technologies Inc. 2005
29. Zener Voltage Characteristic
Circuit Simulation Result
10mA
9mA
8mA
7mA
6mA
5mA
4mA
3mA
2mA
1mA
0A
0V 5V 10V 15V 20V 25V 30V 35V 40V 45V 50V
I(R1)
V_V1
Evaluation Circuit
R1
TPC8406-H
0.01m
V1
OPEN OPEN
0Vdc
OPEN OPEN
OPEN
U30 OPEN
0
All Rights Reserved Copyright (c) Bee Technologies Inc. 2005