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Device Modeling Report



COMPONENTS: Power MOSFET (Model Parameter)
PART NUMBER: TPC8203
MANUFACTURER: TOSHIBA
Body Diode (Model Parameter) / ESD Protection Diode




                  Bee Technologies Inc.




    All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
Circuit Configuration




                TPC8203




MOSFET MODEL
 Pspice model
                                          Model description
   parameter
LEVEL
L               Channel Length
W               Channel Width
KP              Transconductance
RS              Source Ohmic Resistance
RD              Ohmic Drain Resistance
VTO             Zero-bias Threshold Voltage
RDS             Drain-Source Shunt Resistance
TOX             Gate Oxide Thickness
CGSO            Zero-bias Gate-Source Capacitance
CGDO            Zero-bias Gate-Drain Capacitance
CBD             Zero-bias Bulk-Drain Junction Capacitance
MJ              Bulk Junction Grading Coefficient
PB              Bulk Junction Potential
FC              Bulk Junction Forward-bias Capacitance Coefficient
RG              Gate Ohmic Resistance
IS              Bulk Junction Saturation Current
N               Bulk Junction Emission Coefficient
RB              Bulk Series Resistance
PHI             Surface Inversion Potential
GAMMA           Body-effect Parameter
DELTA           Width effect on Threshold Voltage
ETA             Static Feedback on Threshold Voltage
THETA           Modility Modulation
KAPPA           Saturation Field Factor
VMAX            Maximum Drift Velocity of Carriers
XJ              Metallurgical Junction Depth
UO              Surface Mobility




            All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
Transconductance Characteristic

Circuit Simulation Result




Comparison table


                                          gfs
      Id(A)                                                                   Error(%)
                      Measurement                   Simulation
         0.500                       7.000                      6.950             -0.714
         1.000                       9.500                      9.480             -0.211
         2.000                      13.000                     13.230             1.769
         5.000                      19.000                     19.370             1.947




               All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
Vgs-Id Characteristic

Circuit Simulation result


          8.0A




          6.0A




          4.0A




          2.0A




            0A
                 0V           1.0V      2.0V      3.0V        4.0V           5.0V        6.0V
                      I(V3)
                                                  V_V2




Evaluation circuit


                                        U17              V3


                                                              0Vdc

                                 open             open
                                                                             open
                                 open             open               V1

                                        TPC8203
                                                                     10Vdc          R1
                       V2
                       0Vdc                                                         100MEG



                                                                                0




                                 0




                  All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
Comparison Graph

Circuit Simulation Result




Simulation Result


                                       VGS(V)
       ID(A)                                                              Error (%)
                     Measurement                  Simulation
         1.000                     2.300                      2.303             0.130
         2.000                     2.400                      2.392            -0.333
         4.000                     2.520                      2.524             0.159
         6.000                     2.630                      2.631             0.038
         8.000                     2.720                      2.723             0.110




               All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
Rds(on) Characteristic

Circuit Simulation result

            5.0A




            4.0A




            3.0A




            2.0A




            1.0A




              0A
                   0V             20mV                40mV            60mV               80mV            100mV
                        I(V3)
                                                             V_VDS


Evaluation circuit

                                                U17                  V3


                                                                          0Vdc

                                                                                       open
                                         open                 open

                                         open                 open
                                VGS                                       0Vdc   VDS          Ropen
                        10Vdc                   TPC8203
                                                                                              100MEG



                                                                                          0




                                      0



Simulation Result

      ID=3.0A, VGS=10V                Measurement                         Simulation                   Error (%)
           R DS (on)                            14.000 m                  14.000 m                       0.000



                All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
Gate Charge Characteristic
Circuit Simulation result

            10V




              5V




              0V
                   0              10n                20n              30n                  40n              50n
                        V(W1:3)
                                                           Time*1mS


Evaluation circuit

                                                           U18           V2


                                                                               0Vdc

                                                 open                   open                             open
                                                                                  Dbreak
         PER = 1000u              W1             open                   open
         PW = 600u                  +
         TF = 10n                                                                     D1
         TR = 10n
                                    -                      TPC8203                               I2             Ropen
         TD = 0                   W                                                              6Adc
         I2 = 1m                  IOFF = 100uA                                                                  100MEG
                        I1        ION = 0uA
         I1 = 0

                                                                                                 V1         0
                                                                                                 24Vdc



                                                 0



Simulation Result

     VDD=24V,ID=6.0A                Measurement                      Simulation                  Error (%)
        ,VGS=10V
          Qgs                              4.700 nC                    4.719 nC                           0.404
          Qgd                             10.000 nC                   10.112 nC                           1.120
           Qg                             40.000 nC                   28.627 nC                         -28.433


                       All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
Capacitance Characteristic




                                                              Measurement
                                                               Simulation




Simulation Result


                                       Cbd(nF)
          VDS(V)                                                      Error(%)
                        Measurement              Simulation
              0.100                 1.000                  1.024              2.400
              0.200                 0.940                  0.940              0.000
              0.500                 0.800                  0.797             -0.375
              1.000                 0.650                  0.648             -0.308
              2.000                 0.480                  0.481              0.208
              5.000                 0.270                  0.267             -1.111
             10.000                 0.160                  0.155             -3.125
             20.000                 0.100                  0.102              2.000




              All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
Switching Time Characteristic

Circuit Simulation result

            14




            10




                 5




                 0


            1.95us                     2.00us                         2.05us              2.10us
                 V(R1:1)         V(L2:1)/1.5
                                                        Time

Evaluation circuit

                                                  U17                 L2        R2

                            RG    L1
                                                                      50nH      5

                                  30nH
                                           open                open                      open
                          4.7
                                           open                open
       V1 = 0
       V2 = 20       V2          R1
       TD = 2u                                    TPC8203                         V1            Ropen
                                 4.7                                           15Vdc
       TR = 6n                                                                                  100MEG
       TF = 7n
       PW = 20u
       PER = 2000u
                                                                                            0



                                           0


Simulation Result

        ID=3.0A, VDD=15V
                                         Measurement            Simulation             Error(%)
           VGS=0/10V
               ton                         20.000 ns           20.052          ns           0.260



                     All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
Output Characteristic

Circuit Simulation result



          10A

                      10V
                       8V
                                                                                            2.8V
                       6V
           8A
                       4V
                                                                                             2.75V

                                                                                             2.7V
           6A
                                                                                            2.65V
                                                                                             2.6V
           4A

                                                                                   VGS=2.5V

           2A




           0A
                0V           1.0V                2.0V             3.0V             4.0V              5.0V
                     I(Vdsense)
                                                   V_Vvariable


Evaluation circuit


                                                               Vdsense


                                                                    0Vdc

                                                                           Vv ariable
                                open                    open
                        Vstep                                                      open
                                open                    open
                                                                           10Vdc

                       10Vdc           TPC8203
                                                                                            R1
                                                                                            100MEG




                                                                                        0

                                                   0




                     All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
Forward Current Characteristic

Circuit Simulation Result




            10A




           1.0A




          100mA
                  0V                 0.4V                  0.8V                       1.2V
                       I(R1)
                                              V_V1



Evaluation Circuit


                                    R1

                                    0.01m
                                                      openopen
                                                                           open


                                                                 TPC8203
                               V1                                U18              Ropen
                       0Vdc
                                                                                  100MEG



                                                      openopen                0



                                                  0




               All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
Comparison Graph

Circuit Simulation Result




Simulation Result


                          VDS (V)                   VDS (V)
       IDR (A)          Measurement                Simulation             %Error
            0.100                 0.600                     0.597            -0.500
            0.200                 0.620                     0.624             0.645
            0.500                 0.660                     0.662             0.303
            1.000                 0.700                     0.695            -0.714
            2.000                 0.740                     0.734            -0.811
            5.000                 0.800                     0.806             0.750
          10.000                  0.900                     0.894            -0.667




               All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
Reverse Recovery Characteristic

Circuit Simulation Result

       400mA


       300mA


       200mA


       100mA


        -0mA


      -100mA


      -200mA


      -300mA


      -400mA
               0.9us                  1.0us              1.1us                         1.2us
                  I(R1)
                                              Time
Evaluation Circuit

                                         R1

                                         50
                                                         openopen
                                                                              open


                                                                    TPC8203
                   V1 = -9.4v    V1                                 U19              Ropen
                   V2 = 10.6v
                   TD = 0                                                            100MEG
                   TR = 10ns
                   TF = 10ns
                   PW = 1us
                   PER = 100us                           openopen                0



                                                     0



Compare Measurement vs. Simulation

                          Measurement                Simulation                              Error (%)
           trj                   10.300 ns               10.344 ns                                 0.427
          trb                    65.300 ns               80.020 ns                               22.542
          trr                    75.600 ns               90.364 ns                               19.529




                 All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
Reverse Recovery Characteristic                                        Reference




Trj=10.3(ns)
Trb=65.3(ns)
Conditions:Ifwd=lrev=0.2(A),Rl=50




                                                     Example




                               Relation between trj and trb




              All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
Zener Voltage Characteristic
Circuit Simulation Result



          10mA

           9mA

           8mA

           7mA

           6mA

           5mA

           4mA

           3mA

           2mA

           1mA

            0A
                 0V      5V    10V        15V   20V      25V    30V   35V          40V      45V    50V
                      I(R1)
                                                         V_V1




Evaluation Circuit


                                     R1

                                     0.01m                            U17          open
                                                  open                      open

                          V1                      open                      open
                                                                                          Ropen
                  0Vdc
                                                                            open          100MEG

                                                                            open

                                                                  TPC8203             0


                          0




                 All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
Zener Voltage Characteristic                                         Reference




            All Rights Reserved Copyright (c) Bee Technologies Inc. 2006

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SPICE MODEL of TPC8203 (Standard+BDS Model) in SPICE PARK

  • 1. Device Modeling Report COMPONENTS: Power MOSFET (Model Parameter) PART NUMBER: TPC8203 MANUFACTURER: TOSHIBA Body Diode (Model Parameter) / ESD Protection Diode Bee Technologies Inc. All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
  • 2. Circuit Configuration TPC8203 MOSFET MODEL Pspice model Model description parameter LEVEL L Channel Length W Channel Width KP Transconductance RS Source Ohmic Resistance RD Ohmic Drain Resistance VTO Zero-bias Threshold Voltage RDS Drain-Source Shunt Resistance TOX Gate Oxide Thickness CGSO Zero-bias Gate-Source Capacitance CGDO Zero-bias Gate-Drain Capacitance CBD Zero-bias Bulk-Drain Junction Capacitance MJ Bulk Junction Grading Coefficient PB Bulk Junction Potential FC Bulk Junction Forward-bias Capacitance Coefficient RG Gate Ohmic Resistance IS Bulk Junction Saturation Current N Bulk Junction Emission Coefficient RB Bulk Series Resistance PHI Surface Inversion Potential GAMMA Body-effect Parameter DELTA Width effect on Threshold Voltage ETA Static Feedback on Threshold Voltage THETA Modility Modulation KAPPA Saturation Field Factor VMAX Maximum Drift Velocity of Carriers XJ Metallurgical Junction Depth UO Surface Mobility All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
  • 3. Transconductance Characteristic Circuit Simulation Result Comparison table gfs Id(A) Error(%) Measurement Simulation 0.500 7.000 6.950 -0.714 1.000 9.500 9.480 -0.211 2.000 13.000 13.230 1.769 5.000 19.000 19.370 1.947 All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
  • 4. Vgs-Id Characteristic Circuit Simulation result 8.0A 6.0A 4.0A 2.0A 0A 0V 1.0V 2.0V 3.0V 4.0V 5.0V 6.0V I(V3) V_V2 Evaluation circuit U17 V3 0Vdc open open open open open V1 TPC8203 10Vdc R1 V2 0Vdc 100MEG 0 0 All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
  • 5. Comparison Graph Circuit Simulation Result Simulation Result VGS(V) ID(A) Error (%) Measurement Simulation 1.000 2.300 2.303 0.130 2.000 2.400 2.392 -0.333 4.000 2.520 2.524 0.159 6.000 2.630 2.631 0.038 8.000 2.720 2.723 0.110 All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
  • 6. Rds(on) Characteristic Circuit Simulation result 5.0A 4.0A 3.0A 2.0A 1.0A 0A 0V 20mV 40mV 60mV 80mV 100mV I(V3) V_VDS Evaluation circuit U17 V3 0Vdc open open open open open VGS 0Vdc VDS Ropen 10Vdc TPC8203 100MEG 0 0 Simulation Result ID=3.0A, VGS=10V Measurement Simulation Error (%) R DS (on) 14.000 m 14.000 m 0.000 All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
  • 7. Gate Charge Characteristic Circuit Simulation result 10V 5V 0V 0 10n 20n 30n 40n 50n V(W1:3) Time*1mS Evaluation circuit U18 V2 0Vdc open open open Dbreak PER = 1000u W1 open open PW = 600u + TF = 10n D1 TR = 10n - TPC8203 I2 Ropen TD = 0 W 6Adc I2 = 1m IOFF = 100uA 100MEG I1 ION = 0uA I1 = 0 V1 0 24Vdc 0 Simulation Result VDD=24V,ID=6.0A Measurement Simulation Error (%) ,VGS=10V Qgs 4.700 nC 4.719 nC 0.404 Qgd 10.000 nC 10.112 nC 1.120 Qg 40.000 nC 28.627 nC -28.433 All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
  • 8. Capacitance Characteristic Measurement Simulation Simulation Result Cbd(nF) VDS(V) Error(%) Measurement Simulation 0.100 1.000 1.024 2.400 0.200 0.940 0.940 0.000 0.500 0.800 0.797 -0.375 1.000 0.650 0.648 -0.308 2.000 0.480 0.481 0.208 5.000 0.270 0.267 -1.111 10.000 0.160 0.155 -3.125 20.000 0.100 0.102 2.000 All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
  • 9. Switching Time Characteristic Circuit Simulation result 14 10 5 0 1.95us 2.00us 2.05us 2.10us V(R1:1) V(L2:1)/1.5 Time Evaluation circuit U17 L2 R2 RG L1 50nH 5 30nH open open open 4.7 open open V1 = 0 V2 = 20 V2 R1 TD = 2u TPC8203 V1 Ropen 4.7 15Vdc TR = 6n 100MEG TF = 7n PW = 20u PER = 2000u 0 0 Simulation Result ID=3.0A, VDD=15V Measurement Simulation Error(%) VGS=0/10V ton 20.000 ns 20.052 ns 0.260 All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
  • 10. Output Characteristic Circuit Simulation result 10A 10V 8V 2.8V 6V 8A 4V 2.75V 2.7V 6A 2.65V 2.6V 4A VGS=2.5V 2A 0A 0V 1.0V 2.0V 3.0V 4.0V 5.0V I(Vdsense) V_Vvariable Evaluation circuit Vdsense 0Vdc Vv ariable open open Vstep open open open 10Vdc 10Vdc TPC8203 R1 100MEG 0 0 All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
  • 11. Forward Current Characteristic Circuit Simulation Result 10A 1.0A 100mA 0V 0.4V 0.8V 1.2V I(R1) V_V1 Evaluation Circuit R1 0.01m openopen open TPC8203 V1 U18 Ropen 0Vdc 100MEG openopen 0 0 All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
  • 12. Comparison Graph Circuit Simulation Result Simulation Result VDS (V) VDS (V) IDR (A) Measurement Simulation %Error 0.100 0.600 0.597 -0.500 0.200 0.620 0.624 0.645 0.500 0.660 0.662 0.303 1.000 0.700 0.695 -0.714 2.000 0.740 0.734 -0.811 5.000 0.800 0.806 0.750 10.000 0.900 0.894 -0.667 All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
  • 13. Reverse Recovery Characteristic Circuit Simulation Result 400mA 300mA 200mA 100mA -0mA -100mA -200mA -300mA -400mA 0.9us 1.0us 1.1us 1.2us I(R1) Time Evaluation Circuit R1 50 openopen open TPC8203 V1 = -9.4v V1 U19 Ropen V2 = 10.6v TD = 0 100MEG TR = 10ns TF = 10ns PW = 1us PER = 100us openopen 0 0 Compare Measurement vs. Simulation Measurement Simulation Error (%) trj 10.300 ns 10.344 ns 0.427 trb 65.300 ns 80.020 ns 22.542 trr 75.600 ns 90.364 ns 19.529 All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
  • 14. Reverse Recovery Characteristic Reference Trj=10.3(ns) Trb=65.3(ns) Conditions:Ifwd=lrev=0.2(A),Rl=50 Example Relation between trj and trb All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
  • 15. Zener Voltage Characteristic Circuit Simulation Result 10mA 9mA 8mA 7mA 6mA 5mA 4mA 3mA 2mA 1mA 0A 0V 5V 10V 15V 20V 25V 30V 35V 40V 45V 50V I(R1) V_V1 Evaluation Circuit R1 0.01m U17 open open open V1 open open Ropen 0Vdc open 100MEG open TPC8203 0 0 All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
  • 16. Zener Voltage Characteristic Reference All Rights Reserved Copyright (c) Bee Technologies Inc. 2006