This document summarizes the key components and modeling parameters of the TPC6104 power MOSFET manufactured by Toshiba. It includes: 1) Details of the MOSFET and diode components, manufacturer, and part number. 2) Descriptions and values of the various MOSFET model parameters used in circuit simulations. 3) Results of simulations validating the MOSFET model against measurements of electrical characteristics like transconductance, Vgs-Id, and switching times. 4) Explanations of the evaluation circuits used to simulate the electrical behaviors.

1. Device Modeling Report
COMPONENTS: Power MOSFET (Professional)
PART NUMBER: TPC6104
MANUFACTURER: TOSHIBA
Body Diode (Professional) / ESD Protection Diode
Bee Technologies Inc.
All Rights Reserved Copyright (c) Bee Technologies Inc. 2005

2. MOSFET MODEL
Pspice model
Model description
parameter
LEVEL
L Channel Length
W Channel Width
KP Transconductance
RS Source Ohmic Resistance
RD Ohmic Drain Resistance
VTO Zero-bias Threshold Voltage
RDS Drain-Source Shunt Resistance
TOX Gate Oxide Thickness
CGSO Zero-bias Gate-Source Capacitance
CGDO Zero-bias Gate-Drain Capacitance
CBD Zero-bias Bulk-Drain Junction Capacitance
MJ Bulk Junction Grading Coefficient
PB Bulk Junction Potential
FC Bulk Junction Forward-bias Capacitance Coefficient
RG Gate Ohmic Resistance
IS Bulk Junction Saturation Current
N Bulk Junction Emission Coefficient
RB Bulk Series Resistance
PHI Surface Inversion Potential
GAMMA Body-effect Parameter
DELTA Width effect on Threshold Voltage
ETA Static Feedback on Threshold Voltage
THETA Modility Modulation
KAPPA Saturation Field Factor
VMAX Maximum Drift Velocity of Carriers
XJ Metallurgical Junction Depth
UO Surface Mobility
All Rights Reserved Copyright (c) Bee Technologies Inc. 2005

3. Transconductance Characteristic
Circuit Simulation Result
Simulation Result
VGS(V)
ID(A) Error (%)
Measurement Simulation
-0.200 3.333 3.335 0.060
-0.500 5.100 5.113 0.255
-1.000 7.143 7.063 -1.120
-2.000 9.756 9.723 -0.338
All Rights Reserved Copyright (c) Bee Technologies Inc. 2005

4. Vgs-Id Characteristic
Circuit Simulation result
-10A
-9A
-8A
-7A
-6A
-5A
-4A
-3A
-2A
-1A
0A
0V -0.25V -0.75V -1.25V -1.75V -2.25V -2.75V
I(V3)
V_V1
Evaluation circuit
V3
0Vdc
V2
V1 -10Vdc
-2.5Vdc
0
All Rights Reserved Copyright (c) Bee Technologies Inc. 2005

5. Comparison Graph
Circuit Simulation Result
Simulation Result
VGS(V)
ID(A) Error (%)
Measurement Simulation
-0.200 -1.195 -1.199 0.360
-0.500 -1.275 -1.272 -0.227
-1.000 -1.360 -1.356 -0.309
-2.000 -1.480 -1.477 -0.189
-5.000 -1.700 -1.728 1.671
All Rights Reserved Copyright (c) Bee Technologies Inc. 2005

6. Id-Rds(on) Characteristic
Circuit Simulation result
-3.0A
(-137.200m,-2.8000)
-2.5A
-2.0A
-1.5A
-1.0A
-0.5A
0A
0V -50mV -150mV -250mV -350mV -450mV
I(V3)
V_V2
Evaluation circuit
V3
0Vdc
V2
V1 -10Vdc
-2.5Vdc
0
Simulation Result
ID=-2.8, VGS=-2.5V Measurement Simulation Error (%)
R DS (on) 49 m 49 m 0
All Rights Reserved Copyright (c) Bee Technologies Inc. 2005

7. Gate Charge Characteristic
Circuit Simulation result
-10V
-9V
VGS
-8V
-7V
-6V
VDD=-4V
-5V VDD=-8V
-4V
-3V VDD=-16V
-2V
-1V
0V
0 4n 8n 12n 16n 20n 24n 28n 32n 36n 40n
V(W1:2)
Time*10ms
Evaluation circuit
V2
0Vdc
D1
I2
Dbreak
ION = 0uA
IOFF = 10m -6Adc
I1 = 0 W
I1 -
I2 = 10m + V1
TD = 0 -16Vdc
TR = 10n W1
TF = 10n
PW = 600u
PER = 1000u
0
Simulation Result
VDD=-8V,ID=-6A Measurement Simulation Error (%)
,VGS=-5V
Qgs 4.500 nC 4.555 nC 1.222
Qgd 5.000 nC 5.050 nC 1.000
Qg 22.250 nC 22.277 nC 0.121
All Rights Reserved Copyright (c) Bee Technologies Inc. 2005

8. Capacitance Characteristic
Measurement
Simulation
Simulation Result
Cbd(pF)
VDS(V) Error(%)
Measurement Simulation
0.1 98.0 97.2 -0.8
0.2 86.0 86.2 0.2
0.5 67.0 66.7 -0.4
1.0 50.0 50.0 0.0
2.0 35.0 35.1 0.3
All Rights Reserved Copyright (c) Bee Technologies Inc. 2005

9. Switching Time Characteristic
Circuit Simulation result
-12V
VDS = -10V VGS = 0/-5V
-8V
-4V
0V
4.901us 5.000us 5.100us
V(2)*2 V(3)
Time
Evaluation circuit
V3 3
0Vdc
L1
30nH
R1 L2 RL
2
3.6
4.7 30nH
V1 = 0
V1
V2 = -10 VDD
TD = 5u R2
TR = 6n
TF = 6n 4.7
PW = 5u
PER = 10u -10.15
0 0 0 0
Simulation Result
ID=-2.8A, VDD=-10V
Measurement Simulation Error(%)
VGS=0/-5V
ton 15.000 ns 15.027 ns 0.180
All Rights Reserved Copyright (c) Bee Technologies Inc. 2005

10. Output Characteristic
Circuit Simulation result
-10A
-5V -2.5V
-2.1V -2.0V
-9A
-8A -3V
-7A
-6A -4V --1.8V
-5A
-4A
-1.6V
-3A
-2A
VGS=-1.4V
-1A
0A
0V -0.5V -1.5V -2.5V -3.5V -4.5V
I(V3)
V_V2
Evaluation circuit
V3
0Vdc
V2
V1 -10Vdc
-2.5Vdc
0
All Rights Reserved Copyright (c) Bee Technologies Inc. 2005

11. Forward Current Characteristic
Circuit Simulation Result
-20A
-1.0A
0V 0.4V 0.8V 1.2V
I(V2)
V_V3
Evaluation Circuit
R1
0.01m
V2
0Vdc
0Vdc
V3
0
All Rights Reserved Copyright (c) Bee Technologies Inc. 2005

12. Comparison Graph
Circuit Simulation Result
Simulation Result
Vfwd(V) Vfwd(V)
Ifwd(A) %Error
Measurement Simulation
1.000 0.700 0.700 -0.071
2.000 0.750 0.753 0.360
5.000 0.830 0.834 0.530
10.000 0.915 0.915 -0.033
20.000 1.030 1.029 -0.087
All Rights Reserved Copyright (c) Bee Technologies Inc. 2005

13. Reverse Recovery Characteristic
Circuit Simulation Result
400mA
0A
-400mA
15.54us 15.58us 15.62us 15.66us 15.70us 15.74us
I(R1)
Time
Evaluation Circuit
R1
50
V1 = {-9.7} V1
V2 = {10.6}
TD = 0.576u
TR = 10n
TF = 10n
PW = 15u
PER = 100u
0 0
Compare Measurement vs. Simulation
Measurement Simulation Error(%)
trj 8.00 ns 7.93 ns -0.875
trb 31.20 ns 31.31 ns 0.353
trr 39.20 ns 39.24 ns 0.102
All Rights Reserved Copyright (c) Bee Technologies Inc. 2005

14. Reverse Recovery Characteristic Reference
Trj=8.0(ns)
Trb=31.2(ns)
Conditions:Ifwd=lrev=0.2(A),Rl=50
Example
Relation between trj and trb
All Rights Reserved Copyright (c) Bee Technologies Inc. 2005

15. Zener Voltage Characteristic
Circuit Simulation Result
-10mA
-9mA
-8mA
-7mA
-6mA
-5mA
-4mA
-3mA
-2mA
-1mA
0A
0V -2V -4V -6V -8V -10V -12V -14V -16V -18V
I(V2)
V_V3
Evaluation Circuit
R1
0.01m
OPEN
OPEN
V2
TPC6104
0Vdc U25
V3
0Vdc
OPEN
OPEN
0
All Rights Reserved Copyright (c) Bee Technologies Inc. 2005

16. Zener Voltage Characteristic Reference
All Rights Reserved Copyright (c) Bee Technologies Inc. 2005