This document summarizes the modeling of a power MOSFET and its components. It includes: 1) SPICE models for the power MOSFET, body diode, and ESD protection diode with descriptions of each model parameter. 2) Simulation results graphs that compare measurements to simulations for various electrical characteristics like transconductance, capacitance, switching times, and more. 3) Evaluation circuits used to simulate the electrical behavior and extract model parameters.

1. Device Modeling Report
COMPONENTS: Power MOSFET (Standard)
PART NUMBER: TPC6005
MANUFACTURER: TOSHIBA
Body Diode (Standard) / ESD Protection Diode
Bee Technologies Inc.
All Rights Reserved Copyright (c) Bee Technologies Inc. 2005

2. POWER MOSFET MODEL
Pspice model
Model description
parameter
LEVEL
L Channel Length
W Channel Width
KP Transconductance
RS Source Ohmic Resistance
RD Ohmic Drain Resistance
VTO Zero-bias Threshold Voltage
RDS Drain-Source Shunt Resistance
TOX Gate Oxide Thickness
CGSO Zero-bias Gate-Source Capacitance
CGDO Zero-bias Gate-Drain Capacitance
CBD Zero-bias Bulk-Drain Junction Capacitance
MJ Bulk Junction Grading Coefficient
PB Bulk Junction Potential
FC Bulk Junction Forward-bias Capacitance Coefficient
RG Gate Ohmic Resistance
IS Bulk Junction Saturation Current
N Bulk Junction Emission Coefficient
RB Bulk Series Resistance
PHI Surface Inversion Potential
GAMMA Body-effect Parameter
DELTA Width effect on Threshold Voltage
ETA Static Feedback on Threshold Voltage
THETA Modility Modulation
KAPPA Saturation Field Factor
VMAX Maximum Drift Velocity of Carriers
XJ Metallurgical Junction Depth
UO Surface Mobility
All Rights Reserved Copyright (c) Bee Technologies Inc. 2005

3. Body Diode Model
Pspice model
Model description
parameter
IS Saturation Current
N Emission Coefficient
RS Series Resistance
IKF High-injection Knee Current
CJO Zero-bias Junction Capacitance
M Junction Grading Coefficient
VJ Junction Potential
ISR Recombination Current Saturation Value
BV Reverse Breakdown Voltage(a positive value)
IBV Reverse Breakdown Current(a positive value)
TT Transit Time
All Rights Reserved Copyright (c) Bee Technologies Inc. 2005

4. Transconductance Characteristic
Circuit Simulation Result
Comparison table
VGS(V)
ID(A) Error (%)
Measurement Simulation
0.50 7.60 7.63 0.39
1.00 10.00 10.09 0.90
2.00 13.00 13.10 0.77
5.00 17.90 17.70 -1.12
All Rights Reserved Copyright (c) Bee Technologies Inc. 2005

5. Vgs-Id Characteristic
Circuit Simulation result
12A
10A
8A
6A
4A
2A
0A
0V 0.5V 1.0V 1.5V 2.0V 2.5V
I(V2)
V_V1
Evaluation circuit
OP EN
OP EN
OP EN V2
0V dc
R1
10 0M EG
V1 V3
10 Vd c 10 Vd c
0
0
All Rights Reserved Copyright (c) Bee Technologies Inc. 2005

6. Comparison Graph
Circuit Simulation Result
Simulation Result
VGS(V)
ID(A) Error (%)
Measurement Simulation
0.10 1.10 1.10 0.00
0.20 1.12 1.13 0.89
0.50 1.17 1.17 0.00
1.00 1.24 1.24 -0.40
2.00 1.32 1.32 0.00
5.00 1.49 1.50 0.67
All Rights Reserved Copyright (c) Bee Technologies Inc. 2005

7. Id-Rds(on) Characteristic
Circuit Simulation result
5.0A
4.0A
3.0A
2.0A
1.0A
0A
0V 100mV 200mV 300mV 400mV 500mV
I(V2)
V_V3
Evaluation circuit
U3
OPEN
V2
OPEN
OPEN
0Vdc
R1
100MEG
V1 V3
2.5Vdc 30Vdc
0
0
Simulation Result
ID=3, VGS=2.5V Measurement Simulation Error (%)
R DS (on) 27.00 m 27.00 m 0.00
All Rights Reserved Copyright (c) Bee Technologies Inc. 2005

8. Gate Charge Characteristic
Circuit Simulation result
20V
16V
12V
8V
4V
0V
0 8n 16n 24n 32n 40n
V(W1:3)
Time*10ms
Evaluation circuit
U2 V2
OPEN
OPEN
0Vdc
OPEN
Dbreak
R1
PER = 1000u D1
100MEG PW = 600u I2
TF = 10n W1
TR = 10n + 6Adc
TD = 0
0 I2 = 10m
-
I1 W
I1 = 0 IOFF = 1mA V1
ION = 0uA 24Vdc
0
Simulation Result
VDD=50V
Measurement Simulation Error (%)
,ID=30A
Qgs 3.50 nC 3.41 nC -2.67
Qgd 5.50 nC 5.49 nC -0.10
All Rights Reserved Copyright (c) Bee Technologies Inc. 2005

9. Capacitance Characteristic
Measurement
Simulation
Simulation Result
Cbd(pF)
VDS(V) Error(%)
Measurement Simulation
0.10 100.00 100.00 0.00
0.20 90.00 91.00 1.11
0.50 74.00 74.00 0.00
1.00 56.00 57.00 1.79
2.00 41.00 42.00 2.44
5.00 25.00 25.50 2.00
10.00 17.00 17.00 0.00
20.00 11.00 11.30 2.73
All Rights Reserved Copyright (c) Bee Technologies Inc. 2005

10. Switching Time Characteristic
Circuit Simulation result
6.0V
VDS = 15V
VGS = 5V
4.0V
2.0V
0V
5.00us 5.02us 5.04us 5.05us
V(2) V(3)/3
Time
Evaluation circuit
L1 RL
3
V3 0.03uH 5
OPEN
0Vdc
Rop
U3 VDD
100MEG 15
OPEN
R1 OPEN
L2
0 2
0.03uH 0
V1 = 0 4.7
V1
V2 = 10 R2
TD = 5u
TR = 6n 4.7
TF = 7n
PW = 5u
PER = 100u 0
0 0
Simulation Result
ID=3A, VDD=15V
Measurement Simulation Error(%)
VGS=0/5V
td (on) 13.00 ns 13.00 ns -0.02
All Rights Reserved Copyright (c) Bee Technologies Inc. 2005

11. Output Characteristic
Circuit Simulation result
10A
1.7V
8A
6A
1.6V
1.5V
4A
VGS=1.4V
2A
0A
0V 1.0V 2.0V 3.0V 4.0V 5.0V
I(V2)
V_V3
Evaluation circuit
U3
OPEN
V2
OPEN
OPEN
0Vdc
R1
100MEG
V1 V3
2.5Vdc 30Vdc
0
0
All Rights Reserved Copyright (c) Bee Technologies Inc. 2005

12. Output Characteristic Reference
1.7V
1.6V
1.5V
VGS=1.4V
All Rights Reserved Copyright (c) Bee Technologies Inc. 2005

13. Forward Current Characteristic of Reverse Diode
Circuit Simulation Result
Evaluation Circuit
R2
0.01m
TPC6005
OPEN
V1
OPEN
0Vdc
R1
100MEG U5
0
0
All Rights Reserved Copyright (c) Bee Technologies Inc. 2005

14. Comparison Graph
Circuit Simulation Result
Simulation Result
Vfwd(V) Vfwd(V)
Ifwd(A) %Error
Measurement Simulation
0.01 0.38 0.38 -1.30
0.02 0.39 0.40 0.51
0.05 0.42 0.42 0.00
0.10 0.44 0.44 0.45
0.20 0.47 0.47 -0.21
0.50 0.51 0.51 -0.20
1.00 0.54 0.54 0.19
2.00 0.58 0.58 -0.52
4.00 0.62 0.62 0.00
All Rights Reserved Copyright (c) Bee Technologies Inc. 2005

15. Forward Current Characteristic Reference
All Rights Reserved Copyright (c) Bee Technologies Inc. 2005

16. Reverse Recovery Characteristic
Circuit Simulation Result
400mA
0A
-400mA
14.96us 15.00us 15.04us 15.08us 15.12us
I(R1)
Time
Evaluation circuit
R2
50
OPEN U5
R1
OPEN
V1 = -9.4 V2
100MEG V2 = 10.6
TD = 0
TR = 10n TPC6005
TF = 10n
0 PW = 20u
PER = 50u
0
Compare Measurement vs. Simulation
Trr Measurement Simulation Error(%)
Trj+Trb 32 ns 32.636 ns 1.948768
All Rights Reserved Copyright (c) Bee Technologies Inc. 2005

17. Reverse Recovery Characteristic Reference
Measurement
trj=10.2(ns)
trb=21.8(ns)
Conditions:Ifwd=Irev=0.2(A),Rl=50
Example
Relation between trj and trb
All Rights Reserved Copyright (c) Bee Technologies Inc. 2005

18. ESD PROTECTION DIODE SPICE MODEL
Zener Voltage Characteristic
Circuit Simulation Result
Evaluation Circuit
U2
OPEN OPEN
OPEN
OPEN OPEN
R2
R1
0.01m
100MEG TPC6005
V1
0Vdc
0
0
All Rights Reserved Copyright (c) Bee Technologies Inc. 2005

19. Zener Voltage Characteristic Reference
All Rights Reserved Copyright (c) Bee Technologies Inc. 2005