SPICE MODEL of SSM3J15FU (Professional+BDP Model) in SPICE PARK. English Version is http://www.spicepark.net. Japanese Version is http://www.spicepark.com by Bee Technologies.

1. All Rights Reserved Copyright (c) Bee Technologies Inc. 2009
1
Device Modeling Report
Bee Technologies Inc.
COMPONENTS: Power MOSFET (Professional Model)
PART NUMBER: SSM3J15FU
MANUFACTURER: TOSHIBA
Body Diode (Professional Model) / ESD Protection Diode

2. All Rights Reserved Copyright (c) Bee Technologies Inc. 2009
2
MOSFET MODEL
PSpice model
parameter
Model description
LEVEL
L Channel Length
W Channel Width
KP Transconductance
RS Source Ohmic Resistance
RD Ohmic Drain Resistance
VTO Zero-bias Threshold Voltage
RDS Drain-Source Shunt Resistance
TOX Gate Oxide Thickness
CGSO Zero-bias Gate-Source Capacitance
CGDO Zero-bias Gate-Drain Capacitance
CBD Zero-bias Bulk-Drain Junction Capacitance
MJ Bulk Junction Grading Coefficient
PB Bulk Junction Potential
FC Bulk Junction Forward-bias Capacitance Coefficient
RG Gate Ohmic Resistance
IS Bulk Junction Saturation Current
N Bulk Junction Emission Coefficient
RB Bulk Series Resistance
PHI Surface Inversion Potential
GAMMA Body-effect Parameter
DELTA Width effect on Threshold Voltage
ETA Static Feedback on Threshold Voltage
THETA Mobility Modulation
KAPPA Saturation Field Factor
VMAX Maximum Drift Velocity of Carriers
XJ Metallurgical Junction Depth
UO Surface Mobility

3. All Rights Reserved Copyright (c) Bee Technologies Inc. 2009
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0
50
100
150
200
0 50 100 150 200
Transconductancegfs(mS)
Drain current -ID (mA)
Measurement
Simulation
Transconductance Characteristics
Circuit Simulation Result
Comparison table
-Id(A)
gfs (S)
%Error
Measurement Simulation
1 11.300 11.829 4.68
2 16.000 16.729 4.56
5 25.500 26.450 3.73
10 36.500 37.402 2.47
20 52.000 52.887 1.71
50 85.000 83.597 -1.65
100 116.000 118.184 1.88
200 169.000 167.051 -1.15

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V2
-3
0
V3
0Vdc
U1
SSM3J15FU
V1
0Vdc
V_V1
-1.00V -2.00V -3.00V -4.00V -5.00V-0.03V
I(V3)
-1.0mA
-1.0A
Vgs-Id Characteristic
Circuit Simulation result
Evaluation circuit

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1
10
100
1000
0 1 2 3 4 5
DrainCurrent-ID(mA)
Gate−source voltage -VGS (V)
Measurement
Simulation
Comparison Graph
Circuit Simulation Result
Simulation Result
-ID (mA)
-VGS (V)
Error (%)
Measurement Simulation
1 1.640 1.623 -1.05
2 1.730 1.693 -2.15
5 1.880 1.832 -2.56
10 2.040 1.988 -2.53
20 2.240 2.210 -1.34
50 2.600 2.650 1.91
100 3.080 3.145 2.12
200 3.880 3.846 -0.87

6. All Rights Reserved Copyright (c) Bee Technologies Inc. 2009
6
0
V3
0Vdc
VDS
0Vdc
V1
-4
U1
SSM3J15FU
V_VDS
0V -20mV -40mV -60mV -80mV -100mV
I(V3)
0A
-2mA
-4mA
-6mA
-8mA
-10mA
Rds(on) Characteristic
Circuit Simulation result
Evaluation circuit
Simulation Result
ID=-10mA,
VGS=-4V
Unit Measurement Simulation %Error
RDS (on)  8.000 8.001 0.02

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VDD
-24
I1TD = 0
TF = 1n
PW = 600u
PER = 1000u
I1 = 0
I2 = 1m
TR = 0.5n -
+
W1
ION = 0uA
IOFF = 1mA
W
I2
100m
0
D2
Dbreak
U1
SSM3J15FU
Time*1mA
0 0.4n 0.8n 1.2n 1.6n 2.0n
1 V(W1:4) 2 V(U1:D)
0V
-3V
-6V
-9V
-12V
-15V
-18V
-21V
1
0V
-4V
-8V
-12V
-16V
-20V
-24V
-28V
2
>>
Gate Charge Characteristic
Circuit Simulation result
Evaluation circuit
Simulation Result
VDD=-24V, ID=-100mA
, VGS=-10V
Unit Measurement Simulation %Error
Qgs nC 0.120 0.116 -3.03
Qgd nC 0.180 0.176 -2.02
Qg nC 0.880 0.883 0.34

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Gate Charge Characteristic Reference
VDD=-24V,
ID=-100mA

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Capacitance Characteristic
Simulation Result
-VDS(V)
Cbd(pF)
%Error
Measurement Simulation
0.1 10.000 9.962 -0.38
0.2 9.400 9.461 0.65
0.5 8.400 8.383 -0.20
1.0 7.300 7.290 -0.14
2.0 6.100 6.100 0.00
5.0 4.600 4.621 0.46
10.0 3.700 3.674 -0.70
20.0 2.900 2.897 -0.10
30.0 2.500 2.515 0.60
Simulation
Measurement

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Time
1.00us 1.10us0.92us
V(U1:G) V(U1:D)
1.0V
0V
-1.0V
-2.0V
-3.0V
-4.0V
-5.0V
-6.0V
-7.0V
Switching Time Characteristics
Circuit Simulation result
Evaluation circuit
Simulation Result
ID= -100mA, VDD= -5V
VGS=0/-10V
Unit Measurement Simulation %Error
ton ns 65.000 65.272 0.42
0
VDD
-5Vdc
V2
TD = 1u
TF = 4n
PW = 10u
PER = 1m
V1 = 0
TR = 4n
V2 = 10
L2
50nH
R2
50
R1 50
U1
SSM3J15FU
L1
30nH
RL
500

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11
V2
-10V1
0
0
V3
0Vdc
U1
SSM3J15FU
V_V2
0V -0.5V -1.0V -1.5V -2.0V
I(V3)
0A
-50mA
-100mA
-150mA
-200mA
-250mA
Output Characteristic
Circuit Simulation result
Evaluation circuit
-2.5
-3.0
-4
-10
VGS=-2.3V
-7 -5
-3.3
-2.7

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VSD
0
Vsense
0Vdc
U1
SSM3J15FU
V_VSD
0V 0.2V 0.4V 0.6V 0.8V 1.0V 1.2V 1.4V
I(Vsense)
0A
50mA
100mA
150mA
200mA
BODY DIODE SPICE MODEL
Forward Current Characteristic
Circuit Simulation Result
Evaluation Circuit

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13
0
50
100
150
200
250
0 0.2 0.4 0.6 0.8 1 1.2 1.4
Drainreversecurrent-IDR(mA)
Drain−source voltage VDS (V)
Measurement
Simulation
Comparison Graph
Circuit Simulation Result
Simulation Result
IDR (mA)
VDS (V)
%Error
Measurement Simulation
5 0.700 0.698 -0.23
10 0.720 0.720 0.04
20 0.740 0.744 0.47
50 0.780 0.779 -0.15
100 0.815 0.813 -0.24
200 0.860 0.861 0.11

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Time
9.88us 9.96us 10.04us 10.12us 10.20us
I(R1)
-400mA
-300mA
-200mA
-100mA
-0mA
100mA
200mA
300mA
400mA
Reverse Recovery Characteristics
Circuit Simulation Result
Evaluation Circuit
Compare Measurement vs. Simulation
Parameter Unit Measurement Simulation %Error
trj ns 10.400 10.552 1.46
trb ns 19.200 19.221 0.11
trr ns 29.600 29.773 0.58
V1
TD = 32ns
TF = 20ns
PW = 10us
PER = 100us
V1 = -9.4V
TR = 10ns
V2 = 10.8v
R1
50
0
U1
DSSM3J15FU_P

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Reverse Recovery Characteristic Reference
Trj= 10.40(ns)
Trb= 19.20(ns)
Conditions: Ifwd=lrev=0.2(A),Rl=50
Relation between trj and trb
Example
Measurement

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R1
0.001m
V1
0Vdc
0
U1
SSM3J15FU
R2
100MEG
V_V1
0V -10V -20V -30V -40V -50V -60V -70V -80V -90V
I(R1)
0A
-2mA
-4mA
-6mA
-8mA
-10mA
ESD PROTECTION DIODE SPICE MODEL
Zener Voltage Characteristics
Circuit Simulation Result
Evaluation Circuit

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Zener Voltage Characteristic Reference