SPICE MODEL of TPC8025 (Professional+BDP Model) in SPICE PARK. English Version is http://www.spicepark.net. Japanese Version is http://www.spicepark.com by Bee Technologies.

1. Device Modeling Report
COMPONENTS: Power MOSFET (Professional)
PART NUMBER: TPC8025
MANUFACTURER: TOSHIBA
Body Diode (Professional)
Bee Technologies Inc.
All Rights Reserved Copyright (c) Bee Technologies Inc. 2007

2. Circuit Configuration
U1
TPC8025
Equivalent Circuit
D
S1
- -
+ +
R2
S
R1 10MEG DGD
10M CGD
S2
+ +
- -
Q1
S
G
S
All Rights Reserved Copyright (c) Bee Technologies Inc. 2007

3. MOSFET MODEL
PSpice model
Model description
parameter
LEVEL
L Channel Length
W Channel Width
KP Transconductance
RS Source Ohmic Resistance
RD Ohmic Drain Resistance
VTO Zero-bias Threshold Voltage
RDS Drain-Source Shunt Resistance
TOX Gate Oxide Thickness
CGSO Zero-bias Gate-Source Capacitance
CGDO Zero-bias Gate-Drain Capacitance
CBD Zero-bias Bulk-Drain Junction Capacitance
MJ Bulk Junction Grading Coefficient
PB Bulk Junction Potential
FC Bulk Junction Forward-bias Capacitance Coefficient
RG Gate Ohmic Resistance
IS Bulk Junction Saturation Current
N Bulk Junction Emission Coefficient
RB Bulk Series Resistance
PHI Surface Inversion Potential
GAMMA Body-effect Parameter
DELTA Width effect on Threshold Voltage
ETA Static Feedback on Threshold Voltage
THETA Mobility Modulation
KAPPA Saturation Field Factor
VMAX Maximum Drift Velocity of Carriers
XJ Metallurgical Junction Depth
UO Surface Mobility
All Rights Reserved Copyright (c) Bee Technologies Inc. 2007

4. Transconductance Characteristic
Circuit Simulation Result
Comparison table
gfs
Id(A) Error (%)
Measurement Simulation
0.5 7.143 7.143 0
1 9.615 10.000 4.004
2 13.793 14.085 2.117
5 22.222 22.026 -0.882
10 31.546 30.960 -1.858
20 44.053 43.103 -2.156
All Rights Reserved Copyright (c) Bee Technologies Inc. 2007

5. Vgs-Id Characteristic
Circuit Simulation result
20A
15A
10A
5A
0A
0V 1.0V 2.0V 3.0V 4.0V 5.0V 6.0V
I(V3)
V_V1
Evaluation circuit
V3
0Vdc
U1
V2
TPC8025
V1 10
5.8
0
All Rights Reserved Copyright (c) Bee Technologies Inc. 2007

6. Comparison Graph
Circuit Simulation Result
Simulation Result
VGS(V)
ID(A) Error (%)
Measurement Simulation
0.5 2.4 2.3626 -1.558
1 2.45 2.4225 -1.122
2 2.6 2.5075 -3.558
5 2.8 2.6773 -4.382
10 2.95 2.8706 -2.692
20 3.15 3.1471 -0.092
All Rights Reserved Copyright (c) Bee Technologies Inc. 2007

7. Rds(on) Characteristic
Circuit Simulation result
5.0A
4.0A
3.0A
2.0A
1.0A
0A
0V 20mV 40mV 60mV 80mV 100mV
I(V2)
V_V3
Evaluation circuit
V2
0Vdc
U1
V3
0Vdc
TPC8025
V1
10
0
Simulation Result
ID=5.5A, VGS=10V Measurement Simulation Error (%)
R DS (on) m 7.5 7.499 -0.013
All Rights Reserved Copyright (c) Bee Technologies Inc. 2007

8. Gate Charge Characteristic
Circuit Simulation result
14V
12V
10V
8V
6V
4V
2V
0V
0s 10ns 20ns 30ns 40ns
V(W1:3)
Time*1m
Evaluation circuit
RON = 1.0
ROFF = 1e6
ION = 0
IOFF = 100u
W1
+ I2
-
W D1 11
I1 = 0 Dbreak
I1 I2 = 1m
TD = 0 U1 V1
TR = 10n TPC8025
TF = 10n
PW = 200u
PER = 500u 24
0
Simulation Result
VDD=24V,ID=11A Measurement Simulation Error (%)
Qgs (nC) 3.8 3.806 0.158
Qgd (nC) 8 8.002 0.025
Qg (nC) 26 26.054 0.208
All Rights Reserved Copyright (c) Bee Technologies Inc. 2007

9. Capacitance Characteristic
Measurement
Simulation
Simulation Result
Cbd(pF)
VDS(V) Error(%)
Measurement Simulation
0.1 530 529.8 -0.038
0.2 490 489.5 -0.102
0.5 410 411 0.244
1 340 339.8 -0.059
2 270 269.9 -0.037
5 190 190.5 0.263
10 145 144 -0.690
All Rights Reserved Copyright (c) Bee Technologies Inc. 2007

10. Switching Time Characteristic
Circuit Simulation result
20V
10V
0V
1.75us 2.00us 2.25us 2.50us
V(U1:4) V(U1:5)/1.5
Time
Evaluation circuit
L1 R2
50nH
2.73
L2
V1
30nH
15
V1 = 0 V2 R4
V2 = 10
TD = 2u 4.7 U1
TR = 6n TPC8025
TF = 7n
PW = 10u
PER = 30u
0
Simulation Result
ID=5.5 A, VDD=15V
Measurement Simulation Error(%)
VGS=0/10V
Ton (ns) 23 23.085 0.370
All Rights Reserved Copyright (c) Bee Technologies Inc. 2007

11. Output Characteristic
Circuit Simulation result
20A
3.5 3.3
16A
3.2
12A
3.1
3.0
8A
2.9
4A 2.8
VGS=2.7 V
0A
0V 0.4V 0.8V 1.2V 1.6V 2.0V
I(Vdsense)
V_Vvariable
6.8
Evaluation circuit
Vdsense
0Vdc
U1
Vv ariable
Vstep TPC8025
2
4.5
0
All Rights Reserved Copyright (c) Bee Technologies Inc. 2007

12. Forward Current Characteristic
Circuit Simulation Result
100A
10A
1.0A
0V 0.2V 0.4V 0.6V 0.8V 1.0V 1.2V
I(R1)
V_V1
Evaluation Circuit
R1
0.01m
U1
V1 TPC8025
0Vdc
0
All Rights Reserved Copyright (c) Bee Technologies Inc. 2007

13. Comparison Graph
Circuit Simulation Result
Simulation Result
VDS(V)
IDR(A) %Error
Measurement Simulation
1 0.64 0.641 0.156
2 0.68 0.678 -0.294
5 0.735 0.737 0.272
10 0.795 0.794 -0.126
20 0.875 0.875 0
All Rights Reserved Copyright (c) Bee Technologies Inc. 2007

14. Reverse Recovery Characteristic
Circuit Simulation Result
400mA
200mA
0A
-200mA
-400mA
14.88us 14.96us 15.04us 15.12us 15.20us 15.28us
I(RL)
Time
Evaluation Circuit
RL
50
V1 = -9.45 V1
V2 = 10.58 U1
TD = 0
TR = 10n DTPC8025
TF = 10n
PW = 15u
PER = 100u
0
Simulation Result
Measurement Simulation Error (%)
Trj(ns) 16.0 16.003 0.019
Trb(ns) 44.8 45.082 0.629
Trr(ns) 60.8 61.085 0.469
All Rights Reserved Copyright (c) Bee Technologies Inc. 2007

15. Reverse Recovery Characteristic Reference
Trj=16(ns)
Trb=44.8(ns)
Conditions:Ifwd=lrev=0.2(A),Rl=50
Example
Relation between trj and trb
All Rights Reserved Copyright (c) Bee Technologies Inc. 2007