SPICE MODEL of TPC6007-H (Standard+BDS) in SPICE PARK. English Version is http://www.spicepark.net. Japanese Version is http://www.spicepark.com by Bee Technologies.
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SPICE MODEL of TPC6007-H (Standard+BDS Model) in SPICE PARK
1. Device Modeling Report
COMPONENTS: Power MOSFET (Model Parameters)
PART NUMBER: TPC6007-H
MANUFACTURER: TOSHIBA
Body Diode (Standard Model) / ESD Protection Diode
Bee Technologies Inc.
All Rights Reserved Copyright (c) Bee Technologies Inc. 2007
2. Circuit Configuration
6 5 4
1 2 3
All Rights Reserved Copyright (c) Bee Technologies Inc. 2007
3. MOSFET MODEL
Pspice model
Model description
parameter
LEVEL
L Channel Length
W Channel Width
KP Transconductance
RS Source Ohmic Resistance
RD Ohmic Drain Resistance
VTO Zero-bias Threshold Voltage
RDS Drain-Source Shunt Resistance
TOX Gate Oxide Thickness
CGSO Zero-bias Gate-Source Capacitance
CGDO Zero-bias Gate-Drain Capacitance
CBD Zero-bias Bulk-Drain Junction Capacitance
MJ Bulk Junction Grading Coefficient
PB Bulk Junction Potential
FC Bulk Junction Forward-bias Capacitance Coefficient
RG Gate Ohmic Resistance
IS Bulk Junction Saturation Current
N Bulk Junction Emission Coefficient
RB Bulk Series Resistance
PHI Surface Inversion Potential
GAMMA Body-effect Parameter
DELTA Width effect on Threshold Voltage
ETA Static Feedback on Threshold Voltage
THETA Modility Modulation
KAPPA Saturation Field Factor
VMAX Maximum Drift Velocity of Carriers
XJ Metallurgical Junction Depth
UO Surface Mobility
All Rights Reserved Copyright (c) Bee Technologies Inc. 2007
10. Switching Time Characteristic
Circuit Simulation result
18V
16V
14V
12V
10V
8V
6V
4V
2V
0V
-2V
-4V
0.97us 0.98us 1.00us 1.02us 1.04us 1.06us
V(L3:1)*1 V(L2:2)/1.5
Time
Evaluation circuit
U1 TPC6007-H
R2 L3 Vsense RL
V1 = 0 2 3
V2 = 20 6.0
4.7
open
TD = 1u
TR = 10n V1 R1 open
open
VDD
TF = 10n 4.7 15Vdc
PW = 10u
PER = 10m
0
Simulation Result
ID=2.4A, VDD=20V
Measurement Simulation Error(%)
VGS=0/10V
td (on) ns 8.30 8.299 -0.01
All Rights Reserved Copyright (c) Bee Technologies Inc. 2007
11. Output Characteristic
Circuit Simulation result
10A
10 3.8V 3.6V
8 6 4.0V
8A
3.4V
6A
3.2V
4A
3.0V
2.8V
2A
VGS=2.5V
0A
0V 1V 2V 3V 4V 5V 6V 7V 8V 9V 10V
I(Vsense)
V_VDS
Evaluation circuit
U1 TPC6007-H
Vsense
open open
open
open
R1
VDS
VGS 0Vdc 10Vdc 100MEG
0
0
All Rights Reserved Copyright (c) Bee Technologies Inc. 2007
12. BODY DIODE
Forward Current Characteristic
Circuit Simulation Result
100A
10A
1.0A
100mA
0V 0.2V 0.4V 0.6V 0.8V 1.0V 1.2V
I(R1)
V_V1
Evaluation Circuit
R1
0.01m
U1 open
V1 R2
open open
0Vdc
100MEG
open
TPC6007-H
0
0
All Rights Reserved Copyright (c) Bee Technologies Inc. 2007
14. Reverse Recovery Characteristic
Circuit Simulation Result
400mA
300mA
200mA
100mA
-0mA
-100mA
-200mA
-300mA
-400mA
0.94us 0.98us 1.02us 1.06us 1.10us 1.14us
I(R1)
Time
Evaluation Circuit
R1 50
V1 = -9.3V U1 TPC6007-H
V2 = 10.8V open
TD = 0
TR = 10ns V1 R2
open open
TF = 5.7ns 100MEG
open
PW = 1us
PER = 50us
0
0
Compare Measurement vs. Simulation
Measurement Simulation Error (%)
trj ns 14.000 14.070 0.500
All Rights Reserved Copyright (c) Bee Technologies Inc. 2007
15. Reverse Recovery Characteristic Reference
Measurement
Trj=14.00(ns)
Trb=12.00(ns)
Conditions:Ifwd=lrev=0.2(A),Rl=50
Example
Relation between trj and trb
All Rights Reserved Copyright (c) Bee Technologies Inc. 2007
16. ESD PROTECTION DIODE
Zener Voltage Characteristic
Circuit Simulation Result
10mA
9mA
8mA
7mA
6mA
5mA
4mA
3mA
2mA
1mA
0A
0V 10V 20V 30V 40V 50V 60V 70V 80V 90V
I(R1)
V_V1
Evaluation Circuit
R1
open open
0.01m open
U3
V1
0Vdc TPC6007-H Ropen
100MEG
0
open open
0
All Rights Reserved Copyright (c) Bee Technologies Inc. 2007