SPICE MODEL of SSM3K35FS (Professional+BDP Model) in SPICE PARK

Device Modeling Report

COMPONENTS: MOSFET (Professional)
PART NUMBER: SSM3K35FS
MANUFACTURER: TOSHIBA
Body Diode (Professional) / ESD Protection Diode

Bee Technologies Inc.

All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
1

Equivalent Circuit

D

S
- -
+ +
R3
S2 10MEG DGD

R1 CGD
10M S1
+ +
- -

S M1
G

S

2

MOSFET MODEL

PSpice model
Model description
parameter
LEVEL
L Channel Length
W Channel Width
KP Transconductance
RS Source Ohmic Resistance
RD Ohmic Drain Resistance
VTO Zero-bias Threshold Voltage
RDS Drain-Source Shunt Resistance
TOX Gate Oxide Thickness
CGSO Zero-bias Gate-Source Capacitance
CGDO Zero-bias Gate-Drain Capacitance
CBD Zero-bias Bulk-Drain Junction Capacitance
MJ Bulk Junction Grading Coefficient
PB Bulk Junction Potential
FC Bulk Junction Forward-bias Capacitance Coefficient
RG Gate Ohmic Resistance
IS Bulk Junction Saturation Current
N Bulk Junction Emission Coefficient
RB Bulk Series Resistance
PHI Surface Inversion Potential
GAMMA Body-effect Parameter
DELTA Width effect on Threshold Voltage
ETA Static Feedback on Threshold Voltage
THETA Modility Modulation
KAPPA Saturation Field Factor
VMAX Maximum Drift Velocity of Carriers
XJ Metallurgical Junction Depth
UO Surface Mobility

3

Transconductance Characteristic

Circuit Simulation Result

0.35
Measurement
Simulation
0.3

0.25

0.2
gfs(s)

0.15

0.1

0.05

0
0 20 40 60 80 100 120

Drain current ID (mA)

Comparison table

gfs
Id(mA) Error(%)
Measurement Simulation
10 0.096 0.095 1.04
20 0.136 0.135 0.74
50 0.210 0.213 -1.43
100 0.305 0.301 1.31

4

Vgs-Id Characteristic

Circuit Simulation result

200mA

180mA

160mA

140mA

120mA

100mA

80mA

60mA

40mA

20mA

0A
0V 1.0V 2.0V 3.0V
I(V3)
V_Vvar

Evaluation circuit

V3

0Vdc

U1

SSM3K35FS

Vv ar VDS
3Vdc

0

5

Comparison Graph


250
Measurement
Simulation

200
Drain current ID (mA)

150

100

50

0
0 0.4 0.8 1.2 1.6 2

Gate-source voltage VGS (V)

Simulation Result

VGS(V)
ID(mA) Error (%)
1.000 0.760 0.783 -3.03
2.000 0.800 0.819 -2.37
5.000 0.870 0.874 -0.46
10.000 0.950 0.935 1.58
20.000 1.030 1.022 0.78
50.000 1.200 1.194 0.48
100.000 1.370 1.389 -1.35
200.000 1.680 1.664 0.95

6

Rds(on) Characteristic

50mA

40mA

30mA

20mA

10mA

0A
0V 25mV 50mV 75mV
I(V3)
V_Vvar

Evaluation circuit
V3

0Vdc

U1

SSM3K35FS Vv ar

4Vdc 0Vdc

VGS

0

Simulation Result

ID=50mA, VGS=4V Measurement Simulation Error (%)
R DS (on) () 1.5 1.5 0

7

Gate Charge Characteristic
12V 20V
1 2

10V

15V

8V

6V 10V

4V

5V

2V

>>
0V 0V
0 0.2n 0.4n 0.6n 0.8n 1.0n 1.2n 1.4n 1.6n 1.8n 2.0n
1 V(W1:3) 2 V(V2:-)
Time*1mS

Evaluation circuit
V2

0Vdc

U1

SSM3K35FS
PER = 100u Dbreak
PW = 60u W1
TF = 10n + D1
TR = 10n I2
-
TD = 0 0.18Adc
I2 = 1m W
I1 = 0 I1 IOFF = 0.1mA
ION = 0uA

V1
16Vdc

0

Simulation Result

VDD=16V,ID=180mA
Measurement Simulation Error (%)
,VGS=5V
Qgs(nc) 0.140 0.145 3.57
Qgd(nc) 0.190 0.185 -2.58
Qg(nc) 0.750 0.744 -0.80

8

Gate Charge Characteristic Reference

12
ID=180mA,
VDD=16V
Gate-source voltage VGS (V)
10

8

6

4

2

0
0 0.4 0.8 1.2 1.6 2

Total gate charge Qg (nC)

9

Capacitance Characteristic

Measurement
Simulation

Simulation Result

Cbd(pF)
VDS(V) Error(%)
0.5 8.200 8.2 8.16
1 7.100 7.1 7.13
2 6.050 6.05 6.06
5 4.650 4.75 4.752
10 3.900 3.9 3.905
20 3.300 3.2 3.191

10

Switching Time Characteristic


4.0V

3.0V

2.0V

1.0V

0V

-1.0V

-2.0V

-3.0V

-4.0V
0.88us 0.92us 0.96us 1.00us 1.04us 1.08us 1.12us 1.16us 1.20us 1.24us
V(2) V(3)
Time

Evaluation circuit
L2
3
30n

U1 RL

R1 50 60
SSM3K35FS
2

L1 30nH VDD
V1 = 0 3Vdc
V2 = 5 V2
TD = 1u R2
TR = 50n 50
TF = 50n
PW = 2u
PER = 10u

0

Simulation Result

ID=50mA, VDD=16V
Measurement Simulation Error(%)
VGS=2.5V
Ton(ns) 115 112.799 -1.91

11

Output Characteristic


400mA

10 V 4V 2.5V

300mA

1.8V

200mA

1.5V

100mA

VGS=1.2V

0A
0V 0.5V 1.0V 1.5V 2.0V
I(Vdsense)
V_Vvariable

Evaluation circuit

Vdsense

0Vdc

U1

SSM3K35FS
Vv ariable
10Vdc

0Vdc

Vstep

0

12

Forward Current Characteristic

1.0A

100mA

10mA

1.0mA

100uA

10uA
0V 0.5V 1.0V 1.5V
I(R1)
V_V1

Evaluation Circuit

R1

0.01m

V1 SSM3K35FS
0Vdc
U1

0

13

Comparison Graph


Simulation Result

VSD(V)
IDR(mA) %Error
1.000 0.640 0.646 -0.94
2.000 0.667 0.667 0.00
5.000 0.695 0.696 -0.14
10.000 0.720 0.719 0.14
20.000 0.745 0.745 0.00
50.000 0.790 0.788 0.25
100.000 0.840 0.835 0.60
200.000 0.912 0.908 0.44

14

Reverse Recovery Characteristic

400mA

300mA

200mA

100mA

-0mA

-100mA

-200mA

-300mA

-400mA
1.92us 1.96us 2.00us 2.04us 2.08us 2.12us
I(R1)
Time
Evaluation Circuit

R1

50

V1 = -9.23V V1 U1
V2 = 10.82V D3K35FS_PRO
TD = 5ns
TR = 5ns
TF = 10ns
PW = 2us
PER = 100us

0

Compare Measurement vs. Simulation

Measurement Simulation Error (%)
trj(ns) 11.500 11.427 -0.63
trb(ns) 17.500 17.401 -0.57
trr(ns) 29.000 28.828 -0.59

15

Reverse Recovery Characteristic Reference

Trj=11.5(ns)
Trb=17.5(ns)
Conditions:Ifwd=lrev=0.2(A),Rl=50

Example

Relation between trj and trb

16

Zener Voltage Characteristic

10mA

9mA

8mA

7mA

6mA

5mA

4mA

3mA

2mA

1mA

0A
0V 5V 10V 15V 20V 25V 30V 35V 40V 45V 50V
I(R1)
V_V1

Evaluation Circuit

R1

U1
0.01m

V1
0Vdc

R2 SSM3K35FS

100MEG

0

17

Zener Voltage Characteristic Reference

18

SPICE MODEL of SSM3K35FS (Professional+BDP Model) in SPICE PARK

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