SPICE MODEL of SDT10S60 (Professional Model) in SPICE PARK. English Version is http://www.spicepark.net. Japanese Version is http://www.spicepark.com by Bee Technologies.

1. Device Modeling Report
COMPONENTS: Silicon Carbide Schottky Diode
PART NUMBER: Infineon
MANUFACTURER: SDT10S60
REMARK: Professional Model
Bee Technologies Inc.
All Rights Reserved Copyright (C) Bee Technologies Inc. 2011
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2. Circuit Configuration
U1
SDT10S60
All Rights Reserved Copyright (C) Bee Technologies Inc. 2011
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3. DIODE MODEL PARAMETERS
PSpice
model Model description
parameter
IS Saturation Current
N Emission Coefficient
RS Series Resistance
IKF High-injection Knee Current
CJO Zero-bias Junction Capacitance
M Junction Grading Coefficient
VJ Junction Potential
ISR Recombination Current Saturation Value
BV Reverse Breakdown Voltage(a positive value)
IBV Reverse Breakdown Current(a positive value)
TT Transit Time
EG Energy-band Gap
All Rights Reserved Copyright (C) Bee Technologies Inc. 2011
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4. Forward Current Characteristics
Circuit Simulation result
20A
18A
16A
14A
12A
10A
8A
6A
4A
2A
0A
0V 0.5V 1.0V 1.5V 2.0V 2.5V
I(R1)
V_V1
Evaluation circuit
R1
0.01m
V1 U1
SDT10S60
0
All Rights Reserved Copyright (C) Bee Technologies Inc. 2011
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5. Comparison Graph
Circuit Simulation result
20
Measurement
Simulation
16
Forword Current, IF (A)
12
8
4
0
0 0.5 1 1.5 2 2.5
Forward Voltage, VF (V)
Comparison table
VF (V)
IF (A) %Error
Measurement Simulation
0.5 0.950 0.956 0.63
1 1.000 1.000 0.00
2 1.070 1.070 0.00
5 1.250 1.241 -0.72
10 1.502 1.510 0.53
20 2.030 2.028 -0.10
All Rights Reserved Copyright (C) Bee Technologies Inc. 2011
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6. Reverse Current Characteristic
Circuit Simulation result
100uA
10uA
1.0uA
100nA
10nA
1.0nA
100V 200V 300V 400V 500V 600V
I(U1:K)
V_V1
Evaluation circuit
V2
0
V1 U1
SDT10S60
0
All Rights Reserved Copyright (C) Bee Technologies Inc. 2011
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7. Comparison Graph
Circuit Simulation result
Comparison table
IR (A)
VR (V) %Error
Measurement Simulation
100 2.100E-09 2.141E-09 1.95
200 1.500E-08 1.435E-08 -4.33
500 5.000E-06 4.767E-06 -4.66
All Rights Reserved Copyright (C) Bee Technologies Inc. 2011
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8. Junction Capacitance Characteristic
Circuit Simulation result
400p
360p
320p
280p
240p
200p
160p
120p
80p
40p
0
1.0V 10V 100V 1.0KV
I(V2)/(600V/1u)
V(R)
Evaluation circuit
V2
R
0
V1 = 0 V1
V2 = 600 U1
TD = 0 SDT10S60
TR = 1us
TF = 100ns
PW = 100us
PER = 10m
0
All Rights Reserved Copyright (C) Bee Technologies Inc. 2011
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9. Comparison Graph
Circuit Simulation result
400
Measurement
360
Simulation
320
Capacitance, C (pF)
280
240
200
160
120
80
40
0
1 10 100 1000
Reverse Voltage, VR (V)
Comparison table
C (pF)
VR (V) %Error
Measurement Simulation
1 358.00 358.90 0.25
2 292.00 291.75 -0.08
5 207.00 206.62 -0.19
10 153.00 153.25 0.16
20 111.00 111.99 0.89
50 72.00 72.64 0.89
100 52.00 52.20 0.38
200 38.00 37.41 -1.55
500 25.00 24.01 -3.97
All Rights Reserved Copyright (C) Bee Technologies Inc. 2011
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