SPICE MODEL of TPCM8002-H (Standard+BDS) in SPICE PARK. English Version is http://www.spicepark.net. Japanese Version is http://www.spicepark.com by Bee Technologies.

1. Device Modeling Report
COMPONENTS: Power MOSFET (Model Parameter)
PART NUMBER: TPCM8002-H
MANUFACTURER: TOSHIBA
Body Diode (Model Parameter)
Bee Technologies Inc.
All Rights Reserved Copyright (c) Bee Technologies Inc. 2008

2. Circuit Configuration
MOSFET MODEL
Pspice model
Model description
parameter
LEVEL
L Channel Length
W Channel Width
KP Transconductance
RS Source Ohmic Resistance
RD Ohmic Drain Resistance
VTO Zero-bias Threshold Voltage
RDS Drain-Source Shunt Resistance
TOX Gate Oxide Thickness
CGSO Zero-bias Gate-Source Capacitance
CGDO Zero-bias Gate-Drain Capacitance
CBD Zero-bias Bulk-Drain Junction Capacitance
MJ Bulk Junction Grading Coefficient
PB Bulk Junction Potential
FC Bulk Junction Forward-bias Capacitance Coefficient
RG Gate Ohmic Resistance
IS Bulk Junction Saturation Current
N Bulk Junction Emission Coefficient
RB Bulk Series Resistance
PHI Surface Inversion Potential
GAMMA Body-effect Parameter
DELTA Width effect on Threshold Voltage
ETA Static Feedback on Threshold Voltage
THETA Modility Modulation
KAPPA Saturation Field Factor
VMAX Maximum Drift Velocity of Carriers
XJ Metallurgical Junction Depth
UO Surface Mobility
All Rights Reserved Copyright (c) Bee Technologies Inc. 2008

3. Transconductance Characteristic
Circuit Simulation Result
100
Measurement
90 Simulation
80
70
60
gfs
50
40
30
20
10
0
0 4 8 12 16 20
ID : Drain Current A
Comparison table
gfs
Id(A) Error(%)
Measurement Simulation
0.100 1.100 1.111 1.000
0.200 3.200 3.333 4.156
0.500 8.000 8.333 4.163
1.000 12.000 12.500 4.167
2.000 19.366 20.222 4.420
5.000 32.667 33.250 1.785
10.000 46.000 47.619 3.520
20.000 67.333 68.966 2.425
All Rights Reserved Copyright (c) Bee Technologies Inc. 2008

4. Vgs-Id Characteristic
Circuit Simulation result
20A
16A
12A
8A
4A
0A
0V 1.0V 2.0V 3.0V 4.0V 5.0V
I(V3)
V_V2
Evaluation circuit
V3
0Vdc
U1
TPCM8002-H
Vv ariable
10Vdc 10Vdc
V2
0
All Rights Reserved Copyright (c) Bee Technologies Inc. 2008

5. Comparison Graph
Circuit Simulation Result
20.000
Measurement
Simulation
16.000
ID : Drain Current A
12.000
8.000
4.000
0.000
0.00 1.00 2.00 3.00 4.00 5.00
VGS : Gate to Source Voltage V
Simulation Result
VGS(V)
ID(A) Error (%)
Measurement Simulation
0.100 2.600 2.587 -0.500
0.200 2.620 2.607 -0.496
0.500 2.650 2.641 -0.340
1.000 2.700 2.678 -0.815
2.000 2.780 2.731 -1.763
5.000 2.950 2.836 -3.864
10.000 3.100 2.957 -4.613
20.000 3.200 3.131 -2.156
All Rights Reserved Copyright (c) Bee Technologies Inc. 2008

6. Rds(on) Characteristic
Circuit Simulation result
20A
16A
12A
8A
4A
0A
0V 10mV 20mV 30mV 40mV 50mV 60mV 70mV 80mV 90mV
I(V3)
V_VDS
Evaluation circuit
V3
0Vdc
U1
TPCM8002-H
VDS
10Vdc 0Vdc
VGS
0
Simulation Result
ID=15A, VGS=10V Measurement Simulation Error (%)
R DS (on) (m) 4.700 4.690 -0.213
All Rights Reserved Copyright (c) Bee Technologies Inc. 2008

7. Gate Charge Characteristic
Circuit Simulation result
20V
16V
12V
8V
4V
0V
0 10n 20n 30n 40n 50n
V(W1:3)
Time*1mS
Evaluation circuit
V2
0Vdc
U1
TPCM8002-H
Dbreak
PER = 1000u D1
PW = 600u W1 I2
TF = 10n + 30Adc
TR = 10n
-
TD = 0
I2 = 1m W
I1 = 0 I1 IOFF = 0.1mA
ION = 0uA V1
24Vdc
0
Simulation Result
VDD=24V,ID=30A
Measurement Simulation Error (%)
,VGS=10V
Qgs(nc) 7.500 7.517 0.227
Qgd(nc) 6.000 5.931 -1.150
Qg(nc) 32.500 28.759 -11.511
All Rights Reserved Copyright (c) Bee Technologies Inc. 2008

8. Capacitance Characteristic
Measurement
Simulation
Simulation Result
Cbd(nF)
VDS(V) Error(%)
Measurement Simulation
0.100 1.150 1.152 0.174
1.000 0.820 0.805 -1.829
10.000 0.330 0.325 -1.515
30.000 0.190 0.192 1.053
All Rights Reserved Copyright (c) Bee Technologies Inc. 2008

9. Switching Time Characteristic
Circuit Simulation result
20V
15V
10V
5V
0V
1.80us 1.90us 2.00us 2.10us 2.20us 2.30us
V(2) V(3)/1.5
Time
Evaluation circuit
3 L2
50nH
U1
TPCM8002-H
RL
1
R1 L1 2
V1 = 0 4.7 30nH VDD
V2 = 20 V2
TD = 2u R2
TR = 6n 15Vdc
TF = 7n 4.7
PW = 2u
PER = 10u
0
Simulation Result
ID=15A, VDD=15V
Measurement Simulation Error(%)
VGS=10V
Ton(ns) 13.000 13.096 0.738
All Rights Reserved Copyright (c) Bee Technologies Inc. 2008

10. Output Characteristic
Circuit Simulation result
50A
3.8
40A 3.7
3.6
30A
3.5
20A
3.3
10A
0A
VGS= 3.0V
0V 0.2V 0.4V 0.6V 0.8V 1.0V 1.2V 1.4V 1.6V 1.8V 2.0V
I(Vdsense)
V_Vvariable
Evaluation circuit
Vdsense
0Vdc
U1
TPCM8002-H
Vv ariable
2Vdc
Vstep
3Vdc
0
All Rights Reserved Copyright (c) Bee Technologies Inc. 2008

11. BODY DIODE SPICE MODEL
Forward Current Characteristic
Circuit Simulation Result
100A
10A
1.0A
0V 0.2V 0.4V 0.6V 0.8V 1.0V
I(R1)
V_V1
Evaluation Circuit
Vdsense
0Vdc
U1
TPCM8002-H
Vv ariable
2Vdc
Vstep
3Vdc
0
All Rights Reserved Copyright (c) Bee Technologies Inc. 2008

12. Comparison Graph
Circuit Simulation Result
100.00
Measurement
Simulation
Drain reverse current IDR(A)
10.00
1.00
0 0.2 0.4 0.6 0.8 1
Source-Drain voltage VSD(V)
Simulation Result
VSD(V) VSD(V)
IDR(A) %Error
Measurement Simulation
1.000 0.680 0.679 -0.147
2.000 0.700 0.698 -0.286
5.000 0.725 0.728 0.414
10.000 0.755 0.758 0.397
20.000 0.800 0.797 -0.375
50.000 0.870 0.872 0.230
All Rights Reserved Copyright (c) Bee Technologies Inc. 2008

13. Reverse Recovery Characteristic
Circuit Simulation Result
400mA
200mA
0A
-200mA
-400mA
19.92us 20.00us 20.08us 20.16us 20.24us 20.32us
I(R1)
Time
Evaluation Circuit
R1
50
V1 = -9.4v V1
V2 = 10.7v U1
TD = 30n TPCM8002-H
TR = 10ns
TF = 10ns
PW = 20us
PER = 100us
0
Compare Measurement vs. Simulation
Measurement Simulation Error (%)
Trj(ns) 20.800 20.604 -0.942
All Rights Reserved Copyright (c) Bee Technologies Inc. 2008

14. Reverse Recovery Characteristic Reference
Trj= 20.8 (ns)
Trb= 54.4 (ns)
Conditions:Ifwd=lrev=0.2(A),Rl=50
Example
Relation between trj and trb
All Rights Reserved Copyright (c) Bee Technologies Inc. 2008