SPICE MODEL of TPCM8003-H (Standard+BDS) in SPICE PARK. English Version is http://www.spicepark.net. Japanese Version is http://www.spicepark.com by Bee Technologies.

1. Device Modeling Report
COMPONENTS: Power MOSFET (Model Parameter)
PART NUMBER: TPCM8003-H
MANUFACTURER: TOSHIBA
Body Diode (Model Parameter)
Bee Technologies Inc.
All Rights Reserved Copyright (c) Bee Technologies Inc. 2008

2. Circuit Configuration
MOSFET MODEL
Pspice model
Model description
parameter
LEVEL
L Channel Length
W Channel Width
KP Transconductance
RS Source Ohmic Resistance
RD Ohmic Drain Resistance
VTO Zero-bias Threshold Voltage
RDS Drain-Source Shunt Resistance
TOX Gate Oxide Thickness
CGSO Zero-bias Gate-Source Capacitance
CGDO Zero-bias Gate-Drain Capacitance
CBD Zero-bias Bulk-Drain Junction Capacitance
MJ Bulk Junction Grading Coefficient
PB Bulk Junction Potential
FC Bulk Junction Forward-bias Capacitance Coefficient
RG Gate Ohmic Resistance
IS Bulk Junction Saturation Current
N Bulk Junction Emission Coefficient
RB Bulk Series Resistance
PHI Surface Inversion Potential
GAMMA Body-effect Parameter
DELTA Width effect on Threshold Voltage
ETA Static Feedback on Threshold Voltage
THETA Modility Modulation
KAPPA Saturation Field Factor
VMAX Maximum Drift Velocity of Carriers
XJ Metallurgical Junction Depth
UO Surface Mobility
All Rights Reserved Copyright (c) Bee Technologies Inc. 2008

3. Transconductance Characteristic
Circuit Simulation Result
60
Measurement
Simulation
50
40
gfs
30
20
10
0
0 2 4 6 8
ID : Drain Current A
Comparison table
gfs
Id(A) Error(%)
Measurement Simulation
0.100 1.450 1.448 -0.138
0.200 2.800 2.878 2.786
0.500 4.850 5.000 3.093
1.000 9.000 9.091 1.011
2.000 14.500 14.605 0.724
5.000 29.500 30.258 2.569
10.000 36.500 37.453 2.611
All Rights Reserved Copyright (c) Bee Technologies Inc. 2008

4. Vgs-Id Characteristic
Circuit Simulation result
40A
32A
24A
16A
8A
0A
1.0V 1.5V 2.0V 2.5V 3.0V 3.5V 4.0V 4.5V 5.0V
I(V3)
V_V2
Evaluation circuit
V3
0Vdc
U1
TPCM8003-H
Vv ariable
10Vdc 10Vdc
V2
0
All Rights Reserved Copyright (c) Bee Technologies Inc. 2008

5. Comparison Graph
Circuit Simulation Result
Measurement
Simulation
16
ID : Drain Current A
8
0
0.0 1.0 2.0 3.0 4.0 5.0
VGS : Gate to Source Voltage V
Simulation Result
VGS(V)
ID(A) Error (%)
Measurement Simulation
0.100 2.590 2.570 -0.772
0.200 2.660 2.600 -2.256
0.500 2.700 2.640 -2.222
1.000 2.750 2.670 -2.909
2.000 2.850 2.750 -3.509
5.000 3.050 2.950 -3.279
10.000 3.200 3.100 -3.125
20.000 3.380 3.270 -3.254
All Rights Reserved Copyright (c) Bee Technologies Inc. 2008

6. Rds(on) Characteristic
Circuit Simulation result
15A
12A
9A
6A
3A
0A
0V 40mV 80mV 120mV 160mV 200mV
I(V3)
V_VDS
Evaluation circuit
V3
0Vdc
U1
TPCM8003-H
VDS
10Vdc 0Vdc
VGS
0
Simulation Result
ID=11A, VGS=10V Measurement Simulation Error (%)
R DS (on) () 0.0098 0.0098 0.000
All Rights Reserved Copyright (c) Bee Technologies Inc. 2008

7. Gate Charge Characteristic
Circuit Simulation result
20V
16V
12V
8V
4V
0V
0 5n 10n 15n 20n 25n 30n
V(W1:3)
Time*1mS
Evaluation circuit
V2
0Vdc
U1
TPCM8003-H
Dbreak
PER = 1000u D1
PW = 600u W1 I2
TF = 10n + 21Adc
TR = 10n
TD = 0
-
I2 = 1m W
I1 IOFF = 0.1mA
I1 = 0 ION = 0uA V1
24Vdc
0
Simulation Result
VDD=24V,ID=21A
Measurement Simulation Error (%)
,VGS=10V
Qgs(nc) 4.700 4.702 0.043
Qgd(nc) 3.400 3.430 0.882
Qg(nc) 21.000 18.358 -12.581
All Rights Reserved Copyright (c) Bee Technologies Inc. 2008

8. Capacitance Characteristic
Measurement
Simulation
Simulation Result
Cbd(pF)
VDS(V) Error(%)
Measurement Simulation
0.100 810.000 815.000 0.617
0.200 770.000 760.000 -1.299
0.500 650.000 645.000 -0.769
1.000 515.000 520.000 0.971
2.000 430.000 420.000 -2.326
5.000 300.000 295.000 -1.667
10.000 216.000 215.000 -0.463
20.000 148.000 152.000 2.703
All Rights Reserved Copyright (c) Bee Technologies Inc. 2008

9. Switching Time Characteristic
Circuit Simulation result
16V
14V
12V
10V
8V
6V
4V
2V
0V
1.88us 1.96us 2.04us 2.12us 2.20us 2.28us
V(2) V(3)/1.5
Time
Evaluation circuit
3 L2
50n
U1
TPCM8003-H RL
1.36
R1 L1 2
V1 = 0 4.7 30nH VDD
V2 = 20 V2 15Vdc
TD = 2u R2
TR = 6n
TF = 7n 4.7
PW = 2u
PER = 10u
0
Simulation Result
ID=11A, VDD=15V
Measurement Simulation Error(%)
VGS=10V
Ton(ns) 9.300 9.290 -0.108
All Rights Reserved Copyright (c) Bee Technologies Inc. 2008

10. Output Characteristic
Circuit Simulation result
8 6 5 4.5
20A
10 4 3.4
3.3
16A
3.2
12A
3.1
8A
4A VGS= 2.9 V
0A
0V 0.4V 0.8V 1.2V 1.6V 2.0V
I(Vdsense)
V_Vvariable
Evaluation circuit
Vdsense
0Vdc
U1
TPCM8003-H
Vv ariable
0Vdc
10Vdc
Vstep
0
All Rights Reserved Copyright (c) Bee Technologies Inc. 2008

11. BODY DIODE SPICE MODEL
Forward Current Characteristic
Circuit Simulation Result
100A
10A
1.0A
0V 0.2V 0.4V 0.6V 0.8V 1.0V 1.2V
I(R1)
V_V1
Evaluation Circuit
R1
0.01m
V1
0Vdc U1
TPCM8003-H
0
All Rights Reserved Copyright (c) Bee Technologies Inc. 2008

12. Comparison Graph
Circuit Simulation Result
100.000
Measurement
Simulation
Drain reverse current IDR(A)
10.000
1.000
0 0.5 1 1.5
Source: Drain voltage VSD(V)
Simulation Result
VSD(V) VSD(V)
IDR(A) %Error
Measurement Simulation
1.000 0.690 0.690 0.000
2.000 0.710 0.712 0.282
5.000 0.750 0.751 0.133
10.000 0.790 0.793 0.380
20.000 0.850 0.855 0.588
50.000 1.010 1.010 0.000
All Rights Reserved Copyright (c) Bee Technologies Inc. 2008

13. Reverse Recovery Characteristic
Circuit Simulation Result
400mA
200mA
0A
-200mA
-400mA
19.88us 19.96us 20.04us 20.12us 20.20us 20.28us
I(R1)
Time
Evaluation Circuit
R1
50
V1 = -9.4v V1
V2 = 10.6v U1
TD = 15n TPCM8003-H
TR = 10ns
TF = 9ns
PW = 20us
PER = 100us
0
Compare Measurement vs. Simulation
Measurement Simulation Error (%)
Trj(ns) 15.200 15.030 -1.118
All Rights Reserved Copyright (c) Bee Technologies Inc. 2008

14. Reverse Recovery Characteristic Reference
Trj= 15.2 (ns)
Trb= 33.6 (ns)
Conditions:Ifwd=lrev=0.2(A),Rl=50
Example
Relation between trj and trb
All Rights Reserved Copyright (c) Bee Technologies Inc. 2008