SPICE MODEL of PC357NT in SPICE PARK. English Version is http://www.spicepark.net. Japanese Version is http://www.spicepark.com by Bee Technologies.

1. Device Modeling Report
COMPONENTS:PHOTOCOUPLER
PART NUMBER:PC357NT
MANUFACTURER: SHARP
Bee Technologies Inc.
All Rights Reserved Copyright (c) Bee Technologies Inc. 2004

2. DIODE MODEL
Pspice model
Model description
Parameter
IS Saturation Current
N Emission Coefficient
RS Series Resistance
IKF High-injection Knee Current
CJO Zero-bias Junction Capacitance
M Junction Grading Coefficient
VJ Junction Potential
ISR Recombination Current Saturation Value
BV Reverse Breakdown Voltage(a positive value)
IBV Reverse Breakdown Current(a positive value)
TT Transit Time
BIPOLAR JUNCTION TRANSISTOR MODEL
Pspice
model Model description
parameter
NR Reverse Emission Coefficient
RB Base Resistance
RC Series Collector Resistance
CJE Zero-bias Emitter-Base Junction Capacitance
CJC Zero-bias Collector-Base Junction Capacitance
TF Forward Transit Time
TR Reverse Transit Time
VOLTAGE CONTROLLED VOLTAGE SOURCE MODEL(VCVS)
E<Name><(+)Node><(－)Node>VALUE={Expression}
E<Name><(+)Node><(－)Node>TABLE={Expression}
All Rights Reserved Copyright (c) Bee Technologies Inc. 2004

3. VOLTAGE CONTROLLED CURRENT SOURCE MODEL(VCCS)
E<Name><(+)Node><(－)Node>VALUE={Expression}
CURRENT CONTROLLED MODEL(W)
Pspice
model Model description
parameter
IOFF Controlling current to Off state
ION Controlling current to On state
ROFF Off Resistance
RON On Resistance
All Rights Reserved Copyright (c) Bee Technologies Inc. 2004

4. Input Device Forward Current Characteristics
Measurement
Simulation
Input Device Junction Capacitance Characteristics
Measurement
Simulation
All Rights Reserved Copyright (c) Bee Technologies Inc. 2004

5. Input Device Reverse Recovery Characteristics
Measurement
trj=228n(s)
trb=300n(s)
Conditions:Ifwd=Irev=0.04(A),Rl=50
Example
Relation between trj and trb
All Rights Reserved Copyright (c) Bee Technologies Inc. 2004

6. LED IV Curve Characteristics
Evaluation Circuit
U1
1 4
A C
I1 V1
2 3 2Vdc
20mAdc K E
PC357NT
0 0
Simulation result
Simulation
All Rights Reserved Copyright (c) Bee Technologies Inc. 2004

7. Comparison Table
Vfwd(V)
Ifwd(A) % Error
Measurement Simulation
0.001 1.074 1.0632 -1.006
0.002 1.089 1.0995 0.964
0.005 1.148 1.1524 0.383
0.01 1.192 1.2006 0.721
0.02 1.281 1.2635 -1.366
0.05 1.392 1.3966 0.330
All Rights Reserved Copyright (c) Bee Technologies Inc. 2004

8. Transistor Saturation Characteristics
Evaluation Circuit
U1
1 4
A C
I1
2 3 I2
20mAdc K E
PC357NT 1mAdc
0 0
Simulation result
Simulation
Comparison Table
Measurement Simulation % Error
Vce(sat) (V) 0.2 0.199 -0.5
All Rights Reserved Copyright (c) Bee Technologies Inc. 2004

9. CTR(Current Transfer Ratio) Characteristics
Evaluation Circuit
V2 V3
0Vdc 0Vdc
U1
1 4
A C
V1
I1 5Vdc
2 3
20mAdc K E
PC357NT
0 0
Simulation result
Simulation
All Rights Reserved Copyright (c) Bee Technologies Inc. 2004

10. Rise Curve Table
CTR(%)
If(mA) % Error
Measurement Simulation
1 145 149.626 3.190
2 210 200.635 -4.460
4 260 251.413 -3.303
6 290 281.021 -3.096
9 311 310.547 -0.146
10 318.7 318.13 -0.179
Fall Curve Table
CTR(%)
If(mA) % Error
Measurement Simulation
10 318.70 318.13 -0.179
20 240.00 228.263 -4.890
30 175.00 176.612 0.921
40 140.00 139.994 -0.004
50 115.00 111.607 -2.950
All Rights Reserved Copyright (c) Bee Technologies Inc. 2004

11. Switching Time Characteristics
Evaluation Circuit
V2
0Vdc
U1 R1
1 4
A C 100
PW = 20u I1
PER = 500u
TF = 10n 2 3
TR = 10n K E
TD = 0 PC357NT
I2 = 20m
I1 = 0 V1
2Vdc
0 0
Simulation result
Simulation
Comparison Table
Vcc=2V,IC=2mA,RL=100 Measurement Simulation % Error
Ts (us) 0.48 0.487353 1.532
Tf (us) 6.9 6.8875 -0.181
All Rights Reserved Copyright (c) Bee Technologies Inc. 2004