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Device Modeling Report



     COMPONENTS: TRANSISTOR
     PART NUMBER: 2SC6081
     MANUFACTURER: SANYO




              Bee Technologies Inc.



All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
                                                               1
TRANSISTOR MODEL

 PSpice model
                                         Model description
  parameter
      IS        Saturation Current
      BF        Ideal Maximum Forward Beta
      NF        Forward Current Emission Coefficient
     VAF        Forward Early Voltage
     IKF        Forward Beta Roll-off Knee Current
     ISE        Non-ideal Base-Emitter Diode Saturation Current
      NE        Non-ideal Base-Emitter Diode Emission Coefficient
      BR        Ideal Maximum Reverse Beta
      NR        Reverse Emission Coefficient
     VAR        Reverse Early Voltage
     IKR        Reverse Beta Roll-off Knee Current
     ISC        Non-ideal Base-Collector Diode Saturation Current
      NC        Non-ideal Base-Collector Diode Emission Coefficient
      NK        Forward Beta Roll-off Slope Exponent
      RE        Emitter Resistance
      RB        Base Resistance
      RC        Series Collector Resistance
     CJE        Zero-bias Emitter-Base Junction Capacitance
     VJE        Emitter-Base Junction Potential
     MJE        Emitter-Base Junction Grading Coefficient
     CJC        Zero-bias Collector-Base Junction Capacitance
     VJC        Collector-base Junction Potential
     MJC        Collector-base Junction Grading Coefficient
      FC        Coefficient for Onset of Forward-bias Depletion
                Capacitance
      TF        Forward Transit Time
     XTF        Coefficient for TF Dependency on Vce
     VTF        Voltage for TF Dependency on Vce
     ITF        Current for TF Dependency on Ic
     PTF        Excess Phase at f=1/2pi*TF
     TR         Reverse Transit Time
     EG         Activation Energy
     XTB        Forward Beta Temperature Coefficient
     XTI        Temperature Coefficient for IS




            All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
                                                                           2
Reverse

Reverse Early Voltage Characteristic




                                      Ic




                                                  VAR
                                                                   Vce



                                                    Y=aX+b
                                 (X1,Y1)
                            (X2,Y2)




            All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
                                                                           3
Reverse DC Beta Characteristic (Ie vs. hFE)

               Measurement
               Simulation




                                     Emitter Current




            All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
                                                                           4
Forward

Forward Early Voltage Characteristic




                                 Ic (X2,Y2)

              Y=aX+b                                         (X1,Y1)




                                                             Vce
                      VAF



            All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
                                                                           5
C-B Capacitance Characteristics

                                                      Measurement
                                                      Simulation




E-B Capacitance Characteristics


                                                      Measurement
                                                      Simulation




          All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
                                                                         6
Transistor hFE-IC Characteristics

 Circuit Simulation Result

          1.0K




           100




            10
            1.0mA          10mA                  100mA              1.0A        10A
                I(vsence)/ IB(Q1)
                                             I(vsence)


Evaluation Circuit


                                                         v sence


                                                 0Vdc



                                             Q1
                                             Q2SC6081
                                                                   V1

                              I1
                                                                   2Vdc
                             0Adc




                                             0




                 All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
                                                                                      7
Comparison Graph

 Circuit Simulation Result




Simulation Result

                                        hFE
              IC(A)                                                  Error(%)
                             Measurement    Simulation
                    0.01          480.000       496.844                       3.509
                    0.02          490.000       499.331                       1.904
                    0.05          500.000       507.390                       1.478
                    0.10          503.000       505.896                       0.576
                    0.20          505.000       501.448                      -0.703
                    0.50          500.000       487.697                      -2.461
                    1.00          482.000       464.303                      -3.672
                    2.00          430.000       415.475                      -3.378
                    3.00          370.000       364.008                      -1.619
                    5.00          240.000       243.782                       1.576



              All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
                                                                                      8
VCE(Sat)-IC Characteristics

 Circuit Simulation Result

           7.0V




           1.0V




          100mV




           10mV




          1.0mV
              10mA                        100mA                 1.0A          7.0A
                  V(Q1:c)
                                                  IC(Q1)


 Evaluation Circuit


                                                           VC




                                                   Q1
                                                   Q2SC6081
                                     F1
                                     F
                                I1   20

                            0Adc




                            0




               All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
                                                                                     9
Comparison Graph

 Circuit Simulation Result




Simulation Result

                                   VCE(sat)(V)
             IC(A)                                                  Error(%)
                           Measurement     Simulation
                    0.01          0.007           0.007                      -1.43
                    0.02          0.008           0.008                       1.33
                    0.05          0.009           0.010                       1.06
                    0.10          0.013           0.013                      -1.54
                    0.20          0.019           0.019                       1.58
                    0.50          0.035           0.036                       2.86
                    1.00          0.057           0.059                       3.51
                    2.00          0.100           0.096                      -3.60
                    5.00          0.230           0.240                       4.35




              All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
                                                                                     10
VBE(Sat)-IC Characteristics

 Circuit Simulation Result

            10V




           1.0V




          100mV
              10mA                        100mA                   1.0A        10A
                  V(Q1:b)
                                                  IC(Q1)


 Evaluation Circuit

                                                             VC




                                                  Q1
                                                  Q2SC6081
                                     F1
                                     F
                                I1   20

                            0Adc




                            0




               All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
                                                                                    11
Comparison Graph

 Circuit Simulation Result




Simulation Result

                                 VBE(sat)(V)
            IC(A)                                                   Error(%)
                         Measurement      Simulation
                0.01             0.630            0.644                       2.22
                0.02             0.650            0.663                       2.00
                0.05             0.680            0.689                       1.32
                0.10             0.710            0.711                       0.14
                0.20             0.750            0.736                      -1.87
                0.50             0.800            0.782                      -2.25
                1.00             0.850            0.834                      -1.88
                2.00             0.920            0.914                      -0.65
                5.00             1.077            1.102                       2.32




              All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
                                                                                     12
Switching Characteristics

Circuit simulation result

            10V           40V
        1           2




             5V           20V




             0V             0V




            -5V         -20V




                          >>
            -10V        -40V
                          2.0us            3.0us           4.0us    5.0us           6.0us          7.0us 8.0us
                             1            V(L2:1)      2       V(Q1:c)
                                                                    Time


Evaluation circuit

                                                                                        L1         RL
                                                                                1              2
                                                                                        30nH       10
                                                               D1        R1

                                                L2
                                                                         51.3                            VCC
                                            1          2       D1N5817              Q1
                                                               D2        R2         Q2SC6081
                                                30nH
                        V1 = 5
                        V2 = -5      V1                                                                  25
                        TD = 5u                                D1N5817   72.6
                        TF = 1ns
                        TR = 1ns
                        PW = 20us
                        PER = 20us

                                                                                    0




Simulation result

                                          Measurement                     Simulation                    %Error
             tf (ns)                                       42.000                   42.500                    1.190
            tstg (ns)                                  600.000                  602.261                       0.377
                   All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
                                                                                                                      13
Output Characteristics

 Circuit Simulation Result

          5.0A
                                                                         20mA
          4.5A

          4.0A
                                                                         10mA
          3.5A

          3.0A

          2.5A
                                                                          5mA

          2.0A

          1.5A
                                                                          2mA
          1.0A

          0.5A
                                                                        IB=0mA
            0A
              0V                  0.5V         1.0V            1.5V             2.0V
                   IC(Q1)
                                               V_V1


Evaluation Circuit




                                          Q1
                                          Q2SC6081
                                                                V1

                             I1
                                                                2Vdc
                            0Adc




                                          0




                 All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
                                                                                       14
Output Characteristics                                              Reference




          All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
                                                                                15

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SPICE MODEL of 2SC6081 in SPICE PARK

  • 1. Device Modeling Report COMPONENTS: TRANSISTOR PART NUMBER: 2SC6081 MANUFACTURER: SANYO Bee Technologies Inc. All Rights Reserved Copyright (c) Bee Technologies Inc. 2008 1
  • 2. TRANSISTOR MODEL PSpice model Model description parameter IS Saturation Current BF Ideal Maximum Forward Beta NF Forward Current Emission Coefficient VAF Forward Early Voltage IKF Forward Beta Roll-off Knee Current ISE Non-ideal Base-Emitter Diode Saturation Current NE Non-ideal Base-Emitter Diode Emission Coefficient BR Ideal Maximum Reverse Beta NR Reverse Emission Coefficient VAR Reverse Early Voltage IKR Reverse Beta Roll-off Knee Current ISC Non-ideal Base-Collector Diode Saturation Current NC Non-ideal Base-Collector Diode Emission Coefficient NK Forward Beta Roll-off Slope Exponent RE Emitter Resistance RB Base Resistance RC Series Collector Resistance CJE Zero-bias Emitter-Base Junction Capacitance VJE Emitter-Base Junction Potential MJE Emitter-Base Junction Grading Coefficient CJC Zero-bias Collector-Base Junction Capacitance VJC Collector-base Junction Potential MJC Collector-base Junction Grading Coefficient FC Coefficient for Onset of Forward-bias Depletion Capacitance TF Forward Transit Time XTF Coefficient for TF Dependency on Vce VTF Voltage for TF Dependency on Vce ITF Current for TF Dependency on Ic PTF Excess Phase at f=1/2pi*TF TR Reverse Transit Time EG Activation Energy XTB Forward Beta Temperature Coefficient XTI Temperature Coefficient for IS All Rights Reserved Copyright (c) Bee Technologies Inc. 2008 2
  • 3. Reverse Reverse Early Voltage Characteristic Ic VAR Vce Y=aX+b (X1,Y1) (X2,Y2) All Rights Reserved Copyright (c) Bee Technologies Inc. 2008 3
  • 4. Reverse DC Beta Characteristic (Ie vs. hFE) Measurement Simulation Emitter Current All Rights Reserved Copyright (c) Bee Technologies Inc. 2008 4
  • 5. Forward Forward Early Voltage Characteristic Ic (X2,Y2) Y=aX+b (X1,Y1) Vce VAF All Rights Reserved Copyright (c) Bee Technologies Inc. 2008 5
  • 6. C-B Capacitance Characteristics Measurement Simulation E-B Capacitance Characteristics Measurement Simulation All Rights Reserved Copyright (c) Bee Technologies Inc. 2008 6
  • 7. Transistor hFE-IC Characteristics Circuit Simulation Result 1.0K 100 10 1.0mA 10mA 100mA 1.0A 10A I(vsence)/ IB(Q1) I(vsence) Evaluation Circuit v sence 0Vdc Q1 Q2SC6081 V1 I1 2Vdc 0Adc 0 All Rights Reserved Copyright (c) Bee Technologies Inc. 2008 7
  • 8. Comparison Graph Circuit Simulation Result Simulation Result hFE IC(A) Error(%) Measurement Simulation 0.01 480.000 496.844 3.509 0.02 490.000 499.331 1.904 0.05 500.000 507.390 1.478 0.10 503.000 505.896 0.576 0.20 505.000 501.448 -0.703 0.50 500.000 487.697 -2.461 1.00 482.000 464.303 -3.672 2.00 430.000 415.475 -3.378 3.00 370.000 364.008 -1.619 5.00 240.000 243.782 1.576 All Rights Reserved Copyright (c) Bee Technologies Inc. 2008 8
  • 9. VCE(Sat)-IC Characteristics Circuit Simulation Result 7.0V 1.0V 100mV 10mV 1.0mV 10mA 100mA 1.0A 7.0A V(Q1:c) IC(Q1) Evaluation Circuit VC Q1 Q2SC6081 F1 F I1 20 0Adc 0 All Rights Reserved Copyright (c) Bee Technologies Inc. 2008 9
  • 10. Comparison Graph Circuit Simulation Result Simulation Result VCE(sat)(V) IC(A) Error(%) Measurement Simulation 0.01 0.007 0.007 -1.43 0.02 0.008 0.008 1.33 0.05 0.009 0.010 1.06 0.10 0.013 0.013 -1.54 0.20 0.019 0.019 1.58 0.50 0.035 0.036 2.86 1.00 0.057 0.059 3.51 2.00 0.100 0.096 -3.60 5.00 0.230 0.240 4.35 All Rights Reserved Copyright (c) Bee Technologies Inc. 2008 10
  • 11. VBE(Sat)-IC Characteristics Circuit Simulation Result 10V 1.0V 100mV 10mA 100mA 1.0A 10A V(Q1:b) IC(Q1) Evaluation Circuit VC Q1 Q2SC6081 F1 F I1 20 0Adc 0 All Rights Reserved Copyright (c) Bee Technologies Inc. 2008 11
  • 12. Comparison Graph Circuit Simulation Result Simulation Result VBE(sat)(V) IC(A) Error(%) Measurement Simulation 0.01 0.630 0.644 2.22 0.02 0.650 0.663 2.00 0.05 0.680 0.689 1.32 0.10 0.710 0.711 0.14 0.20 0.750 0.736 -1.87 0.50 0.800 0.782 -2.25 1.00 0.850 0.834 -1.88 2.00 0.920 0.914 -0.65 5.00 1.077 1.102 2.32 All Rights Reserved Copyright (c) Bee Technologies Inc. 2008 12
  • 13. Switching Characteristics Circuit simulation result 10V 40V 1 2 5V 20V 0V 0V -5V -20V >> -10V -40V 2.0us 3.0us 4.0us 5.0us 6.0us 7.0us 8.0us 1 V(L2:1) 2 V(Q1:c) Time Evaluation circuit L1 RL 1 2 30nH 10 D1 R1 L2 51.3 VCC 1 2 D1N5817 Q1 D2 R2 Q2SC6081 30nH V1 = 5 V2 = -5 V1 25 TD = 5u D1N5817 72.6 TF = 1ns TR = 1ns PW = 20us PER = 20us 0 Simulation result Measurement Simulation %Error tf (ns) 42.000 42.500 1.190 tstg (ns) 600.000 602.261 0.377 All Rights Reserved Copyright (c) Bee Technologies Inc. 2008 13
  • 14. Output Characteristics Circuit Simulation Result 5.0A 20mA 4.5A 4.0A 10mA 3.5A 3.0A 2.5A 5mA 2.0A 1.5A 2mA 1.0A 0.5A IB=0mA 0A 0V 0.5V 1.0V 1.5V 2.0V IC(Q1) V_V1 Evaluation Circuit Q1 Q2SC6081 V1 I1 2Vdc 0Adc 0 All Rights Reserved Copyright (c) Bee Technologies Inc. 2008 14
  • 15. Output Characteristics Reference All Rights Reserved Copyright (c) Bee Technologies Inc. 2008 15