SPICE MODEL of TPCP8402 (Professional+BDP N&P Model) in SPICE PARK

Device Modeling Report

COMPONENTS: Power MOSFET (Professional)
PART NUMBER: TPCP8402
MANUFACTURER: TOSHIBA
Body Diode (Professional) / ESD Protection Diode
REMARK: Silicon N&P Channel MOS Type

Bee Technologies Inc.

All Rights Reserved Copyright (c) Bee Technologies Inc. 2005

MOSFET MODEL

Pspice model
Model description
parameter
LEVEL
L Channel Length
W Channel Width
KP Transconductance
RS Source Ohmic Resistance
RD Ohmic Drain Resistance
VTO Zero-bias Threshold Voltage
RDS Drain-Source Shunt Resistance
TOX Gate Oxide Thickness
CGSO Zero-bias Gate-Source Capacitance
CGDO Zero-bias Gate-Drain Capacitance
CBD Zero-bias Bulk-Drain Junction Capacitance
MJ Bulk Junction Grading Coefficient
PB Bulk Junction Potential
FC Bulk Junction Forward-bias Capacitance Coefficient
RG Gate Ohmic Resistance
IS Bulk Junction Saturation Current
N Bulk Junction Emission Coefficient
RB Bulk Series Resistance
PHI Surface Inversion Potential
GAMMA Body-effect Parameter
DELTA Width effect on Threshold Voltage
ETA Static Feedback on Threshold Voltage
THETA Modility Modulation
KAPPA Saturation Field Factor
VMAX Maximum Drift Velocity of Carriers
XJ Metallurgical Junction Depth
UO Surface Mobility


P-Channel Model

Transconductance Characteristic

Circuit Simulation Result

Comparison table

gfs
Id(A) Error(%)
Measurement Simulation
-0.500 4.000 4.025 0.625
-1.000 5.700 5.800 1.754
-2.000 7.000 7.036 0.514
-5.000 8.900 8.846 -0.606


Vgs-Id Characteristic

Circuit Simulation result

-8.0A

-6.0A

-4.0A

-2.0A

0A
0V -1.0V -2.0V -3.0V -4.0V -5.0V -6.0V
I(V3)
V_V2

Evaluation circuit

TPCP8402
V3

0Vdc

open
open open
V1
open U16 open
R1
V2 -10Vdc
0Vdc 100MEG

0

0


Comparison Graph


Simulation Result

VGS(V)
ID(A) Error (%)
-1.000 -2.150 -2.100 -2.325
-2.000 -2.320 -2.286 -1.465
-4.000 -2.600 -2.557 -1.653
-6.000 -2.800 -2.779 -0.750
-8.000 -3.000 -2.977 -0.767


Rds(on) Characteristic


-3.0A

-2.5A

-2.0A

-1.5A

-1.0A

-0.5A

0A
0V -50mV -150mV -250mV -350mV -450mV
I(V3)
V_VDS

Evaluation circuit

TPCP8402

V3

0Vdc
open
open open

open U16 open
VGS 0Vdc VDS
-4.5Vdc R1
100MEG

0

0

Simulation Result

ID=-1.7A, VGS=-4.5V Measurement Simulation Error (%)
R DS (on) 80.000 m 80.000 m 0.000


Gate Charge Characteristic

-15.00V

-13.75V

-12.50V

-11.25V
-12V
-10.00V

-8.75V -6V
-7.50V
VDD=-24V
-6.25V

-5.00V

-3.75V

-2.50V

-1.25V

0V
0 2n 4n 6n 8n 10n 12n 14n 16n
V(W1:2)
Time*1ms

Evaluation circuit

TPCP8402
V2

ION = 0uA
IOFF = 100uA 0Vdc
W
-
open open open
I1 = 0 +
I1 open U16 open
I2 = 1m W1 D1
TD = 0
TR = 10n I2 R1
TF = 10n Dbreak -3.4Adc
PW = 600u 100MEG
PER = 1000u

V1 0
-24Vdc

0

Simulation Result

VDD=-24V,ID=-3.4A Measurement Simulation Error (%)
,VGS=-10V
Qgs 1.400 nC 1.393 nC -0.500
Qgd 2.700 nC 2.712 nC 0.445
Qg 14.000 nC 14.000 nC 0.000


Capacitance Characteristic

Measurement
Simulation

Simulation Result

Cbd(pF)
VDS(V) Error(%)
0.200 45.000 44.300 -1.556
0.500 33.000 33.520 1.575
1.000 24.000 24.850 3.541
2.000 17.000 17.000 0.000
5.000 10.000 9.980 -0.200
10.000 7.000 6.870 -1.857


Switching Time Characteristic


-12V

VDD =-15V Vg = 0/-10.0V
-8V

-4V

0V
4.96us 4.98us 5.00us 5.02us 5.04us 5.06us 5.08us
V(2) V(3)/1.5
Time

Evaluation circuit

TPCP8402

RG L1 L2 R2

30nH 50nH 8.82 open
4.7
open open
V1 = 0
V2 = -20 V2 R1 U16 R9
open open
TD = 2u V1
4.7 -15Vdc 100MEG
TR = 6n
TF = 7n
PW = 20u
PER = 2000u 0

0

Simulation Result

ID=-3.4A, VDD=-15V
Measurement Simulation Error(%)
VGS=0/10V
ton 12.000 ns 11.935 ns -0.541


Output Characteristic


-10A

-4.5V
-3.5V
-8A

-6A
-2.8V

-2.7V
-4A
-2.6V

-2A -2.5V

VGS=-2.3V
0A
0V -1.0V -2.0V -3.0V -4.0V -5.0V
I(Vdsense)
V_Vvariable

Evaluation circuit

TPCP8402 Vdsense

0Vdc

open
Vstep open open
Vv ariable
open U16 open
-10Vdc -10Vdc
R1
100MEG

0

0


Forward Current Characteristic


10A

1.0A

100mA
0V 0.2V 0.4V 0.6V 0.8V 1.0V 1.2V
I(V2)
V_V3

Evaluation Circuit

R1

0.01m

openopen
open

U16
V1
0Vdc TPCP8402 Ropen
100MEG

openopen 0

0


Comparison Graph


Simulation Result

Vfwd(V) Vfwd(V)
Ifwd(A) Measurement Simulation %Error
0.100 0.600 0.605 0.833
0.200 0.660 0.653 -1.061
0.500 0.720 0.718 -0.278
1.000 0.780 0.769 -1.410
2.000 0.830 0.820 -1.205
5.000 0.940 0.904 -3.830


Reverse Recovery Characteristic


400mA

300mA

200mA

100mA

-0mA

-100mA

-200mA

-300mA

-400mA
0.958us 1.000us 1.050us 1.098us
I(R1)
Time

Evaluation Circuit

R1

50
V1 = {-9.7}

V2 = {10.6}

TD = 5.0799n
V1
TR = 10n D8402_P

TF = 10n

PW = 15u

PER = 100u
0
0

Compare Measurement vs. Simulation

Measurement Simulation Error (%)
trj 5.200 ns 5.160 ns -0.769
trb 10.400 ns 10.400 ns 0.000
trr 15.600 ns 5.240 ns -2.307


Reverse Recovery Characteristic Reference

Trj=5.2(ns)
Trb=10.4(ns)
Conditions:Ifwd=lrev=0.2(A),Rl=50

Example

Relation between trj and trb


Zener Voltage Characteristic

-10mA

-9mA

-8mA

-7mA

-6mA

-5mA

-4mA

-3mA

-2mA

-1mA

0A
0V -5V -10V -15V -20V -25V -30V -35V -40V -45V
I(R1)
V_V1

Evaluation Circuit

R1

0.01m

TPCP8402
open
open
V1
open
0Vdc Ropen
open open 100MEG

open U16 open

0

0


Zener Voltage Characteristic Reference


N-Channel Model

Transconductance Characteristic


Comparison table

gfs
Id(A) Error(%)
0.500 3.000 3.100 3.333
1.000 5.000 5.181 3.620
2.000 7.000 6.898 -1.457
5.000 9.300 9.572 2.924


Vgs-Id Characteristic


8.0A

6.0A

4.0A

2.0A

0A
0V 1.0V 2.0V 3.0V 4.0V 5.0V 6.0V
I(V3)
V_V2

Evaluation circuit

U16 V3

0Vdc

open open
open
open open V1

TPCP8402
10Vdc R1
V2
0Vdc 100MEG

0

0


Comparison Graph


Simulation Result

VGS(V)
ID(A) Error (%)
1.000 2.700 2.697 -0.111
2.000 2.900 2.896 -0.138
4.000 3.200 3.206 0.187
6.000 3.500 3.462 -1.086
8.000 3.700 3.691 -0.243


Rds(on) Characteristic


2.0A

1.0A

0A
0V 50mV 100mV 150mV 200mV 250mV 300mV 350mV 400mV 450mV
I(V3)
V_V2

Evaluation circuit

U16 V3

0Vdc

open
open open

open open
VGS 0Vdc VDS Ropen
4.5Vdc TPCP8402
100MEG

0

0

Simulation Result

ID=3.1A, VGS=4.5V Measurement Simulation Error (%)
R DS (on) 58.000 m 5.969 m -0.053


Gate Charge Characteristic
15.00V

13.75V

12.50V

11.25V

10.00V

8.75V

7.50V

6.25V

5.00V

3.75V

2.50V

1.25V

0V
0 2n 4n 6n 8n 10n 12n 14n 16n
V(W1:2)
Time*1ms

Evaluation circuit

U16 V2

0Vdc

open open open
Dbreak
PER = 1000u W1 open open
PW = 600u +
TF = 10n D1
-
TR = 10n TPCP8402 I2 Ropen
TD = 0 W 6Adc
I2 = 1m IOFF = 100uA 100MEG
I1 ION = 0uA
I1 = 0

V1 0
24Vdc

0

Simulation Result

VDD=24V,ID=6A Measurement Simulation Error (%)
,VGS=10V
Qgs 1.700 nC 1.658 nC -2.470
Qgd 2.400 nC 2.400 nC 0.000
Qg 10.000 nC 10.000 nC 0.000


Capacitance Characteristic

Measurement
Simulation

Simulation Result

Cbd(pF)
VDS(V) Error(%)
0.100 120.000 120.000 0.000
0.200 105.000 106.215 1.157
0.500 80.000 81.540 1.925
1.000 60.000 60.876 1.460
2.000 42.000 43.052 2.505
5.000 25.000 25.000 0.000
10.000 16.000 16.120 0.750


Switching Time Characteristic


12V
VDD = 15V Vg = 0/10.0V

8V

4V

0V
4.96us 4.98us 5.00us 5.02us 5.04us 5.06us 5.08us
V(2) V(3)/1.5
Time

Evaluation circuit

U16 L2 R2

RG L1
50nH 7.14

30nH
open open open
4.7
open open
V1 = 0
V2 = 20 V2 R1
TD = 2u TPCP8402 V1 Ropen
4.7 15Vdc
TR = 6n 100MEG
TF = 7n
PW = 20u
PER = 2000u
0

0

Simulation Result

ID=2.1 A, VDD=15V
Measurement Simulation Error(%)
VGS=0/10V
ton 8.300 ns 8.700 ns 4.819


Output Characteristic


10A
10V, 8V
4.5V
9A 6V

8A 3.8V

7A

6A
3.5V
5A

4A

3A 3.2V

2A 3.0V

1A VGS=2.8V

0A
0V 0.5V 1.0V 1.5V 2.0V 2.5V 3.0V 3.5V 4.0V 4.5V
I(V3)
V_V2

Evaluation circuit

Vdsense
U16

0Vdc

Vv ariable
Vstep open open
10Vdc
open
open open
10Vdc

TPCP8402
R1
100MEG

0

0


Forward Current Characteristic


10A

1.0A

100mA
0V 0.2V 0.4V 0.6V 0.8V 1.0V 1.2V
I(R1)
V_V1

Evaluation Circuit

R1

0.01m
openopen

open

V1
0Vdc TPCP8402 Ropen

U16 100MEG

openopen
0

0


Comparison Graph


Simulation Result

Vfwd(V) Vfwd(V)
Ifwd(A) Measurement Simulation %Error
0.100 0.710 0.706 - 0.563
0.200 0.720 0.723 0.416
0.500 0.750 0.750 0.000
1.000 0.780 0.780 0.000
2.000 0.820 0.820 0.000
5.000 0.910 0.908 - 0.219
10.000 1.020 1.020 0.000


Reverse Recovery Characteristic

400mA

300mA

200mA

100mA

-0mA

-100mA

-200mA

-300mA

-400mA
0.958us 1.000us 1.050us 1.098us
I(R1)
Time

Evaluation Circuit

R1

50
V1 = {-9.7}

V2 = {10.6}

TD = 5.0799n
V1
TR = 10n D8402_N

TF = 10n

PW = 15u

PER = 100u
0
0

Compare Measurement vs. Simulation

Measurement Simulation Error (%)
trj 4.800 ns 4.800 ns 0.000
trb 11.600 ns 11.600 ns 0.000
trr 16.400 ns 16.400 ns 0.000


Reverse Recovery Characteristic Reference

Trj=4.8(ns)
Trb=11.6(ns)
Conditions:Ifwd=lrev=0.2(A),Rl=50

Example

Relation between trj and trb


Zener Voltage Characteristic

10mA

9mA

8mA

7mA

6mA

5mA

4mA

3mA

2mA

1mA

0A
0V 5V 10V 15V 20V 25V 30V 35V 40V 45V 50V
I(R1)
V_V1

Evaluation Circuit

R1

0.01m U16 open
open open

V1 open open
Ropen
0Vdc
open 100MEG

open

TPCP8402 0

0


SPICE MODEL of TPCP8402 (Professional+BDP N&P Model) in SPICE PARK

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SPICE MODEL of TPCP8402 (Professional+BDP N&P Model) in SPICE PARK