TPD7210F of SPICE MODEL using PSpice
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This document provides a device modeling report for a TPD7210F power MOSFET gate driver IC from Toshiba. It includes: 1. A symbol and pin layout diagram of the IC 2. An equivalent circuit model of the internal components and operation of the IC 3. Simulation results graphs and tables characterizing the IC's performance parameters such as output voltages, current ratings, and under voltage lockout function.
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TPD7210F of SPICE MODEL using PSpice
- 1. All Rights Reserved Copyright (c) Bee Technologies Inc. 2012 1 Device Modeling Report Bee Technologies Inc. COMPONENTS: Power MOSFET Gate Driver for 3- Phase DC Motor PART NUMBER: TPD7210F MANUFACTURER: TOSHIBA
- 2. All Rights Reserved Copyright (c) Bee Technologies Inc. 2012 2 U1 TPD7210F ENB ROSC IN1 IN2 IN3 IN4 IN5 IN6 SGND1 CP1 SGND2 CP2 VDD FAULT WB PGND1 VB PGND2 UB UU VU WU CPV COSC Symbol and Pin Layout
- 3. All Rights Reserved Copyright (c) Bee Technologies Inc. 2012 3 + - + - S2S + - + - S3S H4 DdT I /O O CPON OPR HIN I-Logic IN2O IN5O IN3O IN1O IN4O IN6O FLT0 IN4 IN2 IN5 IN3 ENB IN6 IN1 SGNDOPR H1 UVD UVDSGND VDDOPR OPR OPR + - + - S4S + - + - S1S 0 0 0 0 HUBBO ISS DDB UB SGND1 HVUUO SS DDU I VU IN4 FAULT osc IN+ IN- OUT+ OUT- E5V7 Limit(V(%IN+,%IN-),0,5.7) EVALUE H2OSC 5V7 SGNDCOSC CLKROSC IN2 ROSC COSC 5V7 FLT0 UBI SGND2 HWUUO SS DDU I WU IN5 WUI RSGND2 1U VUI UUI HUUUO SS DDU I IN3 UU RPGND2 1U HVBBO ISS DDB VB VBI H3 LGCKTOSC O CMP1 CMP2 PGND2 PGND1 ENB HWBBO ISS DDB WB NFLT WBI UF NORLTPD7210F UVD SGND1 Ref1 /O IN6 CMP1 + - U1 CMPTPD7201F + - U2 CMPTPD7201F REF2 32.5Vdc CMP2 O Q IN+ IN- OUT+ OUT- REF1 V(VDD)+14 EVALUE0 IN1 CP2CP1CPV VDD Ref2 H5 FLT S D I Model Equivalent Circuit
- 4. All Rights Reserved Copyright (c) Bee Technologies Inc. 2012 4 Time 0s 2ms 4ms 6ms 8ms 10ms 12ms 14ms 16ms 18ms 20ms V(FAULT) 0V 5V 10V SEL>> 1 V(UU) 2 V(UB) 0V 5V1 >> 0V 5V 10V 15V2 1 V(ENB) 2 V(H4:CPON) -5.0V 0V 5.0V1 2.0V -0.2V 2 >> 1 V(IN1) 2 V(IN4) 0V 5.0V1 >> 0V 5V 10V2 V(VDD) 4.0V 5.0V 6.0V 7.0V *Evaluation is made from the Sub-circuit inside the IC model Timing Chart and Truth Table Circuit Simulation Result Simulation result IN ENB VOUT FAULT STATE L L L L Normal H L L L L H L L H H H L L L L H VDD under-voltage detection H L L H L H L H H H H H High-side H Low-side H L L H Upper and lower short- circuit input detectionH L H
- 5. All Rights Reserved Copyright (c) Bee Technologies Inc. 2012 5 V1 0 VENB 5 HIN I-Logic IN2O IN5O IN3O IN1O IN4O IN6O FLT0 IN4 IN2 IN5 IN3 ENB IN6 IN1 SGNDOPR OPR I IN4IN2 IN5IN3 UU IN6 ENBIN1 *Evaluation is made from the Sub-circuit inside the IC model V_V1 0V 0.5V 1.0V 1.5V 2.0V 2.5V 3.0V 3.5V 4.0V 4.5V 5.0V 1 V(HIN.IN101) 2 -I(V1) -0.2V 0V 0.2V 0.4V 0.6V 0.8V 1.0V 1.2V 1.4V 1 >> 0A 25uA 50uA 2 INPUT Characteristics Circuit Simulation Result Evaluation circuit Simulation result Parameter Condition Unit Measurement Simulation %Error VIH V 2.7 2.7 0 VIL 2.45 2.45 0 IIH VIN = 5V uA 50 50 0 IIL VIN = 0V 0 0 0
- 6. All Rights Reserved Copyright (c) Bee Technologies Inc. 2012 6 Time 1.60ms 1.64ms 1.68ms 1.72ms 1.76ms 1.80ms 1.84ms 1.88ms 1.92ms 1.96ms V(CPV) 16V 18V 20V 22V 24V 26V 28V 30V 32V 34V 36V Charge Pump Voltage Characteristics Circuit Simulation Result Simulation result Condition: CP1 = CP2 = 0.1F, ROSC = 62k, COSC = 270pF Parameter Condition Unit Measurement Simulation %Error VCPV VDD = 7V VIN1 to VIN6 = 0V V 18.9 (VDD+11.9) 19.7 4.23 VDD = 13.5V VIN1 to VIN6 = 0V V 27.5 (VDD+14) 27.5 0 VDD = 18V VIN1 to VIN6 = 0V V 32 (VDD+14) 32.1 0.31
- 7. All Rights Reserved Copyright (c) Bee Technologies Inc. 2012 7 CPV2 DCP D2 C2 0.1u WU UU VU CPVCPV COSCCOSC VB UB WB ENB 00 00 00 ENB IN1 IN3IN2 IN4 0 IN5 IN6 IN1 IN3 IN2 IN5 IN4 IN6 FAULT RFLT 13.5k VDD 7 VDD Rosc 62k 0 0 VDD C3 1u 0 Cosc 270p DCP D3 C1 0.1u DCP D1 0 VIN1 0V VIN2 0V VIN3 0V VIN4 0V VIN5 0V VIN6 0V VENB 5V ROSC CP1 CP2 U1 TPD7210F ENB ROSC IN1 IN2 IN3 IN4 IN5 IN6 SGND1 CP1 SGND2 CP2 VDD FAULT WB PGND1 VB PGND2 UB UU VU WU CPV COSC Charge Pump Voltage Characteristics Evaluation circuit
- 8. All Rights Reserved Copyright (c) Bee Technologies Inc. 2012 8 Time 1.60ms 1.64ms 1.68ms 1.72ms 1.76ms 1.80ms 1.84ms 1.88ms 1.92ms 1.96ms V(VU) 0V 50mV 100mV 150mV 200mV SEL>> V(UU) 12V 16V 20V 24V 28V 32V High-Side Output Voltage Characteristics Circuit Simulation Result Simulation result Condition: CP1 = CP2 = 0.1F, ROSC = 62k, COSC = 270pF Parameter Condition Unit Measurement Simulation %Error VOH(H) VDD = 7V, VIN = 5V, IO = -10mA V 16.9 (VDD+9.9) 17.4 2.96 VDD = 13.5V, VIN = 5V, IO = -10mA V 25.5 (VDD+12) 25.7 0.78 VDD = 18V, VIN = 5V, IO = -10mA V 30 (VDD+12) 30.1 0.33 VDROP VIN = 5V, IO = -10mA, VDROP=VCPV-VOH V 2 2.07 3.5 VOL(H) VDD = 7 to 18 V, VIN = 0V, IO = 0mA V 0.1 0.1 0 VOH(H), VDD=7V VDD=13.5V VDD=18V VOL(H), VDD=7 – 18 V
- 9. All Rights Reserved Copyright (c) Bee Technologies Inc. 2012 9 CPV2 DCP D2 WU C2 0.1u UU VU COSCCOSC UB VB WB 0 ENB 00 00 IN1 0 ENB IN2 0 IN3 IN5IN4 IN6 IN1 IN3 IN2 IN5 IN4 IN6 FAULT RFLT 13.5k VDD 7 VDD Rosc 62k 0 0 VDD C3 10u IC = 18.625 0 Cosc 270p DCP D3 C1 0.1u DCP D1 0 VIN1 5V VIN2 0V VIN3 0V VIN4 0V VIN5 0V VIN6 0V VENB 5V IO -10mA CPV 0 ROSC CP1 CP2 U1 TPD7210F ENB ROSC IN1 IN2 IN3 IN4 IN5 IN6 SGND1 CP1 SGND2 CP2 VDD FAULT WB PGND1 VB PGND2 UB UU VU WU CPV COSC High-Side Output Voltage Characteristics Evaluation circuit
- 10. All Rights Reserved Copyright (c) Bee Technologies Inc. 2012 10 Time 0s 40us 80us 120us 160us 200us 240us 280us 320us 360us V(VB) 0V 50mV 100mV 150mV 200mV SEL>> V(UB) 0V 5V 10V 15V 20V Low-Side Output Voltage Characteristics Circuit Simulation Result Simulation result Condition: CP1 = CP2 = 0.1F, ROSC = 62k, COSC = 270pF Parameter Condition Unit Measurement Simulation %Error VOH(L) VDD = 7V, VIN = 5V, IO = -10mA V 6.9 (VDD-0.1) 6.93 0.43 VDD = 13.5V, VIN = 5V, IO = -10mA V 13.4 (VDD-0.1) 13.43 0.22 VDD = 18V, VIN = 5V, IO = -10mA V 17.9 (VDD-0.1) 17.93 0.17 VOL(L) VDD = 7 to 18 V, VIN = 0V, IO = 0mA V 0.1 0.1 0 VOH(L), VDD=7V VDD=13.5V VDD=18V VOL(L), VDD=7 – 18 V
- 11. All Rights Reserved Copyright (c) Bee Technologies Inc. 2012 11 U1 TPD7210F ENB ROSC IN1 IN2 IN3 IN4 IN5 IN6 SGND1 CP1 SGND2 CP2 VDD FAULT WB PGND1 VB PGND2 UB UU VU WU CPV COSC CP2 CP1 ROSC CPV2 DCP D2 WU C2 0.1u VU UU COSCCOSC UB VB WB 0 ENB 00 00 IN1 0 ENB IN2 0 IN3 IN5IN4 IN6 IN2 IN1 IN4 IN3 IN5 FAULT IN6 RFLT 13.5k VDD 7 VDD Rosc 62k 0 0 VDD C3 10u IC = 18.625 0 Cosc 270p DCP D3 C1 0.1u DCP D1 0 VIN1 0V VIN2 0V VIN3 0V VIN4 5V VIN5 0V VIN6 0V VENB 5V CPV IO -10mA 0 Low-Side Output Voltage Characteristics Evaluation circuit
- 12. All Rights Reserved Copyright (c) Bee Technologies Inc. 2012 12 0 HUB BO I SS DD B UB HVB BO I SS DD B VB VDD 13.5 VDD VDD 1 0 0 V1 1 1 IO 0Adc 0 F1 F GAIN = -1 0 *Evaluation is made from the Sub-circuit inside the IC model I_IO 100mA 1.0A50mA (V(VB)-0.1)/ I(IO) 4.0 4.5 5.0 -I_IO -100mA-50mA -1.0A (13.43-V(UB))/I(IO) 4.0 6.0 7.0 8.0 SEL>> Output ON Resistance Characteristics Circuit Simulation Result Evaluation circuit Simulation result Parameter Condition Unit Measurement Simulation %Error RSOURCE VDD = 13.5 V, VIN = 5 V, IO = -0.5 A 7 6.857 -2.04 RSINK VDD = 13.5 V, VIN = 0 V, IO = -0.5 A 4.5 4.499 -0.02
- 13. All Rights Reserved Copyright (c) Bee Technologies Inc. 2012 13 V1 T1 = 0 V1 = 0 T2 = 1 V2 = 30 T3 = 2 V3 = 0 UVLO 0 Vsgnd 0 VDD H1 UVD UVDSGND VDD OPR OPR *Evaluation is made from the Sub-circuit inside the IC model V(VDD) 0V 2V 4V 6V 8V 10V 12V V(UVLO) -0.5V 0V 0.5V 1.0V 1.5V Under Voltage Detection Characteristics Circuit Simulation Result Evaluation circuit Simulation result Parameter Condition Unit Measurement Simulation %Error VDDUV V 5.5 5.5 0 VDDUV 0.5 0.5 0
- 14. All Rights Reserved Copyright (c) Bee Technologies Inc. 2012 14 Time 0s 2us 4us 6us 8us 10us V(UU) 5V 10V -2V 14V SEL>> V(IN1) 0V 2.0V 4.0V 5.5V Switching Time Characteristics Circuit Simulation Result Simulation result Parameter Condition Unit Measurement Simulation %Error td (ON) VDD = 13.5V, VCPV = 13.5V, COUT = 12400 pF, RG = 47 s 0.25 0.251 0.4 tON 0.5 0.504 0.8 td (OFF) 0.25 0.250 0 tOFF 0.5 0.495 -1.0 tdead VDD = 13 V, tdead = tOFF-td(on) s 0.25 0.244 -2.4 50% VIN VOUT (VDD-3)90% (VDD-3)10% td(ON) tON td(OFF) tOFF
- 15. All Rights Reserved Copyright (c) Bee Technologies Inc. 2012 15 CPV2 DCP D2 C2 0.1u VU WU UU COSCCOSC UB VB WB ENB 0 IN1 FAULT RFLT 13.5k VDD 13.5 VDD Rosc 62k 0 VDD RG1 47 VIN1 TD = 2.45u TF = 100n PW = 4.9u PER = 1 V1 = 0 TR = 100n V2 = 5 Ciss1 12400p 0 C3 2.2u 0 Cosc 270p DCP D3 C1 0.1u DCP D1 0 ENB VENB 5V CPVROSC CP1 CP2 U1 TPD7210F ENB ROSC IN1 IN2 IN3 IN4 IN5 IN6 SGND1 CP1 SGND2 CP2 VDD FAULT WB PGND1 VB PGND2 UB UU VU WU CPV COSC Switching Time Characteristics Evaluation circuit
- 16. All Rights Reserved Copyright (c) Bee Technologies Inc. 2012 16 0 H2 OSC 5V7 SGNDCOSC CLKROSC osc ROSC COSC 5V7 Rosc 62k Cosc 270p *Evaluation is made from the Sub-circuit inside the IC model Time 0s 10us 20us 30us 40us 50us 60us 70us 80us 90us v(osc) 0V 0.5V 1.0V V(ROSC) V(COSC) 0V 0.5V 1.0V 1.5V 2.0V SEL>> Oscillating Frequency Characteristics Circuit Simulation Result Evaluation circuit Simulation result Parameter Condition Unit Measurement Simulation %Error fOSC VDD = 7-18V, ROSC = 62 k, COSC = 270 pF kHz 100 99.82 -0.18 V ROSC pin V COSC pin OSC clock (inside the IC)
- 17. All Rights Reserved Copyright (c) Bee Technologies Inc. 2012 17 H1 FLT S D I SGND 0 RFLT 18k VFLT_IN TD = 1.45u TF = 100n PW = 4.9u PER = 1 V1 = 0 TR = 100n V2 = 1 V V VDD FAULT *Evaluation is made from the Sub-circuit inside the IC model Time 5.6us 6.0us 6.4us 6.8us 7.2us 7.6us 8.0us 8.4us 8.8us 9.2us -I(RFLT) 1.0uA 10uA 100uA 1.0mA V(FAULT) 0V 10V 20V V(VFLT_IN:+) 0.5V 1.0V SEL>> FAULT Output Characteristics Circuit Simulation Result Evaluation circuit Simulation result Parameter Condition Unit Measurement Simulation %Error IFAULT, Max. mA 5 5.01 0.2 VFAULT VDD = 7-18V, IFAULT = 1mA V 0.8 0.799 -0.13 IFAULT, Leakage VDD = 7-18V, VFAULT = 18V A 10 9.637 -3.63 td(FAULT) s 1[Max.] 0.5 IFAULT, Leakage td(ON)
- 18. All Rights Reserved Copyright (c) Bee Technologies Inc. 2012 18 Time 0s 5us 15us 25us 35us 45us 55us 65us 75us 1 V(UB) 2 V(VB) 3 V(WB) -15V 0V 15V -38V 1 SEL>> -15V 0V 15V 30V 2 0V 15V 30V 45V 3 SEL>> 1 V(UU) 2 V(VU) 3 V(WU) -15V 0V 15V -38V 1 >> -15V 0V 15V 30V 2 0V 15V 30V 45V 3 DSTM1:PIN1 DSTM2:PIN1 DSTM3:PIN1 DSTM4:PIN1 DSTM5:PIN1 DSTM6:PIN1 Truth Table (1/5) Circuit Simulation Result IN1 IN2 IN3 IN4 IN5 IN6 1 L L L L L L 2 H L L L L L 3 L H L L L L 4 L L H L L L 5 L L L H L L 6 L L L L H L 7 L H L L L H 8 H L L H L L 9 H L L L H L 10 H L L L L H 11 L H L H L L 12 L H L L H L 13 L H L L L H 14 L L H H L L 15 L L H L H L 16 L L H L L H 1 L L L L L L 2 H L L L L L 3 L H L L L L 4 L L H L L L 5 L L L H L L 6 L L L L H L 7 L H L L L H 8 L L L L L L 9 H L L L H L 10 H L L L L H 11 L H L H L L 12 L L L L L L 13 L H L L L H 14 L L H H L L 15 L L H L H L 16 L L L L L L Mode # Mode #
- 19. All Rights Reserved Copyright (c) Bee Technologies Inc. 2012 19 Time 0s 5us 15us 25us 35us 45us 55us 65us 75us 1 V(UB) 2 V(VB) 3 V(WB) -15V 0V 15V -38V 1 SEL>> -15V 0V 15V 30V 2 0V 15V 30V 45V 3 SEL>> 1 V(UU) 2 V(VU) 3 V(WU) -15V 0V 15V -38V 1 >> -15V 0V 15V 30V 2 0V 15V 30V 45V 3 DSTM1:PIN1 DSTM2:PIN1 DSTM3:PIN1 DSTM4:PIN1 DSTM5:PIN1 DSTM6:PIN1 Truth Table (2/5) Circuit Simulation Result IN1 IN2 IN3 IN4 IN5 IN6 17 H H L L L L 18 L H H L L L 19 H L H L L L 20 L L L H H L 21 L L L L H H 22 L L L H L H 23 H H L H L L 24 H H L L H L 25 H H L L L H 26 L H H H L L 27 L H H L H L 28 L H H L L H 29 H L H H L L 30 H L H L H L 31 H L H L L H 32 H L L H H L 17 H H L L L L 18 L H H L L L 19 H L H L L L 20 L L L H H L 21 L L L L H H 22 L L L H L H 23 L L L L L L 25 H H L L L H 27 L L L L L L 28 L L L L L L 29 L L L L L L 31 L L L L L L 32 L L L L L L Mode # Mode # 24 L L L L L L 26 L H H H L L 30 H L H L H L
- 20. All Rights Reserved Copyright (c) Bee Technologies Inc. 2012 20 Time 0s 5us 15us 25us 35us 45us 55us 65us 75us 1 V(UB) 2 V(VB) 3 V(WB) -15V 0V 15V -38V 1 >> -15V 0V 15V 30V 2 0V 15V 30V 45V 3 1 V(UU) 2 V(VU) 3 V(WU) -15V 0V 15V -38V 1 SEL>> -15V 0V 15V 30V 2 0V 15V 30V 45V 3 SEL>> DSTM1:PIN1 DSTM2:PIN1 DSTM3:PIN1 DSTM4:PIN1 DSTM5:PIN1 DSTM6:PIN1 Truth Table (3/5) Circuit Simulation Result IN1 IN2 IN3 IN4 IN5 IN6 33 H L L L H H 34 H L L H L H 35 L H L H H L 36 L H L L H H 37 L H L H L H 38 L L L H H L 39 L L H L H H 40 L L H H L H 41 H H H L L L 42 L L L H H H 43 H H L H H L 44 H H L L H H 45 H H L H L H 46 L H H H H L 47 L H H L H H 48 L H H H L H 33 H L L L H H 34 L L L L L L 35 L L L L L L 36 L L L L L L 37 L H L H L H 38 L L H H H L 39 L L L L L L 40 L L L L L L 41 H H H L L L 42 L L L H H H 43 L L L L L L 44 L L L L L L 45 L L L L L L 46 L L L L L L 47 L L L L L L 48 L L L L L L Mode # Mode #
- 21. All Rights Reserved Copyright (c) Bee Technologies Inc. 2012 21 Time 0s 5us 15us 25us 35us 45us 55us 65us 75us 1 V(UB) 2 V(VB) 3 V(WB) -30V -15V 0V 15V1 0V 15V 30V -20V 2 >> 0V 15V 30V 45V 3 1 V(UU) 2 V(VU) 3 V(WU) -15V 0V 15V -38V 1 SEL>> -15V 0V 15V 30V 2 0V 15V 30V 45V 3 SEL>> DSTM1:PIN1 DSTM2:PIN1 DSTM3:PIN1 DSTM4:PIN1 DSTM5:PIN1 DSTM6:PIN1 Truth Table (4/5) Circuit Simulation Result IN1 IN2 IN3 IN4 IN5 IN6 49 H L H H H L 50 H L H L H H 51 H L L H L H 52 H H H H L L 53 H H H L H L 54 H H H L L H 55 H L L H H H 56 L H L H H H 57 L L H H H H 58 H H H H H L 59 H H H L H H 60 H H H H L H 61 H H L H H H 62 L H H H H H 63 H L H H H H 64 H H H H H H 49 L L L L L L 50 L L L L L L 51 L L L L L L 52 L L L L L L 53 L L L L L L 54 L L L L L L 55 L L L L L L 56 L L L L L L 57 L L L L L L 58 L L L L L L 59 L L L L L L 60 L L L L L L 61 L L L L L L 62 L L L L L L 63 L L L L L L 64 L L L L L L Mode # Mode #
- 22. All Rights Reserved Copyright (c) Bee Technologies Inc. 2012 22 UI4 BUF 1 2 UI5 BUF 1 2 CPV2 UI6 BUF 1 2 IN2 IN3 IN5 C3 2.2u DCP D3 IN6 F1 DSTM1 IN1 UI1 BUF 1 2 IN4 RG4 47 Ciss4 12400p RG2 47 Ciss2 12400p RG3 47 Ciss3 12400p RG5 47 Ciss5 12400p RG6 47 Ciss6 12400p VDD DCP D2 C2 0.1u WU VU UU COSCCOSC UB WB VB 0 ENB IN1 FAULT RFLT 13.5k VDD 13.5 VDD Rosc 62k 0 RG1 47 Ciss1 12400p 0 Cosc 270p C1 0.1u DCP D1 F1 DSTM2 IN2 0 ENB VENB 5V ROSC F1 DSTM3 IN3 CP2 CP1 F1 DSTM4 IN4 U1 TPD7210F ENB ROSC IN1 IN2 IN3 IN4 IN5 IN6 SGND1 CP1 SGND2 CP2 VDD FAULT WB PGND1 VB PGND2 UB UU VU WU CPV COSC F1 DSTM5 IN5 F1 DSTM6 IN6 UI2 BUF 1 2 UI3 BUF 1 2 Truth Table (5/5) Evaluation circuit