This document provides a summary of simulation results that characterize the performance of the TA7291P bridge driver IC from Toshiba. It includes 14 pages detailing the IC's components, evaluation circuits, simulation conditions, and measurements for parameters like supply current, input characteristics, saturation voltages, output voltages, diode forward voltages, junction capacitances, and diode reverse recovery time.

1. All Rights Reserved Copyright (c) Bee Technologies Inc. 2012
1
Device Modeling Report
Bee Technologies Inc.
COMPONENTS: BRIDGE DRIVER IC
PART NUMBER: TA7291P
MANUFACTURER: TOSHIBA

2. All Rights Reserved Copyright (c) Bee Technologies Inc. 2012
2
Time
0s 2.5us 5.0us 7.5us 10.0us 12.5us 15.0us 17.5us
I(R1)
-400mA
0A
400mA
V(OUT2)
-2V
14V
SEL>>
V(OUT1)
0V
10V
V(IN2)
0V
2.5V
5.0V
V(IN1)
0V
2.5V
5.0V
VREF
10V
IN2
OUT1
0
VIN1
TD = 4.99u
TF = 10n
PW = 4.99u
PER = 10u
V1 = 0
TR = 10n
V2 = 5 R1
40
IN1
0
VIN2
TD = 9.99u
TF = 10n
PW = 9.99u
PER = 20u
V1 = 0
TR = 10n
V2 = 5
OUT2
VCC
12V
U1
TA7291P
GND
OUT1
VREF
IN1
IN2
VCC VS
OUT2
0
00
0
VS
18V
Function
Circuit Simulation Result
Evaluation circuit
IN1 IN2 OUT1 OUT2 MODE
0 0   STOP
1 0 H L CW / CCW
0 1 L H CCW / CW
1 1 L L BRAKE
IN1
IN2
OUT1
OUT2
MODE
0
0


STOP
1
0
H
L
CW
0
1
L
H
CCW
1
1
L
L
BRAKE

3. All Rights Reserved Copyright (c) Bee Technologies Inc. 2012
3
0
IN2
0
OUT2
VIN1
TD = 0.5m
TF = 10n
PW = 0.5m
PER = 1m
V1 = 0
TR = 10n
V2 = 5
0
VIN2
TD = 1m
TF = 10n
PW = 1m
PER = 2m
V1 = 0
TR = 10n
V2 = 5
OUT1
0
VS
18V
VCC
12V
0
CC
IN1
U1
TA7291P
GND
OUT1
VREF
IN1
IN2
VCC VS
OUT2
Time
0s 0.25ms 0.50ms 0.75ms 1.00ms 1.25ms 1.50ms 1.75ms 2.00ms
I(CC)
0A
5mA
10mA
SEL>>
V(IN2)
-2.0V
0V
2.0V
4.0V
6.0V
V(IN1)
-2.0V
0V
2.0V
4.0V
6.0V
Supply Current Characteristics
Circuit Simulation Result
Evaluation circuit
Simulation result
Condition: Output OFF
Parameter
Condition Unit Measurement Simulation %Error
ICC1 CW / CCW Mode mA 8.0 8.000 0
ICC2 Stop Mode A 0 0 0
ICC3 Brake Mode mA 6.5 6.500 0
IN1
IN2
ICC ICC2, Stop mode ICC1, CW/CCW mode ICC2, Brake mode
0
0
1
0
0
1
1
1

4. All Rights Reserved Copyright (c) Bee Technologies Inc. 2012
4
U1
TA7291P
GND
OUT1
VREF
IN1
IN2
VCC VS
OUT2
0
IN2
0
OUT2
VIN1
TD = 0
TF = 25m
PW = 25m
PER = 1
V1 = 3.5
TR = 25m
V2 = 0
0
OUT1
0
VS
18V
ref
Vref
10V
0
VIN2
TD = 100m
TF = 25m
PW = 25m
PER = 1
V1 = 3.5
TR = 25m
V2 = 0
IN1
VCC
12
0
Time
0s 50ms 100ms 150ms 200ms
I(ref)
0A
20uA
40uA
V(IN2)
0V 0.5V 1.0V 1.5V 2.0V 2.5V 3.0V 3.5V
V(OUT1)
0V
10V
SEL>>
V(IN1)
0V 0.5V 1.0V 1.5V 2.0V 2.5V 3.0V 3.5V
V(OUT2)
0V
5V
10V
Input Characteristics
Circuit Simulation Result
Evaluation circuit
Simulation result
Parameter
Condition Unit Measurement Simulation %Error
VIN1 (High)
V
> 3.5 2.5 -
VIN2 (Low) < 0.8 <1.8 -
IIN VIN=3.5V uA 3.0 3.0 0
VT V 0.7 0.7 0
Iref Vref=10V A 20 20 0
VOUT2
VOUT1
Iref
VT

5. All Rights Reserved Copyright (c) Bee Technologies Inc. 2012
5
VS
IN1
VCC
12
0
VIN2
0
VIN1
3.5
VS
18
0
OUT1
IO
0
U1
TA7291P
GND
OUT1
VREF
IN1
IN2
VCC VS
OUT2
0
IN2
0
OUT2
0
I_IO
0A 0.4A 0.8A 1.2A 1.6A 2.0A
V(VS,OUT1)
0V
0.8V
1.6V
2.4V
3.2V
Upper Side Saturation Voltage Characteristics
Circuit Simulation Result
Evaluation circuit
Simulation result
Condition: Vref = VS, VS-VOUT Measure, CW / CCW mode
Parameter
Condition Unit Measurement Simulation %Error
VSAT U-1 IO = 0.2A V 0.9 0.904 0.44
VSAT U-2 IO = 0.4A V 1.0 0.998 -0.20
VSAT U-3 IO = 1.0A V 1.3 1.300 0

6. All Rights Reserved Copyright (c) Bee Technologies Inc. 2012
6
VS
IN1
VCC
12
0
VIN2
0
VIN1
3.5
VS
18
00
IO
U1
TA7291P
GND
OUT1
VREF
IN1
IN2
VCC VS
OUT2
0
IN2
OUT2
0 0
OUT1
I_IO
0A 0.4A 0.8A 1.2A 1.6A 2.0A
V(OUT2)
0V
0.8V
1.6V
2.4V
3.2V
Lower Side Saturation Voltage Characteristics
Circuit Simulation Result
Evaluation circuit
Simulation result
Condition: Vref = VS, VOUT-GND Measure, CW / CCW mode
Parameter
Condition Unit Measurement Simulation %Error
VSAT L-1 IO = 0.2A
V
0.8 0.795 -0.63
VSAT L-2 IO = 0.4A 0.9 0.902 0.22
VSAT L-3 IO = 1.0A 1.2 1.200 0

7. All Rights Reserved Copyright (c) Bee Technologies Inc. 2012
7
IN1
VCC
5
0
VIN2
0
VIN1
3.5
VS
12
0
OUT1
0
IN2
VREF
OUT2
0 0
VS
VREF
10
0
IO
0
U1
TA7291P
GND
OUT1
VREF
IN1
IN2
VCC VS
OUT2
V_VREF
0V 2V 4V 6V 8V 10V 12V
V(OUT1)
0V
2V
4V
6V
8V
10V
12V
Output Voltage (Upper Side) Characteristics
Circuit Simulation Result
Evaluation circuit
Simulation result
Condition: Vref = 10V, VOUT-GND Measure, CW / CCW mode
Parameter
Condition Unit Measurement Simulation %Error
VOUT U-1 IO = 0.5A V 11 10.762 -2.16
VOUT U-2 IO = 1.0A V 10.7 10.7 0
IO=0.5A
IO=1.0A

8. All Rights Reserved Copyright (c) Bee Technologies Inc. 2012
8
IN1
VCC
5
0
VIN2
0
VIN1
3.5
VS
12
00
IN2
VREF
OUT2
0 0
VS
VREF
10
0
U1
TA7291P
GND
OUT1
VREF
IN1
IN2
VCC VS
OUT2
OUT1
V_VREF
0V 2V 4V 6V 8V 10V 12V
V(OUT1)
0V
2V
4V
6V
8V
10V
12V
Vref  VOUT(H) Characteristics
Circuit Simulation Result
Evaluation circuit
Simulation result
Condition: VS = 12V VCC = 5V, Open load, CW / CCW mode
Parameter
Condition Unit Measurement Simulation %Error
VOUT(H)-1 Vref = 1V
V
2.47 2.484 0.57
V OUT(H)-2 Vref = 2V 3.44 3.451 0.32
V OUT(H)-3 Vref = 5V 6.375 6.378 0.05
V OUT(H)-3 Vref = 10V 11.275 11.237 -0.34

9. All Rights Reserved Copyright (c) Bee Technologies Inc. 2012
9
0
OUT2
OUT1
VS
GND
0
U1
TA7291P
GND
OUT1
VREF
IN1
IN2
VCC VS
OUT2
IF
I_IF
0.2A 0.4A 0.6A 0.8A 1.0A0.0A
V(OUT1,VS)
0V
0.5V
1.0V
1.5V
2.0V
2.5V
Upper Side Diode Forward Voltage Characteristics
Circuit Simulation Result
Evaluation circuit
Simulation result
Parameter
Condition Unit Measurement Simulation %Error
VF U-1 IF = 0.2A V 1.182 1.185 0.25
VF U-2 IF = 0.5A V 1.652 1.650 -0.12
VF U-3 IF = 1.0A V 2.365 2.366 0.04

10. All Rights Reserved Copyright (c) Bee Technologies Inc. 2012
10
0
OUT2
OUT1
VS
IF
GND
0
U1
TA7291P
GND
OUT1
VREF
IN1
IN2
VCC VS
OUT2
I_IF
0.2A 0.4A 0.6A 0.8A 1.0A0.0A
V(GND,OUT2)
0V
0.5V
1.0V
1.5V
2.0V
2.5V
Lower Side Diode Forward Voltage Characteristics
Circuit Simulation Result
Evaluation circuit
Simulation result
Parameter
Condition Unit Measurement Simulation %Error
VF L-1 IF = 0.2A V 0.92 0.919 -0.11
VF L-2 IF = 0.5A V 1.05 1.049 -0.10
VF L-3 IF = 1.0A V 1.216 1.217 0.08

11. All Rights Reserved Copyright (c) Bee Technologies Inc. 2012
11
0 0
VS
U1
TA7291P
GND
OUT1
VREF
IN1
IN2
VCC VS
OUT2
OUT2
VR
V2 = 20
T2 = 1u
V1 = 0
T1 = 0
0
V(VS)
5V 10V 15V 20V1V
-I(U1:OUT1)/(20/1u)
0A
50pA
100pA
Upper Side Diode Junction Capacitance Characteristics
Circuit Simulation Result
Evaluation circuit
Simulation result
Parameter
Condition Unit Measurement Simulation %Error
CJ U-1 VSVOUT = 1V
pF
62.700 62.07 -1.00
CJ U-2 VSVOUT = 2V 58.400 57.267 -1.94
CJ U-3 VSVOUT = 5V 51.500 51.77 0.52
CJ U-4 VSVOUT = 10V 46.200 48.501 4.98

12. All Rights Reserved Copyright (c) Bee Technologies Inc. 2012
12
0 0
OUT2
VR
V2 = 20
T2 = 1u
V1 = 0
T1 = 0
0
VS
U1
TA7291P
GND
OUT1
VREF
IN1
IN2
VCC VS
OUT2
V(OUT2)
5V 10V 15V 20V1V
(IC(X_U1.X_UL2.Q_QL)-I(X_U1.X_UL2.D_DL))/(20/1u)
0A
50pA
100pA
*This capacitance current is plotted from inside the IC model.
Lower Side Diode Junction Capacitance Characteristics
Circuit Simulation Result
Evaluation circuit
Simulation result
Parameter
Condition Unit Measurement Simulation %Error
CJ L-1 VSVOUT = 1V
pF
71.400 71.821 0.59
CJ L-2 VSVOUT = 2V 63.500 63.238 -0.41
CJ L-3 VSVOUT = 5V 53.000 52.637 -0.68
CJ L-4 VSVOUT = 10V 46.400 45.833 -1.22

13. All Rights Reserved Copyright (c) Bee Technologies Inc. 2012
13
0
0
U1
TA7291P
GND
OUT1
VREF
IN1
IN2
VCC VS
OUT2
R1
50
VR1
V2 = 11.2T2 = 10u
V1 = 11.2T1 = 0
T3 = 10.01u V3 = -9.3
Time
8.8us 9.2us 9.6us 10.0us 10.4us 10.8us 11.2us 11.6us 12.0us 12.4us
I(R1)
-400mA
-300mA
-200mA
-100mA
-0mA
100mA
200mA
300mA
400mA
Upper Side Diode Reverse Recovery Time Characteristics
Circuit Simulation Result
Evaluation circuit
Simulation result
Parameter
Condition Unit Measurement Simulation %Error
trj IF = IR = 200mA ns 240 240.662 0.28

14. All Rights Reserved Copyright (c) Bee Technologies Inc. 2012
14
0
0
R1
50
VR1
V2 = 11.2T2 = 10u
V1 = 11.2T1 = 0
T3 = 10.01u V3 = -9.3
U1
TA7291P
GND
OUT1
VREF
IN1
IN2
VCC VS
OUT2
Time
8.8us 9.2us 9.6us 10.0us 10.4us 10.8us 11.2us 11.6us 12.0us 12.4us
I(R1)
-400mA
-300mA
-200mA
-100mA
-0mA
100mA
200mA
300mA
400mA
Lower Side Diode Reverse Recovery Time Characteristics
Circuit Simulation Result
Evaluation circuit
Simulation result
Parameter Condition Unit Measurement Simulation %Error
trj IF = IR = 200mA ns 360 359 -0.28

15. All Rights Reserved Copyright (c) Bee Technologies Inc. 2012
15
Time
0s 0.4s 0.8s 1.2s 1.6s 2.0s 2.4s 2.8s 3.2s 3.6s 4.0s 4.4s 4.8s 5.2s 5.6s 6.0s 6.4s 6.8s 7.2s 7.6s
1 I(MT) 2 V(OUT1,OUT2)
-2.0A
-1.5A
-1.0A
-0.5A
0A
0.5A
1.0A
1.5A
2.0A
1
>>
-2.0V
-1.5V
-1.0V
-0.5V
0V
0.5V
1.0V
1.5V
2.0V
2
MT
U1
TA7291P
GND
OUT1
VREF
IN1
IN2
VCC VS
OUT2
+
- U2
FA-130
IL = 0.15
VR1-2
VR2-2
00
VREF VS
R1
0.5
IN2
OUT1
0
VIN1
TD = 0.4
TF = 10n
PW = 4
PER = 6
V1 = 0
TR = 10n
V2 = 3.5
IN1
0
VIN2
TD = 2.4
TF = 10n
PW = 8
PER = 16
V1 = 0
TR = 10n
V2 = 3.5
OUT2
VCC
5V
0
0
VS
4.5V
Application Circuit Simulation
Circuit Simulation Result
Evaluation circuit
IN1 IN2 OUT1 OUT2 MODE
0 0   STOP
1 0 H L CW / CCW
0 1 L H CCW / CW
1 1 L L BRAKE
Voltage
CW: IN1=1, IN2=0
Current
BRAKE: IN1=1, IN2=1
CCW: IN1=0, IN2=1
BRAKE:
IN1=1, IN2=1

16. All Rights Reserved Copyright (c) Bee Technologies Inc. 2012
16
Application Circuit Simulation
Measurement Waveform
Voltage
CW: IN1=1, IN2=0
Current
BRAKE: IN1=1, IN2=1
CCW: IN1=0, IN2=1 BRAKE: IN1=1, IN2=1