The document provides a device modeling report for a Toshiba TA7291P bridge driver IC. It includes: - Component and part number details - Circuit simulations and evaluation circuits showing the IC's operation under different input and output conditions - Simulation results analyzing key parameters like supply current, input characteristics, saturation voltages, and diode characteristics. The report concludes with 11 sections summarizing the IC's electrical behavior and performance based on circuit simulations, with tables comparing simulated and measured values.

1. Device Modeling Report
COMPONENTS: BRIDGE DRIVER IC
PART NUMBER: TA7291P
MANUFACTURER: TOSHIBA
Bee Technologies Inc.
All Rights Reserved Copyright (c) Bee Technologies Inc. 2012
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2. Function
Circuit Simulation Result
5.0V
IN1 2.5V 0 1 0 1
0V
V(IN1)
5.0V
IN2 2.5V 0 0 1 1
0V
V(IN2)
10V
OUT1  H L L
0V
V(OUT1)
14V
OUT2 SEL>>  L H L
-2V
V(OUT2)
400mA
STOP BRAKE
MODE 0A CW CCW
-400mA
0s 2.5us 5.0us 7.5us 10.0us 12.5us 15.0us 17.5us
I(R1)
Time
Evaluation circuit
VCC VREF
12V 10V
0 0
IN1 VCC VREF VS OUT1
VIN1
IN1 OUT1 VS
V1 = 0
V2 = 5 R1 18V
TD = 4.99u VIN2 IN2 OUT2 40
TR = 10n IN2 OUT2
V1 = 0 GND
TF = 10n V2 = 5
PW = 4.99u TD = 9.99u U1
PER = 10u TR = 10n TA7291P
TF = 10n
PW = 9.99u
PER = 20u
0 0 0 0
IN1 IN2 OUT1 OUT2 MODE
0 0   STOP
1 0 H L CW / CCW
0 1 L H CCW / CW
1 1 L L BRAKE
All Rights Reserved Copyright (c) Bee Technologies Inc. 2012
2

3. Supply Current Characteristics
Circuit Simulation Result
6.0V
4.0V
IN1 0 1 0 1
2.0V
0V
-2.0V
V(IN1)
6.0V
4.0V
IN2 0 1
2.0V 0 1
0V
-2.0V
V(IN2)
10mA
ICC 5mA ICC2, Stop mode ICC1, CW/CCW mode ICC2, Brake mode
SEL>>
0A
0s 0.25ms 0.50ms 0.75ms 1.00ms 1.25ms 1.50ms 1.75ms 2.00ms
I(CC)
Time
Evaluation circuit
VS
18V
OUT1 CC
IN1 VCC VREF VS
VIN1 IN1 OUT1
V1 = 0
V2 = 5 IN2 VCC
TD = 0.5m VIN2 IN2 OUT2 OUT2
GND 12V
TR = 10n V1 = 0
TF = 10n V2 = 5 U1
PW = 0.5m TD = 1m TA7291P
PER = 1m TR = 10n
TF = 10n
PW = 1m
PER = 2m
0 0 0 0 0
Simulation result
Condition: Output OFF
Condition Unit Measurement Simulation %Error
Parameter
ICC1 CW / CCW Mode mA 8.0 8.000 0
ICC2 Stop Mode A 0 0 0
ICC3 Brake Mode mA 6.5 6.500 0
All Rights Reserved Copyright (c) Bee Technologies Inc. 2012
3

4. Input Characteristics
Circuit Simulation Result
10V
VOUT2 5V
0V
0V 0.5V 1.0V 1.5V 2.0V 2.5V 3.0V 3.5V
V(OUT2)
V(IN1)
10V
VOUT1
SEL>>
0V
0V 0.5V 1.0V 1.5V 2.0V 2.5V 3.0V 3.5V
V(OUT1)
VT
V(IN2)
40uA
Iref 20uA
0A
0s 50ms 100ms 150ms 200ms
I(ref)
Time
Evaluation circuit
VCC VS
18V
12 OUT1 ref
IN1 VCC VREF VS
VIN1 IN1 OUT1
V1 = 3.5
V2 = 0 VIN2 IN2 Vref
TD = 0 IN2 OUT2 OUT2
V1 = 3.5 GND 10V
TR = 25m V2 = 0
TF = 25m TD = 100m U1
PW = 25m TR = 25m TA7291P
PER = 1 TF = 25m
PW = 25m
PER = 1
0 0 0 0 0 0
Simulation result
Condition Unit Measurement Simulation %Error
Parameter
VIN1 (High) > 3.5 2.5 -
V
VIN2 (Low) < 0.8 <1.8 -
IIN VIN=3.5V uA 3.0 3.0 0
VT V 0.7 0.7 0
Iref Vref=10V A 20 20 0
All Rights Reserved Copyright (c) Bee Technologies Inc. 2012
4

5. Upper Side Saturation Voltage Characteristics
Circuit Simulation Result
3.2V
2.4V
1.6V
0.8V
0V
0A 0.4A 0.8A 1.2A 1.6A 2.0A
V(VS,OUT1)
I_IO
Evaluation circuit
VS
VCC
12 OUT1
IN1 VCC VREF VS
IN1 OUT1 VS
VIN1 18
IN2
3.5 IN2 OUT2 OUT2
VIN2 GND
U1
0 TA7291P
IO
0 0 0 0 0 0
Simulation result
Condition: Vref = VS, VS-VOUT Measure, CW / CCW mode
Condition Unit Measurement Simulation %Error
Parameter
VSAT U-1 IO = 0.2A V 0.9 0.904 0.44
VSAT U-2 IO = 0.4A V 1.0 0.998 -0.20
VSAT U-3 IO = 1.0A V 1.3 1.300 0
All Rights Reserved Copyright (c) Bee Technologies Inc. 2012
5

6. Lower Side Saturation Voltage Characteristics
Circuit Simulation Result
3.2V
2.4V
1.6V
0.8V
0V
0A 0.4A 0.8A 1.2A 1.6A 2.0A
V(OUT2)
I_IO
Evaluation circuit
VS
VCC
12 OUT1
IN1 VCC VREF VS
IN1 OUT1 VS
VIN1 18
IN2
3.5 IN2 OUT2 OUT2
VIN2 GND
U1
0 TA7291P IO
0 0 0 0 0 0
Simulation result
Condition: Vref = VS, VOUT-GND Measure, CW / CCW mode
Condition Unit Measurement Simulation %Error
Parameter
VSAT L-1 IO = 0.2A 0.8 0.795 -0.63
VSAT L-2 IO = 0.4A V 0.9 0.902 0.22
VSAT L-3 IO = 1.0A 1.2 1.200 0
All Rights Reserved Copyright (c) Bee Technologies Inc. 2012
6

7. Output Voltage (Upper Side) Characteristics
Circuit Simulation Result
12V
IO=0.5A
IO=1.0A
10V
8V
6V
4V
2V
0V
0V 2V 4V 6V 8V 10V 12V
V(OUT1)
V_VREF
Evaluation circuit
VREF
10
0
VCC VREF VS
5 OUT1
IN1 VCC VREF VS
IN1 OUT1 VS
VIN1 12
IN2
3.5 IN2 OUT2 OUT2 IO
VIN2 GND
U1
0 TA7291P
0 0 0 0 0 0
Simulation result
Condition: Vref = 10V, VOUT-GND Measure, CW / CCW mode
Condition Unit Measurement Simulation %Error
Parameter
VOUT U-1 IO = 0.5A V 11 10.762 -2.16
VOUT U-2 IO = 1.0A V 10.7 10.7 0
All Rights Reserved Copyright (c) Bee Technologies Inc. 2012
7

8. Vref  VOUT(H) Characteristics
Circuit Simulation Result
12V
10V
8V
6V
4V
2V
0V
0V 2V 4V 6V 8V 10V 12V
V(OUT1)
V_VREF
Evaluation circuit
VREF
10
0
VCC VREF VS
5 OUT1
IN1 VCC VREF VS
IN1 OUT1 VS
VIN1 12
IN2
3.5 IN2 OUT2 OUT2
VIN2 GND
U1
0 TA7291P
0 0 0 0 0
Simulation result
Condition: VS = 12V VCC = 5V, Open load, CW / CCW mode
Condition Unit Measurement Simulation %Error
Parameter
VOUT(H)-1 Vref = 1V 2.47 2.484 0.57
V OUT(H)-2 Vref = 2V 3.44 3.451 0.32
V
V OUT(H)-3 Vref = 5V 6.375 6.378 0.05
V OUT(H)-3 Vref = 10V 11.275 11.237 -0.34
All Rights Reserved Copyright (c) Bee Technologies Inc. 2012
8

9. Upper Side Diode Forward Voltage Characteristics
Circuit Simulation Result
2.5V
2.0V
1.5V
1.0V
0.5V
0V
0.0A 0.2A 0.4A 0.6A 0.8A 1.0A
V(OUT1,VS)
I_IF
Evaluation circuit
VS
IF
VCC VREF VS OUT1
IN1 OUT1
OUT2
IN2 OUT2
GND
U1
TA7291P GND
0 0
Simulation result
Condition Unit Measurement Simulation %Error
Parameter
VF U-1 IF = 0.2A V 1.182 1.185 0.25
VF U-2 IF = 0.5A V 1.652 1.650 -0.12
VF U-3 IF = 1.0A V 2.365 2.366 0.04
All Rights Reserved Copyright (c) Bee Technologies Inc. 2012
9

10. Lower Side Diode Forward Voltage Characteristics
Circuit Simulation Result
2.5V
2.0V
1.5V
1.0V
0.5V
0V
0.0A 0.2A 0.4A 0.6A 0.8A 1.0A
V(GND,OUT2)
I_IF
Evaluation circuit
VS
VCC VREF VS OUT1
IN1 OUT1
OUT2
IN2 OUT2
GND
IF
U1
TA7291P GND
0 0
Simulation result
Condition Unit Measurement Simulation %Error
Parameter
VF L-1 IF = 0.2A V 0.92 0.919 -0.11
VF L-2 IF = 0.5A V 1.05 1.049 -0.10
VF L-3 IF = 1.0A V 1.216 1.217 0.08
All Rights Reserved Copyright (c) Bee Technologies Inc. 2012
10

11. Upper Side Diode Junction Capacitance Characteristics
Circuit Simulation Result
100pA
50pA
0A
1V 5V 10V 15V 20V
-I(U1:OUT1)/(20/1u)
V(VS)
Evaluation circuit
VS
VR
T1 = 0
VCC VREF VS
V1 = 0
IN1 OUT1 T2 = 1u
V2 = 20
OUT2 0
IN2 OUT2
GND
U1
TA7291P
0 0
Simulation result
Condition Unit Measurement Simulation %Error
Parameter
CJ U-1 VSVOUT = 1V 62.700 62.07 -1.00
CJ U-2 VSVOUT = 2V 58.400 57.267 -1.94
pF
CJ U-3 VSVOUT = 5V 51.500 51.77 0.52
CJ U-4 VSVOUT = 10V 46.200 48.501 4.98
All Rights Reserved Copyright (c) Bee Technologies Inc. 2012
11

12. Lower Side Diode Junction Capacitance Characteristics
Circuit Simulation Result
100pA
50pA
0A
1V 5V 10V 15V 20V
(IC(X_U1.X_UL2.Q_QL)-I(X_U1.X_UL2.D_DL))/(20/1u)
V(OUT2)
*This capacitance current is plotted from inside the IC model.
Evaluation circuit
VS
VCC VREF VS
IN1 OUT1
OUT2
IN2 OUT2
VR
GND
U1 T1 = 0
TA7291P V1 = 0
T2 = 1u
0 0 0 V2 = 20
Simulation result
Condition Unit Measurement Simulation %Error
Parameter
CJ L-1 VSVOUT = 1V 71.400 71.821 0.59
CJ L-2 VSVOUT = 2V 63.500 63.238 -0.41
pF
CJ L-3 VSVOUT = 5V 53.000 52.637 -0.68
CJ L-4 VSVOUT = 10V 46.400 45.833 -1.22
All Rights Reserved Copyright (c) Bee Technologies Inc. 2012
12

13. Upper Side Diode Reverse Recovery Time Characteristics
Circuit Simulation Result
400mA
300mA
200mA
100mA
-0mA
-100mA
-200mA
-300mA
-400mA
8.8us 9.2us 9.6us 10.0us 10.4us 10.8us 11.2us 11.6us 12.0us 12.4us
I(R1)
Time
Evaluation circuit
0
VR1
R1
VCC VREF VS
T1 = 0 V1 = 11.2
IN1 OUT1
T2 = 10u V2 = 11.2
50
IN2 OUT2 T3 = 10.01u V3 = -9.3
GND
U1
TA7291P
0
Simulation result
Condition Unit Measurement Simulation %Error
Parameter
trj IF = IR = 200mA ns 240 240.662 0.28
All Rights Reserved Copyright (c) Bee Technologies Inc. 2012
13

14. Lower Side Diode Reverse Recovery Time Characteristics
Circuit Simulation Result
400mA
300mA
200mA
100mA
-0mA
-100mA
-200mA
-300mA
-400mA
8.8us 9.2us 9.6us 10.0us 10.4us 10.8us 11.2us 11.6us 12.0us 12.4us
I(R1)
Time
Evaluation circuit
0
VCC VREF VS
IN1 OUT1
R1
IN2 OUT2
GND VR1
50
U1
TA7291P T1 = 0 V1 = 11.2
0 T2 = 10u V2 = 11.2
T3 = 10.01u V3 = -9.3
Simulation result
Parameter Condition Unit Measurement Simulation %Error
trj IF = IR = 200mA ns 360 359 -0.28
All Rights Reserved Copyright (c) Bee Technologies Inc. 2012
14

15. Application Circuit Simulation
Circuit Simulation Result
2.0A 2.0V
1 2
Voltage
1.5A 1.5V
1.0A 1.0V
0.5A 0.5V
Current
BRAKE:
CCW: IN1=0, IN2=1
IN1=1, IN2=1
0A 0V
CW: IN1=1, IN2=0 BRAKE: IN1=1, IN2=1
-0.5A -0.5V
-1.0A -1.0V
-1.5A -1.5V
>>
-2.0A -2.0V
0s 0.4s 0.8s 1.2s 1.6s 2.0s 2.4s 2.8s 3.2s 3.6s 4.0s 4.4s 4.8s 5.2s 5.6s 6.0s 6.4s 6.8s 7.2s 7.6s
1 I(MT) 2 V(OUT1,OUT2)
Time
Evaluation circuit
VR1-2
VCC VS
5V R1 4.5V
VR2-2 0.5
VREF VS
0 0 0
MT
IN1 VCC VREF VS OUT1
VIN1
IN1 OUT1
V1 = 0
V2 = 3.5
+
TD = 0.4 VIN2 IN2
IN2 OUT2
OUT2 - U2
TR = 10n V1 = 0 FA-130
TF = 10n V2 = 3.5 GND IL = 0.15
PW = 4 TD = 2.4 U1
PER = 6 TR = 10n TA7291P
TF = 10n
PW = 8
PER = 16
0 0 0
IN1 IN2 OUT1 OUT2 MODE
0 0   STOP
1 0 H L CW / CCW
0 1 L H CCW / CW
1 1 L L BRAKE
All Rights Reserved Copyright (c) Bee Technologies Inc. 2012
15

16. Application Circuit Simulation
Measurement Waveform
Voltage
Current
CCW: IN1=0, IN2=1 BRAKE: IN1=1, IN2=1
CW: IN1=1, IN2=0 BRAKE: IN1=1, IN2=1
All Rights Reserved Copyright (c) Bee Technologies Inc. 2012
16