SPICE MODEL of TPC8026 (Standard+BDS) in SPICE PARK. English Version is http://www.spicepark.net. Japanese Version is http://www.spicepark.com by Bee Technologies.

1. Device Modeling Report
COMPONENTS: Power MOSFET (Model Parameter)
PART NUMBER: TPC8026
MANUFACTURER: TOSHIBA
Body Diode (Model Parameter)
Bee Technologies Inc.
All Rights Reserved Copyright (c) Bee Technologies Inc. 2007

2. Circuit Configuration
MOSFET MODEL
Pspice model
Model description
parameter
LEVEL
L Channel Length
W Channel Width
KP Transconductance
RS Source Ohmic Resistance
RD Ohmic Drain Resistance
VTO Zero-bias Threshold Voltage
RDS Drain-Source Shunt Resistance
TOX Gate Oxide Thickness
CGSO Zero-bias Gate-Source Capacitance
CGDO Zero-bias Gate-Drain Capacitance
CBD Zero-bias Bulk-Drain Junction Capacitance
MJ Bulk Junction Grading Coefficient
PB Bulk Junction Potential
FC Bulk Junction Forward-bias Capacitance Coefficient
RG Gate Ohmic Resistance
IS Bulk Junction Saturation Current
N Bulk Junction Emission Coefficient
RB Bulk Series Resistance
PHI Surface Inversion Potential
GAMMA Body-effect Parameter
DELTA Width effect on Threshold Voltage
ETA Static Feedback on Threshold Voltage
THETA Modility Modulation
KAPPA Saturation Field Factor
VMAX Maximum Drift Velocity of Carriers
XJ Metallurgical Junction Depth
UO Surface Mobility
All Rights Reserved Copyright (c) Bee Technologies Inc. 2007

3. Transconductance Characteristic
Circuit Simulation Result
50
Measurement
Simulation
40
30
gfs
20
10
0
0.0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10.0
ID : Drain Current A
Comparison table
Id(A) gfs Error(%)
Measurement Simulation
0.100 3.500 3.334 -4.743
0.200 5.200 5.000 -3.846
0.500 8.700 8.929 2.632
1.000 12.300 12.500 1.626
2.000 17.345 17.544 1.147
5.000 24.500 24.038 -1.886
10.000 33.000 33.113 0.342
All Rights Reserved Copyright (c) Bee Technologies Inc. 2007

4. Vgs-Id Characteristic
Circuit Simulation result
10A
1.0A
100mA
10mA
1.0V 1.5V 2.0V 2.5V 3.0V 3.5V 4.0V 4.5V 5.0V
I(V3)
V_V2
Evaluation circuit
V3
0Vdc
U2
TPC8026
Vv ariable
10Vdc 10Vdc
V2
0
All Rights Reserved Copyright (c) Bee Technologies Inc. 2007

5. Comparison Graph
Circuit Simulation Result
10.00
Measurement
Simulation
1.00
ID : Drain Current A
0.10
0.01
1.0 2.0 3.0 4.0 5.0
VGS : Gate to Source Voltage V
Simulation Result
ID(A) VGS(V) Error (%)
Measurement Simulation
0.010 2.540 2.560 0.787
0.020 2.550 2.573 0.902
0.050 2.563 2.580 0.663
0.100 2.610 2.602 -0.326
0.200 2.630 2.625 -0.186
0.500 2.652 2.672 0.765
1.000 2.710 2.725 0.557
2.000 2.780 2.800 0.719
5.000 3.000 2.950 -1.680
10.000 3.100 3.120 0.639
All Rights Reserved Copyright (c) Bee Technologies Inc. 2007

6. Rds(on) Characteristic
Circuit Simulation result
10A
9A
8A
7A
6A
5A
4A
3A
2A
1A
0A
0V 10mV 20mV 30mV 40mV 50mV 60mV 70mV 80mV
I(V3)
V_VDS
Evaluation circuit
V3
0Vdc
U2
TPC8026
VDS
10Vdc 0Vdc
VGS
0
Simulation Result
ID=6.5A, VGS=10V Measurement Simulation Error (%)
R DS (on) () 0.0051 0.00505 -0.980
All Rights Reserved Copyright (c) Bee Technologies Inc. 2007

7. Gate Charge Characteristic
Circuit Simulation result
20V
16V
12V
8V
4V
0V
0 10n 20n 30n 40n 50n 60n 70n
V(W1:3)
Time*1mS
Evaluation circuit
V2
0Vdc
U2
TPC8026
Dbreak
PER = 1000u D1
PW = 600u W1 I2
TF = 10n + 13Adc
TR = 10n
-
TD = 0
I2 = 1m W
I1 IOFF = 0.1mA
I1 = 0 ION = 0uA V1
24Vdc
0
Simulation Result
VDD=24V,ID=13A Measurement Simulation Error (%)
,VGS=10V
Qgs(nc) 6.500 6.487 -0.200
Qgd(nc) 14.000 14.030 0.214
Qg(nc) 42.000 33.793 -19.540
All Rights Reserved Copyright (c) Bee Technologies Inc. 2007

8. Capacitance Characteristic
Measurement
Simulation
Simulation Result
VDS(V) Cbd(pF) Error(%)
Measurement Simulation
0.1 640 646 0.940
0.2 630 628 -0.320
0.5 580 575 -0.860
1 510 510 0.000
2 420 422 0.480
5 290 292 0.690
10 200 203 1.500
20 140 137 -2.140
All Rights Reserved Copyright (c) Bee Technologies Inc. 2007

9. Switching Time Characteristic
Circuit Simulation result
20V
15V
10V
5V
0V
1.85us 1.95us 2.05us 2.15us 2.25us 2.35us
V(2)*1.5 V(3)
Time
Evaluation circuit
3 L2
50n
U2
TPC8026
RL
2.3
R1 L1 2
V1 = 0 4.7 30nH VDD
V2 = 20 V2 15Vdc
TD = 2u R2
TR = 6n
TF = 7n 4.7
PW = 2u
PER = 10u
0
Simulation Result
ID=6.5A, VDD=15V Measurement Simulation Error(%)
VGS=10V
Ton(ns) 28.000 28.074 0.264
All Rights Reserved Copyright (c) Bee Technologies Inc. 2007

10. Output Characteristic
Circuit Simulation result
50A
4
40A
3.8
30A
3.6
20A
3.4
3.3
10A
3.2
3.1
VGS= 3 V
0A
0V 0.2V 0.4V 0.6V 0.8V 1.0V 1.2V 1.4V 1.6V 1.8V 2.0V
I(Vdsense)
V_Vvariable
Evaluation circuit
Vdsense
0Vdc
U2
TPC8026
Vv ariable
0Vdc
10Vdc
Vstep
0
All Rights Reserved Copyright (c) Bee Technologies Inc. 2007

11. BODY DIODE SPICE MODEL
Forward Current Characteristic
Circuit Simulation Result
10A
1.0A
100mA
10mA
0V 0.2V 0.4V 0.6V 0.8V 1.0V 1.2V
I(R1)
V_V1
Evaluation Circuit
R1
0.01m
V1
0Vdc TPC8026
U2
0
All Rights Reserved Copyright (c) Bee Technologies Inc. 2007

12. Comparison Graph
Circuit Simulation Result
10.00
Measurement
Simulation
Drain reverse current IDR(A)
1.00
0.10
0.01
0 0.2 0.4 0.6 0.8 1 1.2
Source: Drain voltage VSD(V)
Simulation Result
IDR(A) VDS(V) VDS(V) %Error
Measurement Simulation
0.010 0.480 0.497 3.542
0.020 0.499 0.506 1.403
0.050 0.510 0.520 1.961
0.100 0.525 0.530 0.952
0.200 0.548 0.543 -0.912
0.500 0.572 0.568 -0.699
1.000 0.614 0.600 -2.280
2.000 0.661 0.655 -0.908
5.000 0.798 0.809 1.378
10.000 1.080 1.060 -1.852
All Rights Reserved Copyright (c) Bee Technologies Inc. 2007

13. Reverse Recovery Characteristic
Circuit Simulation Result
400mA
200mA
0A
-200mA
-400mA
19.92us 20.00us 20.08us 20.16us 20.24us 20.32us
I(R1)
Time
Evaluation Circuit
R1
50
V1 = -9.4v V1
V2 = 10.7v
TD = 15n TPC8026
TR = 10ns U2
TF = 9ns
PW = 20us
PER = 100us
0
Compare Measurement vs. Simulation
Measurement Simulation Error (%)
Trr(ns) 87.200 87.404 0.234
All Rights Reserved Copyright (c) Bee Technologies Inc. 2007

14. Reverse Recovery Characteristic Reference
Trj= 18.4 (ns)
Trb= 68.8 (ns)
Conditions:Ifwd=lrev=0.2(A),Rl=50
Example
Relation between trj and trb
All Rights Reserved Copyright (c) Bee Technologies Inc. 2007