This 3 sentence summary provides the key components and modeling parameters of the TPCA8004-H power MOSFET: The document reports on the modeling of the TPCA8004-H power MOSFET manufactured by Toshiba, including its body diode and ESD protection diode. It details the model parameters, simulation results comparing measurements and simulations, and characteristic performance curves for the MOSFET, body diode and protection diode such as transconductance, capacitance, switching time and reverse recovery.

1. Device Modeling Report
COMPONENTS: Power MOSFET (Model Parameters)
PART NUMBER: TPCA8004-H
MANUFACTURER: TOSHIBA
Body Diode (Model Parameters) / ESD Protection Diode
Bee Technologies Inc.
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006

2. MOSFET MODEL
PSpice model
Model description
parameter
LEVEL
L Channel Length
W Channel Width
KP Transconductance
RS Source Ohmic Resistance
RD Ohmic Drain Resistance
VTO Zero-bias Threshold Voltage
RDS Drain-Source Shunt Resistance
TOX Gate Oxide Thickness
CGSO Zero-bias Gate-Source Capacitance
CGDO Zero-bias Gate-Drain Capacitance
CBD Zero-bias Bulk-Drain Junction Capacitance
MJ Bulk Junction Grading Coefficient
PB Bulk Junction Potential
FC Bulk Junction Forward-bias Capacitance Coefficient
RG Gate Ohmic Resistance
IS Bulk Junction Saturation Current
N Bulk Junction Emission Coefficient
RB Bulk Series Resistance
PHI Surface Inversion Potential
GAMMA Body-effect Parameter
DELTA Width effect on Threshold Voltage
ETA Static Feedback on Threshold Voltage
THETA Mobility Modulation
KAPPA Saturation Field Factor
VMAX Maximum Drift Velocity of Carriers
XJ Metallurgical Junction Depth
UO Surface Mobility
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006

3. Transconductance Characteristic
Circuit Simulation Result
130
120
110
100
90
80
70
gfs
60
50
40
30
20
Measurement
10
Simulation
0
0 10 20 30 40 50
ID(A)
Comparison table
gfs
Id(A) Error(%)
Measurement Simulation
0.1 5.000 5.000 0.000
0.2 10.000 10.000 0.000
0.5 12.400 12.500 0.806
1 20.000 20.000 0.000
2 28.500 28.571 0.249
5 40.000 40.461 1.153
10 55.000 55.555 1.009
20 76.000 76.923 1.214
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006

4. Vgs-Id Characteristic
Circuit Simulation result
100A
80A
60A
40A
20A
0A
0V 1.0V 2.0V 3.0V 4.0V 5.0V 6.0V
I(V3)
V_V2
Evaluation circuit
U22
V3
0Vdc
TPCA8004-H V1
V2
0Vdc 10Vdc
0
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006

5. Comparison Graph
Circuit Simulation Result
50
Measurement
Simulation
40
ID - Drain Current - A
30
20
10
0
0 1 2 3 4 5 6
VGS - Gate to Source Voltage - V
Simulation Result
VGS(V)
ID(A) Error (%)
Measurement Simulation
0.1 2.500 2.518 0.720
0.2 2.520 2.533 0.516
0.5 2.550 2.562 0.471
1 2.600 2.595 -0.192
2 2.650 2.642 -0.302
5 2.740 2.735 -0.182
10 2.850 2.843 -0.246
20 3.000 2.998 -0.067
50 3.300 3.317 0.515
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006

6. Rds(on) Characteristic
Circuit Simulation result
24A
20A
16A
12A
8A
4A
0A
0V 50mV 100mV 150mV 200mV
I(V3)
V_VDS
Evaluation circuit
U22
V3
0Vdc
VGS
TPCA8004-H VDS
10Vdc 0Vdc
0
Simulation Result
ID=20A, VGS=10V Measurement Simulation Error (%)
R DS (on) 0.0035  0.00349  -0.286
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006

7. Gate Charge Characteristic
Circuit Simulation result
20V
16V
12V
8V
4V
0V
0 8n 16n 24n 32n 40n
V(W1:3)
Time*1mS
Evaluation circuit
U22 V2
0Vdc
Dbreak
D1
PER = 1000u
PW = 600u W1 I2
TF = 10n + TPCA8004-H 40Adc
TR = 10n
TD = 0
-
I2 = 1m W
I1 IOFF = 100uA V1
I1 = 0 ION = 0uA 24Vdc
0
Simulation Result
VDD=24V,ID=40A
Measurement Simulation Error (%)
,VGS=10V
Qgs(nC) 8.200 8.214 0.171
Qgd(nC) 8.700 8.750 0.575
Qg 37.00 34.911 -5.646
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006

8. Capacitance Characteristic
Measurement
Simulation
Simulation Result
Cbd(pF)
VDS(V) Error(%)
Measurement Simulation
0.1 2380 2400 0.840
0.2 2300 2290 -0.435
0.5 2000 2005 0.250
1 1700 1703 0.176
2 1380 1385 0.362
5 980 984 0.408
10 740 742 0.270
20 570 569 -0.175
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006

9. Switching Time Characteristic
Circuit Simulation result
14V
12V
10V
8V
6V
4V
2V
0V
1.0000us 1.0500us 1.0965us
V(L1:2) V(L2:1)/1.5
Time
Evaluation circuit
U22 L2 RL
50nH 0.75
R1 L1
V1 = 0
30nH
V2 = 20 V2 4.7 V1
TD = 1u R2 TPCA8004-H 15Vdc
TR = 10n
TF = 10n 4.7
PW = 10u
PER = 200u
0
Simulation Result
ID=20 A, VDD=15V
Measurement Simulation Error(%)
VGS=0/10V
Ton(ns) 14.000 14.107 0.764
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006

10. Output Characteristic
Circuit Simulation result
100A
10
5
3.8
6
80A
3.6
60A
3.4
40A
3.2
20A
VGS=3 V
0A
0V 1.0V 2.0V 3.0V 4.0V 5.0V
I(Vdsense)
V_Vvariable
Evaluation circuit
U22
Vdsense
10Vdc 0Vdc
TPCA8004-H Vv ariable
Vstep
5Vdc
0
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006

11. BODY DIODE
Forward Current Characteristic
Circuit Simulation Result
1.0KA
100A
10A
1.0A
100mA
0V 400mV 800mV 1000mV
I(R1)
V_V1
Evaluation Circuit
R1
0.01m
V1 U22
0Vdc
TPCA8004-H
0
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006

12. Comparison Graph
Circuit Simulation Result
1000
Measurement
Simulation
100
Drain reverse current IDR(A)
10
1
0.1
0 0.2 0.4 0.6 0.8 1
Source-Drain voltage VSD(V)
Simulation Result
VSD(V)
IDR(A) Measuremen Simulation %Error
0.1 0.600 0.601 0.167
0.2 0.620 0.620 0.000
0.5 0.650 0.644 -0.923
1 0.660 0.662 0.303
2 0.680 0.682 0.294
5 0.710 0.711 0.141
10 0.740 0.737 -0.405
20 0.770 0.771 0.130
50 0.840 0.840 0.000
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006

13. Reverse Recovery Characteristic
Circuit Simulation Result
400mA
300mA
200mA
100mA
-0mA
-100mA
-200mA
-300mA
-400mA
0.7us 0.8us 1.0us 1.2us 1.3us 1.5us 1.7us
I(R1)
Evaluation Circuit Time
R1
50
V1 = -9.4v V1
V2 = 10.6v U22
TD = 7n
TR = 10ns
TF = 13ns TPCA8004-H
PW = 1us
PER = 100us
0
Compare Measurement vs. Simulation
Trr(ns) Measurement Simulation Error (%)
Trj+Trb(ns) 158.500 158.393 -0.068
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006

14. Reverse Recovery Characteristic Reference
Trj=18.5(ns)
Trb=140ns)
Conditions:Ifwd=lrev=0.2(A),Rl=50
Example
Relation between trj and trb
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006

15. ESD PROTECTION DIODE
Zener Voltage Characteristic
Circuit Simulation Result
10mA
9mA
8mA
7mA
6mA
5mA
4mA
3mA
2mA
1mA
0A
0V 5V 10V 15V 20V 25V 30V 35V 40V 45V 50V
I(R1)
V_V1
Evaluation Circuit
U22
R1 TPCA8004-H
R2
0.01m
100MEG
V1
0Vdc
0
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006

16. Zener Voltage Characteristic Reference
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006