SPICE MODEL of SSM3J115TU (Standard+BDS Model) in SPICE PARK
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SPICE MODEL of SSM3J115TU (Standard+BDS) in SPICE PARK. English Version is http://www.spicepark.net. Japanese Version is http://www.spicepark.com by Bee Technologies.
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SPICE MODEL of SSM3J115TU (Standard+BDS Model) in SPICE PARK
- 1. Device Modeling Report COMPONENTS: Power MOSFET (Model Parameter) PART NUMBER: SSM3J115TU MANUFACTURER: TOSHIBA Body Diode (Model Parameter) / ESD Protection Diode Bee Technologies Inc. All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
- 2. MOSFET MODEL Pspice model Model description parameter LEVEL L Channel Length W Channel Width KP Transconductance RS Source Ohmic Resistance RD Ohmic Drain Resistance VTO Zero-bias Threshold Voltage RDS Drain-Source Shunt Resistance TOX Gate Oxide Thickness CGSO Zero-bias Gate-Source Capacitance CGDO Zero-bias Gate-Drain Capacitance CBD Zero-bias Bulk-Drain Junction Capacitance MJ Bulk Junction Grading Coefficient PB Bulk Junction Potential FC Bulk Junction Forward-bias Capacitance Coefficient RG Gate Ohmic Resistance IS Bulk Junction Saturation Current N Bulk Junction Emission Coefficient RB Bulk Series Resistance PHI Surface Inversion Potential GAMMA Body-effect Parameter DELTA Width effect on Threshold Voltage ETA Static Feedback on Threshold Voltage THETA Modility Modulation KAPPA Saturation Field Factor VMAX Maximum Drift Velocity of Carriers XJ Metallurgical Junction Depth UO Surface Mobility All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
- 3. Transconductance Characteristic Circuit Simulation Result 100.00 Measurement Simulation 10.00 gfs 1.00 0.10 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 - ID : Drain Current A Comparison table -Id(A) gfs Error(%) Measurement Simulation 0.010 0.240 0.250 4.167 0.020 0.698 0.727 4.155 0.050 1.050 1.089 3.714 0.100 1.500 1.554 3.600 0.200 2.200 2.162 -1.727 0.500 3.500 3.387 -3.229 1.000 4.200 4.049 -3.595 2.000 6.250 6.473 3.568 All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
- 4. Vgs-Id Characteristic Circuit Simulation result -10A -10mA 0V -0.2V -0.6V -1.0V -1.4V -1.8V I(V3) V_V1 Evaluation circuit V3 0Vdc U1 SSM3J115TU V2 V1 -3 -3 0 All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
- 5. Comparison Graph Circuit Simulation Result 10.00 Measurement Simulation 1.00 - ID : Drain Current A 0.10 0.01 0.0 1.0 2.0 - VGS : Gate to Source Voltage V Simulation Result -ID(A) -VGS(V) Error (%) Measurement Simulation 0.010 0.661 0.657 -0.605 0.020 0.691 0.677 -2.026 0.050 0.730 0.713 -2.329 0.100 0.778 0.754 -3.085 0.200 0.827 0.812 -1.814 0.500 0.897 0.927 3.344 1.000 1.025 1.062 3.610 2.000 1.214 1.253 3.213 All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
- 6. Rds(on) Characteristic Circuit Simulation result -1.0A -0.5A 0A 0V -50mV -100mV -150mV I(VD_Sense) V_VDS Evaluation circuit VD_Sense 0Vdc U1 SSM3J115TU VGS VDS 10Vdc -4Vdc 0 Simulation Result ID=-1A, VGS=-4V Measurement Simulation Error (%) R DS (on) () 0.077 0.077017 0.022 All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
- 7. Gate Charge Characteristic Circuit Simulation result -10V -9V -8V -7V -6V -5V -4V -3V -2V -1V 0V 0 -5n -10n -15n -20n -25n V(W1:4) Time*-1mA Evaluation circuit ION = 0uA IOFF = 1mA W - U1 + SSM3J115TU I1 = 0 W1 D2 I2 I1 Dbreak 1.2 I2 = 1m TD = 0 TR = 10n V1 TF = 10n PW = 600u PER = 1000u -16 0 Simulation Result VDD=-16V,ID=-1.2A Measurement Simulation Error (%) ,VGS=-4V Qgs(nc) 0.500 0.517 3.400 Qgd(nc) 3.500 3.537 1.057 Qg(nc) 10.800 12.947 19.880 All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
- 8. Capacitance Characteristic Measurement Simulation Simulation Result VDS(V) Cbd(pF) Error(%) Measurement Simulation 0.100 55.000 54.350 -1.180 0.200 45.000 45.800 1.780 0.500 31.000 31.100 0.320 1.000 20.000 20.300 1.500 2.000 12.500 12.300 -1.600 5.000 5.800 5.700 -1.720 10.000 3.300 3.200 -3.030 All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
- 9. Switching Time Characteristic Circuit Simulation result -15V -10V -5V 0V 1.6us 1.8us 2.0us 2.2us 2.4us 2.6us V(L1:2)*4 V(R2:2) Time Evaluation circuit R2 L2 11.111 50nH U1 R3 L1 SSM3J115TU PER = 200u PW = 10u 4.7 30nH V1 TF = 1n -10Vdc TR = 1n R1 TD = 2u V2 = 5 V2 4.7 V1 = 0 0 Simulation Result ID=-0.9A, VDD=-10V Measurement Simulation Error(%) VGS=-2.5V Ton(ns) 29.000 29.207 0.714 All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
- 10. Output Characteristic Circuit Simulation result -4.0A -1.5 V -4 V -2.5V -1.8 V -3.5A -3.0A -2.5A -2.0A VGS= -1.2V V -1.5A -1.0A -0.5A 0A 0V -0.5V -1.0V -1.5V -2.0V I(V3) V_V2 Evaluation circuit V3 0Vdc U1 SSM3J115TU V2 -0.5 V1 -4 0 All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
- 11. BODY DIODE SPICE MODEL Forward Current Characteristic Circuit Simulation Result 10A 1.0A 100mA 10mA 1.0mA 0V 0.2V 0.4V 0.6V 0.8V 1.0V 1.2V I(VD_Sense) V_VDS Evaluation Circuit VD_Sense 0Vdc U1 SSM3J115TU VDS 10Vdc 0 All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
- 12. Comparison Graph Circuit Simulation Result 10.00 Measurement Simulation -Drain reverse current IDR(A) 1.00 0.10 0.01 0 0.2 0.4 0.6 0.8 1 1.2 Source: Drain voltage VSD(V) Simulation Result -IDR(A) VDS(V) VDS(V) %Error Measurement Simulation 0.010 0.396 0.397 0.253 0.020 0.420 0.419 -0.238 0.050 0.454 0.453 -0.220 0.100 0.486 0.485 -0.206 0.200 0.523 0.525 0.382 0.500 0.596 0.595 -0.168 1.000 0.668 0.668 0.000 2.000 0.396 0.397 0.253 All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
- 13. Reverse Recovery Characteristic Circuit Simulation Result 400mA 300mA 200mA 100mA -0mA -100mA -200mA -300mA -400mA 0.94us 0.98us 1.02us 1.06us 1.10us 1.14us I(R1) Time Evaluation Circuit R1 50 V1 = -9.6v V1 V2 = 10.5v U1 TD = 12n SSM3J115TU TR = 1ns TF = 10ns PW = 1us PER = 100us 0 Compare Measurement vs. Simulation Measurement Simulation Error (%) Trj(ns) 13.200 13.303 0.780 All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
- 14. Reverse Recovery Characteristic Reference Trj= 13.2 (ns) Trb= 10.8 (ns) Conditions:Ifwd=lrev=0.2(A),Rl=50 Example Relation between trj and trb All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
- 15. ESD PROTECTION DIODE SPICE MODEL Zener Voltage Characteristic Circuit Simulation Result 10uA 9uA 8uA 7uA 6uA 5uA 4uA 3uA 2uA 1uA 0A 0V 2V 4V 6V 8V 10V 12V 14V 16V 18V 20V I(R1) V_V1 Evaluation Circuit R1 0.01m V1 0Vdc U1 SSM3J115TU R2 100MEG 0 All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
- 16. Zener Voltage Characteristic Reference All Rights Reserved Copyright (c) Bee Technologies Inc. 2008