The document provides a comprehensive device modeling report for a power MOSFET (part number: 2SJ495) manufactured by NEC, detailing various electrical characteristics and simulation results. It includes specifications on model parameters, transconductance characteristics, switching times, capacitances, and ESD protection diode behavior. The report features measurement vs. simulation comparisons, highlighting performance metrics and errors across different test conditions.

1. Device Modeling Report
COMPONENTS: Power MOSFET (Model Parameters)
PART NUMBER: 2SJ495
MANUFACTURER: NEC
Body Diode (Model Parameters) / ESD Protection Diode
Bee Technologies Inc.
All Rights Reserved Copyright (c) Bee Technologies Inc. 2007

2. MOSFET MODEL
Pspice model
Model description
parameter
LEVEL
L Channel Length
W Channel Width
KP Transconductance
RS Source Ohmic Resistance
RD Ohmic Drain Resistance
VTO Zero-bias Threshold Voltage
RDS Drain-Source Shunt Resistance
TOX Gate Oxide Thickness
CGSO Zero-bias Gate-Source Capacitance
CGDO Zero-bias Gate-Drain Capacitance
CBD Zero-bias Bulk-Drain Junction Capacitance
MJ Bulk Junction Grading Coefficient
PB Bulk Junction Potential
FC Bulk Junction Forward-bias Capacitance Coefficient
RG Gate Ohmic Resistance
IS Bulk Junction Saturation Current
N Bulk Junction Emission Coefficient
RB Bulk Series Resistance
PHI Surface Inversion Potential
GAMMA Body-effect Parameter
DELTA Width effect on Threshold Voltage
ETA Static Feedback on Threshold Voltage
THETA Modility Modulation
KAPPA Saturation Field Factor
VMAX Maximum Drift Velocity of Carriers
XJ Metallurgical Junction Depth
UO Surface Mobility
All Rights Reserved Copyright (c) Bee Technologies Inc. 2007

3. Transconductance Characteristic
Circuit Simulation Result
30
25
20
gfs
15
10
5
Measurement
Simulation
0
0 4 8 12 16 20
- ID - Drain Current - A
Comparison table
gfs
Id(A) Error(%)
Measurement Simulation
-0.2 3.330 3.333 0.090
-0.5 5.550 5.556 0.108
-1 7.500 7.692 2.560
-2 10.500 10.526 0.248
-5 15.550 15.625 0.482
-10 20.200 20.408 1.030
-20 25.400 25.641 0.949
All Rights Reserved Copyright (c) Bee Technologies Inc. 2007

4. Vgs-Id Characteristic
Circuit Simulation result
-100A
-1.0A
-200mA
0V -2.0V -4.0V -6.0V -8.0V
I(V3)
V_V1
Evaluation circuit
V3
0Vdc
U14
V2
2SJ495
V1 -10
0
0
All Rights Reserved Copyright (c) Bee Technologies Inc. 2007

5. Comparison Graph
Circuit Simulation Result
100
Measurement
Simulation
10
- ID - Drain Current - A
1
0.1
0.0 2.0 4.0 6.0 8.0
- VGS - Gate to Source Voltage - V
Simulation Result
VGS(V)
ID(A) Error (%)
Measurement Simulation
-0.2 -1.800 -1.793 -0.389
-0.5 -1.900 -1.861 -2.053
-1 -2.000 -1.939 -3.050
-2 -2.150 -2.049 -4.698
-5 -2.400 -2.283 -4.875
-10 -2.650 -2.564 -3.245
-20 -3.000 -2.993 -0.233
All Rights Reserved Copyright (c) Bee Technologies Inc. 2007

6. Rds(on) Characteristic
Circuit Simulation result
-15A
-10A
-5A
0A
0V -100mV -200mV -300mV -400mV
I(VD_Sense)
V_VDS
Evaluation circuit
VD_Sense
0Vdc
U14
2SJ495
VDS
VGS 10Vdc
-10Vdc
0
Simulation Result
ID=-15A, VGS=-10V Measurement Simulation Error (%)
R DS (on)  0.024 0.024 0
All Rights Reserved Copyright (c) Bee Technologies Inc. 2007

7. Gate Charge Characteristic
Circuit Simulation result
-14V
-12V
-10V
-8V
-6V
-4V
-2V
0V
0 -40n -80n -120n -160n
V(W1:4)
Time*-1mA
Evaluation circuit
ION = 0uA
IOFF = 1mA
W U14
-
+ 2SJ495
I1 = 0 W1 D2 I2
I1 Dbreak 30
I2 = 1m
TD = 0
TR = 10n V1
TF = 10n
PW = 600u
PER = 1000u -48
0
Simulation Result
VDD=-48V,ID=-30A Measurement Simulation Error (%)
,VGS=-10V
Qgs (nC) 12.000 12.069 0.575
Qgd(nC) 46.000 45.995 -0.011
Qg(nC) 140.000 79.685 -43.082
All Rights Reserved Copyright (c) Bee Technologies Inc. 2007

8. Capacitance Characteristic
Measurement
Simulation
Simulation Result
Cbd(pF)
VDS(V) Error(%)
Measurement Simulation
0.1 3200 3210 0.313
0.2 3100 3115 0.484
0.5 2900 2900 0.000
1 2600 2600 0.000
2 2150 2155 0.233
5 1600 1600 0.000
10 1200 1200 0.000
20 850 847 -0.353
50 550 550 0.000
All Rights Reserved Copyright (c) Bee Technologies Inc. 2007

9. Switching Time Characteristic
Circuit Simulation result
-12V
-8V
-4V
0V
1.815us 1.900us 2.000us 2.100us 2.200us 2.300us 2.400us
V(L1:2) V(L2:1)/3
Time
Evaluation circuit
L2 R2
50nH 2
RG L1 U14
PER = 20u 2SJ495
PW = 1u 30nH V1
TF = 1n 10 -30Vdc
TR = 1n R1
TD = 2u
V2 = 20 V2 10
V1 = 0
0
Simulation Result
ID=-15A, VDD=-30V
Measurement Simulation Error(%)
VGS=0/-10V
Ton(ns) 40.000 40.287 0.717
All Rights Reserved Copyright (c) Bee Technologies Inc. 2007

10. Output Characteristic
Circuit Simulation result
-20A
-18A
-3.00V
-16A
-14A
-12A
-2.50V
-10A
-8A
-6A
-4A
VGS=-2.00V
-2A
0A
0V -1V -2V -3V -4V -5V -6V -7V -8V -9V -10V
I(V3)
V_V2
Evaluation circuit
V3
0Vdc
U14
V2
2SJ495
0
V1
-4
0
All Rights Reserved Copyright (c) Bee Technologies Inc. 2007

11. Output Characteristic Reference
All Rights Reserved Copyright (c) Bee Technologies Inc. 2007

12. BODY DIODE
Forward Current Characteristic
Circuit Simulation Result
100A
10A
1.0A
100mA
0V 1.0V 2.0V 3.0V
I(VD_Sense)
V_VDS
Evaluation Circuit
VD_Sense
0Vdc
VDS U14
10Vdc
2SJ495
0
All Rights Reserved Copyright (c) Bee Technologies Inc. 2007

13. Comparison Graph
Circuit Simulation Result
100.000
Measurement
Simulation
-Drain reverse current IDR(A)
10.000
1.000
0.100
0.00 1.00 2.00 3.00
- Source-Drain voltage VSD(V)
Simulation Result
VDS(V) VDS(V)
IDR(A) Measurement Simulation %Error
-0.5 -0.590 -0.585 -0.847
-1 -0.620 -0.630 1.613
-2 -0.690 -0.690 0.000
-5 -0.800 -0.792 -1.000
-10 -0.900 -0.901 0.111
-20 -1.080 -1.079 -0.093
All Rights Reserved Copyright (c) Bee Technologies Inc. 2007

14. Reverse Recovery Characteristic
Circuit Simulation Result
400mA
300mA
200mA
100mA
-0mA
-100mA
-200mA
-300mA
-400mA
0.4us 0.6us 0.8us 1.0us 1.2us 1.4us 1.6us 1.8us 2.0us 2.2us
I(R1)
Time
Evaluation Circuit
R1
50
U16
V1 = -9.4v V1
V2 = 10.6v D2SJ495
TD = 1n
TR = 10ns
TF = 15ns
PW = 1us
PER = 100us
0
Compare Measurement vs. Simulation
Trr(ns) Measurement Simulation Error (%)
Trj+Trb 382.000 382.840 0.220
All Rights Reserved Copyright (c) Bee Technologies Inc. 2007

15. Reverse Recovery Characteristic Reference
Trj=29.000(ns)
Trb=353.000(ns)
Conditions:Ifwd=lrev=0.2(A),Rl=50
Example
Relation between trj and trb
All Rights Reserved Copyright (c) Bee Technologies Inc. 2007

16. ESD PROTECTION DIODE
Zener Voltage Characteristic
Circuit Simulation Result
10mA
9mA
8mA
7mA
6mA
5mA
4mA
3mA
2mA
1mA
0A
0V 5V 10V 15V 20V 25V 30V 35V 40V 45V 50V
I(R1)
V_V1
Evaluation Circuit
R1
0.01m
V1
0Vdc
R2
U30
100MEG
2SJ495
0
All Rights Reserved Copyright (c) Bee Technologies Inc. 2007

17. Zener Voltage Characteristic Reference
All Rights Reserved Copyright (c) Bee Technologies Inc. 2007