This document summarizes the modeling parameters and simulation results for a TPC8117 power MOSFET manufactured by Toshiba. It includes MOSFET and body diode SPICE models and simulations validating the models, comparing measurement and simulation results for key characteristics like transconductance, capacitance, switching times and reverse recovery. The simulations show good agreement with measurements, validating the accuracy of the models.

1. Device Modeling Report
COMPONENTS: Power MOSFET (Model Parameter)
PART NUMBER: TPC8117
MANUFACTURER: TOSHIBA
Body Diode (Model Parameter)
Bee Technologies Inc.
All Rights Reserved Copyright (c) Bee Technologies Inc. 2007

2. Circuit Configuration
MOSFET MODEL
Pspice model
Model description
parameter
LEVEL
L Channel Length
W Channel Width
KP Transconductance
RS Source Ohmic Resistance
RD Ohmic Drain Resistance
VTO Zero-bias Threshold Voltage
RDS Drain-Source Shunt Resistance
TOX Gate Oxide Thickness
CGSO Zero-bias Gate-Source Capacitance
CGDO Zero-bias Gate-Drain Capacitance
CBD Zero-bias Bulk-Drain Junction Capacitance
MJ Bulk Junction Grading Coefficient
PB Bulk Junction Potential
FC Bulk Junction Forward-bias Capacitance Coefficient
RG Gate Ohmic Resistance
IS Bulk Junction Saturation Current
N Bulk Junction Emission Coefficient
RB Bulk Series Resistance
PHI Surface Inversion Potential
GAMMA Body-effect Parameter
DELTA Width effect on Threshold Voltage
ETA Static Feedback on Threshold Voltage
THETA Modility Modulation
KAPPA Saturation Field Factor
VMAX Maximum Drift Velocity of Carriers
XJ Metallurgical Junction Depth
UO Surface Mobility
All Rights Reserved Copyright (c) Bee Technologies Inc. 2007

3. Transconductance Characteristic
Circuit Simulation Result
Measurement
Simulation
50
40
gfs
30
20
10
0
0.0 2.0 4.0 6.0 8.0 10.0
- ID : Drain Current A
Comparison table
gfs
-Id(A) Error(%)
Measurement Simulation
0.100 1.200 1.190 -0.833
0.200 2.500 2.439 -2.440
0.500 6.300 6.098 -3.206
1.000 12.500 12.195 -2.440
2.000 18.500 18.018 -2.605
5.000 30.500 29.762 -2.420
10.000 42.500 41.494 -2.367
All Rights Reserved Copyright (c) Bee Technologies Inc. 2007

4. Vgs-Id Characteristic
Circuit Simulation result
-50A
-40A
-20A
0A
0V -1.0V -2.0V -3.0V -4.0V
I(V3)
V_V1
Evaluation circuit
V3
0Vdc
U1
TPC8117
V2
-10
V1
-3
0
All Rights Reserved Copyright (c) Bee Technologies Inc. 2007

5. Comparison Graph
Circuit Simulation Result
Measurement
Simulation
40
- ID : Drain Current A
30
20
10
0
0.0 1.0 2.0 3.0 4.0 5.0
- VGS : Gate to Source Voltage V
Simulation Result
-VGS(V)
-ID(A) Error (%)
Measurement Simulation
0.100 1.555 1.590 2.251
0.200 1.610 1.607 -0.186
0.500 1.680 1.648 -1.905
1.000 1.740 1.698 -2.414
2.000 1.805 1.762 -2.382
5.000 1.950 1.893 -2.923
10.000 2.080 2.042 -1.827
20.000 2.250 2.256 0.267
50.000 2.550 2.670 4.706
All Rights Reserved Copyright (c) Bee Technologies Inc. 2007

6. Rds(on) Characteristic
Circuit Simulation result
-9.0A
-8.0A
-7.0A
-6.0A
-5.0A
-4.0A
-3.0A
-2.0A
-1.0A
0A
0V -10mV -20mV -30mV -40mV -50mV
I(VD_Sense)
V_VDS
Evaluation circuit
VD_Sense
0Vdc
U1
TPC8117
VDS
10Vdc
VGS
-10Vdc
0
Simulation Result
ID=-9A, VGS=-10V Measurement Simulation Error (%)
R DS (on) () 0.003 0.003 0.000
All Rights Reserved Copyright (c) Bee Technologies Inc. 2007

7. Gate Charge Characteristic
Circuit Simulation result
-30V
-20V
-10V
0V
0 -40n -80n -120n -160n -200n
V(W1:4)
Time*-1mA
Evaluation circuit
U1
TPC8117
ION = 0uA
IOFF = 1mA
W
-
+
D2 I2
W1 Dbreak 18
I1 = 0 I1
I2 = 1m
TD = 0 V1
TR = 10n
TF = 10n
PW = 600u -24
PER = 1000u
0
Simulation Result
VDD=-24V,ID=-18A
Measurement Simulation Error (%)
,VGS=-10V
Qgs(nc) 12.000 11.986 -0.117
Qgd(nc) 40.000 40.218 0.545
Qg(nc) 120.000 95.206 -20.662
All Rights Reserved Copyright (c) Bee Technologies Inc. 2007

8. Capacitance Characteristic
Measurement
Simulation
Simulation Result
Cbd(pF)
VDS(V) Error(%)
Measurement Simulation
0.100 1120.000 1118.000 -0.180
0.200 1090.000 1090.000 0.000
0.500 1010.000 1012.000 0.200
1.000 910.000 912.000 0.220
2.000 770.000 770.000 0.000
5.000 550.000 550.000 0.000
10.000 400.000 395.000 -1.250
20.000 260.000 265.000 1.920
All Rights Reserved Copyright (c) Bee Technologies Inc. 2007

9. Switching Time Characteristic
Circuit Simulation result
-20V
-16V
-12V
-8V
-4V
0V
1.88us 1.96us 2.04us 2.12us 2.20us 2.28us
V(L1:2) V(L2:2)/1.5
Time
Evaluation circuit
RL
L2 1.7
5nH
U1
TPC8117
R1 L1
PER = 200u
PW = 10u 30nH V1
TF = 1n 4.7 -15Vdc
TR = 1n R2
TD = 2u
V2 = 20 V2 4.7
V1 = 0
0
Simulation Result
ID=-9A, VDD=-15V
Measurement Simulation Error(%)
VGS=-10V
Ton(ns) 20.000 20.320 1.600
All Rights Reserved Copyright (c) Bee Technologies Inc. 2007

10. Output Characteristic
Circuit Simulation result
-20A
-2.4
-16A -2.2
-12A
VGS = -2 V
-8A
-4A
0A
0V -2V -4V -6V -8V -10V
I(V3)
V_V2
Evaluation circuit
V3
0Vdc
U1
TPC8117
V2
-0.5
V1
-4
0
All Rights Reserved Copyright (c) Bee Technologies Inc. 2007

11. Output Characteristic Reference
All Rights Reserved Copyright (c) Bee Technologies Inc. 2007

12. BODY DIODE SPICE MODEL
Forward Current Characteristic
Circuit Simulation Result
100A
10A
1.0A
100mA
0V 0.2V 0.4V 0.6V 0.8V 1.0V 1.2V
I(VD_Sense)
V_VDS
Evaluation Circuit
VD_Sense
0Vdc
U1
TPC8117
VDS
10Vdc
0
All Rights Reserved Copyright (c) Bee Technologies Inc. 2007

13. Comparison Graph
Circuit Simulation Result
100.00
Measurement
Simulation
Drain reverse current IDR(A)
10.00
1.00
0.10
0 0.2 0.4 0.6 0.8 1 1.2
Drain - Source voltage VDS(V)
Simulation Result
VDS(V) VDS(V)
IDR(A) %Error
Measurement Simulation
0.100 0.570 0.572 0.351
0.200 0.595 0.595 0.000
0.500 0.625 0.624 -0.160
1.000 0.650 0.647 -0.462
2.000 0.670 0.671 0.149
5.000 0.710 0.711 0.141
10.000 0.745 0.749 0.537
20.000 0.785 0.807 2.803
All Rights Reserved Copyright (c) Bee Technologies Inc. 2007

14. Reverse Recovery Characteristic
Circuit Simulation Result
400mA
300mA
200mA
100mA
-0mA
-100mA
-200mA
-300mA
-400mA
0.4us 0.8us 1.2us 1.6us 2.0us 2.4us
I(R1)
Time
Evaluation Circuit
R1
50
V1 = -9.5v V1
V2 = 10.6v
TD = 100n U1
TR = 1ns TPC8117
TF = 10ns
PW = 1us
PER = 100us
0
Compare Measurement vs. Simulation
Measurement Simulation Error (%)
Trj(ns) 28.000 27.982 -0.064
All Rights Reserved Copyright (c) Bee Technologies Inc. 2007

15. Reverse Recovery Characteristic Reference
Trj= 28 (ns)
Trb= 264 (ns)
Conditions:Ifwd=lrev=0.2(A),Rl=50
Example
Relation between trj and trb
All Rights Reserved Copyright (c) Bee Technologies Inc. 2007