The document outlines a device modeling report for the Toshiba power MOSFET model 2SK2508, detailing various electrical parameters and simulation results. It includes graphs and comparison tables for characteristics such as transconductance, gate charge, capacitance, switching time, and reverse recovery. All data is accompanied by measurement versus simulation results and associated errors, emphasizing the accuracy of the models used.

1. Device Modeling Report
COMPONENTS: Power MOSFET (Model Parameters)
PART NUMBER: 2SK2508
MANUFACTURER: TOSHIBA
Body Diode (Model Parameters) / ESD Protection Diode
Bee Technologies Inc.
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006

2. MOSFET MODEL
PSpice model
Model description
parameter
LEVEL
L Channel Length
W Channel Width
KP Transconductance
RS Source Ohmic Resistance
RD Ohmic Drain Resistance
VTO Zero-bias Threshold Voltage
RDS Drain-Source Shunt Resistance
TOX Gate Oxide Thickness
CGSO Zero-bias Gate-Source Capacitance
CGDO Zero-bias Gate-Drain Capacitance
CBD Zero-bias Bulk-Drain Junction Capacitance
MJ Bulk Junction Grading Coefficient
PB Bulk Junction Potential
FC Bulk Junction Forward-bias Capacitance Coefficient
RG Gate Ohmic Resistance
IS Bulk Junction Saturation Current
N Bulk Junction Emission Coefficient
RB Bulk Series Resistance
PHI Surface Inversion Potential
GAMMA Body-effect Parameter
DELTA Width effect on Threshold Voltage
ETA Static Feedback on Threshold Voltage
THETA Mobility Modulation
KAPPA Saturation Field Factor
VMAX Maximum Drift Velocity of Carriers
XJ Metallurgical Junction Depth
UO Surface Mobility
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006

3. Transconductance Characteristic
Circuit Simulation Result
20
18
16
14
12
gfs
10
8
6
4
2 Measurement
Simulation
0
0 1 2 3 4 5 6 7 8 9 10
ID - Drain Current - A
Comparison table
gfs
Id(A) Error(%)
Measurement Simulation
0.1 1.650 1.667 1.030
0.2 2.500 2.500 0.000
0.5 4.100 4.167 1.634
1 5.500 5.500 0.000
2 7.700 7.692 -0.104
5 12.000 11.905 -0.792
10 16.300 16.393 0.571
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006

4. Vgs-Id Characteristic
Circuit Simulation result
20A
16A
12A
8A
4A
0A
0V 2V 4V 6V 8V 10V
I(V3)
V_V2
Evaluation circuit
V3
0Vdc
Vv ariable
0Vdc U32
2SK2508 10Vdc
V2
0
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006

5. Comparison Graph
Circuit Simulation Result
10.00
Measurement
9.00 Simulation
8.00
7.00
ID - Drain Current - A
6.00
5.00
4.00
3.00
2.00
1.00
0.00
0 1 2 3 4 5 6 7 8 9 10
VGS - Gate to Source Voltage - V
Simulation Result
VGS(V)
ID(A) Error (%)
Measurement Simulation
0.1 3.100 3.174 2.387
0.2 3.200 3.219 0.594
0.5 3.300 3.310 0.303
1 3.400 3.412 0.353
2 3.500 3.563 1.800
5 3.800 3.873 1.921
10 4.200 4.233 0.786
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006

6. Rds(on) Characteristic
Circuit Simulation result
7.0A
6.0A
5.0A
4.0A
3.0A
2.0A
1.0A
0A
0V 0.5V 1.0V 1.5V 2.0V
I(V3)
V_VDS
Evaluation circuit
V3
0Vdc
VDS
U32
10Vdc
2SK2508 0Vdc
VGS
0
Simulation Result
ID=6.5A, VGS=10V Measurement Simulation Error (%)
R DS (on) 0.180  0.180  0
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006

7. Gate Charge Characteristic
Circuit Simulation result
20V
16V
12V
8V
4V
0V
0 20n 40n 60n 80n 100n
V(W1:3)
Time*1mS
Evaluation circuit
V2
0Vdc
Dbreak
PER = 1000u
PW = 600u W1 U32
TF = 10n +
TR = 10n 2SK2508 D1 I2
TD = 0
- 13Adc
I2 = 1m W
I1 IOFF = 1mA
I1 = 0 ION = 0uA
V1
200Vdc
0
Simulation Result
VDD=200V,ID=13A
Measurement Simulation Error (%)
,VGS=10V
Qgs(nC) 7.000 6.990 -0.143
Qgd(nC) 15.000 15.044 0.293
Qg 44.000 33.031 -24.930
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006

8. Capacitance Characteristic
Measurement
Simulation
Simulation Result
Cbd(pF)
VDS(V) Error(%)
Measurement Simulation
0.1 1300 1294 -0.462
0.2 1250 1250 0.000
0.5 1150 1148 -0.174
1 1000 1000 0.000
2 810 811 0.123
5 520 520 0.000
10 330 331 0.303
20 206 205 -0.485
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006

9. Switching Time Characteristic
Circuit Simulation result
14V
12V
10V
8V
6V
4V
2V
0V
0.91us 1.00us 1.20us 1.31us
V(L2:1)/13 V(L1:2)
Time
Evaluation circuit
L2 R2
50nH
20
R1 L1
U35
30nH
V1 = 0 4.7 V1
V2 = 20 V2 2SK2508 130Vdc
TD = 1u R3
TR = 1n
TF = 1n 4.7
PW = 10u
PER = 200u
0
Simulation Result
ID=6.5A, VDD=130V
Measurement Simulation Error(%)
VGS=0/10V
Ton(ns) 25.000 25.035 0.140
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006

10. Output Characteristic
Circuit Simulation result
20A
10
6
4.6
8
16A
4.4
12A
4.2
8A 4
VGS=3.8V
4A
0A
0V 4V 8V 12V 16V 20V
I(Vdsense)
V_Vvariable
Evaluation circuit
Vdsense
0Vdc
U35 Vv ariable
10Vdc
2SK2508
10Vdc
Vstep
0
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006

11. Forward Current Characteristic
Circuit Simulation Result
30A
10A
1.0A
500mA
0V 0.2V 0.4V 0.6V 0.8V 1.0V 1.2V
I(R1)
V_V1
Evaluation Circuit
R1
0.01m
2SK2508
V1 U31
0Vdc
0
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006

12. Comparison Graph
Circuit Simulation Result
Measurement
18.50 Simulation
16.50
14.50
Drain reverse current IDR(A)
12.50
10.50
8.50
6.50
4.50
2.50
0.50
0 0.2 0.4 0.6 0.8 1 1.2
Source-Drain voltage VSD(V)
Simulation Result
VSD(V)
IDR(A) Measuremen Simulation %Error
0.5 0.710 0.712 0.282
1 0.740 0.734 -0.811
2 0.760 0.763 0.395
5 0.820 0.820 0.000
10 0.890 0.889 -0.112
20 1.000 1.000 0.000
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006

13. Reverse Recovery Characteristic
Circuit Simulation Result
400mA
300mA
200mA
100mA
-0mA
-100mA
-200mA
-300mA
-400mA
7.6us 8.0us 8.4us 8.8us 9.2us 9.6us 10.4us 11.2us
I(R1)
Time
Evaluation Circuit
R1
50
2SK2508
V1 = -9.4v V1
V2 = 10.65v U40
TD = 1.7u
TR = 10ns
TF = 13ns
PW = 7us
PER = 100us
0
Compare Measurement vs. Simulation
Measurement Simulation Error (%)
Trr(ns) 881.000 882.432 0.163
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006

14. Reverse Recovery Characteristic Reference
Trj= 535(ns)
Trb=346(ns)
Conditions:Ifwd=lrev=0.2(A),Rl=50
Example
Relation between trj and trb
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006

15. Zener Voltage Characteristic
Circuit Simulation Result
10mA
9mA
8mA
7mA
6mA
5mA
4mA
3mA
2mA
1mA
0A
0V 5V 10V 15V 20V 25V 30V 35V 40V 45V 50V
I(R1)
V_V1
Evaluation Circuit
R1
0.01m
V1
0Vdc
R2 U33
2SK2508
100MEG
0
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006

16. Zener Voltage Characteristic Reference
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006