This document summarizes the key parameters and simulation results of a power MOSFET transistor and its internal body diode. It includes tables of parameters for the MOSFET and diode models, graphs comparing simulated and measured output characteristics like forward current and switching times, and evaluation circuits used in the simulations. The models aim to accurately represent the electrical behavior of the real components for circuit design and analysis.

1. Device Modeling Report
COMPONENTS: Power MOSFET (Standard)
PART NUMBER: 2SK3644-01
MANUFACTURER: Fuji Electric
REMARK: Body Diode (Standard)
Bee Technologies Inc.
All Rights Reserved Copyright (c) Bee Technologies Inc. 2005

2. POWER MOSFET MODEL
Pspice model
Model description
parameter
LEVEL
L Channel Length
W Channel Width
KP Transconductance
RS Source Ohmic Resistance
RD Ohmic Drain Resistance
VTO Zero-bias Threshold Voltage
RDS Drain-Source Shunt Resistance
TOX Gate Oxide Thickness
CGSO Zero-bias Gate-Source Capacitance
CGDO Zero-bias Gate-Drain Capacitance
CBD Zero-bias Bulk-Drain Junction Capacitance
MJ Bulk Junction Grading Coefficient
PB Bulk Junction Potential
FC Bulk Junction Forward-bias Capacitance Coefficient
RG Gate Ohmic Resistance
IS Bulk Junction Saturation Current
N Bulk Junction Emission Coefficient
RB Bulk Series Resistance
PHI Surface Inversion Potential
GAMMA Body-effect Parameter
DELTA Width effect on Threshold Voltage
ETA Static Feedback on Threshold Voltage
THETA Modility Modulation
KAPPA Saturation Field Factor
VMAX Maximum Drift Velocity of Carriers
XJ Metallurgical Junction Depth
UO Surface Mobility
All Rights Reserved Copyright (c) Bee Technologies Inc. 2005

3. Body Diode Model
Pspice model
Model description
parameter
IS Saturation Current
N Emission Coefficient
RS Series Resistance
IKF High-injection Knee Current
CJO Zero-bias Junction Capacitance
M Junction Grading Coefficient
VJ Junction Potential
ISR Recombination Current Saturation Value
BV Reverse Breakdown Voltage(a positive value)
IBV Reverse Breakdown Current(a positive value)
TT Transit Time
All Rights Reserved Copyright (c) Bee Technologies Inc. 2005

4. Transconductance Characteristic
Circuit Simulation Result
Comparison table
VGS(V)
ID(A) Error (%)
Measurement Simulation
1.000 5.000 4.965 -0.700
2.000 7.000 6.775 -3.214
5.000 10.500 10.470 -0.286
10.000 14.300 14.180 -0.839
20.000 19.000 18.940 -0.316
All Rights Reserved Copyright (c) Bee Technologies Inc. 2005

5. Vgs-Id Characteristic
Circuit Simulation result
100A
10A
1.0A
500mA
0V 5V 10V
I(V2)
V_V1
Evaluation circuit
V2
0V dc
V3
V1
10 Vd c 25 Vd c
0
All Rights Reserved Copyright (c) Bee Technologies Inc. 2005

6. Comparison Graph
Circuit Simulation Result
Simulation Result
VGS(V)
ID(A) Error (%)
Measurement Simulation
1.000 5.350 5.350 -0.002
2.000 5.550 5.519 -0.568
5.000 5.900 5.863 -0.627
10.000 6.300 6.269 -0.494
All Rights Reserved Copyright (c) Bee Technologies Inc. 2005

7. Id-Rds(on) Characteristic
Circuit Simulation result
15A
10A
5A
0A
0V 1.0V 2.0V
I(V2)
V_V3
Evaluation circuit
V2
0Vdc
V3
V1
10Vdc 25Vdc
0
Simulation Result
ID=15, VGS=10V Measurement Simulation Error (%)
R DS (on) 34.000 m 34.067 m 0.197
All Rights Reserved Copyright (c) Bee Technologies Inc. 2005

8. Gate Charge Characteristic
Circuit Simulation result
14V
12V
10V
8V
6V
4V
2V
0V
0 10n 20n 30n 40n 50n
V(W1:3)
Time*10ms
Evaluation circuit
V2
0Vdc
Dbreak
PER = 1000u D1
PW = 600u I2
TF = 10n W1 30Adc
TR = 10n +
TD = 0
I2 = 10m
-
I1 W
I1 = 0 IOFF = 1mA V1
ION = 0uA 50Vdc
0
Simulation Result
VDD=50V Measurement Simulation Error (%)
,ID=30A
Qgs 13.000 nC 12.975 nC 0.192
Qgd 9.000 nC 8.926 nC 0.827
All Rights Reserved Copyright (c) Bee Technologies Inc. 2005

9. Capacitance Characteristic (Vds vs. Cbd)
Measurement
Simulation
Simulation Result
Cbd(pF)
VDS(V) Error(%)
Measurement Simulation
1.000 1.750 1.759 0.514
2.000 1.430 1.429 -0.070
5.000 1.000 1.013 1.250
10.000 0.770 0.750 -2.597
20.000 0.580 0.550 -5.172
50.000 0.350 0.352 0.571
All Rights Reserved Copyright (c) Bee Technologies Inc. 2005

10. Switching Time Characteristic
Circuit Simulation result
12.0V
VDS =48 (V)
VGS = 10V
8.0V
4.0V
0V
5.000us 5.050us 5.100us
V(2) V(3)/4.8
Time
Evaluation circuit
L1 RL
3
V3 0.05uH 3.175
0Vdc
VDD
48
L2 RG
2
0.03uH
10
V1 = 0 0
V1
V2 = 10
TD = 5u
TR = 6n
TF = 7n
PW = 10u
PER = 100u
0
0
Simulation Result
ID=15A, VDD=48V
Measurement Simulation Error(%)
VGS=0/10V
td (on) 16.000 ns 16.063 ns 0.394
All Rights Reserved Copyright (c) Bee Technologies Inc. 2005

11. Output Characteristic
Circuit Simulation result
10A
6.5V
6.0V
5A
VGS=5.5V
0A
0V 25V 50V
I(V2)
V_V3
Evaluation circuit
V2
0V dc
V3
V1
25 Vd c
10 .0Vd c
0
All Rights Reserved Copyright (c) Bee Technologies Inc. 2005

12. Output Characteristic Reference
6.5V
6.0V
VGS=5.5V
All Rights Reserved Copyright (c) Bee Technologies Inc. 2005

13. Forward Current Characteristic of Reverse Diode
Circuit Simulation Result
40A
10A
1.0A
100mA
0V 1.0V 2.0V
I(V2)
V_V3
Evaluation Circuit
R1
0.0 1m
V2
0V dc
V3
0V dc
0
All Rights Reserved Copyright (c) Bee Technologies Inc. 2005

14. Comparison Graph
Circuit Simulation Result
Simulation Result
Vfwd(V) Vfwd(V)
Ifwd(A) %Error
Measurement Simulation
0.100 0.620 0.621 0.081
0.200 0.648 0.647 -0.154
0.500 0.678 0.676 -0.295
1.000 0.702 0.699 -0.499
2.000 0.724 0.721 -0.483
5.000 0.746 0.750 0.536
10.000 0.770 0.772 0.260
All Rights Reserved Copyright (c) Bee Technologies Inc. 2005

15. Reverse Recovery Characteristic
Circuit Simulation Result
400mA
0A
-400mA
4.4us 4.8us 5.2us 5.6us 6.0us 6.4us
I(R1)
Time
Evaluation Circuit
R1
50
U9
2SK3644-01S
V1 = {-9.4} V1
V2 = {10.7}
TD = 100n
TR = 10n
TF = 10n
PW = 5u
PER = 50u
0
0
Compare Measurement vs. Simulation
Measurement Simulation Error (%)
trr=trj+trb 284.000 ns 284.527 ns 0.186
All Rights Reserved Copyright (c) Bee Technologies Inc. 2005

16. Reverse Recovery Characteristic Reference
Trj=142(ns)
Trb=142(ns)
Conditions:Ifwd=lrev=0.2(A),Rl=50
Example
Relation between trj and trb
All Rights Reserved Copyright (c) Bee Technologies Inc. 2005