SPICE MODEL of TPC6103 (Standard+BDS) in SPICE PARK. English Version is http://www.spicepark.net. Japanese Version is http://www.spicepark.com by Bee Technologies.

1. Device Modeling Report
COMPONENTS: Power MOSFET (Model Parameter)
PART NUMBER: TPC6103
MANUFACTURER: TOSHIBA
REMARK: P Channel Model
Body Diode (Parameter) / ESD Protection Diode
Bee Technologies Inc.
All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
1

2. Circuit Configuration
U1
TPC6103
MOSFET MODEL
PSpice model
Model description
parameter
LEVEL
L Channel Length
W Channel Width
KP Transconductance
RS Source Ohmic Resistance
RD Ohmic Drain Resistance
VTO Zero-bias Threshold Voltage
RDS Drain-Source Shunt Resistance
TOX Gate Oxide Thickness
CGSO Zero-bias Gate-Source Capacitance
CGDO Zero-bias Gate-Drain Capacitance
CBD Zero-bias Bulk-Drain Junction Capacitance
MJ Bulk Junction Grading Coefficient
PB Bulk Junction Potential
FC Bulk Junction Forward-bias Capacitance Coefficient
RG Gate Ohmic Resistance
IS Bulk Junction Saturation Current
N Bulk Junction Emission Coefficient
RB Bulk Series Resistance
PHI Surface Inversion Potential
GAMMA Body-effect Parameter
DELTA Width effect on Threshold Voltage
ETA Static Feedback on Threshold Voltage
THETA Modility Modulation
KAPPA Saturation Field Factor
VMAX Maximum Drift Velocity of Carriers
XJ Metallurgical Junction Depth
UO Surface Mobility
All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
2

3. Transconductance Characteristic
Circuit Simulation Result
12
10
8
gfs
6
4
Measurement
Simulation
2
0 0.5 1 1.5 2
- ID - Drain Current - A
Comparison table
gfs
-Id(A) Error(%)
Measurement Simulation
0.1 2.485 2.500 0.604
0.2 3.500 3.571 2.029
0.5 5.450 5.495 0.826
1 7.443 7.519 1.021
2 10.111 10.363 2.492
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3

4. Vgs-Id Characteristic
Circuit Simulation result
-10A
-8A
-6A
-4A
-2A
0A
0V -0.5V -1.0V -1.5V -2.0V -2.5V
I(V3)
V_V1
Evaluation circuit
V3
0V dc
U1
V2
-10
TP C61 03
V1
-10
0
All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
4

5. Comparison Graph
Circuit Simulation Result
10
Measurement
Simulation
8
- ID - Drain Current - A
6
4
2
0
0 0.5 1 1.5 2 2.5
- VGS - Gate to Source Voltage - V
Simulation Result
-VGS(V)
-ID(A) Error (%)
Measurement Simulation
0.5 1.154 1.211 4.939
1 1.240 1.289 3.952
2 1.350 1.403 3.926
5 1.570 1.640 4.459
10 1.875 1.923 2.560
All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
5

6. Rds(on) Characteristic
Circuit Simulation result
-3.0A
-2.0A
-1.0A
0A
0V -20mV -40mV -60mV -80mV -100mV
I(V2)
V_V3
Evaluation circuit
V2
0V dc
U1
V3
TP C61 03 0V dc
V1
-4.5
0
Simulation Result
ID=-2.8A, VGS=-4.5V Measurement Simulation Error (%)
R DS (on) 29.000 m 29.000 m 0.00
All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
6

7. Gate Charge Characteristic
Circuit Simulation result
-10V
-8V
-6V
-4V
-2V
0V
0 8n 16n 24n 32n 40n
V(W1:4)
Time*1mA
Evaluation circuit
U1
W
-
+ I2
D1
W1 TP C61 03 Db re ak -5.5
IOFF = 1mA
ION = 0
I1 TD = 0 RO FF = 1 e6
TF = 1n RO N = 1.0
PW = 6 00u V1
PE R = 15 00u
I1 = 0
I2 = 1m -10
TR = 1 n
0
Simulation Result
VDD=-10V,ID=-5.5A
Measurement Simulation Error (%)
,VGS=-5V
Qgs(nC) 4.800 4.807 0.146
Qgd(nC) 5.200 5.263 1.212
Qg(nC) 20.500 20.323 -0.863
All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
7

8. Capacitance Characteristic
Measurement
Simulation
Simulation Result
Cbd(pF)
VDS(V) Error(%)
Measurement Simulation
0.1 250.000 250.300 0.120
0.2 210.000 210.300 0.143
0.5 160.000 160.500 0.313
1 130.000 129.990 -0.008
2 102.000 102.500 0.490
5 75.000 75.700 0.933
10 60.000 59.200 -1.333
All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
8

9. Switching Time Characteristic
Circuit Simulation result
-6.0V
-4.0V
-2.0V
0V
1.90us 1.95us 2.00us 2.05us 2.10us 2.15us
V(L1:1)/1.2 V(U1:3)
Time
Evaluation circuit
L1 R3
50 nH
2.1
U1
R1 L2
-6 V1
30 nH
4.7 TP C61 03
V1 = 0 V2
V2 = -1 0 R2
TD = 2 u
TR = 1 0n 4.7
TF = 10n
PW = 1 0u
PE R = 50 u
0
Simulation Result
ID=-2.8A, VDD=-6V
Measurement Simulation Error(%)
VGS=-5V
ton(ns) 16.000 16.000 0.00
All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
9

10. Output Characteristic
Circuit Simulation result
-10A
-2V
-2.5V
-3V
-1.9V
-8A
-4V
-5V
-1.8V
-6A
-1.7V
-4A
-1.6V
-2A
VGS= -1.4V
0A
0V -1.0V -2.0V -3.0V -4.0V -5.0V
I(V3)
V_V2
Evaluation circuit
V3
0V dc
U1
V2
TP C61 03 -10 V
V1
0
0
All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
10

11. BODY DIODE SPICE MODEL
Forward Current Characteristic
Circuit Simulation Result
-100A
3
-1.0A
0V 0.4V 0.8V 1.2V 1.6V 2.0V
-I(R1)
V_V1
Evaluation Circuit
R1
0.0 1m
U1
V1
0V dc
TP C61 03
0
All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
11

12. Comparison Graph
Circuit Simulation Result
100
Measurement
Simulation
- Drain reverse current IDR(A)
10
1
0 0.4 0.8 1.2 1.6 2
- Drain Source voltage VDS(V)
Simulation Result
VDS(V) VDS(V)
-IDR(A) %Error
Measurement Simulation
1.000 0.660 0.670 1.515
2.000 0.730 0.726 -0.616
5.000 0.820 0.817 -0.366
10.000 0.920 0.915 -0.598
20.000 1.060 1.063 0.283
All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
12

13. Reverse Recovery Characteristic
Circuit Simulation Result
400mA
200mA
0A
-200mA
-400mA
19.92us 20.00us 20.08us 20.16us 20.24us 20.32us
I(RL)
Time
Evaluation Circuit
RL
50
U1
V1 = -9 .4 5 V1
V2 = 10.5
TD = 2 5n TP C61 03
TR = 1 0n
TF = 10n
PW = 2 0u
PE R = 10 0u
0
Compare Measurement vs. Simulation
Measurement Simulation Error (%)
trj(ns) 20.000 20.023 0.115
All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
13

14. Reverse Recovery Characteristic Reference
Trj=20(ns)
Trb=60.8(ns)
Conditions:Ifwd=lrev=0.2(A),Rl=50
Example
Relation between trj and trb
All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
14

15. ESD PROTECTION DIODE SPICE MODEL
Zener Voltage Characteristic
Circuit Simulation Result
10mA
5mA
0A
0V 10V 20V 30V 40V 50V
I(R1)
V_V1
Evaluation Circuit
U1
R1
R2
0.0 1m 1G
TP C61 03
V1
0V dc
0
All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
15

16. Zener Voltage Characteristic Reference
All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
16