SPICE MODEL of 2SJ651 (Professional+BDP Model) in SPICE PARK. English Version is http://www.spicepark.net. Japanese Version is http://www.spicepark.com by Bee Technologies.

1. Device Modeling Report
COMPONENTS: Power MOSFET (Professional Model)
PART NUMBER: 2SJ651
MANUFACTURER: SANYO
Body Diode (Professional Model) / ESD Protection Diode
Bee Technologies Inc.
All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
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2. MOSFET MODEL
PSpice model
Model description
parameter
LEVEL
L Channel Length
W Channel Width
KP Transconductance
RS Source Ohmic Resistance
RD Ohmic Drain Resistance
VTO Zero-bias Threshold Voltage
RDS Drain-Source Shunt Resistance
TOX Gate Oxide Thickness
CGSO Zero-bias Gate-Source Capacitance
CGDO Zero-bias Gate-Drain Capacitance
CBD Zero-bias Bulk-Drain Junction Capacitance
MJ Bulk Junction Grading Coefficient
PB Bulk Junction Potential
FC Bulk Junction Forward-bias Capacitance Coefficient
RG Gate Ohmic Resistance
IS Bulk Junction Saturation Current
N Bulk Junction Emission Coefficient
RB Bulk Series Resistance
PHI Surface Inversion Potential
GAMMA Body-effect Parameter
DELTA Width effect on Threshold Voltage
ETA Static Feedback on Threshold Voltage
THETA Mobility Modulation
KAPPA Saturation Field Factor
VMAX Maximum Drift Velocity of Carriers
XJ Metallurgical Junction Depth
UO Surface Mobility
All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
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3. Transconductance Characteristic
Circuit Simulation Result
Comparison table
gfs(S)
-Id(A) Error (%)
Measurement Simulation
1 6.250 6.485 3.76
2 8.750 8.932 2.08
5 13.250 13.423 1.31
10 17.750 17.984 1.32
20 23.400 23.670 1.15
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4. Vgs-Id Characteristic
Circuit Simulation result
-40A
-35A
-30A
-25A
-20A
-15A
-10A
-5A
0A
0V -1.0V -2.0V -3.0V -4.0V -5.0V
I(V3)
V_V1
Evaluation circuit
V3
0Vdc
U1 V2
2SJ651
V1 -10
0Vdc
0
All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
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5. Comparison Graph
Circuit Simulation Result
Simulation Result
-VGS(V)
-ID(mA) Error (%)
Measurement Simulation
1 2.430 2.415 -0.62
2 2.570 2.545 -0.97
5 2.840 2.812 -0.99
10 3.170 3.129 -1.29
20 3.675 3.607 -1.85
30 4.075 3.997 -1.91
40 4.450 4.341 -2.45
All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
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6. Rds(on) Characteristic
Circuit Simulation result
-10A
-9A
-8A
-7A
-6A
-5A
-4A
-3A
-2A
-1A
0A
0V -50mV -150mV -250mV -350mV -450mV
I(V3)
V_VDS
Evaluation circuit
V3
0Vdc
VDS
U1
2SJ651 0Vdc
V1
-10
0
Simulation Result
ID= -10A, VGS= -10V Measurement Simulation Error (%)
R DS (on) mΩ 45.000 45.000 0.00
All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
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7. Gate Charge Characteristic
Circuit Simulation result
-10V
-9V
-8V
-7V
-6V
-5V
-4V
-3V
-2V
-1V
0V
0 5n 10n 15n 20n 25n 30n 35n 40n 45n
V(W1:4)
Time*1mA
Evaluation circuit
U1
ION = 0uA 2SJ651 I2
I1 = 0 IOFF = 1mA D2 20
I2 = 1m W Dbreak
TD = 0 I1 -
TR = 5n +
TF = 5n VDD
PW = 600u W1
PER = 1000u
-30
0
Simulation Result
VDD= -30V,ID= -20A
Measurement Simulation Error (%)
,VGS= -10V
Qgs nC 7.400 7.412 0.16
Qgd nC 9.000 9.087 0.97
Qg nC 45.000 44.804 -0.44
All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
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8. Capacitance Characteristic
Measurement
Simulation
Simulation Result
Cbd(pF)
VSD(V) Error(%)
Measurement Simulation
1.0 230.000 230.000 0.00
2.0 183.000 182.700 -0.16
5.0 120.000 121.000 0.83
10.0 83.000 82.500 -0.60
15.0 65.000 65.600 0.92
20.0 55.000 54.750 -0.45
25.0 47.000 47.400 0.85
30.0 42.000 42.400 0.95
All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
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9. Switching Time Characteristic
Circuit Simulation result
-14V
-12V
-10V
-8V
-6V
-4V
-2V
0V
0.6us 0.7us 0.8us 0.9us 1.0us 1.1us 1.2us 1.3us
V(U1:G) V(U1:D)/3
Time
Evaluation circuit
L2 RL
50nH 3
R1 L1
U1 VDD
PER = 20u 2SJ651 -30.5Vdc
PW = 10u 30nH
TF = 5n 50 R2
TR = 5n 50
TD = 1u
V2 = 20 V2
V1 = 0
0
Simulation Result
ID= -10A, VDD= -30V
Measurement Simulation Error(%)
VGS=0/-10V
td(on) ns 18.000 18.061 0.34
All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
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10. Output Characteristic
Circuit Simulation result
-50A
-45A
-10
-8 -6
-40A
-35A
-4
-30A
-25A
-20A
-15A
-10A
VGS=-3V
-5A
0A
0V -0.5V -1.5V -2.5V -3.5V -4.5V
I(V3)
V_V2
Evaluation circuit
V3
0Vdc
U1 V2
2SJ651
V1 -5
0
0
All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
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11. BODY DIODE SPICE MODEL
Forward Current Characteristic
Circuit Simulation Result
100A
10A
1.0A
100mA
0V 0.3V 0.6V 0.9V 1.2V 1.5V
I(Vsense)
V_VSD
Evaluation Circuit
Vsense
0Vdc
VSD
U1
2SJ651
0
All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
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12. Comparison Graph
Circuit Simulation Result
Simulation Result
VSD (-V)
IDR(-A) %Error
Measurement Simulation
0.01 0.575 0.576 0.17
0.02 0.598 0.597 -0.17
0.05 0.625 0.626 0.10
0.10 0.648 0.647 -0.15
0.20 0.671 0.669 -0.30
0.50 0.700 0.699 -0.14
1.00 0.723 0.724 0.14
2.00 0.750 0.752 0.27
5.00 0.805 0.803 -0.25
10.00 0.860 0.860 0.05
20.00 0.950 0.949 -0.11
All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
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13. Reverse Recovery Characteristic
Circuit Simulation Result
400mA
300mA
200mA
100mA
-0mA
-100mA
-200mA
-300mA
-400mA
0.6us 0.8us 1.0us 1.2us 1.4us 1.6us
I(R1)
Time
Evaluation Circuit
R1
50
V1 = -9.4v
V2 = 10.6v V1 U1
TD = 20ns D2SJ651_P
TR = 10ns
TF = 10ns
PW = 1us
PER = 100us
0
Compare Measurement vs. Simulation
Measurement Simulation Error (%)
trj ns 26.000 26.258 0.99
trb ns 44.000 43.938 -0.14
trr ns 70.000 70.196 0.28
All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
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14. Reverse Recovery Characteristic Reference
Measurement
Trj= 26.00 (ns)
Trb= 44.00 (ns)
Conditions:Ifwd=lrev=0.2(A),Rl=50
Example
Relation between trj and trb
All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
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15. ESD PROTECTION DIODE SPICE MODEL
Zener Voltage Characteristic
Circuit Simulation Result
-10mA
-8mA
-6mA
-4mA
-2mA
0A
0V -10V -20V -30V -40V -50V
I(R1)
V_V1
Evaluation Circuit
R1
0.001m
V1
0Vdc U1
2SJ651
R2
100MEG
0
All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
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16. Zener Voltage Characteristic Reference
All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
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