SPICE MODEL of 2SK3799 (Standard+BDS Model) in SPICE PARK
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SPICE MODEL of 2SK3799 (Standard+BDS) in SPICE PARK. English Version is http://www.spicepark.net. Japanese Version is http://www.spicepark.com by Bee Technologies.
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SPICE MODEL of 2SK3799 (Standard+BDS Model) in SPICE PARK
- 1. Device Modeling Report COMPONENTS: Power MOSFET (Model parameter) PART NUMBER: 2SK3799 MANUFACTURER: TOSHIBA Body Diode (Model parameter) / ESD Protection Diode Bee Technologies Inc. All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
- 2. MOSFET MODEL PSpice model Model description parameter LEVEL L Channel Length W Channel Width KP Transconductance RS Source Ohmic Resistance RD Ohmic Drain Resistance VTO Zero-bias Threshold Voltage RDS Drain-Source Shunt Resistance TOX Gate Oxide Thickness CGSO Zero-bias Gate-Source Capacitance CGDO Zero-bias Gate-Drain Capacitance CBD Zero-bias Bulk-Drain Junction Capacitance MJ Bulk Junction Grading Coefficient PB Bulk Junction Potential FC Bulk Junction Forward-bias Capacitance Coefficient RG Gate Ohmic Resistance IS Bulk Junction Saturation Current N Bulk Junction Emission Coefficient RB Bulk Series Resistance PHI Surface Inversion Potential GAMMA Body-effect Parameter DELTA Width effect on Threshold Voltage ETA Static Feedback on Threshold Voltage THETA Mobility Modulation KAPPA Saturation Field Factor VMAX Maximum Drift Velocity of Carriers XJ Metallurgical Junction Depth UO Surface Mobility All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
- 3. Transconductance Characteristic Circuit Simulation Result 10 8 6 gfs 4 2 Measurement Simulation 0 0.5 2.5 4.5 6.5 8.5 ID(A) Comparison table gfs Id(A) Error (%) Measurement Simulation 0.5 2.5 2.463 -1.480 1 3.333 3.448 3.450 2 4.762 4.808 0.966 5 7.246 7.386 1.932 10 8.989 9.164 1.947 All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
- 4. Vgs-Id Characteristic Circuit Simulation result 20A 16A 12A 8A 4A 0A 0V 2V 4V 6V 8V 10V I(V3) V_V1 Evaluation circuit V3 0Vdc U1 V2 2SK3799 V1 15 6.5 0 All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
- 5. Comparison Graph Circuit Simulation Result Measurement Simulation 8.5 ID - Drain Current - A 6.5 4.5 2.5 0.5 0 2 4 6 8 10 VGS - Gate to Source Voltage - V Simulation Result VGS(V) ID(A) Error (%) Measurement Simulation 0.5 4.1 4.2106 2.698 1 4.35 4.3839 0.779 2 4.65 4.6318 -0.391 5 5.1 5.134 0.667 10 5.5 5.5044 0.080 All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
- 6. Rds(on) Characteristic Circuit Simulation result 4.0A 3.0A 2.0A 1.0A 0A 0V 1.0V 2.0V 3.0V 4.0V 5.0V 6.0V 7.0V I(V2) V_V3 Evaluation circuit V2 0Vdc U1 V3 2SK3799 0Vdc V1 10 0 Simulation Result ID=4A, VGS=10V Measurement Simulation Error (%) R DS (on) 1 1 0 All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
- 7. Gate Charge Characteristic Circuit Simulation result 20V 16V 12V 8V 4V 0V 0s 20ns 40ns 60ns 80ns 100ns V(W1:3) Time*1m Evaluation circuit RON = 1.0 U1 ROFF = 1e6 ION = 0 IOFF = 100u W1 + I2 2SK3799 D1 - Dbreak W 8 I1 I1 = 0 I2 = 1m V1 TD = 0 TR = 10n TF = 10n PW = 200u 400 PER = 500u 0 Simulation Result VDD=400V,ID=8A Measurement Simulation Error (%) Qgs 11 nC 11.107 nC 0.973 Qgd 29 nC 29.195 nC 0.672 Qg 62 nC 52.036 nC -16.071 All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
- 8. Capacitance Characteristic Measurement Simulation Simulation Result Cbd(pF) VDS(V) Error(%) Measurement Simulation 0.1 1100 1095 -0.455 0.2 1080 1078 -0.185 0.5 1030 1032 0.194 1 950 963 1.368 2 850 845 -0.588 5 600 595 -0.833 10 370 375 1.351 20 190 190 0 All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
- 9. Switching Time Characteristic Circuit Simulation result 12.0V 8.0V 4.0V 0V 1.75us 2.00us 2.25us 2.50us V(U1:G) V(U1:D)/40 Time Evaluation circuit L1 R2 50nH 100 U1 L2 V1 V1 = 0 V2 30nH V2 = 10 400 TD = 2u R4 2SK3799 TR = 6n TF = 7n 4.7 PW = 10u PER = 30u 0 Simulation Result ID=4 A, VDD=400V Measurement Simulation Error(%) VGS=0/10V ton 65.000 ns 65.045 ns 0.069 All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
- 10. Output Characteristic Circuit Simulation result 20A 16A 12A 5.5 8A 5 4A VGS=4.5 V 0A 0V 4V 8V 12V 16V 20V I(Vdsense) V_Vvariable Evaluation circuit Vdsense 0Vdc U1 2SK3799 Vv ariable Vstep 20 4.5 0 All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
- 11. BODY DIODE Forward Current Characteristic Circuit Simulation Result 100A 10A 1.0A 100mA 0V 0.4V 0.8V 1.2V 1.6V I(R1) V_V1 Evaluation Circuit R1 0.01m U1 V1 0Vdc 2SK3799 0 All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
- 12. Comparison Graph Circuit Simulation Result 10 Measurement Simulation Drain reverse current IDR(A) 1 0.1 0 0.2 0.4 0.6 0.8 1 1.2 Source-Drain voltage VSD(V) Simulation Result VSD(V) Ifwd(A) Measurement Simulation %Error 0.1 0.6 0.599 -0.167 0.2 0.63 0.63 0 0.5 0.68 0.678 -0.294 1 0.72 0.723 0.417 2 0.78 0.783 0.385 5 0.9 0.895 -0.556 10 1.02 1.022 0.196 All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
- 13. Reverse Recovery Characteristic Circuit Simulation Result 400mA 200mA 0A -200mA -400mA 10us 20us 30us I(RL) Time Evaluation Circuit RL 50 V1 = -9.33 V1 V2 = 10.65 U1 TD = 0 TR = 10n TF = 10n 2SK3799 PW = 15u PER = 100u 0 Compare Measurement vs. Simulation Trr(ns) Measurement Simulation Error (%) Trj+Trb (us) 6.44 6.4475 0.116 All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
- 14. Reverse Recovery Characteristic Reference Trj=3.32(us) Trb=3.12(us) Conditions:Ifwd=lrev=0.2(A),Rl=50 Example Relation between trj and trb All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
- 15. ESD PROTECTION DIODE Zener Voltage Characteristic Circuit Simulation Result 10mA 5mA 0A 0V 50V 100V I(R1) V_V1 Evaluation Circuit U1 R1 0.01m 2SK3799 R2 V1 0Vdc 1G 0 All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
- 16. Zener Voltage Characteristic Reference All Rights Reserved Copyright (c) Bee Technologies Inc. 2006